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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Polycrystalline SiC fibers from organosilicon polymers

Various organosilicon polymers have been converted into small diameter, fine-grained silicon carbide fibers by melt spinning, crosslinking, and pyrolyzing to greater than 1600 C. The high pyrolysis temperature densifies the fiber and causes CO evolution which removes nearly all oxygen. An additive prevents the loss of strength normally associated with such treatments. Silicon carbide fibres with up to 2.6 GPa (380 ksi) tensile strength, greater than 420 GPa (greater than 60 Msi) elastic modulus, and 3.1-3.2 mg/cu m density have been prepared via this process. Their microstructure consists of greater than 95 wt pct B-SiC crystallites averaging 30-40 nm diameter, with varying amounts of graphitic carbon between the SiC grains. Under inert conditions, the fibers can be thermally aged at least 12 h/1800 C with minimal change in properties.

Lipowitz, Jonathan↗
NASA NTRS1992

Screen Cage Ion Plating (SCIP) and scratch testing of polycrystalline aluminum oxide

A screen cage ion plating (SCIP) technique was developed to apply silver films on electrically nonconducting aluminum oxide. It is shown that SCIP has remarkable throwing power; surfaces to be coated need not be in direct line of sight with the evaporation source. Scratch tests, employing a diamond stylus with a 200 micro m radius tip, were performed on uncoated and on silver coated alumina. Subsequent surface analysis show that a significant amount of silver remains on the scratched surfaces, even in areas where high stylus load produced severe crack patterns in the ceramic. Friction coefficients were lowered during the scratch tests on the coated alumina indicating that this modification of the ion planting process should be useful for applying lubricating films of soft metals to electrical insulating materials. The very good throwing power of SCIP also strongly suggests general applicability of this process in other areas of technology, e.g., electronics, in addition to tribology.

Spalvins, Talivaldis↗
NASA NTRS1992

Metal-organic chemical vapour deposition of polycrystalline tetragonal indium sulphide (InS) thin films

The dimeric indium thiolate /(t Bu)2In(mu-S sup t Bu)/2 has been used as a single-source precursor for the MOCVD of InS thin films. The dimeric In2S2 core is proposed to account for the formation of the nonequilibrium high-pressure tetragonal phase in the deposited films. Analysis of the deposited films has been obtained by TEM, with associated energy-dispersive X-ray analysis and X-ray photoelectron spectroscopy.

Macinnes, Andrew N.↗
NASA NTRS1995

Bend stress relaxation and tensile primary creep of a polycrystalline alpha-SiC fiber

Understanding the thermomechanical behavior (creep and stress relaxation) of ceramic fibers is of both practical and basic interest. On the practical level, ceramic fibers are the reinforcement for ceramic matrix composites which are being developed for use in high temperature applications. It is important to understand and model the total creep of fibers at low strain levels where creep is predominantly in the primary stage. In addition, there are many applications where the component will only be subjected to thermal strains. Therefore, the stress relaxation of composite consituents in such circumstances will be an important factor in composite design and performance. The objective of this paper is to compare and analyze bend stress relaxation and tensile creep data for alpha-SiC fibers produced by the Carborundum Co. (Niagara Falls, NY). This fiber is of current technical interest and is similar in composition to bulk alpha-SiC which has been studied under compressive creep conditions. The temperature, time, and stress dependences will be discussed for the stress relaxation and creep results. In addition, some creep and relaxation recovery experiments were performed in order to understand the complete viscoelastic behavior, i.e. both recoverable and nonrecoverable creep components of these materials. The data will be presented in order to model the deformation behavior and compare relaxation and/or creep behavior for relatively low deformation strain conditions of practical concern. Where applicable, the tensile creep results will be compared to bend stress relaxation data.

Hee Man, Yun↗
NASA NTRS1996

Negative Electron Affinity Effect on the Surface of Chemical Vapor Deposited Diamond Polycrystalline Films

Strong negative electron affinity effects have been observed on the surface of as-grown chemical vapor deposited diamond using Secondary Electron Emission. The test samples were randomly oriented and the surface was terminated with hydrogen. The effect appears as an intensive peak in the low energy part of the spectrum of the electron energy distribution and may be described in the model of effective negative electron affinity.

Krainsky, I. L.↗
NASA NTRS1996

Kinetics of Static Strain Aging in Polycrystalline NiAl-based Alloys

The kinetics of yield point return have been studied in two NiAl-based alloys as a function of aging time at temperatures between 300 and 700 K. The results indicate that the upper yield stress increment, Delta sigma(sub u) (i.e., stress difference between the upper yield point and the final flow stress achieved during prestraining), in conventional purity (CP-NiAl) and in high purity carbon-doped (NiAl-C) material first increased with a t(exp 2/3) relationship before reaching a plateau. This behavior suggests that a Cottrell locking mechanism is the cause for yield points in NiAl. In addition, positive y-axis intercepts were observed in plots of Delta sigma(sub u) versus t(exp 2/3) suggesting the operation of a Snoek mechanism. Analysis according to the Cottrell Bilby model of atmosphere formation around dislocations yields an activation energy for yield point return in the range 70 to 76 kJ/mol which is comparable to the activation energy for diffusion of interstitial impurities in bcc metals. It is, thus, concluded that the kinetics of static strain aging in NiAl are controlled by the locking of dislocations by Cottrell atmospheres of carbon atoms around dislocations.

Weaver, M. L.↗
NASA NTRS2000

The Magnetic Properties Of Aggregate Polycrystalline Diamond: Implications For Carbonado Petrogenesis

Carbonados are a type of diamond, which are made up of many aggregrates of small crystalline diamonds or microdiamonds. The term "carbonado" comes from the Portuguese word carbonated. They are only found in sedimentary deposits in the Central African Republic (CAR) and the Bahia Province of Brazil. They were once the source of the world's supply of industrial diamonds. Their origin is uncertain but several mutually exclusive hypotheses have been proposed. This theories are: (1) extraterrestrial, that is they formed from the dust cloud of original solar nebulae; (2) produced by the high temperatures and pressures of the Earth's mantle; (3) or as the result of an extra-terrestrial impact into a carbon rich layer of sediment. Our study was done to further the understanding of their origin. We measured the magnetic properties on some twenty samples from the CAR. An earlier study was done on whole samples of carbonados and the "common" or kimberlitic diamond. Our work differed in that we started at the surface and subsequently removed the surface layers (by days of acid immersion) into the interior; measuring the magnetic properties at each interval. This procedure permits us to monitor the distribution of magnetic substances within the samples. Our results showed that the magnetic carriers are distributed on the surface including the open pores and that the carbonado interior is essentially non-magnetic. This result suggests that the initial formation environment was deficient in magnetic particles. Such a situation could indicate that their formation was the result of an extra-terrestrial body impacting carbon-rich sediment. Obviously, more work will be required on isotopic and chemical analyses before a more detailed ori-in can be determined.

Kleteschka, Gunther↗
NASA NTRS2001

High Temperature Mechanical Behavior of Polycrystalline Alumina from Mixed Nanometer and Micrometer Powders

Sintered aluminum oxide materials were formed using commercial methods from mechanically mixed powders of nano-and micrometer alumina. The powders were consolidated at 1500 and 1600 C with 3.2 and 7.2 ksi applied stress in argon. The conventional micrometer sized powders failed to consolidate. While 100 percent nanometer-sized alumina and its mixture with the micrometer powders achieved less than 99 percent density. Preliminary high temperature creep behavior indicates no super-plastic strains. However high strains (less than 0.65 percent) were generated in the nanometer powder, due to cracks and linked voids initiated by cavitation.

Goldsby, Jon C.↗
NASA NTRS2002

Creep Behavior of Near-Stoichiometric Polycrystalline Binary NiAl

New and published constant load creep and constant engineering strain rate data on near-stoichiometric binary NiAl in the intermediate temperature range 700 to 1300 K are reviewed. Both normal and inverse primary creep curves are observed depending on stress and temperature. Other characteristics relating to creep of NiAl involving grain size, stress and temperature dependence are critically examined and discussed. At stresses below 25 MPa and temperatures above 1000 K, a new grain boundary sliding mechanism was observed with n approx. 2, Qc approx. 100 kJ/ mol and a grain size exponent of about 2. It is demonstrated that Coble creep and accommodated grain boundary sliding models fail to predict the experimental creep rates by several orders of magnitude.

Raj, S. V.↗
NASA NTRS2002

Tensile Creep of Polycrystalline Near-Stoichiometric NiAl

Long term tensile creep studies were conducted on binary NiAl in the temperature range 700-1200 K with the objectives of characterizing and understanding the creep mechanisms. Inverse and normal primary creep curves were observed depending on stress and temperature. It was concluded that the creep of NiAl is limited by dislocation mobility. The stress exponent for creep, n, increased from 5.5 at 1200 K to 13.9 at 700 K. The true activation energy for creep, Qc, was constant and equal to about 400 kJ per mole between 20 and 50 MPa but decreased to a constant value of 250 kJ per mole between 50 and 110 MPa. The activation energy was observed to be stress dependent above 110 MPa. The tensile creep results reported in this investigation were compared with compression creep data reported in the literature. A detailed discussion of the probable dislocation creep mechanisms governing compressive and tensile creep of NiAl is presented. It is concluded that the non-conservative motion of jogs on screw dislocations influenced the nature of the primary creep curves, where the climb of these jogs involves either the next nearest neighbor or the six-jump cycle vacancy diffusion mechanism. The probable nature of the atom vacancy exchange that occur within the core of an edge dislocation undergoing climb in NiAl are schematically examined.

Raj, Sai V.↗
NASA NTRS2005

Synthesis, Characterization and Decomposition Studies of Tris(N,N-dibenzyldithiocarbamato) Indium(III): Chemical Spray Deposition of Polycrystalline CuInS2 on Copper Films

Tris(bis(phenylmethyl)carbamodithioato-S,S ), commonly referred to as tris(N,Ndibenzyldithiocarbamato) indium(III), In(S2CNBz2)3, was synthesized and characterized by single crystal X-ray crystallography. The compound crystallizes in the triclinic space group P1 bar with two molecules per unit cell. The material was further characterized using a novel analytical system employing the combined powers of thermogravimetric analysis, gas chromatography/mass spectrometry and Fourier-Transform infrared spectroscopy to investigate its potential use as a precursor for the chemical vapor deposition (CVD) of thin film materials for photovoltaic applications. Upon heating, the material thermally decomposes to release CS2 and benzyl moieties in to the gas phase, resulting in bulk In2S3. Preliminary spray CVD experiments indicate that In(S2CNBz2)3 decomposed on a Cu substrate reacts to produce stoichiometric CuInS2 films.

Hehemann, David G.↗