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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Plasma Deposited SiO2 for Planar Self-Aligned Gate Metal-Insulator-Semiconductor Field Effect Transistors on Semi-Insulating InP

Metal-insulator-semiconductor (MIS) field effect transistors were fabricated on InP substrates using a planar self-aligned gate process. A 700-1000 A gate insulator of Si02 doped with phosphorus was deposited by a direct plasma enhanced chemical vapor deposition at 400 mTorr, 275 C, 5 W, and power density of 8.5 MW/sq cm. High frequency capacitance-voltage measurements were taken on MIS capacitors which have been subjected to a 700 C anneal and an interface state density of lxl0(exp 11)/eV/cq cm was found. Current-voltage measurements of the capacitors show a breakdown voltage of 107 V/cm and a insulator resistivity of 10(exp 14) omega cm. Transistors were fabricated on semi-insulating InP using a standard planar self-aligned gate process in which the gate insulator was subjected to an ion implantation activation anneal of 700 C. MIS field effect transistors gave a maximum extrinsic transconductance of 23 mS/mm for a gate length of 3 microns. The drain current drift saturated at 87.5% of the initial current, while reaching to within 1% of the saturated value after only 1x10(exp 3). This is the first reported viable planar InP self-aligned gate transistor process reported to date.

Tabory, Charles N.↗
NASA NTRS1996

Highly Efficient Amplifier for Ka-Band Communications

An amplifier developed under a Small Business Innovation Research (SBIR) contract will have applications for both satellite and terrestrial communications. This power amplifier uses an innovative series bias arrangement of active devices to achieve over 40-percent efficiency at Ka-band frequencies with an output power of 0.66 W. The amplifier is fabricated on a 2.0- by 3.8-square millimeter chip through the use of Monolithic Microwave Integrated Circuit (MMIC) technology, and it uses state-of-the-art, Pseudomorphic High-Electron-Mobility Transistor (PHEMT) devices. Although the performance of the MMIC chip depends on these high-performance devices, the real innovations here are a unique series bias scheme, which results in a high-voltage chip supply, and careful design of the on-chip planar output stage combiner. This design concept has ramifications beyond the chip itself because it opens up the possibility of operation directly from a satellite power bus (usually 28 V) without a dc-dc converter. This will dramatically increase the overall system efficiency. Conventional microwave power amplifier designs utilize many devices all connected in parallel from the bias supply. This results in a low-bias voltage, typically 5 V, and a high bias current. With this configuration, substantial I(sup 2) R losses (current squared times resistance) may arise in the system bias-distribution network. By placing the devices in a series bias configuration, the total current is reduced, leading to reduced distribution losses. Careful design of the on-chip planar output stage power combiner is also important in minimizing losses. Using these concepts, a two-stage amplifier was designed for operation at 33 GHz and fabricated in a standard MMIC foundry process with 0.20-m PHEMT devices. Using a 20-V bias supply, the amplifier achieved efficiencies of over 40 percent with an output power of 0.66 W and a 16-dB gain over a 2-GHz bandwidth centered at 33 GHz. With a 28-V bias, a power level of 1.1 W was achieved with a 12-dB gain and a 36-percent efficiency. This represents the best reported combination of power and efficiency at this frequency. In addition to delivering excellent power and gain, this Ka-band MMIC power amplifier has an efficiency that is 10 percent greater than existing designs. The unique design offers an excellent match for spacecraft applications since the amplifier supply voltage is closely matched to the typical value of spacecraft bus voltage. These amplifiers may be used alone in applications of 1 W or less, or several may be combined or used in an array to produce moderate power, Ka-band transmitters with minimal power combining and less thermal stress owing to the combination of excellent efficiency and power output. The higher voltage operation of this design may also save mass and power because the dc-dc power converter is replaced with a simpler voltage regulator.

Source record↗
DOE OSTI2020

Study of the structure of exploding flat foils at superhigh current density

We have investigated the features produced in flat metal foils as a result of nanosecond explosions and phase transitions at current densities of (0.1–2) • 10 9 A/cm 2 . Thin foils made of aluminum, copper, nickel, and titanium, with thicknesses of 1–15 μm, were tested. Here, the exploded foil structure was studied using X-pinch radiography and laser shadow imaging. Al, Ti, and Cu (5 and 7 μm thick) foils had an initial two-dimensional structure. At the same time, no apparent structure was registered in 1 μm Cu and 5 μm Ni foils. Experiments on generators with different output parameters have shown that the dominant structures that developed in the explosion are either cracks or bubbles and may depend on the orientation of the initial structure in the thin foil with respect to the current direction. In addition, the energy deposited in the foil differs by a factor of about 1.5 for the orthogonal vs parallel current and initial foil structure directions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

A High-Accuracy Power Loss Model of SiC MOSFETs in Current Source Inverter Considering Current Commutation and Parasitic Parameters

Power loss estimation of power electronic devices is important to the efficiency optimization of motor drives used in many applications. However, most existing simplified power loss models of silicon carbide (SiC) MOSFETs are not sufficiently accurate due to their neglect of parasitic parameters in the current commutation loop. In addition, the loss model of the voltage source inverter (VSI) cannot be directly applied to the current source inverter (CSI) because of differences between their commutation loops. First, the commutation processes for VSIs and CSIs are compared. The voltage and current trajectories of SiC MOSFETs in the switching transition of a CSI-based motor drive system are analyzed in detail. Based on these results, the conduction and switching losses of SiC MOSFETs in CSIs are modeled considering the current commutation details. In addition, the proposed analytical model includes parasitic inductances and capacitances in the current commutation loop. Experimental results have verified that the proposed power loss model delivers higher accuracy loss predictions than the conventional loss model.

current commutation, current source inverter, powe↗
DOE OSTI2021

In-flight positional and energy use data set of a DJI Matrice 100 quadcopter for small package delivery

Abstract We autonomously directed a small quadcopter package delivery Uncrewed Aerial Vehicle (UAV) or “drone” to take off, fly a specified route, and land for a total of 209 flights while varying a set of operational parameters. The vehicle was equipped with onboard sensors, including GPS, IMU, voltage and current sensors, and an ultrasonic anemometer, to collect high-resolution data on the inertial states, wind speed, and power consumption. Operational parameters, such as commanded ground speed, payload, and cruise altitude, were varied for each flight. This large data set has a total flight time of 10 hours and 45 minutes and was collected from April to October of 2019 covering a total distance of approximately 65 kilometers. The data collected were validated by comparing flights with similar operational parameters. We believe these data will be of great interest to the research and industrial communities, who can use the data to improve UAV designs, safety, and energy efficiency, as well as advance the physical understanding of in-flight operations for package delivery drones.

42 ENGINEERING↗
NASA NTRS1981

Direct measurement of lower atmospheric vertical potential differences

A high impedance system has been developed to make direct measurements of the atmospheric potential difference up to several thousand feet. A tethered balloon flown from Wallops Island, Virginia was used to loft a high voltage, insulated wire and a conducting collector in a test flight to 550 meters for two days of experiments in October 1980. The balloon was equipped with a payload to measure exact altitude, wind speed and direction, and other meteorological parameters. Electric potentials of 170,000 volts at 550 meters were measured. The collected currents which could be drawn through the wire by grounding the lower end were in the 10 microamp range indicating a system impedance of about 10 to the 10th ohms. This paper describes the apparatus and details of these measurements.

Holzworth, R. H.↗
NASA NTRS1977

Engineering of beam direct conversion for a 120-kV, 1-MW ion beam

Practical systems for beam direct conversion are required to recover the energy from ion beams at high efficiency and at very high beam power densities in the environment of a high-power neutral-injection system. Such an experiment is now in progress using a 120-kV beam with a maximum total current of 20 A. After neutralization, the H(+) component to be recovered will have a power of approximately 1 MW. A system testing these concepts has been designed and tested at 15 kV, 2 kW in preparation for the full-power tests. The engineering problems involved in the full-power tests affect electron suppression, gas pumping, voltage holding, diagnostics, and measurement conditions. Planning for future experiments at higher power includes the use of cryopumping and electron suppression by a magnetic field rather than by an electrostatic field. Beam direct conversion for large fusion experiments and reactors will save millions of dollars in the cost of power supplies and electricity and will dispose of the charged beam under conditions that may not be possible by other techniques.

Barr, W. L.↗
DOE OSTI2020

1.2 kV, 10 A, 4H-SiC Bi-Directional Field Effect Transistor (BiDFET) with Low On-State Voltage Drop

Bidirectional power switches are used in matrix-or cyclo-converters and in multistage inverter circuits to facilitate high-frequency AC-to-AC conversion. A new 1.2 kV bidirectional MOSFET (BiDFET) with low on-resistance is achieved and demonstrated using two discrete SiC power MOSFET bare die chips, packaged within a four-terminal custom-designed module. Static and dynamic characterization has been carried out to inspect the on-state and switching behaviour of the BiDFET. Here, the BiDFET is shown to have a low forward voltage drop of 0.6 V at a current of 10 A, which is more than 2.5x smaller than previous Si IGBT and SiC MOSFET based bidirectional switch implementations.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Mechanically activated and deactivated ion transport across nanopores with heterogeneous surface charge distributions

To mimic the intricate and adaptive functionalities of biological ion channels, electrohydrodynamic ion transport has been studied extensively, albeit mostly, across uniformly charged nanochannels. Here, we analyze the ion transport under coupled electric field and pressure across heterogeneously charged nanopores with oppositely charged sections on their lateral surface. We only consider such pores with symmetric hourglass-like and cylindrical shapes to focus on the effects of the non-uniform surface charge distribution. Finite-element simulations of a continuum model demonstrate that a pressure applied in either direction of the pore-axis equally suppresses or amplifies the ionic conductance, depending on the electric field polarity, by distorting the quasi-static distribution of ions in the pore. The resulting anomalous mechanical deactivation and activation of ionic current under opposite voltage biases exhibit the functional modularity of our setup, while their intensities are highly tunable, substantially greater than those of analogous behaviors in other nanochannels, and fundamentally correlated to ionic current rectification (ICR) in our pores. A detailed study of ICR subsequently reveals its counterintuitive non-monotonous variations, in the pores, with the magnitude of applied voltage and the pore length, that can help optimize their diode-like behavior. We further illustrate that while the hourglass-shaped nanopores yield the more efficient mechanical suppressors of ion transport, their cylindrical analogs are the superior rectifiers and mechanical amplifiers of ion conduction. Therefore, this article provides a blueprint for the strategic design of nanofluidic circuits to attain a robust, modular, and tunable control of ion transport under external electrical and mechanical stimuli.

Physics↗
DOE OSTI2021

Roadmap for Advanced Power System Measurements

Conditions in the electric power grid are changing rapidly. Changes are driven, in particular, by the increased penetration of renewable resources in the generation mix. Part of the solution to dealing with the changing conditions is the better use of measurement systems, taking advantage of the better understanding of measurements that was heralded by digital technology. Another part of the solution is the communication of samples of the directly observable voltages and currents by means of continuous point-on-wave values. The increased bandwidth capability of such a system allows more complicated measurement models to be built at the point of use. Additional measurements and analyses can then be performed. This Roadmap hinges on these two aspects of measuring: improved measurements supported by high-bandwidth (raw data) communications. Following an introduction to the overall subject, the report explores the impact of what can be thought of as the digital revolution in measurement. In essence, that revolution has served to clarify ideas about measurement and is continuing to lead to improved processes. An extensive survey of the relevant literature was performed . Webinars were held to learn from the wider community of practitioners. Based on this information, a number of gaps were identified whose continued existence would hamper the solution of the challenges now facing measurement and communication in the power grid. The underlying value propositions are interoperability (presently not very satisfactory in many measurements); greater (and less challenging) adoption of distributed energy resources; and improved international competitiveness. Underlying all that, of course, is progress toward a more reliable and resilient power system. The identified gaps were addressed in four major thrusts: technology deployment and demonstration, education, instrumentation testing and standards, and analytical methods. For each of the thrusts, multiple goals are defined to guide the implementation. The thrusts were designed to close gaps and unlock high-value use cases. After discussing the literature review, gap analysis, high-value use cases, and research thrusts in chapters 2-5, the report culminates in chapter 6 with a roadmap that links each aspect together to form a unified plan. Developing a research portfolio aligned with this plan will ensure that advanced measurement systems are in place to support reliable operation of the power system as it modernizes.

24 POWER TRANSMISSION AND DISTRIBUTION↗
NASA NTRS2016

Free-Piston Stirling Power Conversion Unit for Fission Power System, Phase II Final Report

In Phase II, the manufacture and testing of two 6-kW(sub e)Stirling engines was completed. The engines were delivered in an opposed 12-kW(sub e) arrangement with a common expansion space heater head. As described in the Phase I report, the engines were designed to be sealed both hermetically and with a bolted O-ring seal. The completed Phase II convertor is in the bolted configuration to allow future disassembly. By the end of Phase II, the convertor had passed all of the final testing requirements in preparation for delivery to the NASA Glenn Research Center. The electronic controller also was fabricated and tested during Phase II. The controller sets both piston amplitudes and maintains the phasing between them. It also sets the operating frequency of the machine. Details of the controller are described in the Phase I final report. Fabrication of the direct-current to direct-current (DC-DC) output stage, which would have stepped down the main controller output voltage from ~700 to 120 V(sub DC), was omitted from this phase of the project for budgetary reasons. However, the main controller was successfully built, tested with the engines, and delivered. We experienced very few development issues with this high-power controller. The project extended significantly longer than originally planned because of yearly funding delays. The team also experienced several hardware difficulties along the development path. Most of these were related to the different thermal expansions of adjacent parts constructed of different materials. This issue was made worse by the large size of the machine. Thermal expansion problems also caused difficulties in the brazing of the opposed stainless steel sodium-potassium (NaK) heater head. Despite repeated attempts Sunpower was not able to successfully braze the opposed head under this project. Near the end of the project, Glenn fabricated an opposed Inconel NaK head, which was installed prior to delivery for testing at Glenn. Engine development prior to this was performed using both single- and dual-opposed (common expansion space) Inconel heads with clamp-on electric heaters.

Free-piston Stirling Power Conversion Unit↗
DOE OSTI2020

Organic thin-film transistors with a bottom bilayer gate dielectric having a low operating voltage and high operational stability

This study reports on p-channel bottom-gate organic thin-film transistors (OTFT) that achieve low-voltage operation with a thin bilayer gate dielectric of CYTOP/HfO 2 that also leads to high operational stability. A bottom-gate geometry allows the thickness of the gate dielectric to be reduced to 17 nm, thereby increasing the gate dielectric capacitance density to a value of up to 258 nF/cm 2 . All OTFTs yielded threshold voltages (V TH ) lower than -1 V, thereby providing minimum operating voltage (gate to source voltage ~ V TH ) of -1 V with field-effect mobility values in the range from 0.3 to 0.8 cm 2 /Vs and subthreshold swing values below 100 mV/dec. Operational stability during DC bias stress was found similar to that measured in devices with a top-gate geometry, with about 1% of drain current change after 6 h. Here, using a double-stretched exponential function, the operational stability characteristics were modeled. It was found that by increasing the metal oxide layer thickness, the threshold voltage can shift toward positive values under DC stress tests. For CYTOP layer thicknesses above 15 nm, a thicker CYTOP layer was found to shift the threshold voltage in the opposite direction toward negative values. Furthermore, these p-channel bottom-gate organic transistor with a bilayer gate dielectric of CYTOP/HfO 2 combine high mobility, high operational stability, and lower voltage operation of -1 V compared to top-gate OTFTs.

36 MATERIALS SCIENCE↗
NASA NTRS1997

Eddy Current Method for Fatigue Testing

Flux-focusing electromagnetic sensor using a ferromagnetic flux-focusing lens simplifies inspections and increases detectability of fatigue cracks and material loss in high conductivity material. A ferrous shield isolates a high-turn pick-up coil from an excitation coil. Use of the magnetic shield produces a null voltage output across the receiving coil in presence of an unflawed sample. Redistribution of the current flow in the sample caused by the presence of flaws. eliminates the shielding condition and a large output voltage is produced, yielding a clear unambiguous flaw signal. Maximum sensor output is obtained when positioned symmetrically above the crack. By obtaining position of maximum sensor output, it is possible to track the fault and locate the area surrounding its tip. Accuracy of tip location is enhanced by two unique features of the sensor; a very high signal-to-noise ratio of the probe's output resulting in an extremely smooth signal peak across the fault, and a rapidly decaying sensor output outside a small area surrounding the crack tip enabling the search region to be clearly defined. Under low frequency operation, material thinning due to corrosion causes incomplete shielding of the pick-up coil. Low frequency output voltage of the probe is therefore a direct indicator of thickness of the test sample. Fatigue testing a conductive material is accomplished by applying load to the material, applying current to the sensor, scanning the material with the sensor, monitoring the sensor output signal, adjusting material load based on the sensor output signal of the sensor, and adjusting position of the sensor based on its output signal.

Simpson, John W.↗
DOE OSTI2024

Design considerations of series type hybrid circuit breaker (S‐HCB)

Abstract The series‐type direct current (DC) hybrid circuit breaker (S‐HCB) concept was previously reported to offer better performance than solid‐state circuit breakers (SSCB) and hybrid circuit breakers (HCB). S‐HCB offers low conduction power loss like an HCB and ‐scale interruption time, which is even faster than an SSCB. It uses a pulse transformer to isolate the lower‐voltage high‐inductance power electronic circuit from the high‐voltage, low‐inductance main power loop. This paper provides analysis of the impact of the S‐HCB circuit components on the overall system performance and a scalable S‐HCB design guide for different DC system voltage and current ratings. In addition, system energy flow analysis is performed in the time domain to provide an understanding of how energy is delivered, dissipated, and released throughout the entire fault interruption process. The S‐HCB prototype was experimentally tested at 3 kV/30 A and 6 kV/150A with the results showing the interruption of the low fault current of 30 A and the high fault current of 150 A within 8 and maintaining the fault current at a near zero value for 300 to enable an arcless opening of a series mechanical switch. The key design challenges of S‐HCB at high voltage and high current ratings were discussed and possible solutions to mitigate those challenges were introduced.

Alashi, Mahmoud↗
DOE OSTI2022

Formation of tubular conduction channel in a SiGe(P)/Si core/shell nanowire heterostructure

Realizing a tubular conduction channel within a one-dimensional core–shell nanowire (NW) enables better understanding of quantum phenomena and exploration of electronic device applications. Herein, we report the growth of a SiGe(P)/Si core/shell NW heterostructure using a chemical vapor deposition coupled with vapor–liquid–solid growth mechanism. The entire NW heterostructure behaves as a p-type semiconductor, which demonstrates that the high-density carriers are confined within the 4 nm-thick Si shell and form a tubular conduction channel. These findings are confirmed by both calculations and the gate-dependent current–voltage ( I d – V g ) characteristics. Atomic resolution microscopic analyses suggest a coherent epitaxial core/shell interface where strain is released by forming dislocations along the axial direction of the NW heterostructure. Additional surface passivation achieved via growing a SiGe(P)/Si/SiGe core/multishell NW heterostructure suggests potential strategies to enhance the tubular carrier density, which could be further modified by improving multishell crystallinity and structural design.

36 MATERIALS SCIENCE↗
NASA NTRS2001

Electromagnetic Modeling of Distributed-Source-Excitation of Coplanar Waveguides: Applications to Traveling-Wave Photomixers

In this work an electromagnetic model and subsequent design is presented for a traveling-wave, coplanar waveguide (CPW) based source that will operate in the THz frequency regime. The radio frequency (RF) driving current is a result of photoexcitation of a thin GaAs membrane using two frequency-offset lasers. The GaAs film is grown by molecular-beam-epitaxy (MBE) and displays sub-ps carrier lifetimes which enable the material conductivity to be modulated at a very high rate. The RF current flows between electrodes deposited on the GaAs membrane which are biased with a DC voltage source. The electrodes form a CPW and are terminated with a double slot antenna that couples the power to a quasi-optical system. The membrane is suspended above a metallic reflector to launch all radiation in one direction. The theoretical investigation and consequent design is performed in two steps. The first step consists of a direct evaluation of the magnetic current distribution on an infinitely extended coplanar waveguide excited by an impressed electric current distributed over a finite area. The result of the analysis is the difference between the incident angle of the laser beams and the length of the excited area that maximizes the RF power coupled to the CPW. The optimal values for both parameters are found as functions of the CPW and membrane dimensions as well as the dielectric constants of the layers. In the second step, a design is presented of a double slot antenna that matches the CPW characteristic impedance and gives good overall performance. The design is presently being implemented and measurements will soon be available.

Pasqualini, Davide↗
NASA NTRS1980

Unity power factor converter

A unity power factor converter capable of effecting either inversion (dc-to-dc) or rectification (ac-to-dc), and capable of providing bilateral power control from a DC source (or load) through an AC transmission line to a DC load (or source) for power flow in either direction, is comprised of comparators for comparing the AC current i with an AC signal i.sub.ref (or its phase inversion) derived from the AC ports to generate control signals to operate a switch control circuit for high speed switching to shape the AC current waveform to a sine waveform, and synchronize it in phase and frequency with the AC voltage at the AC ports, by selectively switching the connections to a series inductor as required to increase or decrease the current i.

Wester, Gene W.↗