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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Power Conversion Systems Enabled by SiC BiDFET Device

The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. Furthermore, the matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac-ac and ac dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

42 ENGINEERING↗
DOE OSTI2020

Design Paradigm for Modular Multilevel Converter-Based Generator Rectifier Systems

Modular Multilevel Converters (MMC) are being widely considered for medium to high voltage DC applications. Designing such converters through multi-objective optimization is of interest because such an approach allows the trade-off between competing objectives (for example mass and loss) to be explicitly and quantitatively identified. In this work, an optimization based design paradigm for MMC based generator rectifier systems is proposed. Such development typically requires detailed component design and simulation models for the electric machine and converter which are computationally expensive. As an alternative, the proposed work utilizes an electric machine metamodel, inductor metamodel, and high-speed steady-state simulation model for the MMC to facilitate multi-objective optimization minimizing system metrics of interest while satisfying system constraints. A case study is undertaken to demonstrate the functionality of the proposed design paradigm.

42 ENGINEERING↗
DOE OSTI2020

Aging Effect Analysis of PV Inverter Semiconductors for Ancillary Services Support

PV inverters can provide reactive power while generating active power. An ongoing microgrid implementation at Duke Energy actively engages non-utility PVs to generate/absorb reactive power in support of ancillary services to increase microgrid resiliency during extreme events. PV systems are requested to provide reactive power support: 1) in response to grid voltage variation to better regulate the local voltage; or 2) in response to utility incentives, such as following Transactive Energy System (TES) incentives. However, providing ancillary services might shorten the lifetime expectation of PV inverter semiconductors. This paper summarizes the potential impacts on a PV inverter semiconductor's lifetime when providing ancillary services. The analysis presented in this research work shows that providing reactive power support will increase the mean junction temperature and the junction temperature variation of the inverter diodes. This increased junction temperature will eventually lead to shorter diode lifetime. The lifetime estimation of semiconductors is briefly reviewed. The power losses of PV inverter semiconductors are derived as a support analysis to the junction temperature calculation. In addition, the impact of the filtering inductor on the semiconductor current distribution is discussed. The theoretical analysis presented in this research work is supported by simulation results.

14 SOLAR ENERGY↗
DOE OSTI2023

Low-loss Si-based Dielectrics for High Frequency Components of Superconducting Detectors

Silicon-based dielectric is crucial for many superconducting devices, including high-frequency transmission lines, filters, and resonators. Defects and contaminants in the amorphous dielectric and at the interfaces between the dielectric and metal layers can cause microwave losses and degrade device performance. Optimization of the dielectric fabrication, device structure, and surface morphology can help mitigate this problem. We present the fabrication of silicon oxide and nitride thin film dielectrics. We then characterized them using Scanning Electron Microscopy, Atomic Force Microscopy, and spectrophotometry techniques. The samples were synthesized using various deposition methods, including Plasma-Enhanced Chemical Vapor Deposition and magnetron sputtering. The film's morphology and structure were modified by adjusting the deposition pressure and gas flow. The resulting films were used in superconducting resonant systems consisting of planar inductors and capacitors. Measurements of the resonator properties, including their quality factor, were performed.

low-loss dielectrics↗
DOE OSTI2020

Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully understood. This article unveils the comprehensive physics associated with the surge-energy withstand process and the failure mechanisms of p-gate GaN HEMTs. Two commercial p-gate GaN HEMTs with Ohmic- and Schottky-type gate contacts are studied. Two circuits are developed to study the device surge ruggedness: an unclamped inductive switching circuit is first used to identify the withstand dynamics and failure mechanisms, and a clamped inductive switching circuit with a controllable parasitic inductance is then designed to mimic the surge energy in converter-like switching events. The p-gate GaN HEMT is found to withstand the surge energy through a resonant energy transfer between the device capacitance and the load/parasitic inductance rather than a resistive energy dissipation as occurred in the avalanche. If the device resonant voltage goes below zero, the device reversely turns on and the inductor is discharged. The device failure occurs at the transient of peak resonant voltage and is limited by the device overvoltage capability rather than the surge energy, dV/dt , or overvoltage duration. Almost no energy is dissipated in the resonant withstand process and the device failure is dominated by an electric field rather than a thermal runaway. Furthermore, these results provide critical understandings on the ruggedness of GaN HEMTs and important references for their qualifications and applications.

42 ENGINEERING↗
DOE OSTI2020

Soft-Switching Solid-State Transformer With Reduced Conduction Loss

Solid-state transformers (SSTs) are a promising solution photovoltaic (PV), wind, traction, data center, battery energy storage system (BESS), and fast charging electric vehicle (EV) applications. The traditional SSTs are typically three-stage, i.e., hard-switching cascaded multilevel rectifiers and inverters with dual active bridge (DAB) converters, which leads to bulky passives, low efficiency, and high electromagnetic interference (EMI). This article proposes a new soft-switching solid-state transformer (S4T). The S4T has full-range zero-voltage switching (ZVS), electrolytic capacitor-less dc link, and controlled dv/dt, which reduces EMI. The S4T comprises two reverse-blocking current-source inverter (CSI) bridges, auxiliary branches for ZVS, and transformer magnetizing inductor as a reduced dc link with 60% ripple. Compared with the prior S4T, an effective change on the leakage inductance diode is made to reduce the number of the devices on the main power path by 20% for significant conduction loss saving and retain the same functionality of damping the resonance between the leakage and resonant capacitors and recycling trapped leakage energy. The conduction loss saving is crucial, being the dominating loss mechanism in SSTs. Importantly, the proposed single-stage SST not only holds the potential for high power density and high efficiency but also has full functionality, e.g., multiport dc loads integration, voltage regulation, and reactive power compensation, unlike the traditional single-stage matrix SST. The S4T can achieve single-stage isolated bidirectional dc–dc, ac–dc, dc–ac, or ac–ac conversion. It can also be configured input-series output-parallel (ISOP) in a modular way for medium-voltage (MV) grids. Hence, the S4T is a promising candidate for the SST. The full functionality, e.g., voltage buck–boost, multiport, etc., and the universality of the S4T for the dc–dc, dc–ac, and ac–ac conversion are verified through the simulations and experiments of two-port and three-port MV prototypes based on 3.3 kV SiC MOSFETs in dc–dc, dc–ac, and ac–ac modes at 2 kV.

14 SOLAR ENERGY↗
DOE OSTI2023

Control Design of Passive Grid-Forming Inverters in Port-Hamiltonian Framework

This article presents a modified dispatchable virtual oscillator control approach for achieving the passivity of gridforming inverters (GFMs), without assuming constant voltage and constant frequency. The proposed control framework utilizes the Port-Hamiltonian (PH) based structure that mimics the behaviors of coupled harmonic oscillators, along with an energy ‘pumpingor-damping’ block and the Control by Interconnection (CbI) technique, to render the inverter passive. Once passivity is achieved, transient stability of the system will be guaranteed. The proposed control framework is composed of three loops: an outer power dispatching loop that generates the voltage and frequency references, a virtual oscillator loop that emulates the spontaneous synchronization of oscillators, and an inductor current loop that maintains lossless interconnection in PH systems. In conclusion, the study shows that the proposed control approach ensures the passivity of GFMs, facilitating the transient stability design of multi-inverter systems, as interconnections of passive systems remain passive and stable.

42 ENGINEERING↗
DOE OSTI2024

A Compact, Single Stage, >1 kV Medium-Voltage Line Impedance Stabilization Network

This paper presents the design of a single-phase, single-stage line impedance stabilization network (LISN) for medium-voltage (MV) applications. More than 1 kV rated widebandgap (WBG) power semiconductor switches are increasingly utilized in new, emerging power electronics energy systems to improve power density and efficiency. However, due to inherently fast-switching speeds, WBG switch modules emit considerable electromagnetic interference (EMI) (e.g., common mode (CM) or differential mode (DM)). State-of-the-art offers standardized LISN solutions to validate and certify the new energy system for electromagnetic compatibility (EMC). However, most are for low voltage applications (i.e., < 1 kV). MV LISNs (i.e., > 1 kV) are rare until recently and literature does not provide sufficient guidelines for designing and characterizing such devices. It has been a critical challenge for many scientists and engineers to reliably certify the emerging MV energy systems (e.g., electric ships and aircraft). This paper addresses such a technology gap. Specifically, a CISPR 16-1-2 compliant 50Ω/50μH LISN with 1.5kV, 75A and 30MHz measurement capability has been proposed. Detailed performance study versus non-linear parasitic parameters variations in MV inductors and capacitors have been done. Based on new understandings, novel techniques to intuitively mitigate unwanted parasitic have been proposed to develop the proposed LISN successfully. Thorough characterization of important LISN parameters are presented and factors influencing them are analyzed. A rigorous analysis, experimental tests, and in-depth comparisons over state-of-the-art have been made to validate the effectiveness. This is done through the state-of-the-art 300kVA MV EMI testbed.

42 ENGINEERING↗
DOE OSTI2020

The Computational Capacity of Mem-LRC Reservoirs

Reservoir computing has a emerged as a powerful tool in data-driven time series analysis. The possibility of utilizing hardware reservoirs as specialized co-processors has generated interest in the properties of electronic reservoirs, especially those based on memristors as the nonlinearity of these devices should translate to an improved nonlinear computational capacity of the reservoir. However, designing these reservoirs requires a detailed understanding of how memristive networks process information which has thus far been lacking. In this work, we derive an equation for general memristor-inductor-resistor-capacitor (MEM-LRC) reservoirs that includes all network and dynamical constraints explicitly. Utilizing this we undertake a study of the computational capacity of these reservoirs. We demonstrate that hardware reservoirs may be constructed with extensive memory capacity and that the presence of memristors enacts a tradeoff between memory capacity and nonlinear computational capacity. Here, using these principles, we design reservoirs to tackle problems in signal processing, paving the way for applying hardware reservoirs to high-dimensional spatiotemporal systems.

Circuits with memory↗
DOE OSTI2021

Synthesis and behavior of bulk iron nitride soft magnets via high-pressure spark plasma sintering

Abstract In this study, dense bulk iron nitrides (Fe x N) were synthesized for the first time ever using spark plasma sintering (SPS) of Fe x N powders. The Fe 4 N phase of iron nitride in particular has significant potential to serve as a new soft magnetic material in both transformer and inductor cores and electrical machines. The density of SPSed Fe x N increased with SPS temperature and pressure. The microstructure of the consolidated bulk Fe x N was characterized with X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and superconducting quantum interference device (SQUID) magnetometry. XRD revealed a primary phase of Fe 4 N with secondary phases of Fe 3 N and metallic iron. Finite element analysis (FEA) was also applied to investigate and explain localized heating and temperature distribution during SPS. The effects of processing on interface bonding formation and phase evolution were investigated and discussed in detail to provide insight into fundamental phenomena and microstructural evolution in SPSed Fe x N. Graphic abstract

36 MATERIALS SCIENCE↗
DOE OSTI2020

(U) PRAD0697 & PRAD0698: Complex Loading of CeO₂ Powder

Cerium(IV) oxide (CeO₂) powder is shock compressed using the Precision High Energy-density Liner Implosion eXperiment (PHELIX) platform. Experimental results are compared against several modeling approaches. Compaction behavior is best captured with a P-∝ model, which calculates CeO₂ powder bulk densities within 80-99% of experimental values but overpredicts densi cation at the cylindrical target's outer radius and center by up to 20%. Preliminary calculations suggest that accuracy could be increased with the inclusion of a coupled strength model. Several common computational modeling approaches for the shock compression response of granular materials and the magnetohydrodynamic (MHD) force upon the impactor/liner in pulsed power compression experiments are investigated and analyzed for their validity. The Bi-linear Ramp, P-∝ PACXP, and P-∝ Menikoff-Kober continuum compaction models are calibrated to planar impact Hugoniot data for CeO₂ powder and used to predict the powder's shock compaction response under non-planar shock wave compression. MHD calculations of the PHELIX pulsed power driver are performed using an idealized resistor-inductor-capacitor (RLC) circuit calibrated to previous experiments. All simulations are performed using the LANL code FLAG. Two validation experiments are computationally designed using the calibrated compaction and circuit models, executed using the PHELIX platform on CeO₂ targets with initial porous densities of 3.95 and 4.03 g/cm³, measured with proton radiography, and analyzed against the model predictions. The two P-∝ models more accurately describe CeO₂ powder densi cation than the Bi-linear Ramp model. However, the two P-∝ models overpredict bulk density of the shock compressed CeO₂ powder by up to 20% when the appropriate impact velocities are applied. MHD calculations for both validation experiments underpredict liner impact velocities by 4-11% when using the idealized RLC circuit model calibrated to previous experiments. Compensating underpredictions of impact velocity and overpredictions of powder densication lead to a false accuracy in pre-shot calculations compared to experimental data. To improve correlation between simulations and experiments, the following improvements are suggested: 1. A coupled strength model for CeO₂ powder that updates strength as a function of porosity and applied stress. 2. An improved MHD circuit model that more accurately captures the PHELIX machine.

36 MATERIALS SCIENCE↗
DOE OSTI2020

High-Speed Active Integrators for Magnetic Probes

This report discusses a low cost, easy to develop instrument to measure magnetic fields in pulsed solenoids used for the MagNIF pulse power system. The instrument is designed to integrate voltage signals from custom B-dot probes made from PCB inductor chips. The instrument is battery powered with ± 9V rails. Acceptable B-dot probe inputs range from mV to 20V with frequencies up to 4MHz. Details of the circuit design and practical considerations for working with high speed signals are discussed.

42 ENGINEERING↗
DOE OSTI2021

Numerical and Analytical Modeling of the Effect of Cracks on the Self-Inductance of a COTS YJ-41003-TC Toroid

COTS inductors and transformers often contain partial cracks whose effect on inductance, a key performance parameter, have not been carefully studied. In this report, the effects of both partial and complete cracks on the self-inductance of a 100 turn square cross section COTS YJ-41003-TC toroid comprised of J Material was comprehensively investigated using both analytically derived closed form expressions and 3D computational techniques employing commercial codes. Both partial (half-penny) and complete (air gap) cracks of 10 and 25 μm were investigated. The crack is defined as the physical distance between two faces of the toroid's magnetic core, such that the surface normal of either face is along the Φ-direction, in alignment with the B-field. For the purposes of validation, two different approaches were incorporated for both the analytical and numerical models. The two analytical methods are comprised of a first principles approach based on the physics of electromagnetics, as well as linear circuit theory. The former directly utilizes the integral form of Maxwell's equations while the latter exploits the interchangeable relationship between electric and magnetic circuits. Validation within the computational scheme is realized through a code-to-code comparison between commercial solvers, COMSOL Multiphysics and CST, with the former employing the Finite Element Method (FEM) and the latter the Finite Difference Time Domain (FDTD) technique. Sound agreement between all four methods (ie., two analytical and two numerical) is observed, with results indicating that only a perturbation in self-inductance occurs for the half-penny cracks, while a substantial reduction takes place for the case of complete cracks. It is important to note that even though a static μ r is applied, representing the linear region of the BH curve (based on manufacturer specifications), the complete crack results still place a lower conservative bound on the inductance. This follows from the fact that even in the case of a half-penny crack, if the magnetic core portion of the crack approaches saturation, the crack begins to behave like an air gap, or complete crack. When an air gap is introduced into a magnetic core, a substantial reduction in inductance can occur due to the significant difference in permeabilities between the two mediums (ie., μ core >> μ air ). The once intact bulk magnetic core of the toroid essentially begins to behave like an air core.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Modeling and Measuring the Stress Distribution in Soft Magnetic Cores due to Epoxy Impregnation and Curing

Understanding the effects of viscoelastic relaxation of stresses is critical in electric motor and inductor applications, where the magnetic material is fully or partially comprised of an amorphous phase and impregnated in an epoxy. Magnetic Amorphous Nanocomposites (MANCs) are a class of recently developed high-frequency magnetic materials that exhibit low magnetic hysteresis, high saturation flux density and very low AC magnetic losses. MANCs are formed as long, thin ribbons, a shape factor that minimizes eddy current-induced self-heating. This feature, in addition to their 1 GPa strength, and makes them attractive candidates for high-speed, high-power density, electric motors. MANCs are used in the form of tape-wound cores (TWCs). During the manufacturing process, the cores are impregnated with liquid epoxy between each layer of ribbon. Validated knowledge of the stresses imposed by the manufacturing process and during operation is necessary to understand motor performance limitations with respect to strength. Magnetostriction, the strain imposed by reversal of the magnetic field, also affects performance. When the epoxy cures, it contracts volumetrically by 8%, imposing radial and circumferential stresses that vary along the radial direction. To date, these stresses have received little attention in the literature. Here, we model the stress distribution throughout a TWC due to epoxy curing. Strain gauge measurements reported here indicate substantially lower tangential strain than model values, which is beneficial and which we attribute to viscoelastic relaxation of the epoxy layers. We will incorporate a constitutive model of this viscoelastic relaxation, and conduct more detailed strain measurements to understand how this takes

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Development of a Beam Sweeping System for the Fermilab Antiproton Source Target

Intensity of the incident 120-GeV proton beam on the antiproton production target is scheduled to increase to 5x10 12 protons per pulse. To prevent damage to the target, we plan to spread the hot spot on target with a beam sweeping system, Now under development are rotating-field magnets for installation upstream and downstream of the target. These magnets will deflect the beam in a circular pattern on the target. Peak current of 7 kA and peak voltage drop of 6 kV are expected. The power supply, which is separated from the magnet by a distance of about 10 m, utilizes magnetic pulse compression by saturating inductors to drive the magnets through the long transmission lines.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Non-contact based measurement of thin film coatings using eddy current measurements

When a time varying magnetic field attempts to penetrate a conductive surface, the surface will respond to that time varying field by the generation of circular currents around the flux lines. This effect is described by Faraday’s law of induction. An eddy current based measurement system attempts to discern the power loss incurred by these circulating currents within the conductive surface. The measurement system described here uses an Agilent E 4980A LCR meter to quantify the reaction of the film to the high frequency magnetic field lines which are forced into the film. The measurement metric is the meter’s interpretation of the power dissipation caused by the measured film. The meter is setup to use the Ls/Rs inductor model, and is run at 1 Mhz to bring the losses within the film as high as possible for sensitivity.

43 PARTICLE ACCELERATORS↗
DOE OSTI2024

Magnetics, Inc. 0077894A7 (Datasheet)

Description of Core Under Test (CUT). Magnetics, Inc. 0077894A7 is a powder core material having low loss and high saturation fields. Known for the marketing name Kool Mu, was transformed by taking the known magnetic material, Sendust, and altered the manufacturing process to lower core losses. Possessing these specific properties makes it ideal for power factor correction circuits as well Pulse and Flyback Transformers. In-Line Noise Filters and Inductors are also common due to the near zero magnetostriction. Exhibits a potential saturation induction of 1 T.

36 MATERIALS SCIENCE↗
DOE OSTI2023

PV Inverter Systems Enabled by Monolithically Integrated SiC based Four Quadrant Power Switch (4-QPS) [BiDFET]

The purpose of this project was to develop a new breed of Power Conversion Systems (PCS) for PV integration that is enabled by the newly developed 4-Quadrant Single Die SiC Power Semiconductor Switches (4-QPS) or also referred to as “Bidirectional FET (BIDFET)”. This work includes semiconductor die development, advanced packaging, converter design, development, and testing of 4-QPS enabled hardware prototypes at 1 kW (for single phase residential application) and 10 kW (for three phase commercial application). The BiDirectional Field-Effect Transistor (BiDFET) can enable circuit topologies requiring four-quadrant switches, that were earlier designed using discrete combinations of MOSFETs, IGBTs, GaN HEMTs, and PiN diodes. The monolithic nature of the BiDFET allows lower device count, smaller switch volume, lower inductance, and simpler packaging, and hence more reliable and commercially viable implementation in power electronics converters. The matrix converter topologies, now feasible using BiDFETs, can eliminate the bulky and unreliable dc link capacitors or inductors required for conventional voltage-source or current-source converters in ac–ac and ac–dc applications. The 1.2 kV BiDFET has the potential to disrupt all the applications utilizing 1.2 kV switches, including electric vehicle (EV) drivetrain, bidirectional EV chargers, industrial motor drives, solid-state transformers, datacenter power supplies, elevator drives, dc microgrids, energy storage grid integration, solid-state breakers, etc.

24 POWER TRANSMISSION AND DISTRIBUTION↗