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At least 235 records · Page 13

Localized UV emitters on the surface of β-Ga 2 O 3

Abstract Monoclinic gallium oxide (β-Ga 2 O 3 ) is attracting intense focus as a material for power electronics, thanks to its ultra-wide bandgap (4.5–4.8 eV) and ability to be easily doped n -type. Because the holes self-trap, the band-edge luminescence is weak; hence, β-Ga 2 O 3 has not been regarded as a promising material for light emission. In this work, optical and structural imaging methods revealed the presence of localized surface defects that emit in the near-UV (3.27 eV, 380 nm) when excited by sub-bandgap light. The PL emission of these centers is extremely bright—50 times brighter than that of single-crystal ZnO, a direct-gap semiconductor that has been touted as an active material for UV devices.

36 MATERIALS SCIENCE↗

Negative thermal quenching of photoluminescence in a copper–organic framework emitter

Negative thermal quenching (NTQ), an abnormal phenomenon that the intensity of photoluminescence (PL) increases with increasing temperature, has essentially been restricted to either bulk semiconductors or very low temperatures. Here, we report a delayed fluorescence copper–organic framework exhibiting negative thermal quenching (NTQ) of photoluminescence, which is driven by the fluctuation between the localized and delocalized form of its imidazole ligand. The process is completely reversible on cooling/heating cycles. This study opens a new avenue to explore the electronically switchable NTQ effect in coordination networks and further to develop the NTQ-based light-emitting diodes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Carbazole-substituted benzobisoxazoles: near-UV fluorescent emitters and ambipolar hosts for organic light-emitting diodes

The design of organic light emitting diode (OLED) materials with the potential for exhibiting thermally-activated delayed fluorescence (TADF) is reported. Using computational methods (DFT/TD-DFT) as a guiding tool, six materials with a benzobisoxazole (BBO) core and donor–acceptor–donor architectures were designed by changing the conjugation position of carbazole-substituted phenyl substituents and the type of BBO isomer (cis- vs. trans-). Experimental steady-state and transient absorption spectroscopic techniques were utilized to probe the TADF activity of these molecules. Each material was then used in host–guest OLED devices as either near-UV dopants or host with low singlet-triplet energy differences. The electroluminescent properties show that when used as dopants these materials provide near-UV emission (CIE y < 0.06 and CIE x = 0.16), whereas when used as hosts, these materials show reduced operating voltages and increased performance efficiencies when compared to commercial materials.

36 MATERIALS SCIENCE↗

Role of shell composition and morphology in achieving single-emitter photostability for green-emitting “giant” quantum dots

The use of the varied chemical reactivity of precursors to drive the production of a desired nanocrystal architecture has become a common method to grow thick-shell graded alloy quantum dots (QDs) with robust optical properties. Conclusions on their behavior assume the ideal chemical gradation and uniform particle composition. In this work, advanced analytical electron microscopy (high-resolution scanning transmission electron microscopy coupled with energy dispersive spectroscopy) is used to confirm the nature and extent of compositional gradation and these data are compared with performance behavior obtained from single-nanocrystal spectroscopy to elucidate structure, chemical-composition, and optical-property correlations. In particular, the evolution of the chemical structure and single-nanocrystal luminescence was determined for a time-series of graded-alloy “CdZnSSe/ZnS” core/shell QDs prepared in a single-pot reaction. In a separate step, thick (~6 monolayers) to giant (>14 monolayers) shells of ZnS were added to the alloyed QDs via a successive ionic layer adsorption and reaction (SILAR) process, and the impact of this shell on the optical performance was also assessed. By determining the degree of alloying for each component element on a per-particle basis, we observe that the actual product from the single-pot reaction is less “graded” in Cd and more so in Se than anticipated, with Se extending throughout the structure. The latter suggests much slower Se reaction kinetics than expected or an ability of Se to diffuse away from the initially nucleated core. It was also found that the subsequent growth of thick phase-pure ZnS shells by the SILAR method was required to significantly reduce blinking and photobleaching. However, correlated single-nanocrystal optical characterization and electron microscopy further revealed that these beneficial properties are only achieved if the thick ZnS shell is complete and without large lattice discontinuities. Thus, we identify the necessary structural design features that are required for ideal light emission properties in these green-visible emitting QDs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

A cryogenically cooled 200 kV DC photoemission electron gun for ultralow emittance photocathodes

Novel photocathode materials like ordered surfaces of single crystal metals, epitaxially grown high quantum efficiency thin films, and topologically non-trivial materials with dirac cones show great promise for generating brighter electron beams for various accelerator and ultrafast electron scattering applications. Despite several materials being identified as brighter photocathodes, none of them have been tested in electron guns to extract electron beams due to technical and logistical challenges. In this paper, we present the design and commissioning of a cryocooled 200 kV DC electron gun that is capable of testing a wide variety of novel photocathode materials over a broad range of temperatures from 298 to 35 K for bright electron beam generation. This gun is designed to enable easy transfer of the photocathode to various standard ultra-high-vacuum surface diagnostics and preparation techniques, allowing a full characterization of the dependence of beam brightness on the photocathode material and surface properties. We demonstrate the development of such a high-voltage, high-gradient gun using materials and equipment that are easily available in any standard university lab, making the development of such 200 kV electron guns more accessible.

Instruments & Instrumentation↗

Design of AlGaN-Zn(Si,Ge)N2 quantum wells for high-efficiency ultraviolet light emitters

The effect of inserting a nm-scale layer of Zn(Si,Ge)N2 into an AlGaN quantum well structure designed for light emission in the wavelength range from 255 to 305 nm is investigated here. The enhanced confinement of the hole within the quantum well results in an enhancement of the overlap of the hole and electron wave functions, resulting in an enhancement of the radiative recombination rate. In this theoretical calculation, for emission at a 270 nm wavelength, the enhancement in the wavefunction overlap can reach a factor of 7 when compared to an AlGaN quantum well device specifically engineered for optimal emission at the identical wavelength. Increases of almost an order of magnitude in both the peak spontaneous emission intensity and the radiative recombination rate are predicted. The peak emission wavelength can be tuned from 255 to 305 nm by adjusting the width and/or the composition of the inserted layer. The proposed structures provide a route to higher efficiency ultraviolet practical light emitting diodes and lasers.

Physics↗

Excessive charge, beam loading, and impedance collapse thresholds for a velvet emitter

Excess emission has been observed from velvet cathodes with total emission times >150 ns. In this diode experiment, we produce a sub-relativistic electron beam with the ability to consistently change γ from 1.2 to 1.5 and β = 0.5–0.75. Electron emission in this particular diode geometry requires electric fields >40 kV/cm. The current increases at steady rates >0.05 A/ns after the head of the pulse, indicating an expansion of the emission surface and reduction in the effective AK gap. Small transients of excess emission (or arcs) are consistently observed for current pulses exceeding 150 ns. The excess emission results in beam loaded levels ≥10 kV on the diode voltage. The effects described here are compounded as diode voltage is increased. The principal objective of these experiments is to quantify electric field emission thresholds, current ramps, excess emission delays, effective beam loading, and impedance collapse.

43 PARTICLE ACCELERATORS↗

Isolation of individual Er quantum emitters in anatase TiO 2 on Si photonics

Defects and dopant atoms in solid state materials are a promising platform for realizing single photon sources and quantum memories, which are the basic building blocks of quantum repeaters needed for long distance quantum networks. In particular, trivalent erbium (Er 3+ ) is of interest because it couples C-band telecom optical transitions with a spin-based memory platform. In order to produce quantum repeaters at the scale required for quantum networks it is imperative to integrate these necessary building blocks with mature and scalable semiconductor processes. Here, in this work, we demonstrate the optical isolation of single Er 3+ ions in CMOS-compatible titanium dioxide (TiO 2 ) thin films monolithically integrated on a silicon-on-insulator photonics platform. Our results demonstrate an initial step toward the realization of a monolithically integrated and scalable quantum photonics package based on Er 3+ doped thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The role of the dopant in the electronic structure of erbium-doped TiO 2 for quantum emitters

Erbium-doped TiO 2 materials are promising candidates for advancing quantum technologies, necessitating a thorough understanding of their electronic and crystal structures to tailor their properties and enhance coherence times. This study explored epitaxial erbium-doped rutile TiO 2 films deposited on r-sapphire substrates using molecular beam epitaxy. Photoluminescence excitation spectroscopy demonstrated decreasing photoluminescence lifetimes with erbium doping, indicating limited optical coherence times. Lattice distortions associated with Er 3+ were probed by x-ray absorption spectroscopy, indicating that erbium primarily occupies Ti 4+ sites and influences oxygen vacancies. Significant lattice distortions in the higher-order shells and apparent full coordination around erbium suggest that additional defects are likely prevalent in these regions. These findings indicate that defects contribute to limited coherence times by introducing alternative decay pathways, leading to shorter photoluminescence lifetimes.

Crystallographic defects↗

Intrinsic emittance properties of an Fe-doped β-Ga 2 O 3 (010) photocathode: Ultracold electron emission at 300 K and the polaron self-energy

Measurements of the spectral emission properties of an iron-doped a β-Ga 2 O 3 (010) photocathode at 300 K reveal the presence of an ultracold contribution to the total electron beam emission with a 6 meV mean transverse energy (MTE) in the 3.5–4.4 eV photon energy range (282–354 nm). This extreme sub-thermal photoemission signal is consistent with direct emission of electrons photoexcited from the Fe dopant states into the low effective mass and positive electron affinity primary conduction band, and it is superimposed on a stronger signal with a larger MTE associated with an (optical)phonon-mediated momentum-resonant Franck–Condon (FC) emission process from a thermally populated and negative electron affinity upper conduction band. For photon energies above 4.5 eV, a transition from a long to a short transport regime is forced by an absorption depth reduction to below 100 nm and both MTE signals exhibit spectral trends consistent with phonon-mediated FC emission if the polaron formation self-energy is included in the temperature of the initial thermalized photoexcited electron distribution.

Angeloni, Louis A. [University of Illinois, Chicag↗

Outside the Lyman-break box: detecting Lyman continuum emitters at 3.5 < z < 5.1 with CLAUDS

ABSTRACT Identifying non-contaminated sample of high-redshift galaxies with escaping Lyman continuum (LyC) flux is important for understanding the sources and evolution of cosmic reionization. We present CLAUDS (CFHT Large Area u-band deep survey) u-band photometry of the COSMOS field to probe LyC radiation from spectroscopically confirmed galaxies at $z$ ≥ 3.5 and outside the standard Lyman-break galaxy colour-selection expectations. Complementary to the CLAUDS data, we use Subaru multifilter photometry, Hubble Space Telescope (HST) multifilter imaging, and the spectroscopic surveys D10K, VUDS, and 3D-HST. We present a sample of Lyman continuum galaxy (LCG) candidates in the redshift range 3.5 ≲ $z$ ≲ 5.1. Here, we introduce 5 LCG candidates, where two are flagged quality 1 and three quality 2. The estimated $f_{\rm esc}^{\rm abs}$ for quality 1 candidates are in the range $\sim 5 - 73{{\ \rm per\ cent}}$ and $\sim 30 - 93{{\ \rm per\ cent}}$. These estimates are based on our derived parameters from individual galaxies as inputs to a range of BPASS models as well as mean intergalactic medium (IGM) and maximal intergalactic and circumgalactic media (IGM+CGM) transmission. We conclude that our search for LCGs is most likely biased to lines of sight with low H i densities or free from Lyman limit systems. Our two best LCG candidates have EW (Lyα) ≤ 50 Å and we find no correlation or anticorrelation between EW (Lyα), $f_{\rm esc}^{\rm abs}$, and Robs, the ratio of ionizing to non-ionizing observed flux in the measured passbands. Stacking candidates without solid LyC detections (S/N < 3) results in an estimated $f_{\rm esc}^{\rm abs}$ from galaxies not greater than $1{{\ \rm per\ cent}}$.

Meštrić, U.↗

A new constraint on galaxy–halo connections of [O ii ] emitters via HOD modelling with angular clustering and luminosity functions from the Subaru HSC survey

ABSTRACT Establishing a robust connection model between emission-line galaxies (ELGs) and their host dark haloes is of paramount importance in anticipation of upcoming redshift surveys. We propose a novel halo occupation distribution (HOD) framework that incorporates galaxy luminosity, a key observable reflecting ELG star-formation activity, into the galaxy occupation model. This innovation enables prediction of galaxy luminosity functions (LFs) and facilitates joint analyses using both angular correlation functions (ACFs) and LFs. Using physical information from luminosity, our model provides more robust constraints on the ELG–halo connection compared to methods relying solely on ACF and number density constraints. Our model was applied to $\rm [O\, {\small II}]$-emitting galaxies observed at two redshift slices at $z=1.193$ and 1.471 from the Subaru Hyper Suprime-Cam PDR2. Our model effectively reproduces observed ACFs and LFs observed in both redshift slices. Compared to the established Geach et al. HOD model, our approach offers a more nuanced depiction of ELG occupation across halo mass ranges, suggesting a more realistic representation of ELG environments. Our findings suggest that ELGs at $z\sim 1.4$ may evolve into Milky-Way-like galaxies, as their inferred halo masses evolve accordingly based on the extended Press–Schechter formalism, highlighting their role as potential building blocks in galaxy formation scenarios. By incorporating the LF as a constraint linking galaxy luminosity to halo properties, our HOD model provides a more precise understanding of ELG-host halo relationships. Furthermore, this approach facilitates the generation of high-quality ELG mock catalogues for future surveys. As the LF is a fundamental observable, our framework is potentially applicable to diverse galaxy populations, offering a versatile tool for analysing data from next-generation galaxy surveys.

Ishikawa, Shogo (ORCID:0000000221184211)↗