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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Comparison of 1.5 MeV electron irradiation induced optical absorption of fused commercial silicas and optical transmission of Al2O3, MgF2, BaF2, LiF, and BeO
High energy electron radiation effect on optical transmission of transparent materials for solar cell shields
Empirical correlation of high energy electrons into materials allows predictions of practical ranges (measure of electron penetration) for different elements and alloys.
A standard procedure for the determination of the minority carrier diffusion length by means of a scanning electron microscope (SEM) consists in scanning across an angle-lapped surface of a P-N junction and measuring the resultant short circuit current I sub sc as a function of beam position. A detailed analysis of the I sub sc originating from this configuration is presented. It is found that, for a point source excitation, the I sub sc depends very simply on x, the variable distance between the surface and the junction edge. The expression for the I sub sc of a planar junction device is well known. If d, the constant distance between the plane of the surface of the semiconductor and the junction edge in the expression for the I of a planar junction is merely replaced by x, the variable distance of the corresponding angle-lapped junction, an expression results which is correct to within a small fraction of a percent as long as the angle between the surfaces, 2 theta sub 1, is smaller than 10 deg.
The results of a series of experiments in which flux levels representative of the space electron environment were used are presented and compared to the results of high flux tests. The simulation approach was to partition the space electron spectrum into two parts, those electrons which do not penetrate a material and therefore contribute to charging and those which completely penetrate the material. The nonpenetrating electrons were simulated using 25 keV electrons and the penetrating electrons by 350 keV electrons. The materials included in this investigation were Kapton, optical solar reflectors (OSRs), and a ground test satellite surface potential monitor which contained Kapton, astroquart, OSRs and teflon.
The paper describes a method for embedding, sectioning, and observing two types of extraterrestrial materials, including hydrated interplanetary dust particles (IDPs) and carbonaceous chondrite meteorites. The technique, which produces large thin areas suitable for both high-resolution imaging and thin-film microanalysis, was applied to study the petrology of the IDP Ames-DE C86-11, the Murchison carbonaceous chondrite matrix, and the Allende dark inclusion. The technique makes it possible to maintain delicate interfaces, boundaries, and phase relationships between grains. Because phases are held in place, layer lattice silicates and other minerals with strong preferred orientations can be viewed in any orientation, including the orientation normal to their basal planes.
Under a microscope, atomic oxygen (AO) exposed silicone surfaces are crazed and seen as "islands" separated by numerous crack lines, much analogous to mud-tile cracks. This research characterized and compared the degree of AO degradation of silicones by analyzing optical microscope images of samples exposed to low Earth orbit (LEO) AO as part of the Spacecraft Silicone Experiment. The Spacecraft Silicone Experiment consisted of eight DC 93-500 silicone samples exposed to eight different AO fluence levels (ranged from 1.46 to 8.43 10(exp 21) atoms/sq cm) during two different Materials International Space Station Experiment (MISSE) missions. Image analysis software was used to analyze images taken using a digital camera. To describe the morphological degradation of each AO exposed flight sample, three different parameters were selected and estimated: (1) average area of islands was determined and found to be in the 1000 to 3100 sq mm range; (2) total length of crack lines per unit area of the sample surface were determined and found to be in the range of 27 to 59 mm of crack length per sq mm of sample surface; and (3) the fraction of sample surface area that is occupied by crack lines was determined and found to be in the 25 to 56 percent range. In addition, average crack width can be estimated from crack length and crack area measurements and was calculated to be about 10 mm. Among the parameters studied, the fraction of sample surface area that is occupied by crack lines is believed to be most useful in characterizing the degree of silicone conversion to silicates by AO because its value steadily increases with increasing fluence over the entire fluence range. A series of SEM images from the eight samples exposed to different AO fluences suggest a complex sequence of surface stress due to surface shrinkage and crack formation, followed by re-distribution of stress and shrinking rate on the sample surface. Energy dispersive spectra (EDS) indicated that upon AO exposure, carbon content on the surface decreased relatively quickly at the beginning, to 32 percent of the pristine value for the least exposed sample in this set of experiments (1.46 10(exp 21) atoms/sq cm), but then decreased slowly, to 22 percent of the pristine value for the most exposed sample in this set of experiment (8.43 10(exp 21) atoms/sq cm). The oxygen content appears to increase at a slower rate. The least and most AO exposed samples were, respectively, 52 and 150 percent above the pristine values. The silicone samples with the greater AO exposure (7.75 10(exp 21) atoms/sq cm and higher) appear to have a surface layer which contains SiO2 with perhaps small amounts of unreacted silicone, CO and CO2 sealed inside.
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Radiation effects on materials and electronics is a major topic that needs to be addressed for a nuclear reactor flight demonstration of the Kilopower reactor. The Kilopower project team has taken steps towards developing a standardized radiation environment qualification program for components and materials. Candidate nuclear reactor facilities for both low fluence electronics and high fluence materials irradiations have been identified and approached. Collaborations are being pursued with both NASA and external experts to ensure that the results of the qualification testing are appropriate and relevant to nuclear fission power flight systems.
Prairie View A&M University (PVAMU) Center for Applied Radiation Research (CARR) was established in 1995 to address the tasks, missions and technological needs of NASA. CARR is built on a tradition of radiation research at Prairie View A&M started in 1984 with NASA funding. This continuing program has lead to: (1) A more fundamental and practical understanding of radiation effects on electronics and materials; (2) A dialog between space, military and commercial electronics manufacturers; (3) Innovative electronic circuit designs; (4) Development of state-of-the-art research facilities at PVAMU; (5) Expanded faculty and staff to mentor student research; and (6) Most importantly, increased flow in the pipeline leading to expanded participation of African-Americans and other minorities in science and technological fields of interest to NASA.
High voltage insulator for electron bombardment ion thruster has electric field directed through dielectric material and electrons emitted by field emission are constrained in negative junction region. Surface flashover and unstable operation are eliminated, and maximum voltage is limited only by dielectric strength of material, aluminum oxide in this case.
The results of the Trapped Radiation Effects Panel for the Space Environmental Effects on Materials Workshop are presented. The needs of the space community for new data regarding effects of the space environment on materials, including electronics are listed. A series of questions asked of each of the panels at the workshop are addressed. Areas of research which should be pursued to satisfy the requirements for better knowledge of the environment and better understanding of the effects of the energetic charged particle environment on new materials and advanced electronics technology are suggested.
This investigation was undertaken to evaluate if molten metal or electron beam impingement could damage or burn through the fabric of the astronauts Extravehicular Mobility Unit (EMU) during electron beam welding exercises performed in space. An 8 kilovolt electron beam with a current in the neighborhood of 100 milliamps from the Ukrainian space welding "Universal Hand Tool" burned holes in Nextel AF-62 ceramic cloth designed to withstand temperatures up to 1427 C. The burnthrough time was on the order of 8 seconds at standoff distances between UHT and cloth ranging from 6 to 24 inches. At both closer (2") and farther (48") standoff distances the potency of the beam against the cloth declined and the burnthrough time went up significantly. Prior to the test it had been expected that the beam would lay down a static charge on the cloth and be deflected without damaging the cloth. The burnthrough is thought to be an effect of partial transmission of beam power by a stream of positive ions generated by the high voltage electron beam from contaminant gas in the "vacuum" chamber. A rough quantitative theoretical computation appears to substantiate this possibility.
A ceramic- and thick-film-materials-based prototype electronic package designed for silicon carbide (SiC) high-temperature sensors and electronics has been successfully tested at 500 C in an oxygen-containing air environment for 500 hours. This package was designed, fabricated, assembled, and electronically evaluated at the NASA Glenn Research Center at Lewis Field with an in-house-fabricated SiC semiconductor test chip. High-temperature electronics and sensors are necessary for harsh-environment space and aeronautical applications, such as space missions to the inner solar system or the emission control electronics and sensors in aeronautical engines. Single-crystal SiC has such excellent physical and chemical material properties that SiC-based semiconductor electronics can operate at temperatures over 600 C, which is significantly higher than the limit for Si-based semiconductor devices. SiC semiconductor chips were recently demonstrated to be operable at temperatures as high as 600 C, but only in the probe station environment because suitable packaging technology for sensors and electronics at temperatures of 500 C and beyond did not exist. Thus, packaging technology for SiC-based sensors and electronics is immediately needed for both application and commercialization of high-temperature SiC sensors and electronics. In response to this need, researchers at Glenn designed, fabricated, and assembled a prototype electronic package for high-temperature electronics, sensors, and microelectromechanical systems (MEMS) using aluminum nitride (AlN) substrate and gold (Au) thick-film materials. This prototype package successfully survived a soak test at 500 C in air for 500 hours. Packaging components tested included thick-film high-temperature metallization, internal wire bonds, external lead bonds, and a SiC diode chip die-attachment. Each test loop, which was composed of thick-film printed wire, wire bond, and lead bond was subjected to a 50-mA direct current for 250 hours at 500 C.
Gallium nitride (GaN), a wide bandgap (WBG) semiconductor, has emerged as a very promising material for electronic components due to the tremendous advantages it offers compared to silicon (Si), such as power capability, extreme temperature tolerance, and high frequency operation. This report serves as a body of knowledge (BOK) in reference to the development and current status of GaN technology obtained via literature and industry surveys. It provides a listing of the major manufacturers and their capabilities, as well as government, industry, and academic parties interested in the technology. The document also discusses GaN’s applications in the area of power electronics, in particular those geared for space missions. Finally, issues relevant to the reliability of GaN-based electronic parts are addressed and limitations affecting the full utilization of this technology are identified. This BOK focuses mainly on power applications for GaN, but will also briefly mention radio frequency (RF) applications for completeness.
Analyses with a scanning transmission x-ray microscope (STXM) using x-ray absorption near edge structure (XANES) spectroscopy were applied for the molecular characterization of two kinds of carbonaceous particles of unknown origin, termed category 3, which were collected from the Hayabusa spacecraft sample catcher. Carbon-XANES spectra of the category 3 particles displayed typical spectral patterns of heterogeneous organic macromolecules; peaks corresponding to aromatic/olefinic carbon, heterocyclic nitrogen and/or nitrile, and carboxyl carbon were all detected. Nitrogen-XANES spectra of the particles showed the presence of N-functional groups such as imine, nitrile, aromatic nitrogen, amide, pyrrole, and amine. An oxygen-XANES spectrum of one of the particles showed a ketone group. Differences in carbon- and nitrogen-XANES spectra of the category 3 particles before and after transmission electron microscopic (TEM) observations were observed, which demonstrates that the carbonaceous materials are electron beam sensitive. Calcium-XANES spectroscopy and elemental contrast mapping identified a calcium carbonate grain from one of the category 3 particles. No fluorine-containing molecular species were detected in fluorine-XANES spectra of the particles. The organic macromolecular features of the category 3 particles were distinct from commercial and/or biological ‘fresh (non-degraded)’ polymers, but the category 3 molecular features could possibly reflect degradation of contaminant polymer materials or polymer materials used on the Hayabusa spacecraft. However, an extraterrestrial origin for these materials cannot currently be ruled out.
There is considerable current interest in the application of organic and polymeric materials for electronic and photonic devices. The rapid, non-linear optical (NLO) response of these materials makes them attractive candidates for waveguides, interferometers, and frequency doublers. In order to realize the full potential of these systems, it is necessary to develop processing schemes which can fabricate these molecules into ordered arrangements. There is enormous potential for introducing well-defined, local variations in microstructure to control the photonic properties of organic materials by rational 'defect engineering.' This effort may eventually become as technologically important as the manipulation of the electronic structure of solid-state silicon based devices is at present. The success of this endeavor will require complimentary efforts in the synthesis, processing, and characterization of new materials. Detailed information about local microstructure will be necessary to understand the influence of symmetry breaking of the solid phases near point, line, and planar defects. In metallic and inorganic polycrystalline materials, defects play an important role in modifying macroscopic properties. To understand the influence of particular defects on the properties of materials, it has proven useful to isolate the defect by creating bicrystals between two-component single crystals. In this way the geometry of a grain boundary defect and its effect on macroscopic properties can be determined unambiguously. In crystalline polymers it would be valuable to establish a similar depth of understanding about the relationship between defect structure and macroscopic properties. Conventionally processed crystalline polymers have small crystallites (10-20 nm), which implies a large defect density in the solid state. Although this means that defects may play an important or even dominant role in crystalline or liquid crystalline polymer systems, it also makes it difficult to isolate the effect of a particular boundary on a macroscopically observed property. However, the development of solid-state and thin-film polymerization mechanisms have facilitated the synthesis of highly organized and ordered polymers. These systems provide a unique opportunity to isolate and investigate in detail the structure of covalently bonded solids near defects and the effect of these defects on the properties of the material. The study of defects in solid polymers has been the subject of a recent review (Martin, 1993).
Graphene-based materials have allowed fundamental advances in fields such as energy storage, electronics development, material science, optics, medicine, and water processing due to its unique two-dimensional structure, mechanical robustness, large surface, and high conductivity. However, little to no effort has been devoted to exploiting and studying these materials to develop new water technologies suited for spacecraft applications. One such application is the potential use of graphene-based materials as filtration media for reclaimed water. Therefore, studying the adsorptive performance of these new materials becomes crucial in identifying the opportunity to replace/upgrade State-of-the-Art filtration media currently used in space vehicles with water-recovery capability; especially if consumable requirements can be lessened as a result of extended filtration capacity. This early life-support-systems investigation pioneers in graphene-research by testing a number of graphene-based materials in comparative adsorption and antimicrobial experiments where contaminant removal efficiency, maximum adsorption capacity, and log reduction are probed. This preliminary investigation informs on the practicability of using graphene-based materials as filtration media and provides a discussion on the scaling-up and optimization of this prospective filtration technology for spacecraft potable water systems.