SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Material variations on an atomic scale enable the quantum mechanical functionality of devices such as resonant tunneling diodes (RTDs), quantum well infrared photodetectors (QWIPs), quantum well lasers, and heterostructure field effect transistors (HFETs).
A bipolar transistor in series with the battery as the control element also in series with a zener diode and a resistor is used to maintain a predetermined voltage until the battery voltage decays to very nearly the predetermined voltage. A field effect transistor between the base of the bipolar transistor and a junction between the zener diode and resistor regulates base current of the bipolar transistor, thereby regulating the conductivity of the bipolar transistor for control of the output voltage.
The technology was studied for producing Pb-salt diode lasers for the 8-51 micron spectral region suitable for use as local oscillators in a passive Laser Heterodyne Spectrometer (LHS). Consideration was given to long range NASA plans for the utilization of the passive LHS in a space shuttle environment. The general approach was to further develop the method of compositional interdiffusion (CID) recently reported, and used successfully at shorter wavelength. This technology was shown to provide an effective and reproducible method of producing a single-heterostructure (SH) diode of either the heterojunction or single-sided configuration. Performance specifications were exceeded in several devices, with single-ended CW power outputs as high as 0.88 milliwatts in a mode being achieved. The majority of the CID lasers fabricated had CW operating temperatures of over 60K; 30% of them operated CW above the boiling temperature of liquid nitrogen. CW operation above liquid nitrogen temperature was possible for wavelengths as long as 10.3 microns. Operation at 77K is significant with respect to space shuttle operations since its allows considerable simplification of cooling method.
Irradiation effects on semiconductor properties, luminescence, and p-i-n diode electrical properties
The surface of rare-earth silicides (Er, Tb, etc.), formed by the reaction of thin-film metal layers with a silicon substrate, is typically dominated by deep penetrating, regularly shaped pits. These pits may have a detrimental effect on the electronic performance of low Schottky barrier height diodes utilizing such silicides on n-type Si. This study suggests that contamination at the metal-Si or silicide-Si interface is the primary cause of surface pitting. Surface pits may be reduced in density or eliminated entirely through either the use of Si substrate surfaces prepared under ultrahigh vacuum conditions prior to metal deposition and silicide formation or by means of ion irradiation techniques. Silicide layers formed by these techniques possess an almost planar morphology.
A microwave integrated circuit active receiver is built and tested at 19-25 GHz. The receiver consists of a planar CPW-fed double folded-slot antenna coupled to a six-stage MESFET (metal semiconductor field effect transistors) amplifier and followed by a planar Schottky-diode detector. The folded-slot antenna on a GaAs half-space results in a wide frequency bandwidth suitable for MMIC amplifiers. The measured system performance show a video responsivity close to 1 GV/W at 20 GHz with a 3-dB bandwidth of 1500 MHz. A novel method which uses the planar video detector after the amplifier stages as an RF (radio frequency) mixer is used to measure the noise-figure of the direct detection radiometer. The system noise figure is 4.8 dB at 22 GHz. The radiometer sensitivity to a hot/cold load is 3.8 mu V/K. The measured antenna patterns show a 90% Gaussicity at 20-22 GHz. The active MIC receiver can be integrated monolithically for low-cost applications and is well suited for millimeter-wave linear imaging arrays.
The International Space Station (ISS) solar arrays utilize MD-944 diode tape to protect the underlying diodes in the solar array panel circuit and also provide thermal conditioning and mechanical support. The diode tape consists of silicone pressure sensitive adhesive (Dow Coming QC-7725) with a protective Kapton over-layer. On-orbit, the Kapton over-layer will erode under exposure to atomic oxygen (AO) and the underlying exposed silicone adhesive will ultimately convert, under additional AO exposure, to a glass like silicate. The current operational plan is to retract ISS solar array P6 and leave it stored under load for a long duration (6 months or more) during ISS assembly. With the Kapton over-layer eroded away, the exposed silicone adhesive must not cause the solar array to stick to itself or cause the solar array to fail during redeployment. Previous testing by Lockheed-Martin Space Systems (LMSS) characterized silicone blocking following exposure to low energy atomic oxygen (AO) in an asher facility, but this is believed to be conservative. An additional series of tests was performed by the Environmental Effects Group at MSFC under direction from the ISS Program Office Environments Team. This test series included high energy AO (5 eV), near ultraviolet (NUV) radiation and ionizing radiation, singly and in combination. Additional samples were exposed to thermal energy AO (<0.1 ev) for comparison to the LMSS tests. Diode tape samples were exposed to each environment constituent individually, put under preload for seven days and then the resulting blocking force was measured using a tensile machine. Additional samples were exposed to AO, NUV and electrons in series and then put under long term (three to ten months) preload to determine the effect of preload duration on the resulting blocking force of the silicone-to-silicone bond. Test results indicate that high energy AO, ultraviolet radiation and electron ionizing radiation exposure all reduce the blocking force for a silicone-to-silicone bond. AO exposure produces the most significant reduction in blocking force.
Commercial silicon carbide and silicon Schottky barrier power diodes have been subjected to 203 MeV proton irradiation and the effects of the resultant displacement damage on the I-V characteristics have been observed. Changes in forward bias I-V characteristics are reported for fluences up to 4 x 10(exp 14) p/cm2. For devices of both material types, the series resistance is observed to increase as the fluence increases. The changes in series resistance result from changes in the free carrier concentration due to carrier removal by the defects produced. A simple model is presented that allows calculation of the series resistance of the device and then relates the carrier removal rate to the changes in series resistance. Using this model to calculate the carrier removal rate in both materials reveals that the carrier removal rate in silicon is less than that in silicon carbide, indicating that silicon is the more radiation tolerant material.
The continued down-scaling of electronic devices, in particular the commercially dominant MOSFET, will force a fundamental change in the process of new electronics technology development in the next five to ten years. The cost of developing new technology generations is soaring along with the price of new fabrication facilities, even as competitive pressure intensifies to bring this new technology to market faster than ever before. To reduce cost and time to market, device simulation must become a more fundamental, indeed dominant, part of the technology development cycle. In order to produce these benefits, simulation accuracy must improve markedly. At the same time, device physics will become more complex, with the rapid increase in various small-geometry and quantum effects. This work describes both an approach to device simulator development and a physical model which advance the effort to meet the tremendous electronic device simulation challenge described above. The device simulation approach is to specify the physical model at a high level to a general-purpose (but highly efficient) partial differential equation solver (in this case PROPHET, developed by Lucent Technologies), which then simulates the model in 1-D, 2-D, or 3-D for a specified device and test regime. This approach allows for the rapid investigation of a wide range of device models and effects, which is certainly essential for device simulation to catch up with, and then stay ahead of, electronic device technology of the present and future. The physical device model used in this work is the density-gradient (DG) quantum correction to the drift-diffusion model [Ancona, Phys. Rev. B 35(5), 7959 (1987)]. This model adds tunneling and quantum smoothing of carrier density profiles to the drift-diffusion model. We used the DG model in 1-D and 2-D (for the first time) to simulate both bipolar and unipolar devices. Simulations of heavily-doped, short-base diodes indicated that the DG quantum corrections do not have a large effect on the IN characteristics of electronic devices without heteroj unction s. On the other hand, ultra-small MOSFETs certainly exhibit important quantum effects that the DG model will include: quantum repulsion of the inversion and gate charges from the oxide interfaces, and quantum tunneling through thin gate oxides. We present initial results of 2-D DG simulations of ultra-small MOSFETs. Subtle but important issues involving the specification of the model, boundary conditions, and interface constraints for DG simulation of MOSFETs will also be illuminated.
Explore the source record for details and available documents.
Growing plants in space will be an essential part of sustaining astronauts during long-range missions. To drive photosynthesis, light-emitting diodes (LEDs) are becoming superior because of their efficiency, longevity, small size, safety, and wavelength versatility. Isolating the effects of certain wavelengths on plant growth when combined with white light is attracting attention. To optimize crop production/quality in space, this study has aimed to configure novel light recipes for the Advanced Plant Habitat currently aboard the International Space Station (ISS). By using white light as a background to maintain normal growth, the addition of monochromatic wavelengths provides a clearer understanding of how each part of the visible spectrum affects plant growth. By growing Outredgeous lettuce under six treatments of White (W) LEDs, W + blue (B), W+ green (G), W + red (R), W + far red (FR), and RGB + FR LEDs with ratios similar to natural sunlight, this investigation has assessed differences in biomass, morphology, chlorophyll, and the synthesis of key phytonutrients. The potential for Outredgeous to produce anthocyanin, lutein, potassium, magnesium, and iron is paramount to maintaining astronaut health. The crop responses to each treatment have been evaluated and the optimal LED combination for both plant yield and nutrient content will be presented.
In order to improve the synthesis of GaN the effect of various growth and doping parameters has been studied. Although Be, Li, Mg, and Dy can be used to overcompensate native donors, the most interesting acceptor element is Zn. The emission spectrum and the luminescence efficiency depend on the growth temperature (below 800 C), on the partial pressure of the doping impurity, and on the duration of growth. Blue-green electroluminescence with a power efficiency of 0.1 percent and a brightness of 850 fL (at 0.6 mA and 22.5 V) was obtained. Some diodes allow the color of the emitted light to change by reversing the polarity of the bias. Continuous operation of a diode over a period of 5 months showed no evidence of degradation. The luminescence properties of ion-implanted GaN were studied. Delay effects were found in the electroluminescence of diodes, although, with a dc bias, a 70-MHz modulation was possible.
Irradiation effects on lasers and laser components, discussing damage to GaAs laser diode
The DSN noise adding radiometer (NAR) measurement accuracy is analyzed. The NAR capability is part of the precision power monitor function recently introduced in the DSN. The potential system noise temperature measurement accuracy is estimated to be about 1.5% with the 1 kelvin noise diode. Performance verification requires comparison noise temperature measurements with the manual Y factor method and routine monitoring of critical elements in the NAR system such as system linearity and noise diode calibration. A technique is presented to calibrate and reduce the effects of the receiving system nonlinearity. Unsatisfactory performance or degradation of these critical NAR elements would require appropriate system upgrading.
High forward-mode conductance is combined with rapid reverse-mode shutoff in a heat pipe originally developed to cool spacecraft payloads. A narrow orifice within the pipe "chokes off" the evaporator if heat sink becomes warmer than source. During normal operation, with source warmer than sink, orifice has little effect. Design is simpler and more compact than other thermal-diode heat pipes and requires no special materials, forgings, or unusual construction techniques.
Single-mode spectral behavior with aging in constricted double heterojunction (CDH) lasers was studied. The CDH lasers demonstrated excellent reliability ( or = 1 million years extrapolated room-temperature MTTF) and single-mode operation after 10,000 hours of 70 C aging. The deleterious effects of laser-fiber coupling on the spectra of the diodes were eliminated through the use of wedge-shaped fibers. A novel high-power large optical cavity (LOC)-type laser was developed: the terraced-heterostructure (TH)-LOC laser, which provides the highest power into a single-mode (i.e., 50 mW CW) ever reported.
A highly efficient Nd:YAG laser end-pumped by semiconductor lasers as a possible free-space optical communications source is discussed. Because this concept affords high pumping densities, a long absorption length, and excellent mode-matching characteristics, it is estimated that electrical-to-optical efficiencies greater than 5% could be achieved. Several engineering aspects such as resonator size and configuration, pump collecting optics, and thermal effects are also discussed. Finally, possible methods for combining laser-diode pumps to achieve higher output powers are illustrated.
The linestrengths for 40 absorption lines of H2 16-O water vapor that were located between 813 and 820 nm were measured; most of these lines were selected for their potential usefulness in laser remote measurements of atmospheric humidity using the differential absorption lidar technique. The air-induced pressure-broadening coefficients were also measured for 32 of these lines and the air-induced pressure shift coefficients were measured for 29 lines. These spectroscopic parameters were derived from spectra obtained with an AlGaAs diode laser and two long-path absorption cells. Collisional narrowing effects were observed and were accurately described by a Galatry profile. Comparisons were made with previous experimental work or theoretical calculations as available.