Microelectronics on the Lunar Orbiter.
Lunar Orbiter flight programmer, electronic design, development, application and performance
SYSTEMS DESIGN↗
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Results for “microelectronics”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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New microelectronic power amplifier
Integrated push-pull power amplifier fabricated on a chip of silicon has interdigitated power transistors and is hermetically encapsulated in a beryllia flat package. It provides current output greater than the nominal 10 amperes from an input current drive of 1 ampere.
New, T. C.↗
Design of microelectronic circuits Final report
Monte Carlo computer analysis method for yield and reliability predictions of integrated circuits
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Reliability assurance - Study of failure and reliability of microelectronic devices Quarterly report, 1 Apr. - 30 Jun. 1968
Reliability assurance of microminiaturized electronic devices
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Development of a microelectronic module Interim scientific report, 1 Apr. 1967 - 31 Mar. 1968
Gallium arsenide n-p-n transistors using different crystal materials and fabrication technologies
Doerbeck, F.↗
Microelectronic parametric amplifier.
Integrated S band parametric amplifier design and fabrication using microstrip techniques, describing times four multiplier
Block, A.↗
The further development of scanning electron microscopy in the microelectronics field semiannual report, 1 jan. - 30 jun. 1968
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Shaw, D. A.↗
Microelectronic device data handbook
Handbook provides general guidance to the technology of integrated circuits for readers with little or no experience. It does not supply solutions to specific design problems, but is heavily footnoted to the original sources.
Source record↗
Development of ion implantation techniques for microelectronics
Ion implantation process for fabricating active devices in high bandgap semiconductor materials for high temperature operation
Dunlap, H. L.↗
Improvement of laminar-flow equipment for microelectronic application Final report, 1 Jun. 1967 - 31 May 1968
Laminar flow benches for particulate contamination control in air flow
Rymarz, T. M.↗
Microelectronic data and control transmission system for dynamic wind-tunnel testing
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Nichols, C. D.↗
Temperature-independent resistor for microelectronic circuits
Heat treating insulating crystals in gaseous hydrogen atmosphere produce resistive device which is temperature-independent from 77 to 295 degrees K. Increasing the concentration of hydrogen within the crystal yields semiconductor, hybrid, and metallic conduction characteristics which are combined with a depletion layer at the surface.
Aegerter, S.↗
Development of qualification test program for microelectronic devices Final report, 1 Nov. 1968 - 3 Jul. 1969
Qualification test program for digital monolithic integrated circuit devices
Binelli, W. D.↗
Development of ion implantation techniques for microelectronics
Ion implantation techniques for p-n junction diodes of silicon carbide and gallium arsenide
Dunlap, H. L.↗
Evaluation of microbonding techniques used in hybrid microelectronic circuits
Microbonding techniques used in hybrid microcircuit production
Caruso, S. V.↗
Development of ion implantation techniques for microelectronics
Ion implantation forming of conducting layers and p-n junctions in gallium arsenide and silicon carbide
Dunlap, H.↗
Advanced microelectronics research for space applications, phase 2
Negative-resistance circuits with possible space flight applications are discussed. The basic design approach is to use impedance rotation, i.e., the conversion from capacitance to negative resistance, and from resistance to inductance by the phase shift of the transistor current gain at high frequencies. The subjects discussed in detail are the following: hybrid fabrication of VHF and UHF negative-resistance stages with lumped passive elements; formulation of measurement techniques to characterize transistors and to extend the frequency of negative-resistance transistor amplifiers to higher microwave frequencies; and derivation of transistor characteristics required to increase the frequency range of negative-resistance transistor stages.
Gaertner, W. W.↗
Microelectronic device data handbook
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