Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “electrical resistivity”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2020

Aberrant electronic and structural alterations in pressure tuned perovskite NaOsO 3

The perovskite NaOsO 3 has a metal–insulator transition at temperature 410 K, which is delicate, intriguing, and provokes a lot of debate on its nature. Our combined electrical resistance, Raman, and synchrotron x-ray diffraction experiments show that the insulating ground state in this osmate endures under high pressure up to at least 35 GPa. In this pressure range, compression reveals hidden hysteretic resistance properties with a transient metallic state near 200 K, manifested three electronic character anomalies (at 1.7, 9.0, and 25.5 GPa), and a structural transition to the singular polar phase (at ~18 GPa). We distinguish NaOsO 3 from the regular crystallographic behavior of perovskites, though the electrical specificities resemble iridates and nickelates. The theoretical first-principle band structure and lattice dynamics calculations demonstrate that the magnetically itinerant Lifshitz-type mechanism with spin–orbit and spin–phonon interactions is responsible for these pressure-induced changes. Our findings provide another new playground for the emergence of new states in 5d materials by using high-pressure methods.

36 MATERIALS SCIENCE↗
DOE OSTI2021

EGS-Collab Experiment 1: Time-lapse ERT Data and E4D Inversion Files for 10-24-2018 through 11-07-2018 Flow Test

This data submission includes the raw time-lapse ERT (electrical resistivity tomography) monitoring data, flow system data, operator logs, E4D (https://e4d.pnnl.gov) inversion files, and meta-data necessary to reproduce the 4D ERT inversion for the Oct. 24 through Nov. 7 2018 post-stimulation flow test in test bed 1. The tests were done at the Sanford Underground Research Facility at Homestake Mine in South Dakota.

15 GEOTHERMAL ENERGY↗
DOE OSTI2026

Dielectric properties of neutron and proton irradiated polymeric nanocomposite insulation for superconducting magnets of fusion power plants

Studies on radiation-resistant electrical insulation for superconducting magnets of nuclear fusion power plants are discussed. Metal oxide nanoparticle-incorporated organic polymer composite (MONAP) insulation films were manufactured and studied for their dielectric breakdown strength after exposure to neutrons and proton radiation at varying levels. Samples with up to 5 wt% of nanoparticles (NPs) of SiO 2 , MgO, and ZrO 2 were studied. The samples were exposed to radiation of up to 2 × 10 16 neutrons/cm 2 and 200 Mrad of protons. The addition of the nanoparticles improved the radiation resistance of the MONAP, and the performance depended on the type of NPs and the radiation exposure. Dielectric breakdown measurements at 77 K showed little degradation. Enhancement of dielectric strength was observed in some instances.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Thermodynamic and electron transport properties of Ca 3 Ru 2 O 7 from first-principles phonon calculations and Boltzmann transport theory

Here, this work demonstrates a first-principles-based approach to obtaining finite temperature thermal and electronic transport properties which can be employed to model and understand mesoscale structural evolution during electronic, magnetic, and structural phase transitions. A computationally tractable model was introduced to estimate electron relaxation time and its temperature dependence. The model is applied to Ca 3 Ru 2 O 7 with a focus on understanding its electrical resistivity across the electronic phase transition at 48 K. A quasiharmonic phonon approach to the lattice vibrations was employed to account for thermal expansion while the Boltzmann transport theory including spin-orbit coupling was used to calculate the electron-transport properties, including the temperature dependence of electrical conductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Data Acquisition System Selection and Calibration of Resistive Moisture Content Measurements for Large-Scale Field Studies in Cold Climate Residential Building Envelope Performance

The residential building stock built before the energy codes were enforced has several significant inefficiency problems in terms of insulation and air leakage. To decrease these inefficiencies, building retrofits are necessary. However, if the envelope is not appropriately designed, excessive accumulation of moisture content and thus mold formation and decay inside the envelope layers can be a vital problem. This risk becomes higher, especially in extreme climate conditions such as cold winters and hot and humid summers as in some northern regions of the U.S. Field studies are essential to test the long-term hygrothermal performance of building envelopes. Although in-situ temperature, RH, and heat flux measurements are straightforward, moisture content measurements are cumbersome. Mainly, because of the heterogeneous nature of the wood materials, deviations and nonuniformities within the materials are unavoidable. Resistance measurements are one of the oldest methods used to measure the moisture content of wood and other building materials. In large-scale studies, it is commonly preferred to use multi-purpose data acquisition systems (DAQ) and custom-made or prefabricated moisture pins to measure the electrical resistance (and thus moisture content) of critical building materials. These multi-purpose DAQ systems generally provide lower costs and offer more flexibility. However, these systems require calibration and fine-tuning to achieve accurate moisture content measurements. A large-scale, two-year-long field study was conducted in northern Minnesota to monitor the hygrothermal performance of residential retrofit wall systems in cold climates. Two base case walls and sixteen different wall treatments were tested. Moisture contents were measured at various layers in each wall treatment using 85 sets of moisture pins. This paper focuses on the overall approach, fabrication, and calibration methodology for the combination of custom-made moisture pins and a multi-purpose DAQ. The aim is to directly use the low-excitation multi-purpose DAQ without any extra voltage regulator. A half-bridge circuit is used to measure wood resistance with 4V excitation voltage and 100 kΩ and 500 kΩ reference resistors. The system is calibrated for four different materials: Douglas fir, lodgepole pine, western red cedar, and oriented strand board (OSB). Calibration experiments were done under controlled conditions in 50% and 65% RH test chambers. Resistance-based moisture content calibration curves are obtained for each species. Results show that higher reference resistors provided better calibration curves for lower excitation voltages.

Desjarlais, Andre Omer↗
DOE OSTI2026

Andrew Dieringer Poster for review

Silicon carbide has been identified as a useful material for nuclear application due to its heat resistance, low neutron absorbing cross-section, chemical inertness, and its rigidity as a structural material. These properties make it very favorable for high temperature environments such as in TRISO fuel and advanced reactor designs. Treatments such as n-doping, where carrier atoms are added to increase the number of free electrons, are expected to further improve properties such as thermal conductivity and electrical resistivity. Due to the high amount of neutron interactions in a nuclear reactor, it is expected that silicon carbide used in a reactor will be passively n-doped via transmutation. Studying the effects of n-doping in silicon carbide can help us better understand how the material will operate under real world conditions. We have found that n-doping the SiC increases both thermal and electrical conductivity, providing positive feedback under reactor usage. Previously it had been thought that under reactor conditions material properties of SiC could only degrade due to defects caused by neutron interactions. This study shows that transmutation doping can help to counteract and slow this process. This research shows that SiC can be used in nuclear reactor components contrasting with more costly and complicated alternative materials.

36 - MATERIALS SCIENCE↗
DOE OSTI2024

Robust superconductivity and the suppression of charge-density wave in the quasi-skutterudites Ca 3 ( Ir 1 – x Rh x ) 4 Sn 13 single crystals at ambient pressure

Single crystals of the quasi-skutterudite compounds Ca 3 (Ir 1-x Rh x ) 4 Sn 13 (3–4–13) were synthesized by flux growth and characterized by x-ray diffraction, energy dispersive x-ray spectroscopy, magnetization, resistivity, and radio frequency magnetic susceptibility techniques. The coexistence and competition between the charge density wave (CDW) and superconductivity was studied by varying the Rh/Ir ratio. The superconducting transition temperature, T c , varies from 7 K in pure Ir (x = 0) to 8.3 K in pure Rh (x = 1). Temperature-dependent electrical resistivity reveals monotonic suppression of the CDW transition temperature, T CDW (x). The CDW starts in pure Ir, x = 0, at T CDW ≈ 40 K and extrapolates roughly linearly to zero at x c ≈ 0.53–0.58 under the superconducting dome. Magnetization and transport measurements show a significant influence of CDW on superconducting and normal states. Meissner expulsion is substantially reduced in the CDW region, indicating competition between the CDW and superconductivity. The low-temperature resistivity is higher in the CDW part of the phase diagram, consistent with the reduced density of states due to CDW gapping. Its temperature dependence just above T c shows signs of non-Fermi liquid behavior in a cone-like composition pattern. We conclude that the Ca 3 (Ir 1-x Rh x ) 4 Sn 13 alloy is a good candidate for a composition-driven quantum critical point at ambient pressure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Differences in the resistive and thermodynamic properties of the single crystalline chiral superconductor candidate SrPtAs

The locally noncentrosymmetric superconductor SrPtAs is proposed to host a topological chiral d-wave state, but experimental reports have been limited to polycrystalline samples. Here we report the synthesis of single crystalline SrPtAs grown from Pb flux. SrPtAs crystallizes in the hexagonal space group P⁢6 3 /mmc with lattice parameters a=4.2445⁢(4) Å and c=8.9513⁢(18) Å. Additionally, magnetic susceptibility and electrical resistivity measurements reveal a superconducting transition at T c ~2.2 K, in agreement with previous reports on polycrystalline samples. Surprisingly, heat capacity data show only a small bulk transition at 0.7 K. We discuss the possible origins of the discrepancy between the various measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Thermal transport properties of IrSbSe

Here we report a thermal transport study of IrSbSe, which crystallizes in a noncentrosymmetric cubic structure with the P2 1 3 space group and shows a narrow-gap semiconducting behavior. The large discrepancy between the activation energy for conductivity [E ρ = 128(2) meV] and for thermopower [E S = 17.7 (9) meV] from 200 to 300 K indicates a polaronic transport mechanism. The electrical resistivity varies as exp (T 0 /T) 1/4 and thermopower varies as T 1/2 at low temperatures, indicating that it evolves into Mott variable-range hopping dominant conduction with decreasing temperature. IrSbSe shows a relatively low value of thermal conductivity (~1.65 W/Km) and thermopower of about 0.24 mV/K around 100 K, yet poor electrical conductivity. On the other hand, a high vacancy defect concentration on both Ir and Sb atomic sites of up to 15% suggests a high defect tolerance and points to the possibility of a future improvement of carrier density by chemical substitution or defect optimization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Possible surface magnetism in the topological Kondo insulator candidate FeSi

Our group has previously reported the existence of a conducting surface state (CSS) in FeSi, a candidate for a d-electron topological Kondo insulator (TKI), at low temperature. In this paper, we present the electrical transport properties of single crystals of FeSi studied in the phase space of temperature (T), magnetic field (B), and the angle (θ) between the electrical current and B. The normalized T-dependent electrical resistance (R) of a successively thinned FeSi crystal provides further confirmation of the existence of a CSS. We report that, in the CSS, the magnetoresistance (MR) exhibits a hysteresis loop bounded within ±0.5 T, suggesting two-dimensional magnetic ordering. The hysteretic MR is asymmetric in B and anisotropic with respect to θ. Further exploration of R(θ) at a fixed field of 9 T reveals an initial progressive rotation of the axis for twofold rotational symmetry from 2 to 10 K, then a stabilized axis for twofold symmetry until, at T > 40 K, the anisotropy vanishes, coincident with the disappearance of the CSS. Furthermore, these observations point to a possible magnetically ordered surface state that has been reported in similar systems such as FeSi nanofilms and bulk SmB 6 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Impact of illumination and encapsulant resistivity on polarization-type potential-induced degradation on n-PERT cells

Power loss caused by polarization-type potential-induced degradation (PID-p) in a variety of high-performance photovoltaic cell types has been observed to be recoverable via subsequent illumination and in some cases preventable via simultaneous illumination. In this report, we describe the results of a study in which the front faces of n-PERT cells encapsulated in polymers with a broad range of electrical resistivity were exposed to varying and controlled irradiance during PID testing. For a low resistivity ethylene-vinyl acetate copolymer encapsulant, no reduction in the rate or extent of power loss was observed for irradiance as high as 1,000 W/m 2 , whereas for high and intermediate resistivity polyolefin encapsulants, 100 and 300 W/m 2 , respectively, prevented power loss. We introduce a simple model based on charge accumulation that facilitates interpretation of these results whereby degradation via charge accumulation under voltage stress and recovery due to light exposure are opposing and interdependent phenomena that describe the susceptibility of a module to power loss.

14 SOLAR ENERGY↗
DOE OSTI2026

Electromagnetic Induction (EMI) Data, 2024, Trail Creek, Colorado

This dataset contains Electromagnetic Induction (EMI) data collected at Trail Creek, Colorado, in 2024. EMI surveys were conducted to investigate the spatial distribution of electrical conductivity in the subsurface, providing insights into soil moisture and subsurface geological features. The surveys were performed along multiple transects to capture variations in conductivity influenced by changes in soil composition, moisture content, and underlying geological structures. This dataset complements other geophysical data collected in the region, including Electrical Resistivity Tomography (ERT) and Terrestrial LiDAR Scanning (TLS), providing a detailed understanding of the subsurface and its impact on surface vegetation and hydrological processes. The data are valuable for environmental geophysics, ecological research, and hydrological modeling in mountainous ecosystems. The files include: - data.zip: the raw EMI data (.csv) - inversion.zip: the inverted resistivity model (.csv and .kml) - kriging.zip: the kriging resistivity model (.csv, .tif, .kmz) - flmd.csv: file level metadata file describing all files within this dataset - dd.csv: data dictionary file describing the column headers within CSV files This work was supported by the Watershed Function Science Focus Area at Lawrence Berkeley National Laboratory funded by the US Department of Energy, Office of Science, Biological and Environmental Research under Contract No. DE-AC02-05CH11231.

CMD Mini-Explorer↗
DOE OSTI2022

Visualization of defects in single-crystal and thin-film PdCoO 2 using aberration-corrected scanning transmission electron microscopy

Single-crystal delafossite PdCoO 2 is known to have an extremely low intrinsic impurity concentration of ~0.001%, demonstrating extraordinarily high conductivity with a mean free path of ~20 μm at low temperatures. However, when grown as thin films, the resistivity at room temperature increases by a factor of 3–80 times, depending on the film thickness. Using scanning transmission electron microscopy, we identify different classes of defects for the single crystal vs epitaxial thin film. The dominant defect for single-crystal PdCoO 2 is found to be ribbonlike defects. For the thin films, we identify different types of defects arising in epitaxial thin films mainly due to substrate termination that disrupt the lateral connectivity of the conducting planes. Further, our results are consistent with the high conductivity of single crystals and increased electrical resistivity of the thin films compared to that of single crystals, suggesting that selecting a proper substrate, improving surface quality, and reducing the step density are the keys to enhance the film quality for utilizing PdCoO 2 as a platform for future applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

High field dielectric response in κ-Ga 2 O 3 films

κ-Ga 2 O 3 has been predicted to be a potential ferroelectric material. In this work, undoped Ga 2 O 3 films were grown by either plasma-enhanced atomic layer deposition (PEALD) or metal organic chemical vapor deposition (MOCVD) on platinized sapphire substrates. 50 nm thick PEALD films with a mixture of κ-Ga 2 O 3 and β-Ga 2 O 3 had a relative permittivity of ~27, a loss tangent below 2%, and high electrical resistivity up to ~1.5 MV/cm. 700 nm thick MOCVD films with predominantly the κ-Ga 2 O 3 phase had relative permittivities of ~18 and a loss tangent of 1% at 10 kHz. Neither film showed compelling evidence for ferroelectricity measured at fields up to 1.5 MV/cm, even after hundreds of cycles. Here, piezoresponse force microscopy measurements on bare κ-Ga 2 O 3 showed a finite piezoelectric response that could not be reoriented for electric fields up to 1.33 MV/cm.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Origin of gaplike behaviors in URu 2 Si 2 : Combined study via quasiparticle scattering spectroscopy and resistivity measurements

In this work, we address two long-standing questions regarding the hidden order in URu 2 Si 2 : Is it associated with the hybridization process, and what are the distinct roles played by the localized and itinerant electrons? Our quasiparticle scattering spectroscopy reveals a hybridization gap ubiquitous in the entire phase space spanned by P and Fe substitutions in URu 2 Si 2 , including the no-order and antiferromagnetic regions, with minimal change upon crossing the phase boundary. This indicates its opening is not associated with the ordering, and thus localized electrons must be the major player. Towards a consistent understanding of all the other gaplike behaviors observed only below transition temperatures, we analyze the electrical resistivity using a model in which gapped bosonic excitations are the dominant scattering source. With their stiffness set to follow an unusual temperature dependence (decreasing with decreasing temperature), this model fits all of our resistivity data well including the jump at the transition. Remarkably, the extracted gap increases slowly with increasing Fe content, similarly to the gap detected by inelastic neutron scattering at $Q_1$ = (1.4, 0, 0), suggesting a common origin. Such a model can also naturally explain the Hall effect temperature dependence without invoking Fermi surface gapping.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

First-order structural phase transition at low temperature in GaPt 5 P and its rapid enhancement with pressure

Single crystals of X Pt 5 ⁢P (X = Al, Ga, and In), belonging to the 1-5-1 family of compounds, were grown from a Pt-P solution at high temperatures, and measurements of the ambient pressure, temperature-dependent magnetization, resistivity, and x-ray diffraction were made. Additionally, the ambient-pressure Hall resistivity and temperature-dependent resistance under pressure were measured on GaPt 5 ⁢P. All three compounds have a tetragonal P4/mmm crystal structure at room temperature with metallic transport and weak diamagnetism over the 2–300 K temperature range. Surprisingly, at ambient pressure, both the transport and magnetization measurements on GaPt 5 ⁢P show a steplike feature in the 70–90 K region, suggesting a possible structural phase transition. Neither AlPt 5 ⁢P nor InPt 5 ⁢P have any signatures of a phase transition in their temperature-dependent electrical resistance and magnetization data. Both the hysteretic nature and sharpness of the features in the GaPt 5 ⁢P data suggest that the transition is first-order. Further, single-crystal x-ray diffraction measurements provided further details of the structural transition with a possibility of a crystal symmetry different from P⁢4/mmm below the transition temperature. The transition is characterized by anisotropic changes in the lattice parameters and a volume collapse with respect to the high-temperature tetragonal crystal structure. Furthermore, satellite peaks are observed at two distinct and nonequivalent wave vectors (0, 0, 0.5) and (0.5, 0.5, 0.5), and density functional theory calculations present phonon softening, especially at (0.5, 0.5, 0.5), as a possible driving mechanism. Additionally, we find that the structural transition temperature increases rapidly with increasing pressure, reaching room temperature by ~2.2 GPa, highlighting the high degree of pressure sensitivity of GaPt 5 ⁢P and fragile nature of its room-temperature structure. Even though the volume collapse and extreme pressure sensitivity suggest chemical pressure should drive a similar structural change in AlPt 5⁢ P, where both unit-cell dimensions and volume are smaller, its structure is found to be the same as that of the room-temperature GaPt 5 ⁢P. Overall, GaPt 5 ⁢P stands out as a sole member of the 1-5-1 family of compounds for which a temperature-driven structural change has been observed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Evaluation of microstructural changes in fresh cement paste using AC impedance spectroscopy vs. oscillation rheology and 1H NMR relaxometry

AC impedance spectroscopy (ACIS) is a promising technique for monitoring the microstructure evolution of fresh cement paste in real-time. This paper compared the change of bulk electric resistivity (ρ{sub bulk}) obtained from ACIS with the developments of storage modulus (G′) and the mean transverse relaxation times (T{sub 2}) of fresh Portland cement pastes within 5 h. It was found that the three different phases (Phase I, II, and III) on the microstructural build-up process of fresh paste can be accurately distinguished by analyzing ρ{sub bulk}, as well as G′ and T{sub 2}. The use of ρ{sub bulk} fails to characterize the microstructural changes in Phase I due to the great sensitivity on the electrical conductivity of the interstitial solution. However, it can successfully reflect the developing features of microstructure in Phases II and III, and reliably evaluate the impacts of water to cement ratio, superplasticizer, and supplementary cementitious materials on the microstructural development.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Ionizing Radiation Sensing with Functionalized and Copper-Coated SWCNT/PMMA Thin Film Nanocomposites

This paper studies the ionizing radiation effects on functionalized single-walled carbon nanotube (SWCNT)/poly(methyl methacrylate) (PMMA) thin-film nanocomposites [SWNT/PMMA]. The functionalized thin-film devices are made of ferrocene-doped SWCNTs, SWCNTs functionalized with carboxylic acid (COOH), and SWCNTs coated/ modified with copper. The nanocomposite was synthesized by the solution blending method and the resulting nanocomposite was spin-cast on interdigitated electrodes (IDEs). A 160 kV X-ray source was used to irradiate the thin film and changes in the electrical resistance of the nanocomposites due to X-rays were measured using a semiconductor device analyzer. Carboxylic acid functionalized and copper-coated SWCNT/PMMA nanocomposite showed a reduced response to X-rays compared to unfunctionalized SWCNT/PMMA nanocomposite. Ferrocene-doped SWCNT showed a higher sensitivity to X-rays at lower dose rates. This is in contrast to a previous study that showed that similar nanocomposites using functionalized multi-walled CNTs (MWCNTs) had demonstrated an improved response to X-rays ionizing radiation compared to unfunctionalized MWCNTs for all dose rates. Electrical measurements were also performed using the Arduino Nano microcontroller. The result showed that a relatively economical, lightweight-designed prototype radiation sensor based on SWCNT/PMMA thin-film devices could be produced by interfacing the devices with a modest microcontroller. This work also shows that by encapsulating the SWCNT/PMMA thin-film device in a plastic container, the effect of ambient humidity can be reduced and the device can still be used to detect X-ray radiation. This study further shows that the sensitivity of SWCNT to X-rays was dependent on both the functionalization of the SWCNT and the dose rate.

36 MATERIALS SCIENCE↗