A low power NAND gate integrated circuit employing thin film resistors and lateral p-n-p transitors Final engineering report
Low power NAND gate integrated circuit employing thin film resistors and lateral p-n-p transistors
Source record↗
SEARCH · Engineering Papers
Results for “integrated circuits”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Modeling "Soft" Errors in Bipolar Integrated Circuits
Mathematical models represent single-event upset in bipolar memory chips. Physics of single-event upset in integrated circuits discussed in theoretical paper. Pair of companion reports present mathematical models to predict critical charges for producing single-event upset in bipolar randomaccess memory (RAM) chips.
Zoutendyk, J.↗
Split-cross-bridge resistor for testing for proper fabrication of integrated circuits
An electrical testing structure and method is described whereby a test structure is fabricated on a large scale integrated circuit wafer along with the circuit components and has a van der Pauw cross resistor in conjunction with a bridge resistor and a split bridge resistor, the latter having two channels each a line width wide, corresponding to the line width of the wafer circuit components, and with the two channels separated by a space equal to the line spacing of the wafer circuit components. The testing structure has associated voltage and current contact pads arranged in a two by four array for conveniently passing currents through the test structure and measuring voltages at appropriate points to calculate the sheet resistance, line width, line spacing, and line pitch of the circuit components on the wafer electrically.
Buehler, M. G.↗
SPICE Modeling of Body Bias Effect in 4H-SiC Integrated Circuit Resistors
The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.
Neudeck, Philip G.↗
An Integrated Circuit for Radio Astronomy Correlators Supporting Large Arrays of Antennas
Radio telescopes that employ arrays of many antennas are in operation, and ever larger ones are being designed and proposed. Signals from the antennas are combined by cross-correlation. While the cost of most components of the telescope is proportional to the number of antennas N, the cost and power consumption of cross-correlationare proportional to N2 and dominate at sufficiently large N. Here we report the design of an integrated circuit (IC) that performs digital cross-correlations for arbitrarily many antennas in a power-efficient way. It uses an intrinsically low-power architecture in which the movement of data between devices is minimized. In a large system, each IC performs correlations for all pairs of antennas but for a portion of the telescope's bandwidth (the so-called "FX" structure). In our design, the correlations are performed in an array of 4096 complex multiply-accumulate (CMAC) units. This is sufficient to perform all correlations in parallel for 64 signals (N=32 antennas with 2 opposite-polarization signals per antenna). When N is larger, the input data are buffered in an on-chipmemory and the CMACs are re-used as many times as needed to compute all correlations. The design has been synthesized and simulated so as to obtain accurate estimates of the IC's size and power consumption. It isintended for fabrication in a 32 nm silicon-on-insulator process, where it will require less than 12mm2 of silicon area and achieve an energy efficiency of 1.76 to 3.3 pJ per CMAC operation, depending on the number of antennas. Operation has been analyzed in detail up to N = 4096. The system-level energy efficiency, including board-levelI/O, power supplies, and controls, is expected to be 5 to 7 pJ per CMAC operation. Existing correlators for the JVLA (N = 32) and ALMA (N = 64) telescopes achieve about 5000 pJ and 1000 pJ respectively usingapplication-specific ICs in older technologies. To our knowledge, the largest-N existing correlator is LEDA atN = 256; it uses GPUs built in 28 nm technology and achieves about 1000 pJ. Correlators being designed for the SKA telescopes (N = 128 and N = 512) using FPGAs in 16nm technology are predicted to achieve about 100 pJ.
ASIC↗
High-performance packaging for monolithic microwave and millimeter-wave integrated circuits
Packaging schemes were developed that provide low-loss, hermetic enclosure for advanced monolithic microwave and millimeter-wave integrated circuits (MMICs). The package designs are based on a fused quartz substrate material that offers improved radio frequency (RF) performance through 44 gigahertz (GHz). The small size and weight of the packages make them appropriate for a variety of applications, including phased array antenna systems. Packages were designed in two forms; one for housing a single MMIC chip, the second in the form of a multi-chip phased array module. The single chip array module was developed in three separate sizes, for chips of different geometry and frequency requirements. The phased array module was developed to address packaging directly for antenna applications, and includes transmission line and interconnect structures to support multi-element operation. All packages are fabricated using fused quartz substrate materials. As part of the packaging effort, a test fixture was developed to interface the single chip packages to conventional laboratory instrumentation for characterization of the packaged devices. The package and test fixture designs were both developed in a generic sense, optimizing performance for a wide range of possible applications and devices.
Shalkhauser, K. A.↗
High-performance packaging for monolithic microwave and millimeter-wave integrated circuits
Packaging schemes are developed that provide low-loss, hermetic enclosure for enhanced monolithic microwave and millimeter-wave integrated circuits. These package schemes are based on a fused quartz substrate material offering improved RF performance through 44 GHz. The small size and weight of the packages make them useful for a number of applications, including phased array antenna systems. As part of the packaging effort, a test fixture was developed to interface the single chip packages to conventional laboratory instrumentation for characterization of the packaged devices.
Shalkhauser, K. A.↗
Inclusion of Body-Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors
The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 C durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.
Neudeck, Philip G.↗
Practical SiC JFET-R Analog Integrated Circuit Design for Extreme Environment Applications
Silicon carbide (SiC) junction field effect transistor and SiC resistor (SiC JFET-R) integrated circuits(ICs) have uniquely demonstrated prolonged operation above 450 °C that promises significant operational improvements to a variety of NASA missions. However, the SiC epiwafers used to fabricate these ICs suffer from epi-growth process immaturity that imparts large and systematic spreads in JFET threshold voltages as a function of the device distance from the center on the wafer. Furthermore, the unprecedently wide range of intended application operating temperatures (in many cases over 600 °C wide) imparts as much as 5-fold change in JFET bias currents. This Technical Memorandum documents methods by which both temperature and radius associated JFET electrical parameter variances can be adequately eliminated, or even exploited in JFET-R circuit designs. Full analog circuit examples, including operational amplifiers, and SPICE simulations across experimentally documented SiC JFET parameter extremes are given to illustrate the efficacy of these methods. The reader may use the examples in this memorandum as either an end point, to get a desired analog signal conditioning design into hardware implemented in SiC JFET-R ICs, or as a basis point from which to derive further improvement.
Michael J Krasowski↗
Semicustom integrated circuits and the standard transistor array radix (STAR)
The development, application, pros and cons of the semicustom and custom approach to the integration of circuits are described. Improvements in terms of cost, reliability, secrecy, power, and size reduction are examined. Also presented is the standard transistor array radix, a semicustom approach to digital integrated circuits that offers the advantages of both custom and semicustom approaches to integration.
Edge, T. M.↗
System-Level Integrated Circuit (SLIC) Technology Development for Phased Array Antenna Applications
This report documents the efforts and progress in developing a 'system-level' integrated circuit, or SLIC, for application in advanced phased array antenna systems. The SLIC combines radio-frequency (RF) microelectronics, digital and analog support circuitry, and photonic interfaces into a single micro-hybrid assembly. Together, these technologies provide not only the amplitude and phase control necessary for electronic beam steering in the phased array, but also add thermally-compensated automatic gain control, health and status feedback, bias regulation, and reduced interconnect complexity. All circuitry is integrated into a compact, multilayer structure configured for use as a two-by-four element phased array module, operating at 20 Gigahertz, using a Microwave High-Density Interconnect (MHDI) process. The resultant hardware is constructed without conventional wirebonds, maintains tight inter-element spacing, and leads toward low-cost mass production. The measured performances and development issues associated with both the two-by-four element module and the constituent elements are presented. Additionally, a section of the report describes alternative architectures and applications supported by the SLIC electronics. Test results show excellent yield and performance of RF circuitry and full automatic gain control for multiple, independent channels. Digital control function, while suffering from lower manufacturing yield, also proved successful.
Windyka, John A.↗
Monolithic microwave integrated circuit devices for active array antennas
Two different aspects of active antenna array design were investigated. The transition between monolithic microwave integrated circuits and rectangular waveguides was studied along with crosstalk in multiconductor transmission lines. The boundary value problem associated with a discontinuity in a microstrip line is formulated. This entailed, as a first step, the derivation of the propagating as well as evanescent modes of a microstrip line. The solution is derived to a simple discontinuity problem: change in width of the center strip. As for the multiconductor transmission line problem. A computer algorithm was developed for computing the crosstalk noise from the signal to the sense lines. The computation is based on the assumption that these lines are terminated in passive loads.
Mittra, R.↗
Inclusion of Body Bias Effect in SPICE Modeling of 4H-SiC Integrated Circuit Resistors
The DC electrical behavior of n-type 4H-SiC resistors used for realizing 500 degrees Celsius durable integrated circuits (ICs) is studied as a function of substrate bias and temperature. Improved fidelity electrical simulation is described using SPICE NMOS model to simulate resistor substrate body bias effect that is absent from the SPICE semiconductor resistor model.
Neudeck, Philip G.↗
Saturn integrated circuit reliability test program Final report, 28 Jun. 1966 - 1 Jul. 1967
Literature survey and test program to study reliability of linear integrated circuits
Carpenter, M. R.↗
SEM analysis of ionizing radiation effects in linear integrated circuits
A successful diagnostic technique was developed using a scanning electron microscope (SEM) as a precision tool to determine ionization effects in integrated circuits. Previous SEM methods radiated the entire semiconductor chip or major areas. The large area exposure methods do not reveal the exact components which are sensitive to radiation. To locate these sensitive components a new method was developed, which consisted in successively irradiating selected components on the device chip with equal doses of electrons /10 to the 6th rad (Si)/, while the whole device was subjected to representative bias conditions. A suitable device parameter was measured in situ after each successive irradiation with the beam off.
Stanley, A. G.↗
Novel Low Loss Wide-Band Multi-Port Integrated Circuit Technology for RF/Microwave Applications
In this paper, novel low loss, wide-band coplanar stripline technology for radio frequency (RF)/microwave integrated circuits is demonstrated on high resistivity silicon wafer. In particular, the fabrication process for the deposition of spin-on-glass (SOG) as a dielectric layer, the etching of microvias for the vertical interconnects, the design methodology for the multiport circuits and their measured/simulated characteristics are graphically illustrated. The study shows that circuits with very low loss, large bandwidth, and compact size are feasible using this technology. This multilayer planar technology has potential to significantly enhance RF/microwave IC performance when combined with semi-conductor devices and microelectromechanical systems (MEMS).
Simons, Rainee N.↗
Techniques for control of long-term reliability of complex integrated circuits. I - Reliability assurance by test vehicle qualification.
Development of an alternate approach to the conventional methods of reliability assurance for large-scale integrated circuits. The product treated is a large-scale T squared L array designed for space applications. The concept used is that of qualification of product by evaluation of the basic processing used in fabricating the product, providing an insight into its potential reliability. Test vehicles are described which enable evaluation of device characteristics, surface condition, and various parameters of the two-level metallization system used. Evaluation of these test vehicles is performed on a lot qualification basis, with the lot consisting of one wafer. Assembled test vehicles are evaluated by high temperature stress at 300 C for short time durations. Stressing at these temperatures provides a rapid method of evaluation and permits a go/no go decision to be made on the wafer lot in a timely fashion.
Van Vonno, N. W.↗
Development of a plan for automating integrated circuit processing
The operations analysis and equipment evaluations pertinent to the design of an automated production facility capable of manufacturing beam-lead CMOS integrated circuits are reported. The overall plan shows approximate cost of major equipment, production rate and performance capability, flexibility, and special maintenance requirements. Direct computer control is compared with supervisory-mode operations. The plan is limited to wafer processing operations from the starting wafer to the finished beam-lead die after separation etching. The work already accomplished in implementing various automation schemes, and the type of equipment which can be found for instant automation are described. The plan is general, so that small shops or large production units can perhaps benefit. Examples of major types of automated processing machines are shown to illustrate the general concepts of automated wafer processing.
Source record↗