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At least 235 records · Page 13

Dopant diffused Si surface passivation by H 2 S gas reaction and quinhydrone-methanol treatment

Phosphorus (n + ) and boron (p + ) diffused n-type textured Cz Si wafers are passivated by two different methods: gas phase H 2 S reaction and quinhydrone-methanol (QH-MeOH) solution. The dopant diffused surface passivation quality, quantified by saturation current density (J 0 ), strongly depends on the diffusion type and the passivation method. H 2 S reaction at 550ºC passivates n + diffused surface as good as state-of-the-art Si oxide/silicon nitride stack (SiO 2 /SiN X ), while QH-MeOH passivates p + diffused surface to the same level as state-of-the-art atomic layer deposited aluminum oxide / silicon nitride stack (Al 2 O 3 /SiN X ).

Das, Ujjwal↗

Pulsed electromagnetic gas accelleration

Direct measurement with thermocouples of the power deposited in the anode of a multi-megawatt magnetoplasmadynamic discharge has shown the fractional anode power to decrease from 50% at 200 kW to 10% at 20 MW. Using local measurements of current density, electric potential, and electron temperature, the traditional model for heat conduction to the anode is found to be inadequate. Other experiments in which the voltage-current characteristics and exhaust velocities of MPD arcs using Plexiglas and boron nitride chamber insulators and various mass injection configurations show that ablation can affect nominal accelerator operation in several distinct ways. The incorporation of a hollow cathode in a 7 kA plasma discharge has shown that a stable current attachment can be realized in the cavity without the aid of cathode heaters, keeper electrodes, or emissive coatings.

Jahn, R. G.↗

SiC Composite Turbine Vanes

Turbine inlet guide vanes have been fabricated from composites of silicon carbide fibers in silicon carbide matrices. A unique design for a cloth made from SiC fibers makes it possible to realize the geometric features necessary to form these vanes in the same airfoil shapes as those of prior metal vanes. The fiber component of each of these vanes was made from SiC-fiber cloth coated with boron nitride. The matrix was formed by chemical-vapor infiltration with SiC, then slurry-casting of SiC, followed by melt infiltration with silicon. These SiC/SiC vanes were found to be capable of withstanding temperatures 400 F (222 C) greater than those that can be withstood by nickel-base-superalloy turbine airfoils now in common use in gas turbine engines. The higher temperature capability of SiC/SiC parts is expected to make it possible to use them with significantly less cooling than is used for metallic parts, thereby enabling engines to operate more efficiently while emitting smaller amounts of NOx and CO. The SiC/SiC composite vanes were fabricated in two different configurations. Each vane of one of the configurations has two internal cavities formed by a web between the suction and the pressure sides of the vane. Each vane of the other configuration has no web (see Figure 1). It is difficult to fabricate components having small radii, like those of the trailing edges of these vanes, by use of stiff stoichiometric SiC fibers currently preferred for SiC/SiC composites. To satisfy the severe geometric and structural requirements for these vanes, the aforementioned unique cloth design, denoted by the term Y-cloth, was conceived (see Figure 2). In the regions away from the trailing edge, the Y-cloth features a fiber architecture that had been well characterized and successfully demonstrated in combustor liners. To form a sharp trailing edge (having a radius of 0.3 mm), the cloth was split into two planes during the weaving process. The fiber tows forming the trailing-edge section were interlocked, thereby enhancing through-thickness strength of the resulting composite material. For vanes of the webless configuration, each made from a layup of six plies of Ycloth, the length of each Y-cloth layer was cut so that the two strips corresponding to the aforementioned two planes would wrap around the perimeter of a graphite vane preform tool with a 10-mm overlap. The overlap was used to join the two strips in a fringe splice. To make the external sixth ply, a standard woven cloth was cut to the required final length and a fringe splice joined the two ends of the cloth at the trailing edge. The cloth was then prepregged. The entire assembly was then placed into an aluminum compaction tool designed to form the outer net shape of the vane. After the prepreg material was allowed to dry, the preform was removed from the aluminum tooling and placed into an external graphite tool before being shipped to a vendor for matrix infiltration. To make the SiC fiber preform for a vane having an internal web, a slightly different initial approach was followed. Each of two sections forming the internal cavities (and ultimately the web) was created by first slipping two concentric layers of a two-dimensional, 2-by-2, 45 - braided tube around a net-shape graphite mandrel. The tubes on both mandrels were prepregged and allowed to dry. The resulting two subassemblies were put together, then four additional plies were wrapped around them in the same fashion as that described above for the six plies of the vaneless configuration. The consolidation of the SiC fiber preforms into SiC/SiC composite parts was performed by commercial vendors using their standard processes. The capability of two of the webless SiC/SiC turbine vanes was demonstrated in tests in a turbine environment. The tests included 50 hours of steady-state operation and 102 two-minute thermal cycles. A surface temperature of 1,320 C was reached during the tests.

Calomino, Anthony M.↗

Irradiation of three T-111 clad uranium nitride fuel pins for 8070 hours at 990 C (1815 F)

The design and successful operation of three tantalum alloy (Ta-8W-2Hf) clad uranium mononitride (UN) fuel pins irradiated for 8070 hr at 990 C (1815 F) is described. Two pin diameters having measured burnups of 0.47 and 0.90 uranium atom percent were tested. No clad failures or swelling was detected; however, postirradiation clad samples tested failed with 1 percent strain. The fuel density decrease was 2 percent, and the fission gas release was less than 0.05 percent. Isotropic fuel swelling, which averaged about 0.5 percent, was less than fuel pin assembly clearances. Thus the clad was not strained. Thermocouples with a modified hot zone operated at average temperatures to 1100 C (2012 F) without failure. Factors that influence the ability to maintain uniform clad temperature as well as the results of the heat transfer calculations are discussed.

Slaby, J. G.↗

Photo-Reactive Amine-Based Direct Air Capture and Conversion of CO2

This study presents a novel photochemical approach to direct air capture (DAC) and CO2 conversion, utilizing a ruthenium-modified mesoporous TiO2 composite infused with linear polyethyleneimine (L-PEI) and enhanced by light absorbing and earth abundant titanium nitride (TiN). This light-activated system operates at ambient pressure and addresses long-standing challenges in conventional amine-based thermal reactive carbon capture (RCC), including amine degradation and CO2 slip. Our findings demonstrate that L-PEI effectively stabilizes CO2 adsorption and facilitates high-yield methanation over 50 cycles with a non-flammable forming gas mixture (approximately 5% H2). Comparatively, composites incorporating small-molecule amines exhibited poor stability under illumination, while highly mobilie branched PEI (B-PEI) formulations suffered from significant catalyst deactivation. A technoeconomic analysis suggests that methane synthesis via this platform could be achieved at costs below $5/kg under current electrocatalytic hydrogen pricing. These findings highlight the potential of this approach to enhance energy security by enabling decentralized, scalable fuel production from atmospheric CO2.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Effect of HIPing on the effective thermal conductivity/diffusivity and the interfacial thermal conductance of uniaxial SiC fibre-reinforced RBSN

Hot isostatic pressing (HIPing) was found to increase the thermal diffusivity/conductivity of uniaxial silicon carbide fiber-reinforced reaction-bonded silicon nitride (RBSN) matrix composites, as the result of the densification of the matrix, the increase in the grain size of the silicon carbide and the improved thermal contact between the fibers and the matrix. Transverse to the fiber direction the thermal diffusivity/conductivity was found to be a function of the surrounding gaseous atmosphere due to the access of the gas phase to the fiber-matrix interface, which was facilitated by the existence of an interfacial gap due to the thermal expansion mismatch between the fibers and the matrix. The interfacial conductance was found to exhibit a strong positive temperature dependence as the result of the closure of the interfacial gap with increasing temperature.

Bhatt, H.↗

Detached Bridgman Growth of Germanium and Germanium-Silicon Alloy Crystals

Earth based experiments on the science of detached crystal growth are being conducted on germanium and germanium-silicon alloys (2at% Si average composition) in preparation for a series of experiments aboard the International Space Station (ISS) to differentiate among proposed mechanisms contributing to detachment. Sessile drop measurements were first carried out for a large number of substrates made of potential ampoule materials to determine the contact angles and the surface tension as a function of temperature and composition. The process atmosphere and duration of the experiment (for some cases) were also found to have significant influence on the wetting angle. Growth experiments have used pyrolytic boron nitride (pBN) and fused silica ampoules with the majority of the detached results occurring predictably in the pBN. The contact angles were 173 deg (Ge) and 165 deg (GeSi) for pBN. For fused silica, the contact angle decreases to an equilibrium value with duration of measurement ranging from 150 to 117 deg (Ge), 129 to 100 deg (GeSi). Forming gas (Ar + 2% H2) and vacuum have been used in the growth ampoules. With gas in the ampoule, a variation of the temperature profile during growth has been used to control the pressure difference between the top of the melt and the volume below the melt caused by detachment of the growing crystal. The stability of detachment has been modeled and substantial insight has been gained into the reasons that detachment has most often been observed in reduced gravity but nonetheless has occurred randomly even there. An empirical model for the conditions necessary to achieve sufficient stability to maintain detached growth for extended periods has been developed and will be presented. Methods for determining the nature and extent of detachment include profilometry and optical and electron microscopy. This surface study is the subject of another presentation at this Congress. Results in this presentation will show that we have established the effects of different ampoule materials, temperature profiles, pressure differences, and silicon concentrations and that samples that are nearly completely detached can be grown repeatedly.

Szofran, F. R.↗

Growth of Hexagonal Boron Nitride from Molten Nickel Solutions: A Reactive Molecular Dynamics Study

Metal flux methods are excellent for synthesizing high-quality hexagonal boron nitride (hBN) crystals, but the atomic mechanisms of hBN nucleation and growth in these systems are poorly understood and difficult to probe experimentally. Here, we harness classical reactive molecular dynamics (ReaxFF) to unravel the mechanisms of hBN synthesis from liquid nickel solvent over time scales up to 30 ns. These simulations mimic experimental conditions by including relatively large liquid nickel slabs containing dissolved boron and a molecular nitrogen gas phase. Overall, the reaction takes place almost exclusively on the surface of the liquid nickel, owing to the low solubility of nitrogen in bulk nickel and the intermediate species’ preference for the metal–gas interface. The formation of hBN invariably begins by reaction of dinitrogen with nickel-solvated boron atoms at the surface, forming intermediate N–N–B species, which typically evolve into B–N–B units through a short-lived intermediate where a single nitrogen atom is coordinated by one nitrogen and two boron atoms. The resulting B–N–B units, in turn, coalesce with growing hBN nuclei and carry nitrogen between hBN nanocrystals in an Ostwald ripening process. The amount of hBN produced on the tens of nanosecond time scale depends critically on the boron concentration, while having a much weaker dependence on the N 2 pressure for the regime considered (N 2 pressures of 2.5–10 MPa, Ni–B solutions with 6–12% boron by atom fraction). The highest rate of hBN formation occurs at the lowest temperature considered (1750 K, just above the melting point of nickel), while no hBN sheets are formed at 2000 K or above. An analysis of the transition pathways for nitrogen atoms shows that the final step, incorporation of small B–N motifs into larger hBN sheets, is the rate-limiting step in the regimes considered. While raising the temperature from 1750 to 2000 K has little effect on the formation of intermediates (N–N–B, B–N–B, etc.), the lack of large hBN sheets at temperatures >1900 K is explained by decreased probability of the final step and increased probability of breakup of hBN into B–N motifs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Ultimate Suppression of Thermal Transport in Amorphous Silicon Nitride by Phononic Nanostructure.

Engineering the thermal conductivity of amorphous materials is highly essential for the thermal management of future electronic devices. Here, we demonstrate the impact of ultrafine nanostructuring on the thermal conductivity reduction of amorphous silicon nitride (a-Si3N4) thin films, in which the thermal transport is inherently impeded by the atomic disorders. Ultrafine nanostructuring with feature sizes below 20 nm allows us to fully suppress contribution of the propagating vibrational modes (propagons), leaving only the diffusive vibrational modes (diffusons) to contribute to thermal transport in a-Si3N4. A combination of the phonon-gas kinetics model and the Allen-Feldmann theory reproduced the measured results without any fitting parameters. The thermal conductivity reduction was explained as extremely strong diffusive boundary scattering of both propagons and diffusIons. These findings give rise to substantial tunability of thermal conductivity of amorphous materials, which enables us to provide better thermal solutions in microelectronic devices.

Tambo, Naoki↗

Boron nitride nanotube precursor formation during high-temperature synthesis: kinetic and thermodynamic modelling

In this work, we performed integrated modelling of the chemical pathways of formation for boron nitride nanotube (BNNT) precursors during high-temperature synthesis in a B/N 2 mixture. Integrated modelling includes quantum chemistry, Quantum–classical molecular dynamics, thermodynamic modelling, and kinetic approaches. We demonstrate that BN compounds are formed via the interaction of molecular nitrogen with small boron clusters, rather than through interactions with less reactive liquid boron. (This process can also be described as N 2 molecule fixation.) Liquid boron evaporates to produce these boron clusters (B m with m ≤ 5), which are subsequently converted into B m N n chains. The production of such chains is crucial to the growth of BNNTs because these chains form the building blocks of bigger and longer BN chains and rings, which are in turn the building blocks of fullborenes and BNNTs. Additionally, kinetic modelling revealed that B 4 N 4 and B 5 N 4 species in particular play a major role in the N 2 molecule fixation process. Furthermore, the formation of these species via reactions with B 4 and B 5 clusters is not adequately described under the assumption of thermodynamic equilibrium, as is demonstrated in our kinetic modelling. Thus, the accumulation of both B 4 N 4 and B 5 N 4 depends on the background gas pressure and the gas cooling rate. Long BN chains and rings, which are precursors of the fullborene and BNNT growth, form via self-assembly of components B 4 N 4 and B 5 N 4 . Our modelling results—particularly the increased densities of B 4 N 4 and B 5 N 4 species at higher gas pressures—explain the experimentally observed effect of gas pressure on the yield of high-quality BNNTs. The catalytic role of hydrogen was also studied; it is shown that HBNH molecules can be the main precursor of BNNT synthesis in the presence of hydrogen.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

Freeman, Jon C.↗

The effect of processing conditions on the GaAs/plasma-grown insulator interface

The effect of processing conditions on the interface state density was evaluated from C-V measurements on metal-oxide-semiconductor capacitors. The optimum processing conditions for the minimum surface state density was found to be related to the postoxidation annealing temperature and time, and was independent of chemical treatments prior to oxidation. Annealing at the optimum condition (i.e., at 350 C for 1 h in either nitrogen or hydrogen gas, with or without an aluminum pattern on the oxide) reduces the fast surface state density by about one order of magnitude. By using a nitrogen/oxygen plasma, the static dielectric constant of the oxide decreased as the N/O ratio was increased, and nitrogen was incorporated into the oxide. In addition, the fast surface state density was reduced as a result of this nitridation process.

Hshieh, F. I.↗

Post-irradiation examination of low burnup U 3 Si 5 and UN-U 3 Si 5 composite fuels

Here this work presents post-irradiation examination data on UN-U 3 Si 5 and U 3 Si 5 fuels at low burnup (i.e., <10–15 GWd/tHM) with Kanthal AF® cladding. The results suggest good irradiation performance for both the silicide and nitride-silicide composite pellets. Optical microscopy revealed that the pellet-cladding gap is still open, and limited axial cracking was observed only in UN-U 3 Si 5 pellets. Microcracking was isolated to the U 3 Si 5 phase in all cases and was observed in pre-irradiation and depleted pellets, indicating that it was not irradiation induced. The fission gas release was minimal for the calculated fission density achieved (2.6 – 3.15 × 10 20 fiss/cm 3 ). No fission gas bubbles were observed in the optical metallography. These results suggest acceptable swelling and fission gas behavior for both the single phase and composite compositions.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Development of silicon nitride rotors for the ATTAP program at Garrett Ceramic Components

The development and fabrication of reliable high temperature-high strength silicon nitride rotors by Garrett Ceramic Components (GCC) for the Advanced Turbine Technology Applications Project (ATTAP) is discussed. GCC's progress will be presented, including mechanical properties characterization, in-process monitoring development, and extensive NDE analysis. The current status of material, process, and part properties of the rotors being developed will be compared to properties required for implementation and successful operation of advanced gas turbine engines at 2500 F.

Busovne, B. J., Jr.↗

100-kW class applied-field MPD thruster component wear

Component erosion and material deposition sites were identified and analyzed during tests of various configurations of 100 kW class, applied-field, water-cooled magnetoplasmadynamic (MPD) thrusters. Severe erosion of the cathode and the boron nitride insulator was observed for the first series of tests, which was significantly decreased by reducing the levels of propellant contamination. Severe erosion of the copper anode resulting from sputtering by the propellant was also observed. This is the first observation of this phenomenon in MPD thrusters. The anode erosion indicates that development of long life MPD thrusters requires the use of light gas propellants such as hydrogen, deuterium, or lithium.

Mantenieks, Maris A.↗

Investigation of Interlayer Dielectric in BaTiO 3 /III–Nitride Transistors

In this paper, the impact of varying the thickness of the Al 2 O 3 interlayer dielectric on the electrical characteristics of BaTiO 3 /III-nitride transistors is investigated. In the findings, it is revealed that a minimum thickness of 8 nm for the Al 2 O 3 layer is crucial to maintain high device performance and protect against sputtering-induced damage during BaTiO 3 deposition. The fabricated BaTiO 3 /Al 2 O 3 /AlGaN/GaN high electron mobility transistors exhibit exceptional electrical properties, including a maximum current density of 700 mA mm –1 , an on-resistance of 5 Ω mm, an I ON /I OFF ratio of 10 7 , a subthreshold slope of 119 mV dec –1 , and significantly reduced gate leakage current. The devices with the optimal 8 nm Al 2 O 3 thickness demonstrates excellent agreement between theoretical and experimental values for effective mobility, achieving a value of 1188 cm 2 V –1 ·s at a 2D electron gas density of 10 13 cm –2 . Furthermore, in the study, it is confirmed that increasing the Al 2 O 3 thickness also improves the quality of interface charge density, as evidenced by the results obtained from capacitance–voltage measurements. In these findings, the critical role of controlling the Al 2 O 3 thickness in optimizing the electrical characteristics and overall performance of BaTiO 3 /III-nitride transistors are highlighted.

42 ENGINEERING↗

Operando XPS for Plasma Process Monitoring: A Case Study on the Hydrogenation of Copper Oxide Confined under h-BN

Here, we demonstrate that ambient pressure x-ray photoelectron spectroscopy (APXPS) can be used for in situ studies of dynamic changes in surface chemistry in a plasma environment. This opens a new and vast application space for XPS and greatly complements modern spectroscopy techniques to probe plasma-solid/liquid interactions relevant to process monitoring in the semiconductor industry, bio-medical plasma applications and plasma remediation technologies. Hexagonal boron nitride (h-BN) grown on Cu was used in this study as a well-defined model system for plasma process monitoring and because of its unique chemical, optical and electrical properties that make it a prospective material for advanced electronics. To better understand the stability and surface chemistry of h-BN during plasma assisted processing, we track in real time the plasma-induced chemical state changes of B, N and the underlying Cu substrate using APXPS equipped with an AC discharge plasma source operating at 13 Pa. Residual gas analysis (RGA) mass-spectra were concurrently collected during plasma-XPS to track reaction products formed during plasma exposure. A clear reduction of Cu x O is seen, while an h-BN layer remains intact, suggesting hydrogen radical (H • ) species can attack the exposed and h-BN covered Cu oxide patches and partially reduce the underlying substrate without significantly damaging the overlaying h-BN, which is of practical importance for development of h-BN encapsulated devices and interfaces. In addition to demonstration of plasma-XPS capabilities we discuss the observed challenges (e.g., parasitic plasma-chamber walls reactions and charging effects) and propose potential solutions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Comparison of ablators for the polar direct drive exploding pusher platform

In this work, we examine the performance of pure boron, boron carbide, high density carbon, and boron nitride ablators in the polar direct drive exploding pusher (PDXP) platform. The platform uses the polar direct drive configuration at the National Ignition Facility to drive high ion temperatures in a room temperature capsule and has potential applications for plasma physics studies and as a neutron source. The higher tensile strength of these materials compared to plastic enables a thinner ablator to support higher gas pressures, which could help optimize its performance for plasma physics experiments, while ablators containing boron enable the possibility of collecting additional data to constrain models of the platform. Applying recently developed and experimentally validated equation of state models for the boron materials, we examine the performance of these materials as ablators in 2D simulations, with particular focus on changes to the ablator and gas areal density, as well as the predicted symmetry of the inherently 2D implosion.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗