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At least 235 records · Page 13

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NASA NTRS1987

A photometric and spectroscopic comparison of the cataclysmic variables on the 2 sides of the period gap and at a specific orbital period

New and previously existing photometric colors and spectroscopic H and He line strengths are used to compare CV disk systems below the period gap (P=80-130 min) with those directly above (P=190-240 min). Significant differences are found in the mean U-B, V-J colors and in the H-beta equivalent widths on the two sides of the gap. A detailed comparison from UV-IR of 3 high inclination novalike systems with periods near 3.3 hr (PG1012-029, PG1030 + 590 and V1315 Aql) shows similar continuum distributions (and implied mass accretion rates) but large differences in high excitation lines (He III 640 A and 4686 A; C IV 1550 A).

Szkody, P.↗

NASA NTRS1987

Energy-gap spectroscopy of superconductors using a tunneling microscope

A unique scanning tunneling microscope (STM) system has been developed for spectroscopy of the superconducting energy gap. High-resolution control of tunnel current and voltage allows for measurement of superconducting properties at tunnel resistance levels 100-1000 greater than that achieved in prior work. The previously used STM methods for superconductor spectroscopy are compared to those developed for the work reported here. Superconducting energy-gap spectra are reported for three superconductors, Pb, PbBi, and NbN, over a range of tunnel resistance. The measured spectra are compared directly to theory.

Le Duc, H. G.↗

NASA NTRS1987

Modeling gap probability in discontinuous vegetation canopies

In the present model for the gap probability of a discontinuous vegetation canopy, the assumption of a negative exponential attenuation within individual plant canopies will yield a problem involving the distribution distances within canopies through which a ray will pass. If, however, the canopies intersect and/or overlap, so that foliage density remains constant within the overlap area, the problem can be approached with two types of approximations. Attention is presently given to the case of a comparison of modeled gap probabilities with those observed for a stand of Maryland pine, which shows good agreement for zenith angles of illumination up to about 45 deg.

Li, Xiaowen↗

NASA NTRS1988

An investigation of the optical constants and band gap of chromium disilicide

Optical properties of polycrystalline thin films of CrSi2 grown by the diffusion couple method on silicon substrates were investigated. An analysis of the energy dependence of the absorption coefficient indicates that the material is an indirect forbidden gap semiconductor with a band-gap value of slightly less than 0.35 eV. This result was confirmed by measurements of the temperature dependence of the intrinsic conductivity. The value of the bandgap corresponds well to an important window of transparency in the earth's atmosphere (3-5 microns), which makes the material of potential interest for IR detector applications.

Bost, M. C.↗

NASA NTRS1987

Effect of high temperature annealing on the thermoelectric properties of GaP doped SiGe

Silicon-germanium alloys doped with GaP are used for thermoelectric energy conversion in the temperature range 300-1000 C. The conversion efficiency depends on Z = S-squared/rho lambda, a material's parameter (the figure of merit), where S is the Seebeck coefficient, rho is the electrical resistivity and lambda is the thermal conductivity. The annealing of several samples in the temperature range of 1100-1300 C resulted in the power factor P (= S-squared/rho) increasing with increased annealing temperature. This increase in P was due to a decrease in rho which was not completely offset by a drop in S-squared suggesting that other changes besides that in the carrier concentration took place. SEM and EDX analysis of the samples indicated the formation of a Ga-P-Ge rich phase as a result of the annealing. It is speculated that this phase is associated with the improved properties. Several reasons which could account for the improvement in the power factor of annealed GaP doped SiGe are given.

Vandersande, Jan W.↗

NASA NTRS1989

High speed corner and gap-seal computations using an LU-SGS scheme

The hybrid Lower-Upper Symmetric Gauss-Seidel (LU-SGS) algorithm was added to a widely used series of 2D/3D Euler/Navier-Stokes solvers and was demonstrated for a particular class of high-speed flows. A limited study was conducted to compare the hybrid LU-SGS for approximate Newton iteration and diagonalized Beam-Warming (DBW) schemes on a work and convergence history basis. The hybrid LU-SGS algorithm is more efficient and easier to implement than the DBW scheme originally present in the code for the cases considered. The code was validated for the hypersonic flow through two mutually perpendicular flat plates and then used to investigate the flow field in and around a simplified scramjet module gap seal configuration. Due to the similarities, the gap seal flow was compared to hypersonic corner flow at the same freestream conditions and Reynolds number.

Coirier, William J.↗

NASA NTRS1989

High speed corner and gap-seal computations using an LU-SGS scheme

Coirier, William J.↗

NASA NTRS1991

Improved Gas-Gap Heat Switch

Four modifications in design of gas-gap heat switch decrease residual thermal conductance in "off" state, making it act more nearly like true on/off switch. New version differs in surface finish of fins, thickness of stainless steel supporting cylinder, size of gaps at ends of fins, and plumbing for gas. Switches have no moving parts and offer reliability and long operating life.

Chan, Chung K.↗

NASA NTRS1991

Reversible Chemisorption Gas-Gap Thermal Switch

Gas/sorbent combinations provide means to turn heat-conduction paths on and off. Single-stage gas-gap thermal switch based on reversible chemisorption of hydrogen gas by ZrNiH. Two-stage gas-gap thermal switch based on reversible desorption of O2 from MnO2 in first stage, followed by absorption in Cu on zeolite in second stage. Requires relatively low power. Used in sorption refrigeration systems designed to operate for long times without maintenance.

Jones, Jack A.↗

NASA NTRS1992

Thermally Activated Retainers For Insertion In Gaps

Mechanical retainers of new type for use with gap filler easy to install and to attach themselves securely. Concept based on shape-memory properties of metal alloy Nitinol, alloy of nickel and titanium. Retainers conceived for use with Space Shuttle insulating tiles but used on other assemblies of blocks or tiles configured similarly. Tabs bent outward made flush by cooling below memory transition temperature. After insertion in gap and reheating, tabs spring outward.

Grimaldi, Margaret E.↗

NASA NTRS1993

Nova V2214 Ophiuchi 1988 - A magnetic nova inside the period gap

The discovery of a coherent photometric modulation in Nova Oph 1988 with period 0.117515 +/- 0.000002 d, which is associated with the orbital period of the underlying binary, is reported. On the basis of photometric observations, it is concluded that Nova V2214 Oph 1988 is a magnetic nova with an orbital period inside the period gap. The inclusion of this system in the statistics of novae suggests that there is no period gap for novae and that there is a clear correlation between the occurrence of novae with short orbital periods and the presence of magnetic white dwarfs. It is suggested that funneling of the accretion flow onto the magnetic poles favors the conditions for a thermonuclear runaway, increasing the frequency of eruptions for magnetic systems.

Baptista, R.↗

NASA NTRS1991

Optical position measurement for a Large Gap Magnetic Suspension System

This paper describes the design of an optical position measurement system which is being built as part of the NASA Langley Large Gap Magnetic Suspension System (LGMSS). The LGMSS is a five degree-of-freedom, large-gap magnetic suspension system which is being built for Langley Research Center as part of the Advanced Controls Test Facility (ACTF). The LGMSS consists of a planar array of electromagnets which levitate and position a cylindrically shaped model containing a permanent magnet core. The optical position measurement system provides information on the location and orientation of the model to the LGMSS control system to stabilize levitation of the model.

Welch, Sharon S.↗

NASA NTRS1991

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

In this paper, we report the epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube OMCVD. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology has been achieved for x less than or equals to 0.05. Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10 exp 18 to 2 x 10 exp 17/cu cm. Absorption measurements indicate that the band tailing in the absorption spectra of the alloy has been shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material.

Xing, G. C.↗

NASA NTRS1992

Gap probability - Measurements and models of a pecan orchard

Measurements and models are compared for gap probability in a pecan orchard. Measurements are based on panoramic photographs of 50* by 135 view angle made under the canopy looking upwards at regular positions along transects between orchard trees. The gap probability model is driven by geometric parameters at two levels-crown and leaf. Crown level parameters include the shape of the crown envelope and spacing of crowns; leaf level parameters include leaf size and shape, leaf area index, and leaf angle, all as functions of canopy position.

Strahler, Alan H.↗

NASA NTRS1989

Current analytical gaps: Future needs for large space systems

Viewgraphs on current analytical gaps for future needs for large space systems are presented. Topics covered include: future spacecraft; common control objectives; accuracy requirements; increasing complexity; promising approaches; and analytical gaps.

Taylor, Larry↗

NASA NTRS1929

Wind Tunnel Pressure Distribution Tests on a Series of Biplane Wing Models. Part III Effects of Charges in Various Combinations of Stagger, Gap, Sweepback, and Decalage

This preliminary report furnishes information on the changes in the forces on each wing of a biplane cellule for various combinations of stagger and gap, stagger and sweepback, stagger and decalage, and gap and decalage. The data were obtained from pressure distribution tests made in the atmospheric wind tunnel of the Langley Memorial Aeronautical Laboratory. Since each test was carried up to 90deg angle of attack, the results may be used in the study of stalled flight and of spinning as well as in the structural design of biplane wings.

Knight, Montgomery↗

NASA NTRS1938

Wind-tunnel tests of a Clark Y wing having split flaps with gaps

Tests were made of the Clark Y wing having split flaps with a gap between the flap and the lower surface of the wing. Lift, drag, and pitching moments were measured for the wing with three different sizes of flap. It was found that any gap between the flap and the wing reduced the lift, the drag, and the pitching moments, but that the center-of-pressure movement and the ratio of lift to drag were little affected.

Wenzinger, Carl J↗

NASA NTRS1993

Organometallic chemical vapor deposition and characterization of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates

The epitaxial growth of ZnGe(1-x)Si(x)P2-Ge alloys on GaP substrates by open tube organometallic chemical vapor deposition (OMCVD) is reported. The chemical composition of the alloys characterized by energy dispersive X-ray spectroscopy shows that alloys with x up to 0.13 can be deposited on (001) GaP. Epitaxial growth with mirror smooth surface morphology was achieved for x less than or equal to 0.05. Transmission electron microscopy (TEM) micrographs of these alloys show specular epitaxy and the absence of microstructural defects indicating a defect density of less than 10(exp 7) cm(sup -2). Selected area electron diffraction pattern of the alloy shows that the epitaxial layer crystallizes in the chalcopyrite structure with relatively weak superlattice reflections indicating certain degree of randomness in the cation sublattice. Hall measurements show that the alloys are p-type, like the unalloyed films; the carrier concentration, however, dropped about 10 times from 2 x 10(exp 18) to 2 x 10(exp 17) cm(sup -3). Absorption measurements indicate that the band tailing in the absorption spectra of the alloy was shifted about 0.04 eV towards shorter wavelength as compared to the unalloyed material. Diodes fabricated from the n(+)-GaP/p-ZnSiP2-ZnGeP2-Ge heterostructure at x = 0.05 have a reverse break-down voltage of -10.8 V and a reverse saturation current density of approximately 6 x 10(exp -8) A/sq cm.

Xing, G. C.↗