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At least 235 records · Page 13

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NASA NTRS1979

A study to investigate the chemical stability of gallium phosphate oxide/gallium arsenide phosphide

The elemental composition with depth into the oxide films was examined using secondary ion mass spectrometry. Results indicate that the layers are arsenic-deficient through the bulk of the oxide and arsenic-rich near both the oxide surface and the oxide-semiconductor interface region. Phosphorus is incorporated into the oxide in an approximately uniform manner. The MIS capacitor structures exhibited deep-depletion characteristics and hysteresis indicative of electron trapping at the oxide-semiconductor interface. Post-oxidation annealing of the films in argon or nitrogen generally results in slightly increased dielectric leakage currents and decreased C-V hysteresis effects, and is associated with arsenic loss at the oxide surface. The results of bias-temperature stress experiments indicate that the major instability effects are due to changes in the electron trapping behavior. No changes were observed in the elemental profiles following electrical stressing, indicating that the grown films are chemically stable under device operating conditions.

Kuhlman, G. J.↗

NASA NTRS1979

Evaluation and auger analysis of a zinc-dialkyl-dithiophosphate antiwear additive in several diester lubricants

The wear of pure iron in sliding contact with hardened M-2 tool steel was measured for a series of synthetic diester fluids, both with and without a zinc dialkyl dithiophosphate (ZDP) antiwear additive, as test lubricants. Selected wear scars were analyzed by an Auger emission spectroscopy (AES) depth profiling technique in order to assess the surface film elemental composition. The ZDP was an effective antiwear additive for all the diesters except dibutyl oxalate and dibutyl sebacate. The high wear measured for the additive-containing oxalate was related to corrosion; the higher wear measured for the additive-containing sebacate was due to an oxygen interaction. The AES of dibutyl sebacate surfaces run in dry air and in dry nitrogen showed large differences only in the amount of oxygen present. The AES of worn surfaces where the additive was effective showed no zinc, only a little phosphorus, and large amounts of sulfur.

Brainard, W. A.↗

NASA NTRS1978

Advances in the Dow Corning process for solar-grade silicon

The Dow Corning process consists of the carbothermic reduction of silica to produce silicon that is then purified by unidirectional solidification. The process has produced silicon of semiconductor quality with respect to all elements except boron and phosphorus at about 10 ppma and aluminum at 0.1 ppma. Solar cells produced from this silicon gave AM0 conversion efficiencies of 11%. A process cost analysis is presented.

Hunt, L. P.↗

NASA NTRS1980

Effects of impurities in coal-derived liquids on accelerated hot corrosion of superalloys

A Mach 0.3 burner rig was used to determine the effects of potential coal derived liquid fuel impurity combustion of products on hot corrosion in IN-100, IN-792, IN_738, U-700, Mar M-509, and 304 stainless steel. The impurities, added as aqueous solutions to the combustor, were salts of sodium, potassium, vanadium, molybdenum, tungsten, phosphorus, and lead. Extent of attack was determined by metal consumption and compared to the effects of sodium alone. Vanadium, molybdenum, tungsten, phosphorous, and lead in combination with sodium all resulted in increased attack as compared with sodium alone at some temperatures, apparently due in large part to the extension of the formation of liquid deposits. Varying the sodium-potassium ratio had little effect for ratios less than 1:3 for which reduced, but measurable, attack was observed.

Deadmore, D. L.↗

NASA NTRS1980

Effect of immobilization stress on the level of macroergic phosphates in the blood of rats

The effect of immobilization for 1, 2, and 24 hours, and of daily (for 2 hours for 7 days) immobilization on the blood nucleotide (ATP, ADP, AMP) level was studied on 79 male rats. A progressive reduction of the ATP content was most pronounced in immobilization for 24 hours. This was accompanied by an increase of lymphopenia and eosinopenia. A fall of the relative weight of the thymus and a weight gain of the adrenal glands was observed along with a reduction of ascorbic acid concentration in both of them. In case of daily immobilization for 2 hours, the ATP and ADP content on the 1st and 2nd day was below the normal level, and then showed a gradual increase, with complete normalization in 6-7 days, except for inorganic phosphorus the level of which remained lower than normal.

Pudov, V. I.↗

NASA NTRS1980

Study program to improve the open-circuit voltage of low resistivity single crystal silicon solar cells

The results of a 14 month program to improve the open circuit voltage of low resistivity silicon solar cells are described. The approach was based on ion implantation in 0.1- to 10.0-ohm-cm float-zone silicon. As a result of the contract effort, open circuit voltages as high as 645 mV (AMO 25 C) were attained by high dose phosphorus implantation followed by furnace annealing and simultaneous SiO2 growth. One key element was to investigate the effects of bandgap narrowing caused by high doping concentrations in the junction layer. Considerable effort was applied to optimization of implant parameters, selection of furnace annealing techniques, and utilization of pulsed electron beam annealing to minimize thermal process-induced defects in the completed solar cells.

Minnucci, J. A.↗

NASA NTRS1979

Development of pulsed processes for the manufacture of solar cells

Low-energy ion implantation processes for the automated production of silicon solar cells were investigated. Phosphorus ions at an energy of 10 keV and dose of 2 x 10 to the 15th power/sq cm were implanted in silicon solar cells to produce junctions, while boron ions at 25 keV and 5 x 10 to the 15th power were implanted in the cells to produce effective back surface fields. An ion implantation facility with a beam current up to 4 mA and a production throughput of 300 wafers per hour was designed and installed. A design was prepared for a 100 mA, automated implanter with a production capacity of 100 MW sub e/sq cm per year. Two process sequences were developed which employ ion implantation and furnace or pulse annealing. A computer program was used to determine costs for junction formation by ion implantation and various furnace annealing cycles to demonstrate cost effectiveness of these methods.

Minnucci, J. A.↗

NASA NTRS1980

Heat resistant polymers of oxidized styrylphosphine

A flame resistant, nontoxic polymer which may be used safely in confined locations where there is inadequate ventilation is prepared either by polymerizing compounds having the formula R-N=P(C6H5)2(C6H4)CH=CH2 where R is an organic moeity selected from the group of (C6H5)2P(O)-, (C6H5O)2P(O)-, (C6H5)2 C3N3-, or their mixtures, or by reacting a polymer with an organic azide such as diphenylphosphinylazide, diphenyl-phosphorylazide, 2-azido-4,6-diphenly-5-triazine, 2,4-diazido-6-phenyl-s-triazine, trimethylsilyoazide, triphenylsilylazine, and phenylazine. The reaction of the styrylphosphine with the organozaide results in the oxidation of the trivalent phosphorus atom to the pentavalent state in the form of an unsaturated P=N linkage known as a phosphazene group.

Paciorek, K. J. L.↗

NASA NTRS1980

Heat storage in alloy transformations

The feasibility of using metal alloys as thermal energy storage media was investigated. The elements selected as candidate media were limited to aluminum, copper, magnesium, silicon, zinc, calcium, and phosphorus on the basis of low cost and latent heat of transformation. Several new eutectic alloys and ternary intermetallic phases were determined. A new method employing X-ray absorption techniques was developed to determine the coefficients of thermal expansion of both the solid and liquid phases and the volume change during phase transformation. The method and apparatus are discussed and the experimental results are presented for aluminum and two aluminum-eutectic alloys. Candidate materials were evaluated to determine suitable materials for containment of the metal alloys. Graphite was used to contain the alloys during the volume change measurements. Silicon carbide was identified as a promising containment material and surface-coated iron alloys were also evaluated. System considerations that are pertinent if alloy eutectics are used as thermal energy storage media are discussed. Potential applications to solar receivers and industrial furnaces are illustrated schematically.

Birchenall, C. E.↗

NASA NTRS1980

Post-breakdown bulk oscillations in gold-doped silicon p/+/-i-n/+/ double-injection diodes

Experimental results on postbreakdown bulk oscillations in n-type gold-doped phosphorus-compensated p(+)-i-n(+) double-injection diodes is presented. It is suggested that changes observed in the postbreakdown oscillation frequency and amplitude are due to changes in the prebreakdown characteristics. An empirical relationship for the frequency of oscillation is derived. It is concluded that the postbreakdown oscillations are drift-related, although their exact mechanism is not known.

Mantha, B.↗

NASA NTRS1980

The effects of titanium impurities in N/+//P silicon solar cells

Microscopic and electrical measurements were performed to explain the degradation mechanisms associated with the presence of titanium impurities in silicon. The measurements included X-ray topography, transmission electron microscopy, and deep level transient spectroscopy, before and after processing. The results indicated the presence of TiO2 precipitates, the density of which increased after phosphorus diffusion. A majority carrier trapping level was observed in the wafers before processing. It was concluded that 10% of the Ti in the N(+)/P silicon solar cells formed electrically active centers which caused degradation of the cell junction. 14% of the remaining Ti precipitated out as TiO2, forming electrically active defects, which also caused junction degradation.

Salama, A. M.↗

NASA NTRS1980

Impurities in silicon solar cells

The paper investigates the effects of metallic impurities on the performance of silicon solar cells. Czochralski and polycrystalline ingots were employed with boron and phosphorus as primary dopants and with controlled additions of secondary impurities. The data obtained from over 200 crystals indicate that impurity-induced performance loss is primarily due to a reduction of the base diffusion length. Based on this observation, a model is developed which predicts cell performance as a function of secondary impurity concentrations. The model calculations are in good agreement with experimental values except for Cu, Ni, Fe, and to a lesser degree, carbon, which at higher concentrations degrade the cell by junction defect mechanisms.

Davis, J. R., Jr.↗

NASA NTRS1980

Thermophysical and flammability characterization of phosphorylated epoxy adhesives

Some of the thermophysical and flammability properties of a phosphorylated epoxy adhesive, which has potential applications in aircraft interior panels, are described. The adhesive consists of stoichiometric ratios of bis(3-glycidyloxphenyl)methylphosphine oxide and bis(3-aminophenyl)methylphosphine oxide containing approximately 7.5% phosphorus. Preliminary data are presented from adhesive bonding studies conducted utilizing this adhesive with polyvinyl fluoride (PVF) film and phenolic-glass laminates. Limiting oxygen index and smoke density data are presented and compared with those of the tetraglycidyl methylene dianiline epoxy resin-adhesive system currently used in aircraft interiors. Initial results indicate that the phosphorylated epoxy compound has excellent adhesive properties when used with PVF film and that desirable fire-resistant properties are maintained.

Kourtides, D. A.↗

NASA NTRS1982

Improved Fire-Resistant Resins for Laminates

Fire-resistant resins for fabricating laminates with inorganic fibers, especially graphite fibers, are formed from bisimides containing main-chain phosphorus and olefinic end groups. Bisimides are thermally polymerized to form resins and laminates virtually imcombustible in pure oxygen at 300 degrees C. New resins are suitable for many applications requiring good adhesion and excellent resistance to heat, fire, solvents and chemicals.

Fohlen, G. M.↗

NASA NTRS1982

Plasma Deposition of Amorphous Silicon

Strongly adhering films of silicon are deposited directly on such materials as Pyrex and Vycor (or equivalent materials) and aluminum by a non-equilibrium plasma jet. Amorphous silicon films are formed by decomposition of silicon tetrachloride or trichlorosilane in the plasma. Plasma-jet technique can also be used to deposit an adherent silicon film on aluminum from silane and to dope such films with phosphorus. Ability to deposit silicon films on such readily available, inexpensive substrates could eventually lead to lower cost photovoltaic cells.

Calcote, H. F.↗

NASA NTRS1979

Efficient solar cells by space processing

Thin films of electron beam evaporated silicon were deposited on molybdenum, tantalum, tungsten and molybdenum disilicide under ultrahigh vacuum conditions. Mass spectra from a quadrapole residual gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry. The presence of phosphorus in the silicon was responsible for attaining elevated temperatures with silicide formations. Heteroepitaxial silicon growth was sensitive to the presence of oxygen during deposition, the rate and length of deposition as well as the substrate orientation.

Schmidt, F. A.↗

NASA NTRS1978

A study of trends and techniques for space base electronics

Furnaces and photolithography related equipment were applied to experiments on double layer metal. The double layer metal activity emphasized wet chemistry techniques. By incorporating the following techniques: (1) ultrasonic etching of the vias; (2) premetal clean using a modified buffered hydrogen fluoride; (3) phosphorus doped vapor; and (4) extended sintering, yields of 98 percent were obtained using the standard test pattern. The two dimensional modeling problems have stemmed from, alternately, instability and too much computation time to achieve convergence.

Trotter, J. D.↗

NASA NTRS1981

Laser annealing of ion implanted CZ silicon for solar cell junction formation

The merits of large spot size pulsed laser annealing of phosphorus implanted, Czochralski grown silicon for function formation of solar cells are evaluated. The feasibility and requirements are also determined to scale-up a laser system to anneal 7.62 cm diameter wafers at a rate of one wafer/second. Results show that laser annealing yields active, defect-free, shallow junction devices. Functional cells with AM 1 conversion efficiencies up to 15.4% for 2 x 2 cm and 2 x 4 cm sizes were attained. For larger cells, 7.62 cm dia., conversion efficiencies ranged up to 14.5%. Experiments showed that texture etched surfaces are not compatible with pulsed laser annealing due to the surface melting caused by the laser energy. When compared with furnace annealed cells, the laser annealed cells generally exhibited conversion efficiencies which were equal to or better than those furnace annealed. In addition, laser annealing has greater throughput potential.

Katzeff, J. S.↗