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Presented are lumped equivalent circuit models for several coplaar waveguide discontinuities such as an open circuit, a series gap, and a symmetric step, and their element values as a function of the discontinuity physical dimensions. The model element values are de-embedded from measured S parameters. The frequency dependence of the effective dielectric constant is measured and compared to computed values.
A waveguide split-block fixture used in the characterization of thin-film superconducting planar circuitry at millimeter wavelengths is described in detail. The test fixture is realized from a pair of mode converters, which transition from rectangular-waveguide to on-chip microstrip-line signal propagation via a stepped ridge-guide impedance transformer. The observed performance of the W-band package at 4.2K has a maximum in-band transmission ripple of 2dB between 1.53 and 1.89 times the waveguide cutoff frequency. This metrology approach enables the characterization of superconducting microstrip test structures as a function temperature and frequency. The limitations of the method are discussed and representative data for superconducting Nb and NbTiN thin film microstrip resonators on single-crystal Si dielectric substrates are presented.
A waveguide split-block fixture used in the characterization of thin-film superconducting planar circuitry at millimeter wavelengths is described in detail. The test fixture is realized from a pair of mode converters, which transition from rectangular-waveguide to on-chip microstrip-line signal propagation via a stepped ridge-guide impedance transformer. The observed performance of the W-band package at 4.2K has a maximum in-band transmission ripple of 2dB between 1.53 and 1.89 times the waveguide cutoff frequency. This metrology approach enables the characterization of superconducting microstrip test structures as a function temperature and frequency. The limitations of the method are discussed and representative data for superconducting Nb and NbTiN thin film microstrip resonators on single-crystal Si dielectric substrates are presented.
The properties of the arc discharges which are caused by the laboratory exposure of dielectric materials to electron beams are examined, the intent being to simulate conditions on synchronous-orbit spacecraft. Extensive experimental studies are reported for planar dielectrics (Teflon, Kapton, Mylar) on the subjects of incident-flux scaling of discharge properties and the effects of high-energy broad-spectrum electron irradiation from a radioisotpe source. In addition a preliminary evaluation is made of the discharge susceptibility of fiber optic waveguides.
Presented are lumped equivalent circuit models for several coplanar waveguide discontinuities such as an open circuit, a series gap, and a symmetric step, and their element values as a function of the discontinuity physical dimensions. The model element values are de-embedded from measured S-parameters. The frequency dependence of the effective dielectric constant was measured and compared to computed values.
High Temperature Superconductor/Ferroelectric (HTS/FE ) thin film multilayered structures deposited onto dielectric substrates are currently being investigated for use in low loss, tunable microwave components for satellite and ground based communications. The main goal for this technology is to achieve maximum tunability while keeping the microwave losses as low as possible, so as to avoid performance degradation when replacing conventional technology (e.g., filters and oscillators) with HTS/FE components. Therefore, for HTS/FE components to be successfully integrated into current working systems, full optimization of the material and electrical properties of the ferroelectric films, without degrading those of the HTS film; is required. Hence, aspects such as the appropriate type of ferroelectric and optimization of the deposition conditions (e.g., deposition temperature) should be carefully considered. The tunability range as well as the microwave losses of the desired varactor (i.e., tunable component) are also dependent on the geometry chosen (e.g., parallel plate capacitor, interdigital capacitor, coplanar waveguide, etc.). In addition, the performance of the circuit is dependent on the location of the varactor in the circuit and the biasing circuitry. In this paper, we will present our results on the study of the SrTiO3/YBa2Cu3O(7-delta)/LaAl03 (STO/YBCO/LAO) and the Ba(x)Sr(1-x)TiO3/YBa2Cu3O(7-delta)/LaAl03(BSTO/YBCO/ILAO) HTS/FE multilayered structures. We have observed that the amount of variation of the dielectric constant upon the application of a dc electric field is closely related to the microstructure of the film. The largest tuning of the STO/YBCO/LAO structure corresponded to single-phased, epitaxial STO films deposited at 800 C and with a thickness of 500 nm. Higher temperatures resulted in interfacial degradation and poor film quality, while lower deposition temperatures resulted in films with lower dielectric constants, lower tunabilities, and higher losses. For STO/LAO multilayer structures having STO film of similar quality we have observed that interdigital capacitor configurations allow for higher tunabilities and lower losses than parallel plate configurations, but required higher dc voltage. Results on the use of these geometries in working microwave components such as filters and stabilizing resonators for local oscillators (LO) will be discussed.
Ka-band MEMS switched line phase shifters implemented in finite ground coplanar waveguide are described in this paper. The phase shifters are constructed of single-pole double-throw (SPDT) switches with additional reference and phase offset transmission line lengths. The one- and two-bit phase shifters are fabricated on high resistivity (HR) silicon with a dielectric constant, Epsilon(sub T) = 11.7 and a substrate thickness, t = 500microns. The switching architectures integrated within the phase shifters consist of MEMS switches that are doubly anchored cantilever beam capacitive switches with additional high inductive sections (MEMS LC device). The SPDT switch is composed of a T-junction with a MEMS LC device at each output port. The one-bit phase shifter described in this paper has an insertion loss (IL) and return loss (RL) of 0.9 dB and 30 dB while the two-bit described has an IL and RL of 1.8 dB and 30 dB respectively. The one-bit phase shifter's designed offset phase is 22.5deg and actual measured phase shift is 21.8deg. The two-bit phase shifter's designed offset phase is 22.5deg, 45deg, and 67.5deg and the actual measured phase shifts are 21.4deg, 44.2deg, and 65.8deg, respectively.
Micro-electromechanical systems (MEMS) is an emerging technology for radio frequency (RF) systems because it has the potential to dramatically decrease loss and improve efficiency. In this paper, we address the design and fabrication of novel MEMS switches being developed at NASA Glenn Research Center. Two types of switches are being developed: a microstrip series single pole single throw (SPST) switch and a coplanar waveguide (CPW) series SPST and single pole double throw (SPDT) switches. These are being fabricated as an integral part of 50 Ohm microstrip and CPW RF integrated circuits using microfabrication techniques. The construction of the switch relies on a cantilever beam that is partially supported by a dielectric post. The cantilever beam is electro-magnetically actuated. To decrease stiction, a Si3N4 thin film is deposited over the contact area. Thus, when the switch is closed, the ON-state insertion loss is governed by the parallel plate capacitance formed by the two contacts. The isolation in the OFF-state is governed by the parasitic capacitance when the cantilever is in the up position. RF MEMS switches have been demonstrated with 80% lower insertion loss than conventional solid state devices (GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and Silicon PIN diodes) based switches. For example, a conventional GaAs five-bit phase shifter which is required for beam steering in a phased array antenna has approximately 7 dB of insertion loss at 26.5 GHz where as a comparable MEMS based phase shifter is expected to have only 2 dB of insertion loss. This translates into 56% lower power dissipation and therefore decreases the thermal load on the spacecraft and also reduces the power amplifier requirements. These benefits will enable NASA to build the next generation of deep space science crafts and micro/nano satellites.
The development of integrated horn antennas since their introduction in 1987 is reviewed. The integrated horn is fabricated by suspending a dipole antenna, on a thin dielectric membrane, in a pyramidal cavity etched in silicon. Recent progress has resulted in optimized low- and high-gain designs, with single and double polarization for remote-sensing and communication applications. A full-wave analysis technique has resulted in an integrated antenna with performance comparable to that of waveguide-fed corrugated-horn antennas. The integrated horn design can be extended to large arrays, for imaging and phased-array applications, while leaving plenty of room for the RF and IF processing circuitry. Theoretical and experimental results at microwave frequencies and at 90 GHz, 240 GHz, and 802 GHz are presented.
A facility that includes a probe station and a scanning open-ended waveguide probe for measuring near electromagnetic fields has been added to Glenn Research Center's suite of antenna-testing facilities, at a small fraction of the cost of the other facilities. This facility is designed specifically for nondestructive characterization of the radiation patterns of miniaturized microwave antennas fabricated on semiconductor and dielectric wafer substrates, including active antennas that are difficult to test in traditional antenna-testing ranges because of fragility, smallness, or severity of DC-bias or test-fixture requirements. By virtue of the simple fact that a greater fraction of radiated power can be captured in a near-field measurement than in a conventional far-field measurement, this near-field facility is convenient for testing miniaturized antennas with low gains.
Experimental measurements of coplanar waveguide (CPW) circuits atop thin films of ferroelectric Ba(x)Sr(1-x)TiO3 (BST) were made as a function bias from 0 to 200 V and frequency from 0.045 to 20 GHz. The resulting phase shifts are compared with method of moments electromagnetic simulations and a conformal mapping analysis to determine the dielectric constant of the BST films. Based on the correlation between the experimental and the modeled data, an analysis of the extent to which the electromagnetic simulators provide reliable values for the dielectric constant of the ferroelectric in these structures has been performed. In addition, to determine how well the modeled data compare with experimental data, the dielectric constant values were also compared to low frequency measurements of interdigitated capacitor circuits on the same films. Results of these comparisons will be presented.
We report on the design methodology of fix-tuned split-block waveguide balanced frequency triplers working at 300,600 and 900 GHz. They feature four to six GaAs Schottky planar diodes in a balanced configuration. A 6-anode 300 GHz tripler, a 6-anode 560 GHz tripler and a 4-anode 900 GHz tripler will be fabricated with JPL membrane technology in order to minimize dielectric loading and ensure accurate thickness of the substrate. A 4-anode 600 GHz tripler was fabricated with JPL substrateless technology that delivers 0.8-1.6mW in the 540-640 GHz band at room temperature. When cooled to l2OK this tripler delivers 2-4mW from 540 to 640 GHz.
The µ-Spec integrated spectrometer operating at ~500 GHz, employs thin film superconducting Nb microstrip transmission lines deposited directly on a thin (450 nm) single-crystal silicon dielectric. This single-crystal silicon layer is chosen as the dielectric layer due to its low intrinsic loss, with the goal of achieving both high- efficiency and precise phase control in a compact spectrometer architecture. To avoid roughening or etching through the thin single-crystal silicon dielectric a liftoff technique was developed for patterning these microstrip transmission lines and ground plane structures. This two- layer liftoff process was designed for use with sputter deposition and resulted in a US patent. Although this original technique provided precise control of linewidth, results of initial prototype spectrometer devices and separate diagnostic co-planer waveguide resonator devices showed that unexpected loss was being introduced due to the lift-off process. This extra loss was believed to be due to the “tails” (thin tapered regions) at the edge of the metal traces resulting from the sputtering process, as well as an amorphous oxide layer at the Nb-Si interface. We have since demonstrated an improved lift-off technique, which provides a clean metal-Si interface and removes the loss-inducing tails by a two-step selective etching method. This results in a decrease in microwave loss by more than an order of magnitude when measured in co-planar waveguide microwave resonator structures. We present these microwave test results and also SEM and TEM images of the microstrip interfaces and edge profiles before and after application of the improved process.
Micro-Spec is a compact submillimeter (350-700 GHz) spectrometer which uses low loss superconducting niobium microstrip transmission lines and a single-crystal silicon dielectric to integrate all of the components of a grating-analog spectrometer onto a single chip. Here we present details of the fabrication and design of a prototype Micro-Spec spectrometer with resolution, R64, where we use a high-yield single-flip wafer bonding process to realize instrument components on a 0.45 m single-crystal silicon dielectric. We discuss some of the electromagnetic design concerns (such as loss, stray-light, cross-talk, and fabrication tolerances) for each of the spectrometer components and their integration into the instrument as a whole. These components include a slot antenna with a silicon lens for optical coupling, a phase delay transmission line network, parallel plate waveguide interference region, and aluminum microstrip transmission line kinetic inductance detectors with extremely low cross-talk and immunity to stray light. We have demonstrated this prototype spectrometer with design resolution of R64. Given the optical performance of this prototype, we will also discuss the extension of this design to higher resolutions suitable for balloon-flight.
Multilayer dielectric reflector included in proposed surface-emitting, distributed-feedback, grating semiconductor laser (e.g., a GaAlAs device). Contributes to efficiency and output power of laser by reducing amount of light entering substrate, where wasted by absorption. Index of refraction in reflector sublayers alternates between higher and lower value. Higher value less than effective index of refraction of waveguide layer.
Periodic structures consisting of dielectric material, i.e. photonic crystals, are capable of prohibiting electromagnetic waves within frequency ranges referred to as bandgaps. This principle was first demonstrated with alternating slabs of material and later demonstrated with three-dimensional (3D) structures capable of reflecting waves from any incident angle. A number of potential applications for photonic bandgap structures exist, including loss-less sharp corner waveguides, fiber optics, and radome design. Further, many optical devices could benefit from the perfect-mirror behavior of photonic crystals.
Conventional silicon wafers have low resistivity and consequently unacceptably high value of dielectric attenuation constant. Microwave circuits for phased array antenna systems fabricated on these wafers therefore have low efficiency. By choosing a silicon substrate with sufficiently high resistivity it is possible to make the dielectric attenuation constant of the interconnecting microwave transmission lines approach those of GaAs or InP. In order for this to be possible, the transmission lines must be characterized. In this presentation, the effective dielectric constant (epsilon sub eff) and attenuation constant (alpha) of a slotline on high resistivity (5000 to 10 000 ohm-cm) silicon wafer will be discussed. The epsilon sub eff and alpha are determined from the measured resonant frequencies and the corresponding insertion loss of a slotline ring resonator. The results for slotline will be compared with microstrip line and coplanar waveguide.
Split-ring antennas made from optically transparent, electrically conductive films have been invented for applications in which there are requirements for compact antennas capable of operation over much or all of the frequency band from 1 to 10 GHz. Primary examples of such applications include wireless local-area networks and industrial, scientific, and medical (ISM) applications. These antennas can be conveniently located on such surfaces as those of automobile windows and display screens of diverse hand-held electronic units. They are fabricated by conventional printed-circuit techniques and can easily be integrated with solid-state amplifier circuits to enhance gain. The structure of an antenna of this type includes an antenna/feed layer supported on the top or outer face of a dielectric (e.g., glass) and, optionally, a ground layer on the bottom or inner face of the substrate. The ring can be in the form of either a conductive strip or a slot in the antenna/feed layer. The ring can be of rectangular, square, circular, elliptical, or other suitable shape and can be excited by means of a microstrip, slot line, or coplanar waveguide. For example, the antenna shown in the figure features a square conductive-strip split ring with a microstrip feed. In general, an antenna fed at its external boundary in the manner of this invention presents very high impedance, thereby creating an impedance-matching problem. Splitting the ring . that is, cutting a notch through the ring . offers a solution to the problem in that the notch fixes the location of maximum electric field, which location is directly related to the impedance. Thus, an excellent impedance match can be achieved through proper choice of the location of the notch. In geometric layout, such a ring antenna structure is typically between 1.4 and 1.3 the size of a patch antenna capable of operating in the same frequency range. This miniaturization of the antenna is desirable, not only because it contributes to overall miniaturization of equipment, but also because minimization of the extent of the optically transparent, electrically conductive film helps to minimize the electrical loss associated with the surface resistance ( 5 ohms per square) of the transparent, electrically conductive film material. Incidentally, even at 5 ohms per square, this surface resistance is significantly less than that of indium tin oxide film (typically > 25 ohms per square), which, heretofore has been the transparent, electrically conductive film material of choice. At the time of writing this article, information on the composition of the lower-resistance film used in the antennas of this invention was not available.