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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Humidity-Dependent Electrostatic Charge Decay on Dielectric Surface in Enclosed Volumes

Electrostatic surface charge decay is investigated to determine loss mechanisms, the effect of humidity, enclosure size, and material. This work focuses on charging dielectric and metal surfaces close to the electrical breakdown threshold in atmospheric air under humid and dry conditions. After initial charging to a maximum potential of roughly 30 kV, the associated surface charge is allowed to decay because of recombining with ions from the natural background, resulting in decay times ranging from minutes to hours to days. Spheres with a radius of 50 mm consisting of varying materials (PTFE and metal as referenced later) are charged and tested at relative humidity levels, RH, of 10%, 35%, and 64%. It was found that the ion-ion pair production rate and the enclosure size affected the measured charge decay rate. The impact of air convection on charge decay in the open air (no enclosure) is discussed. The humidity increased the rate of charge decay on the metal and dielectric spheres. For example, in the first 25 minutes after charging, the total charge on the PTFE sphere decreased to 66%or 50% from its initial value in the 10% and 35% RH tests, respectively. An equivalent generation rate is found for the ions in the enclosure, with 10 and 24 ion pairs cm −3 s −1 being generated at a 5% and 49% relative humidity, respectively.

42 ENGINEERING↗
DOE OSTI2023

High-Performance Passivating Contacts for Si PV Based on Engineered, Doped Nanopinholes through Dielectric Layers

We present a novel, industrially relevant method to fabricate high-performance poly-Si passivating contacts for Si PV. Passivating contacts based on SiOx/poly-Si layer stacks have been implemented in record-efficiency homojunction Si solar cells. In this technology, the carrier transport through a surface-passivating SiOx is enabled either by quantum-tunneling or nanopinholes. The doped poly-Si layer provides charge-carrier selectivity. Previously, the ISFH research group demonstrated a record 26.1% efficient Si homojunction cell, where transport pinholes in ~2 nm SiOx were produced by thermal breakdown at > 1000 degrees C, which is hard to control and is surface morphology-dependent. At room temperature, our new process uses electroless plating of Ag nanoparticles, followed by metal-assisted chemical etching. Nanogalvanic corrosion yields < 20 nm-wide nanopinholes in an insulating > 2 nm SiOx layer. The nanopinholes are filled by a heavily doped a-Si:H overlayer. We drive in the dopants into the Si wafer with subsequent high-temperature annealing. Preferential incorporation of dopants at pinhole locations results in nanoscale p+/n or n+/n junctions near the wafer interface. Each heavily-doped nanoscale pinhole junction collects and transports photogenerated carriers to the cell metal contacts. The density of the engineered nanopinholes can be tuned over a wide range which is critical for optimization of device performance. The same nanogalvanic corrosion principles can be applied to produce doped transport pinholes in well-passivating thick dielectric SiOx/SiNy stacks. Importantly, our process does not rely on thermal breakdown of the dielectric layers and can be applied to textured wafers resulting in Si solar cells with > 20% conversion efficiency.

dielectric layer↗
NASA NTRS2014

The Significance of Breakdown Voltages for Quality Assurance of Low-Voltage BME Ceramic Capacitors

Application of thin dielectric, base metal electrode (BME) ceramic capacitors for high-reliability applications requires development of testing procedures that can assure high quality and reliability of the parts. In this work, distributions of breakdown voltages (VBR) in variety of low-voltage BME multilayer ceramic capacitors (MLCCs) have been measured and analyzed. It has been shown that analysis of the distributions can indicate the proportion of defective parts in the lot and significance of the defects. Variations of the distributions after solder dip testing allow for an assessment of the robustness of capacitors to soldering-related stresses. The drawbacks of the existing screening and qualification methods to reveal defects in high-value, low-voltage MLCCs and the importance of VBR measurements are discussed. Analysis has shown that due to a larger concentration of oxygen vacancies, defect-related degradation of the insulation resistance (IR) and failures are more likely in BME compared to the precious metal electrode (PME) capacitors.

reliability↗
NASA NTRS2015

Spacecraft Charging Sensitivity to Material Properties

Evaluating spacecraft charging behavior of a vehicle in the space environment requires knowledge of the material properties relevant to the charging process. Implementing surface and internal charging models requires a user to specify a number of material electrical properties including electrical resistivity parameters (dark and radiation induced), dielectric constant, secondary electron yields, photoemission yields, and breakdown strength in order to correctly evaluate the electric discharge threat posed by the increasing electric fields generated by the accumulating charge density. In addition, bulk material mass density and/or chemical composition must be known in order to analyze radiation shielding properties when evaluating internal charging. We will first describe the physics of spacecraft charging and show how uncertainties in material properties propagate through spacecraft charging algorithms to impact the results obtained from charging models. We then provide examples using spacecraft charging codes to demonstrate their sensitivity to material properties. The goal of this presentation is to emphasize the importance in having good information on relevant material properties in order to best characterize on orbit charging threats.

Minow, Joseph I.↗
DOE OSTI2025

Electrical and structural characterization of in situ MOCVD Al2O3/β-Ga2O3 and Al2O3/β-(AlxGa1−x)2O3 MOSCAPs

This study investigates the electrical and structural properties of metal–oxide–semiconductor capacitors (MOSCAPs) with in situ metal-organic chemical vapor deposition-grown Al2O3 dielectrics deposited at varying temperatures on (010) β-Ga2O3 and β-(AlxGa1−x)2O3 films with different Al compositions. The Al2O3/β-Ga2O3 MOSCAPs exhibited a strong dependence of electrical properties on Al2O3 deposition temperature. At 900 °C, reduced voltage hysteresis (∼0.3 V) with improved reverse breakdown voltage (74.5 V) was observed, corresponding to breakdown fields of 5.01 MV/cm in Al2O3 and 4.11 MV/cm in β-Ga2O3 under reverse bias. In contrast, 650 °C deposition temperature resulted in higher voltage hysteresis (∼3.44 V) and lower reverse breakdown voltage (38.8 V) with breakdown fields of 3.69 and 2.87 MV/cm in Al2O3 and β-Ga2O3, respectively, but exhibited impressive forward breakdown field, increasing from 5.62 MV/cm at 900 °C to 7.25 MV/cm at 650 °C. High-resolution scanning transmission electron microscopy (STEM) revealed improved crystallinity and sharper interfaces at 900 °C, contributing to enhanced reverse breakdown performance. For Al2O3/β-(AlxGa1−x)2O3 MOSCAPs, increasing Al composition (x) from 5.5% to 9.2% reduced net carrier concentration and improved reverse breakdown field contributions from 2.55 to 2.90 MV/cm in β-(AlxGa1−x)2O3 and 2.41 to 3.13 MV/cm in Al2O3. The electric field in Al2O3 dielectric under forward bias breakdown also improved from 5.0 to 5.4 MV/cm as Al composition increased from 5.5% to 9.2%. The STEM imaging confirmed the compositional homogeneity and excellent stoichiometry of both Al2O3 and β-(AlxGa1−x)2O3 layers. These findings demonstrate the robust electrical performance, high breakdown fields, and excellent structural quality of Al2O3/β-Ga2O3 and Al2O3/β-(AlxGa1−x)2O3 MOSCAPs, highlighting their potential for high-power electronic applications.

Bhuiyan, A. F. M. Anhar Uddin (ORCID:0000000334212↗
NASA NTRS2008

Scintillation Breakdowns in Chip Tantalum Capacitors

Scintillations in solid tantalum capacitors are momentarily local breakdowns terminated by a self-healing or conversion to a high-resistive state of the manganese oxide cathode. This conversion effectively caps the defective area of the tantalum pentoxide dielectric and prevents short-circuit failures. Typically, this type of breakdown has no immediate catastrophic consequences and is often considered as nuisance rather than a failure. Scintillation breakdowns likely do not affect failures of parts under surge current conditions, and so-called "proofing" of tantalum chip capacitors, which is a controllable exposure of the part after soldering to voltages slightly higher than the operating voltage to verify that possible scintillations are self-healed, has been shown to improve the quality of the parts. However, no in-depth studies of the effect of scintillations on reliability of tantalum capacitors have been performed so far. KEMET is using scintillation breakdown testing as a tool for assessing process improvements and to compare quality of different manufacturing lots. Nevertheless, the relationship between failures and scintillation breakdowns is not clear, and this test is not considered as suitable for lot acceptance testing. In this work, scintillation breakdowns in different military-graded and commercial tantalum capacitors were characterized and related to the rated voltages and to life test failures. A model for assessment of times to failure, based on distributions of breakdown voltages, and accelerating factors of life testing are discussed.

Teverovsky, Alexander↗
NASA NTRSDate not supplied

Space Charge Analysis Capabilities for the Evaluation of High Voltage Insulation Materials

Materials development is crucial for the advancement of electric aviation. Current research focusing on novel multifunctional materials is underway to solve the needs for aerospace systems; however, additional testing of these materials to understand their failure modes is equally critical. This project will utilize pulsed electroacoustic (PEA) instrumentation to investigate space charge accumulation of multifunctional composites and other insulation materials critical to robust high power transmission systems. Evaluating the space charge phenomena in dielectric materials will provide unique and fundamentally necessary data to determine the feasibility and lifetime of any high voltage insulation system. When electrical charge is injected into a solid dielectric, charge can accumulate and become trapped, leading to the failure of the insulation via breakdown or arcing events. This study will discuss the pulsed electroacoustic methodology and its use on evaluating various dielectric polymer and composite films.

pulsed electroacoustic↗
NASA NTRS1992

Evaluation of high temperature capacitor dielectrics

Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

Hammoud, Ahmad N.↗
NASA NTRS2011

Internal Electrostatic Discharge Monitor - IESDM

A document discusses an innovation designed to effectively monitor dielectric charging in spacecraft components to measure the potential for discharge in order to prevent damage from internal electrostatic discharge (IESD). High-energy electrons penetrate the structural materials and shielding of a spacecraft and then stop inside dielectrics and keep accumulating. Those deposited charges generate an electric field. If the electric field becomes higher than the breakdown threshold (approx. =2 x 10(exp 5) V/cm), discharge occurs. This monitor measures potentials as a function of dielectric depth. Differentiation of potential with respect to the depth yields electric field. Direct measurement of the depth profile of the potential in a dielectric makes real-time electronic field evaluation possible without simulations. The IESDM has been designed to emulate a multi-layer circuit board, to insert very thin metallic layers between the dielectric layers. The conductors serve as diagnostic monitoring locations to measure the deposited electron-charge and the charge dynamics. Measurement of the time-dependent potential of the metal layers provides information on the amount of charge deposited in the dielectrics and the movement of that charge with time (dynamics).

Kim, Wousik↗
NASA NTRS2012

Some Aspects of the Failure Mechanisms in BaTiO3-Based Multilayer Ceramic Capacitors

The objective of this presentation is to gain insight into possible failure mechanisms in BaTiO3-based ceramic capacitors that may be associated with the reliability degradation that accompanies a reduction in dielectric thickness, as reported by Intel Corporation in 2010. The volumetric efficiency (microF/cm3) of a multilayer ceramic capacitor (MLCC) has been shown to not increase limitlessly due to the grain size effect on the dielectric constant of ferroelectric ceramic BaTiO3 material. The reliability of an MLCC has been discussed with respect to its structure. The MLCCs with higher numbers of dielectric layers will pose more challenges for the reliability of dielectric material, which is the case for most base-metal-electrode (BME) capacitors. A number of MLCCs manufactured using both precious-metal-electrode (PME) and BME technology, with 25 V rating and various chip sizes and capacitances, were tested at accelerated stress levels. Most of these MLCCs had a failure behavior with two mixed failure modes: the well-known rapid dielectric wearout, and so-called 'early failures." The two failure modes can be distinguished when the testing data were presented and normalized at use-level using a 2-parameter Weibull plot. The early failures had a slope parameter of Beta >1, indicating that the early failures are not infant mortalities. Early failures are triggered due to external electrical overstress and become dominant as dielectric layer thickness decreases, accompanied by a dramatic reduction in reliability. This indicates that early failures are the main cause of the reliability degradation in MLCCs as dielectric layer thickness decreases. All of the early failures are characterized by an avalanche-like breakdown leakage current. The failures have been attributed to the extrinsic minor construction defects introduced during fabrication of the capacitors. A reliability model including dielectric thickness and extrinsic defect feature size is proposed in this presentation. The model can be used to explain the Intel-reported reliability degradation in MLCCs with respect to the reduction of dielectric thickness. It can also be used to estimate the reliability of a MLCC based on its construction and microstructure parameters such as dielectric thickness, average grain size, and number of dielectric layers. Measures for preventing early failures are also discussed in this document.

Liu, David Donhang↗
DOE OSTI2020

Photonic curing of solution-deposited ZrO 2 dielectric on PEN: a path towards high-throughput processing of oxide electronics

High-throughput manufacturing of oxide electronics will enable new applications ranging from large-area displays to flexible medical devices and low-cost solar panels. However, high quality oxide films from solution-based precursors typically require 20 minutes or more of thermal annealing at high temperature (> 250 °C) for each layer, severely limiting both the throughput and substrate choice. Here, we report high speed photonic curing of ZrO 2 dielectric thin films on flexible plastic substrates. The curing and patterning processes can be achieved simultaneously by using shadow mask patterning or adjusting conditions to convert oxide only on top of underlying metal contacts, i.e. self-aligned patterning. Metal-insulator-metal capacitors using two layers of ZrO 2 films photonically cured in just 100 seconds per layer show non-dispersive capacitance-frequency behavior from 10 2 to 10 6 Hz, high areal capacitance of 200 nF/cm 2 and low dissipation factor of 0.03 at 10 5 Hz, leakage current density of ~ 10 -7 A/cm 2 at an applied field of 2 MV/cm, and a breakdown field of nearly 8 MV/cm. Using an upgraded tool, similar dielectric properties are achieved in as short as 100 milliseconds using a single pulse of light, revealing a pathway to oxide film processing beyond 30 m/min.

14 SOLAR ENERGY↗
NASA NTRS2021

Breakdown in Tantalum Capacitors

Failures in tantalum capacitors can be considered as a time-dependent-breakdown and reliability of all types of capacitors, including wet, MnO2 and polymer cathode parts, depends on the efficiency of self-healing that can mend parts after breakdown. A mechanism of self-healing in MnO2 capacitors is associated with oxygen reduction in the cathode layer and isolation of the breakdown site with high-resistive Mn2O3/Mn3O4 compositions. Although this mechanism is commonly accepted, details of self-healing have not been analyzed sufficiently yet, and the effects of scintillations on behavior of the parts has not been fully understood. There is a lack of data on the self-healing efficiency in different lots of capacitors. Even less is known about self-healing in polymer tantalum capacitors. In this work, different types of polymer and MnO2 capacitors have been tested for scintillation breakdown using a constant current stress (CCS) technique modified to allow detection of the amplitudes and durations of current spikes during breakdown. Characteristics of the parts and in particular leakage currents were measured to assess the efficiency of self-healing and improve screening processes for tantalum capacitors. Damaged sites were localized using infrared camera and their appearance analyzed after deprocessing and crosssectioning. Thermal effects during scintillations have been modeled, self-healing processes in polymer and MnO2 cathode capacitors discussed, and mechanisms of breakdown based on the growth of conductive filaments in the dielectric suggested.

tantalum polymer capacitors↗
DOE OSTI2020

Radio frequency and DC high voltage breakdown of high pressure helium, argon, and xenon

Motivated by the possibility of guiding daughter ions from double beta decay events to single-ion sensors for barium tagging, the NEXT collaboration is developing a program of R&D to test radio frequency (RF) carpets for ion transport in high pressure xenon gas. This would require carpet functionality in regimes at higher pressures than have been previously reported, implying correspondingly larger electrode voltages than in existing systems. This mode of operation appears plausible for contemporary RF-carpet geometries due to the higher predicted breakdown strength of high pressure xenon relative to low pressure helium, the working medium in most existing RF carpet devices. In this paper we present the first measurements of the high voltage dielectric strength of xenon gas at high pressure and at the relevant RF frequencies for ion transport (in the 10 MHz range), as well as new DC and RF measurements of the dielectric strengths of high pressure argon and helium gases at small gap sizes. We find breakdown voltages that are compatible with stable RF carpet operation given the gas, pressure, voltage, materials and geometry of interest.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1979

NASCAP modelling of high-voltage power system interactions with space charged-particle environments

A simple space power system operating in geosynchronous orbit was analyzed. This system consisted of two solar array wings and a central body. Each solar array wing was considered to be divided into three regions operating at 2000 volts. The center body was considered to be an electrical ground with the array voltages both positive and negative relative to ground. The system was analyzed for both a normal environment and a moderate geomagnetic substorm environment. Initial results indicate a high probability of arcing at the interconnects on the negative operating voltage wing. The dielectric strength of the substrate may be exceeded giving rise to breakdown in the bulk of the material. The geomagnetic substorm did not seem to increase the electrical gradients at the interconnects on the negative operating voltage wing but did increase the gradients on the positive operating voltage wing which could result in increased coupling current losses.

Stevens, N. J.↗
DOE OSTI2024

Enhancements of electric field and afterglow of non-equilibrium plasma by Pb(ZrxTi1−x)O3 ferroelectric electrode

Abstract Manipulating surface charge, electric field, and plasma afterglow in a non-equilibrium plasma is critical to control plasma-surface interaction for plasma catalysis and manufacturing. Here, we show enhancements of surface charge, electric field during breakdown, and afterglow by ferroelectric barrier discharge. The results show that the ferroelectrics manifest spontaneous electric polarization to increase the surface charge by two orders of magnitude compared to discharge with an alumina barrier. Time-resolved in-situ electric field measurements reveal that the fast polarization of ferroelectrics enhances the electric field during the breakdown in streamer discharge and doubles the electric field compared to the dielectric barrier discharge. Moreover, due to the existence of surface charge, the ferroelectric electrode extends the afterglow time and makes discharge sustained longer when alternating the external electric field polarity. The present results show that ferroelectric barrier discharge offers a promising technique to tune plasma properties for efficient plasma catalysis and electrified manufacturing.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS2017

Relationship of Cure Temperature to Mechanical, Physical, and Dielectric Performance of PDMS Glass Composite for Electric Motor Insulation

Achieving NASAs aggressive fuel burn and emission reduction for N-plus-3 aircraft will require hybrid electric propulsion system in which electric motors driven by either power generated from turbine or energy storage system will power the fan for propulsion. Motors designed for hybrid electric aircraft are expected to operate at medium to high voltages over long durations in a high altitude service environment. Such conditions have driven research toward the development of wire insulation with improved mechanical strength, thermal stability and increased breakdown voltage. The silicone class of materials has been considered for electric wire insulation due to its inherent thermal stability, dielectric strength and mechanical integrity. This paper evaluates the dependence of these properties on the cure conditions of a polydimethyl-siloxane (PDMS) elastomer; where both cure temperature and base-to-catalyst ratio were varied. The PDMS elastomer was evaluated as a bulk material and an impregnation matrix within a lightweight glass veil support. The E-glass support was selected for mechanical stiffness and dielectric strength. This work has shown a correlation between cure conditions and material physical properties. Tensile strength increased with cure temperature whereas breakdown voltage tended to be independent of process variations. The results will be used to direct material formulation based on specific insulation requirements.

insulation↗