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At least 235 records · Page 13

Turnkey locking of quantum-dot lasers directly grown on Si

Ultralow-noise laser sources are crucial for a variety of applications, including microwave synthesizers, optical gyroscopes and the manipulation of quantum systems. Silicon photonics has emerged as a promising solution for high-coherence applications due to its ability to reduce the system size, weight, power consumption and cost. Semiconductor lasers based on self-injection locking have achieved fibre laser coherence, but typically require a high-quality-factor external cavity to suppress coherence collapse through frequency-selective feedback. Lasers based on external-cavity locking are a low-cost and turnkey operation option, but their coherence is generally inferior to self-injection locking lasers. In this work, we demonstrate quantum-dot lasers grown directly on Si that achieve self-injection-locking laser coherence under turnkey external-cavity locking. The high-performance quantum-dot laser offers a scalable and low-cost heteroepitaxial integration platform. Moreover, the chaos-free nature of the quantum-dot laser enables a 16 Hz Lorentzian linewidth under external-cavity locking using a low-quality-factor external cavity, and improves the frequency noise by an additional order of magnitude compared with conventional quantum-well lasers.

Dong, Bozhang↗

Vertical organic electrochemical transistors for complementary circuits

Abstract Organic electrochemical transistors (OECTs) and OECT-based circuitry offer great potential in bioelectronics, wearable electronics and artificial neuromorphic electronics because of their exceptionally low driving voltages (<1 V), low power consumption (<1 µW), high transconductances (>10 mS) and biocompatibility 1–5 . However, the successful realization of critical complementary logic OECTs is currently limited by temporal and/or operational instability, slow redox processes and/or switching, incompatibility with high-density monolithic integration and inferior n-type OECT performance 6–8 . Here we demonstrate p- and n-type vertical OECTs with balanced and ultra-high performance by blending redox-active semiconducting polymers with a redox-inactive photocurable and/or photopatternable polymer to form an ion-permeable semiconducting channel, implemented in a simple, scalable vertical architecture that has a dense, impermeable top contact. Footprint current densities exceeding 1 kA cm −2 at less than ±0.7 V, transconductances of 0.2–0.4 S, short transient times of less than 1 ms and ultra-stable switching (>50,000 cycles) are achieved in, to our knowledge, the first vertically stacked complementary vertical OECT logic circuits. This architecture opens many possibilities for fundamental studies of organic semiconductor redox chemistry and physics in nanoscopically confined spaces, without macroscopic electrolyte contact, as well as wearable and implantable device applications.

Science & Technology - Other Topics↗

In-flight positional and energy use data set of a DJI Matrice 100 quadcopter for small package delivery

Abstract We autonomously directed a small quadcopter package delivery Uncrewed Aerial Vehicle (UAV) or “drone” to take off, fly a specified route, and land for a total of 209 flights while varying a set of operational parameters. The vehicle was equipped with onboard sensors, including GPS, IMU, voltage and current sensors, and an ultrasonic anemometer, to collect high-resolution data on the inertial states, wind speed, and power consumption. Operational parameters, such as commanded ground speed, payload, and cruise altitude, were varied for each flight. This large data set has a total flight time of 10 hours and 45 minutes and was collected from April to October of 2019 covering a total distance of approximately 65 kilometers. The data collected were validated by comparing flights with similar operational parameters. We believe these data will be of great interest to the research and industrial communities, who can use the data to improve UAV designs, safety, and energy efficiency, as well as advance the physical understanding of in-flight operations for package delivery drones.

42 ENGINEERING↗

Ferroelectric capacitors and field-effect transistors as in-memory computing elements for machine learning workloads

Abstract This study discusses the feasibility of Ferroelectric Capacitors (FeCaps) and Ferroelectric Field-Effect Transistors (FeFETs) as In-Memory Computing (IMC) elements to accelerate machine learning (ML) workloads. We conducted an exploration of device fabrication and proposed system-algorithm co-design to boost performance. A novel FeCap device, incorporating an interfacial layer (IL) and$$\text {Hf}_{0.5}\text {Zr}_{0.5}\text {O}_2$$ Hf 0.5 Zr 0.5 O 2 (HZO), ensures a reduction in operating voltage and enhances HZO scaling while being compatible with CMOS circuits. The IL also enriches ferroelectricity and retention properties. When integrated into crossbar arrays, FeCaps and FeFETs demonstrate their effectiveness as IMC components, eliminating sneak paths and enabling selector-less operation, leading to notable improvements in energy efficiency and area utilization. However, it is worth noting that limited capacitance ratios in FeCaps introduced errors in multiply-and-accumulate (MAC) computations. The proposed co-design approach helps in mitigating these errors and achieves high accuracy in classifying the CIFAR-10 dataset, elevating it from a baseline of 10% to 81.7%. FeFETs in crossbars, with a higher on-off ratio, outperform FeCaps, and our proposed charge-based sensing scheme achieved at least an order of magnitude reduction in power consumption, compared to prevalent current-based methods.

Science & Technology - Other Topics↗

Fiber optic computing using distributed feedback

Abstract The widespread adoption of machine learning and other matrix intensive computing algorithms has renewed interest in analog optical computing, which has the potential to perform large-scale matrix multiplications with superior energy scaling and lower latency than digital electronics. However, most optical techniques rely on spatial multiplexing, requiring a large number of modulators and detectors, and are typically restricted to performing a single kernel convolution operation per layer. Here, we introduce a fiber-optic computing architecture based on temporal multiplexing and distributed feedback that performs multiple convolutions on the input data in a single layer. Using Rayleigh backscattering in standard single mode fiber, we show that this technique can efficiently apply a series of random nonlinear projections to the input data, facilitating a variety of computing tasks. The approach enables efficient energy scaling with orders of magnitude lower power consumption than GPUs, while maintaining low latency and high data-throughput.

97 MATHEMATICS AND COMPUTING↗

Local structure effects of carbon-doping on the phase change material Ge 2 Sb 2 Te 5

Ge 2 Sb 2 Te 5 is used in phase change memory, a nonvolatile memory technology, due to its phase change properties. The primary advantage of phase change memory over the state-of-the-art (flash memory) is its simple and small device geometry, which allows for denser nodes and lower power consumption. In phase change memory, resistive heating induces fast switching between the high resistance amorphous and low resistance crystalline phases, corresponding to storage of low and high digital states, respectively. However, the instability of the amorphous phase of Ge 2 Sb 2 Te 5 presents issues with processing and long-term data storage; such issues can be resolved by C doping, which stabilizes the amorphous phase and raises the crystallization temperature. To better understand the local structural effects of C doping on Ge 2 Sb 2 Te 5 , in situ Ge K-edge X-ray absorption spectroscopy measurements were taken during heating of films with various C doping concentrations. Here, the range of structural transformation temperatures derived from X-ray absorption near-edge structure analysis across the C doping series proved narrower than crystallization temperatures reported in similar in situ X-ray diffraction experiments, which may reflect changes in local structure that precede long-range ordering during crystallization. In addition, rigorous extended X-ray absorption fine structure fitting across and between temperature series revealed effects of C doping on the rigidity of Ge–Te bonds at low (2 at% and 4 at%) C concentrations.

Langhout, John D.↗

A domain wall-magnetic tunnel junction artificial synapse with notched geometry for accurate and efficient training of deep neural networks

Inspired by the parallelism and efficiency of the brain, several candidates for artificial synapse devices have been developed for neuromorphic computing, yet a nonlinear and asymmetric synaptic response curve precludes their use for backpropagation, the foundation of modern supervised learning. Spintronic devices—which benefit from high endurance, low power consumption, low latency, and CMOS compatibility—are a promising technology for memory, and domain-wall magnetic tunnel junction (DW-MTJ) devices have been shown to implement synaptic functions such as long-term potentiation and spike-timing dependent plasticity. In this work, we propose a notched DW-MTJ synapse as a candidate for supervised learning. Using micromagnetic simulations at room temperature, we show that notched synapses ensure the non-volatility of the synaptic weight and allow for highly linear, symmetric, and reproducible weight updates using either spin transfer torque (STT) or spin–orbit torque (SOT) mechanisms of DW propagation. We use lookup tables constructed from micromagnetics simulations to model the training of neural networks built with DW-MTJ synapses on both the MNIST and Fashion-MNIST image classification tasks. Accounting for thermal noise and realistic process variations, the DW-MTJ devices achieve classification accuracy close to ideal floating-point updates using both STT and SOT devices at room temperature and at 400 K. Our work establishes the basis for a magnetic artificial synapse that can eventually lead to hardware neural networks with fully spintronic matrix operations implementing machine learning.

42 ENGINEERING↗

The ultrafast pixel array camera system and its applications in high energy density physics

Diagnostics in high energy density physics, shock physics, and related fields are primarily driven by a need to record rapidly time-evolving signals in single-shot events. These measurements are often limited by channel count and signal degradation issues on cable links between the detector and digitizer. Here we present the Ultrafast Pixel Array Camera (UPAC), a compact and flexible detector readout system with 32 waveform-recording channels at up to 10 Gsample/s and 1.8 GHz analog bandwidth. The compact footprint allows the UPAC to be directly embedded in the detector environment. A key enabling technology is the PSEC4A chip, an eight-channel switch-capacitor array sampling device with up to 1056 samples/channel. The UPAC system includes a high-density input connector that can plug directly into an application-specific detector board, programmable control, and serial readout, with less than 5 W of power consumption in full operation. We present the UPAC design and characterization, including a measured timing resolution of ~20 ps or better on acquisitions of sub-nanosecond pulses with minimal system calibrations. Example applications of the UPAC are also shown to demonstrate operation of a solid-state streak camera, an ultrafast imaging array, and a neutron time-of-flight spectrometer.

47 OTHER INSTRUMENTATION↗

Harnessing ferro-valleytricity in pentalayer rhombohedral graphene for memory and compute

Two-dimensional materials with multiple degrees of freedom, including spin, valleys, and orbitals, open up an exciting avenue for engineering multifunctional devices. Beyond spintronics, these degrees of freedom can lead to novel quantum effects such as valley-dependent Hall effects and orbital magnetism, which could revolutionize next-generation electronics. However, achieving independent control over valley polarization and orbital magnetism has been a challenge due to the need for large electric fields. A recent breakthrough involving pentalayer rhombohedral graphene has demonstrated the ability to individually manipulate anomalous Hall signals and orbital magnetic hysteresis, forming what is known as a valley-magnetic quartet. Here, we leverage the electrically tunable ferro-valleytricity of pentalayer rhombohedral graphene to develop nonvolatile memory and in-memory computation applications. We propose an architecture for a dense, scalable, and selector-less nonvolatile memory array that harnesses the electrically tunable ferro-valleytricity. In our designed array architecture, nondestructive read and write operations are conducted by sensing the valley state through two different pairs of terminals, allowing for independent optimization of read/write peripheral circuits. The power consumption of our PRG-based array is remarkably low, with only ∼6 nW required per write operation and ∼2.3 nW per read operation per cell. This consumption is orders of magnitude lower than that of the majority of state-of-the-art cryogenic memories. Additionally, we engineer in-memory computation by implementing majority logic operations within our proposed nonvolatile memory array without modifying the peripheral circuitry. In conclusion, our framework presents a promising pathway toward achieving ultra-dense cryogenic memory and in-memory computation capabilities.

2D materials↗

Multistate resistance in TaN/(Hf,Zr)O 2 /Ta ferroelectric tunnel junctions

Ferroelectric tunnel junctions (FTJs) utilizing hafnium zirconium oxide (HZO) have emerged as promising non-volatile memory elements for microelectronics, compatible with back end of line (BEOL) complementary–metal–oxide semiconductor fabrication. This study investigates asymmetric electrode TaN/HZO/Ta devices with a 6 nm thick HZO layer as FTJs for multistate resistive memory applications. The individual FTJs exhibit a resistance ratio exceeding 10× when utilized as a binary state device, with pulsing between −1.7 and +1.4 V to set the high resistance state (HRS) and low resistance state (LRS), respectively. Following with reduced write voltage pulses allows the ferroelectric device to operate with a selection of over 32 distinct resistance states (2 5 bits) between the LRS and HRS. This work then explores the stability of the resistance states during write/read pulse cycling, along with the stability of the state after multiple read pulses. Accessing the multibit state shows stability within 50 reads with the binary state remaining stable for more than 4000 reads pulses. With their multistate tunability and versatility, FTJs hold promise as BEOL memory elements for compute-in-memory (CiM) arrays, binary digital memory, or weighted vector matrix multiplication applications with low power consumption during computations.

CMOS↗

A compact low-level RF control system for advanced concept compact electron linear accelerator

A compact low-level RF (LLRF) control system based on RF system-on-chip (RFSoC) technology has been designed for the Advanced Concept Compact Electron Linear-accelerator (ACCEL) program, which has challenging requirements in both RF performance and size, weight, and power consumption (SWaP). The compact LLRF solution employs the direct RF sampling technique of RFSoC, which samples the RF signals directly without any analog upconversion and downconversion. Compared with the conventional heterodyne based architecture used for the LLRF system of a linear accelerator (LINAC), the elimination of analog mixers can significantly reduce the size and weight of the system, especially with LINAC requiring a larger number of RF channels. Based on the requirements of ACCEL, a prototype LLRF platform has been developed, and the control schemes have been proposed. The prototype LLRF system demonstrated magnitude and phase fluctuation levels below 1% and 1° on the flattop of a 2 μs RF pulse. The LLRF control schemes proposed for ACCEL are implemented with a prototype hardware platform. In conclusion, this paper will introduce the new compact LLRF solution and summarize a selection of experimental test results of the prototype itself and with the accelerating structure cavities designed for ACCEL.

Liu, C. [SLAC National Accelerator Laboratory (SLA↗

Miniature quantum frequency standard based on the phenomenon of coherent population trapping in vapours of {sup 87}Rb atoms

We report the results of the development and production of a quantum frequency standard (QFS) based on the coherent population trapping (CPT) resonance observed on the D{sub 1} absorption line of {sup 87}Rb atoms. The effect of various physical factors on the QFS frequency is studied, and the optimal physical parameters of the device to attain the best frequency stability are determined. The measured relative frequency instability (Allan deviation) is ∼9 × 10{sup −12} for the averaging time of 1 s, 3 ×10{sup −13} for 1000 s, and 1.5 ×10{sup −12} for 24 hours. For a volume of 60 cm{sup 3}, the power consumption of the entire device is 300 mW. The designed QFS can be used in a new-generation satellite navigation systems with increased accuracy and reliability, as well as for solving a number of other problems of science and technology. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Impact of soil model complexity on the long-term thermal performance prediction of a new shallow bore ground heat exchanger

Shallow bore ground heat exchangers have been investigated in recent years because they have the potential to reduce the initial cost of the ground source heat pump system. Correctly modeling the transient heat transfer between the ground heat exchanger and the surrounding soil is essential for predicting a ground heat exchanger's performance. Simplification of the soil model could increase computation speed but sacrifice accuracy. This study investigates the impact of the soil model complexity on the annual performance prediction of a new shallow bore ground heat exchanger, the underground thermal battery (UTB). A simple 1D soil model and a more detailed 2D soil model were implemented, and they were validated against a 3D soil model. Overall, the resulting predictions of the UTB’s response from the 1D and 2D models to a given thermal load in different climates were compared. The results show that the root mean square differences between the hourly temperatures of the UTB during a year predicted using the two soil models range from 1.17°C to 3.39°C. As a result, the difference in the annual power consumption of the heat pump was between 0.7% and 3.4%. Furthermore, the dimensions of the UTB affected its performance, and a longer UTB was less sensitive to the soil models.

42 ENGINEERING↗

Metal Chalcogenides for Neuromorphic Computing: Emerging Materials and Mechanisms

The approaching end of Moore's Law scaling has significantly accelerated multiple fields of research including neuromorphic-, quantum-, and photonic computing, each of which possesses unique benefits unobtained through conventional binary computers. One of the most compelling arguments for neuromorphic computing systems is power consumption, noting that computations made in the human brain are approximately 106 times more efficient than conventional CMOS logic. This review article focuses on the materials science and physical mechanisms found in metal chalcogenides that are currently being explored for use in neuromorphic applications. We begin by reviewing the key biological signal generation and transduction mechanisms within neuronal components of mammalian brains and subsequently compare with observed experimental measurements in chalcogenides. With robustness and energy efficiency in mind, we will focus on short-range mechanisms such as structural phase changes and correlated electron systems that can be driven by low-energy stimuli, such as temperature or electric field. We aim to highlight fundamental materials research and existing gaps that need to be overcome to enable further integration or advancement of metal chalcogenides for neuromorphic systems.

36 MATERIALS SCIENCE↗

Muon radiography applied to volcanoes imaging: the MURAVES experiment at Mt. Vesuvius

Muon radiography is a technique based on the measurement of absorption profiles of muons as they pass through matter. This measurement allows to obtain an image of the inner structure of large volume objects and is suitable to be applied in several fields, such as volcanology, archaeology and civil engeneering. One of the main applications concerns the study of volcanic structures; indeed it is possible to use this technique to measure the mass distribution inside the edifice of a volcano providing useful information to better understand the possible eruption mechanisms. The MURAVES (MUon RAdiography of VESuvius) project aims to the study of the summital cone of Mt. Vesuvius near Naples in Italy, one of the most dangerous active volcanoes in the world. The MURAVES apparatus is a modular, robust muon hodoscope system with a low power consumption, optimized to be used in inhospitable environments like the surroundings of volcanoes. The complete detection system is an array of identical tracking modules, each with an area of 1 m2, based on the use of plasic scintillators. The technologies, the status and the data analysis strategy of the experiment will be presented in this paper.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Characterization of a gigabit transceiver for the ATLAS inner tracker pixel detector readout upgrade

We present a gigabit transceiver prototype Application Specific Integrated Circuit (ASIC), GBCR, for the ATLAS Inner Tracker (ITk) Pixel detector readout upgrade. GBCR is designed in a 65-nm CMOS technology and consists of four upstream receiver channels, a downstream transmitter channel, and an Inter-Integrated Circuit (I2C) slave. The upstream channels receive the data at 5.12 Gbps passing through 5-meter 34-American Wire Gauge (AWG) Twin-axial (Twinax) cables, equalize and retime them with a recovered clock, and then drive an optical transmitter. The downstream channel receives the data at 2.56 Gbps from an optical receiver and drives the cable as same as the upstream channels. The jitter of the upstream channel output is measured to be 35 ps (peak-peak) when the Clock-Data Recovery (CDR) module is turned on and the jitter of the downstream channel output after the cable is 138 ps (peak-peak). The power consumption of each upstream channel is 72 mW when the CDR module is turned on and the downstream channel consumes 27 mW. GBCR survives the total ionizing dose of 200 kGy.

47 OTHER INSTRUMENTATION↗

Performance of a Front End prototype ASIC for picosecond precision time measurements with LGAD sensors

For the High-Luminosity phase of LHC, the ATLAS experiment is proposing the addition of a High Granularity Timing Detector (HGTD) in the forward region, to mitigate the effects of the increased pile-up. The chosen detection technology is Low Gain Avalanche Detector (LGAD) silicon sensors that can provide an excellent timing resolution below 50 ps. The front-end read-out ASIC must exploit the large signal derivative and small noise provided by the sensor, while keeping low power consumption. This paper presents the results on the first prototype of a front-end ASIC, named ALTIROC0, which contains the analog stages (preamplifier and discriminator) of the read-out chip. The ASIC was characterised both alone and as part of a module with a 2×2 LGAD array of 1.1×1.1 mm 2 pads bump-bonded to it. The various contributions of the electronics to the time resolution were investigated in test-bench measurements with a calibration setup. Both when the ASIC is alone or with a bump-bonded sensor, the jitter of the ASIC is better than 20 ps for an injected charge of 10 fC. The time walk effect, which arises from the different preamplifier response for various injected charges, can be corrected up to 10 ps using a Time Over Threshold measurement. The combined performance of the ASIC and the LGAD sensor, which was measured during a beam test campaign in October 2018 with pions of 120 GeV energy at the CERN SPS, is around 40 ps for all measured modules. All tested modules show good efficiency and time resolution uniformity.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Investigation of ASIC-based signal readout electronics for LEGEND-1000

LEGEND, the Large Enriched Germanium Experiment for Neutrinoless ββ Decay, is a ton-scale experimental program to search for neutrinoless double beta (0νββ) decay in the isotope 76 Ge with an unprecedented sensitivity. Building on the success of the low-background 76 Ge-based GERDA and Majorana Demonstrator experiments, the LEGEND collaboration is targeting a signal discovery sensitivity beyond 10 28 yr on the decay half-life with approximately 10 t∙yr of exposure. Signal readout electronics in close proximity to the detectors plays a major role in maximizing the experiment's discovery sensitivity by reducing electronic noise and improving pulse shape analysis capabilities for the rejection of backgrounds. However, the proximity also poses unique challenges for the radiopurity of the electronics. Application-specific integrated circuit (ASIC) technology allows the implementation of the entire charge sensitive amplifier (CSA) into a single low-mass chip while improving the electronic noise and reducing the power consumption. In this work, we investigated the properties and electronic performance of a commercially available ASIC CSA, the XGLab CUBE preamplifier, together with a p-type point contact high-purity germanium detector. We show that low noise levels and excellent energy resolutions can be obtained with this readout. Moreover, we demonstrate the viability of pulse shape discrimination techniques for reducing background events.

47 OTHER INSTRUMENTATION↗