(Presentation) Effects of pulsed photoemission in plasma breakdown.
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Photoelectric yield data on n- and p-type silicon carbide crystals in vacuum UV
Wurtzite CdSe and CdS electronic structure determined by study of photoemitted electron energy distribution, noting electron-electron scattering effects
Photomultiplier tubes performance enhancement by light incidence on photocathode at oblique angles explained by reflection
Photoelectric emission properties of iron, copper, nickel, aluminum, and molybdenum
Photon interaction with gases and solids in vacuum ultraviolet region
The results are presented of analyses of 3371-A profiles measured by the visible airglow experiment reported by Hayes et al. (1973). The measured emission rate profiles are presented as functions of the O and N2 densities determined simultaneously by means of an open source mass spectrometer. The experimental methods used are discussed along with the obtained results. The experimental data are compared with theoretical predictions. It is found that the 3371-A emission depends greatly on the O/N2 concentration ratio.
Superficially oxidized cesium antimonide photoemitting surfaces prepared in ultrahigh vacuum were studied by X-ray photoelectron spectroscopy. Oxidation of Cs3Sb to produce a surface with enhanced photosensitivity converts part of the antimony to elemental antimony and part of the cesium to cesium suboxide. The latter is identified on the basis of an O1 s peak at 531.3 eV, characteristic of Cs11O3. The production of Cs2O is not ruled out in this process since its signature at 527.5 eV is masked by an antimony shake-up peak at 527 eV.
A new technique for surface EXAFS has been developed. In this technique the absorption fine structure is observed by monitoring the photoelectrons emitted from core levels as a function of photon energy. The surface sensitivity is achieved by detecting elastic photoelectrons that escape to the vacuum from a few atomic layers near the surface. EXAFS from Mn 3p and F2s outer core levels in MnF2 were measured, the results were compared with transmission EXAFS from Mn ls core level and good agreement was found. This development is significant because: (1) almost all elements have suitable core levels of low binding energy; (2) since photopeaks from adjacent core levels do not cross as the photon energy is varied, the limitations imposed on other surface EXAFS techniques by this interference is removed. Auger electrons, which have fixed kinetic energies and so can cross photopeaks, will generally have low energies if they originate from outer core levels and be unlikely to appear in the EXAFS region of kinetic energies, i.e., in excess of about 50 eV; (3) VUV light is used, which greatly extends the usable range of photon energies; (4) more than one element in a solid may be studied with the same monochromator. The experiments were carried out on the VUV beam line U14A at NSLS.
Photoelectron spectroscopy is frequently used to study band bending in semiconductors due to charge stored in surface or interface states. This paper examines how such experimental results are modified by photovoltages generated within the band-bending region not only by ambient light sources, but by the incident X-rays themselves. Recent experiments which have suggested dopant-dependent and reversible temperature-dependent band bending in the initial stages of formation of the metal-GaAs(110) interface are used as an example. It is shown that the reported dependence derives from a photovoltaic effect.
The interaction of strontium films with the underlaying Si (100) surface and the Sr-promoted low-temperature oxidation of Si were investigated, using XPS, at three different Sr coverages (theta): theta = 0.55 monolayer (ML), theta = 1 ML, and theta = 1.85 ML. Oxygen adsorption was studied both at room temperature and at 500 C, and at oxygen exposures up to 2 x 10 to the 6th L (1 L = 10 to the -6th torr) and 2 x 10 to the 5th L, respectively. The XPS spectra of the Si2p, O1s, and Sr3d core levels were measured for the atomically clean Si, the Sr-covered Si, and for the Sr-covered Si after each oxygen exposure. Results indicate that Sr interacts with the Si(100) surface forming a strong ionic bond, and that Sr promotes the oxidation of the Si (100) surface.