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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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High emittance coatings radiation characteristics investigated for space applications, considering thickness effect on high temperature emittance and space environment effect at moderate temperatures
High-emittance coatings of iron, calcium, and zirconium titanates thermally sprayed on stainless steel, columbium-1 percent zirconium, and beryllium substrates promote and control radiative heat transfer from the metal substrates. Adherence, compatibility and emittance stability at elevated temperature and high vacuum were evaluated.
Infrared radiance measurements from geological materials were studied. These involved laboratory and field spectroscopic measurements, both on the ground and airborne. A proven, feasible system is presented for airborne use over terrains with minimal vegetation. It has been shown that the spectral emittance concepts can be utilized in emittance ratio imagery which depicts the silicate composition of the terrain.
Brightness temperatures have been observed from five hohlraums equally spaced on a diameter of a 0.635 cm thermionic emitter surface. The hohlraums are 0.0381 cm in diameter and are 0.114 cm deep. The surface was mounted in a simulated diminiode geometry and was heated from the backside, according to the design, by electron bombardment. Several temperature observations were made at each hohlraum at four different levels of input power. Within experimental error no measurable temperature gradients across the emitter surface were observed at any input power level.
Description of the technique and discussion of the results of measurements of the total emittance of Apollo 11, 12, and 14 samples of lunar fines. The measurements were performed as a function of temperature upon samples of a density large enough to eliminate any significant density effect on the total emittance.
The thermal radiation properties of Apollo 11 and 12 fines (soils) are reviewed and presented as a function of wavelength, angle of illumination, and bulk density. The spectral directional reflectance is presented for wavelengths from 0.6 to 2 microns and for angles of illumination of 10, 20, 30, 45, and 60 deg. The normal emittance is presented for wavelengths from 2.5 to 14.5 microns. The solar albedo and total normal emittance as a function of temperature were calculated from the spectral values. The solar albedo for Apollo 11 fines is 0.099 whereas for Apollo 12 fines is approximately 0.119 for angles of illumination of 10 deg and a density of 1600 kg cu m.
Methods for infrared radiance measurements from geological materials were studied for airborne use over terrains with minimal vegetation. The tasks of the investigation were: (1) calculation of emittance ratios, (2) comparison of IR spectral emittance data with K-band scatterometer data over Pisgah Crater, and (3) standard infrared spectral file. Published papers reporting the research are included.
A metal/ceramic Marchuk tube was used to measure work functions of oxygen-doped tantalum, to determine applicability of the material to plasma-mode thermionic converters. Oxygen-doped tantalum was shown to increase in work function monotonically with oxygen doping in the range 0.1 to 0.3 atomic percent. Oxygenated test emitters were run at an average temperature of 2165 K and a T/T sub Cs ratio -5.8 to observe the influence of oxygen depletion. Bare work function decreased with outgassing of oxygen. Projections were made based on outgassing kinetics and area/volume ratios to calculate the longevity of oxygen doping in a practical converter. Calculations indicated that the program goal of 10,000 hr could be achieved at 1800 K with an initial oxygen doping of 1 atomic percent and a practical emitter area/volume ratio.
The invention relates to an inverted geometry transistor wherein the emitter is buried within the substrate. The transistor can be fabricated as a part of a monolithic integrated circuit and is particularly suited for use in applications where it is desired to employ low actuating voltages. The transistor may employ the same doping levels in the collector and emitter, so these connections can be reversed.
The possibility is discussed of using Doppler techniques for determining the location of ground based emitters causing radio frequency interference with low orbiting satellites. An error analysis indicates that it is possible to find the emitter location within an error range of 2 n.mi. The parameters which determine the required satellite receiver characteristic are discussed briefly along with the non-real time signal processing which may by used in obtaining the Doppler curve. Finally, the required characteristics of the satellite antenna are analyzed.
Some basic concepts of radiation physics are briefly reviewed to provide an introduction to the radiative properties - including emittance, reflectance, absorptance, and transmittance - their definitions, interrelations, theory and methods of measurement. Analyzed data showing typical characteristics of temperature and wavelength dependence, surface effects and environmental influences on the radiation properties of selected classes of materials are presented. Emphasis is placed on those emittance properties of particular interest to conventional radiation thermometry applications, but sufficient generality on all properties is presented to be useful for new or unusual techniques where a more detailed understanding of the behavior of materials is desirable. Data sources are identified to assist the reader in locating property information. It is the intention of the paper to give the reader a background to become more fully aware of the pitfalls, limitations, but of course, advantages in the use of data from the literature. The paper is written in the form of an abbreviated review fully documenting the more important topics and concepts which can only be treated briefly.
The development of a radiometric technique for determining the spectral and total normal emittance of materials heated to temperatures of 800, 1100, and 1300 K by direct comparison with National Bureau of Standards (NBS) reference specimens is discussed. Emittances are measured over the spectral range of 1 to 15 microns and are statistically compared with NBS reference specimens. Results are included for NBS reference specimens, Rene 41, alundum, zirconia, AISI type 321 stainless steel, nickel 201, and a space-shuttle reusable surface insulation.
A low cost, portable instrument was developed with which emittance can be measured by comparison to a standard. A reflector collects infrared radiation from a heated sample onto a low mass, black detector and the temperature rise of the black detector is measured with a thermocouple and meter. Graphical examples are presented for determination of emittance from measurements made on a sample at any known temperature.
An experimentally based methodology that determines the effective gap shrinkage and lifetime in the emitter of a p-n junction solar cell is described which provides an experimental means for assessing the importance of gap shrinkage relative to that of large recombination rates in the highly doped emitter. The base lifetime is also determined. The methodology pertains to a solar cell after the junction is formed, so that each material parameter determined includes the effects of the processing used in junction fabrication. The methodology consists of strategy and procedures for designing experiments and interpreting data consistently with the physical mechanisms governing device behavior. This careful linking to the device physics uncover the material parameters concealed in the data. To illustrate the procedures, they are applied to an n(+)-p solar cell having substrate resistivity of about 0.1 ohm-cm.
A low cost, portable instrument has been developed with which emittance can be measured by comparison to a standard. A reflector collects infra-red radiation from a heated sample onto a low mass, black detector and the temperature rise of the black detector is measured with a thermocouple and meter. Graphical examples are presented for determination of emittance from measurements made on a sample at any known temperature.
Atmospheric effects were taken into account in a study of the variation of energy reflected and energy emitted from a natural target under several conditions of temperature and emittance. For the study, atmospheric transmittance was represented through use of an empirical midlatitude summer model. Results showed that the ratio of energy emitted to energy reflected from a target is much less than unity at 3.5 microns, equal to unity at 4 microns, and much greater than unity at 4.6 microns (for high temperatures and emittances). These theoretical findings agreed closely with spectroradiometric data on soils.
A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of the open-circuit voltage in silicon solar cells and the common-emitter current gain in bipolar transistors.
Open-circuit voltages as high as 0.645 V (AM0, 25 C) have been obtained by a new process developed for low-resistivity silicon. The process utilizes high-dose phosphorus implantation followed by furnace annealing and simultaneous oxide growth. The effect of the thermally grown oxide is a reduction of surface recombination velocity; the oxide also acts as a moderately efficient antireflection (AR) coating. Boron-doped, float-zone silicon with resistivities from 0.1 to 1.0 (omega)(cm) has been processed according to this sequence; results show that the highest open-circuit voltage is obtained with 0.1(omega)(cm) starting material. The effects of Auger recombination and bandgap narrowing caused by high doping concentrations in the n(+)junction region have been investigated by implanting phosphorus over a wide range of dose levels. The effects of emitter-phosphorus concentrations tailored to optimize electric fields in the emitter have also been investigated.