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All sources NASA NTRS DOE OSTI

DOE OSTI2022

GaN HEMT Fabrication for Radiation-Hardened Sensing and Communications Electronics

Gallium nitride (GaN), a wide bandgap semiconductor, has vast potential to address two environment conditions associated with the application of electronics to nuclear power: elevated temperatures, and high levels of radiation. A process was developed at The Ohio State University (OSU) to enable fabrication of complex digital and analog electronics circuits for application to nuclear power environments such as locations near or in the reactor core or in spent nuclear fuel casks. Radio frequency (RF)-grade GaN high electron mobility transistor (HEMT) devices were fabricated as part of this process. These were fabricated as depletion mode and enhancement mode devices. They have been electrically characterized and have demonstrated the expected performance. Behavioral models (Verilog-A) were developed from these device measurements to enable electrical simulation of GaN HEMT devices and circuits using common electronics simulation tools based on Simulation Program with Integrated Circuit Emphasis (SPICE). A similar set of GaN HEMT devices is being developed to provide lower speed devices for logic and analog functions. These accomplishments position this technology for effective application to sensor interfacing, signal processing, and data communications in nuclear power plants, including operation in or near the reactor core.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗

DOE OSTI2022

High‐Efficiency Solar Cells Grown on Spalled Germanium for Substrate Reuse without Polishing

Abstract Radical reduction of III–V device costs requires a multifaceted approach attacking both growth and substrate costs. Implementing device removal and substrate reuse provides an opportunity for substrate cost reduction. Controlled spalling allows removal of thin devices from the expensive substrate; however, the fracture‐based process currently generates surfaces with significant morphological changes compared to polished wafers. 49 single junction devices are fabricated across the spalled surface of full 50 mm germanium wafers without chemo‐mechanical polishing before epitaxial growth. Device defects are identified and related to morphological spalling defects—arrest lines, gull wings, and river lines—and their impact on cell performance using physical and functional characterization techniques. River line defects have the most consistent and detrimental effect on cell performance. Devices achieve a single junction efficiency above 23% and open‐circuit voltage of 1.01 V, demonstrating that spalled germanium does not need to be returned to a pristine, polished state to achieve high‐quality device performance.

14 SOLAR ENERGY↗

DOE OSTI2024

Exploring the effects of molecular beam epitaxy growth characteristics on the temperature performance of state-of-the-art terahertz quantum cascade lasers

This study conducts a comparative analysis, using non-equilibrium Green’s functions (NEGF), of two state-of-the-art two-well (TW) Terahertz Quantum Cascade Lasers (THz QCLs) supporting clean 3-level systems. The devices have nearly identical parameters and the NEGF calculations with an abrupt-interface roughness height of 0.12 nm predict a maximum operating temperature (T max ) of ~ 250 K for both devices. However, experimentally, one device reaches a T max of ~ 250 K and the other a T max of only ~ 134 K. Both devices were fabricated and measured under identical conditions in the same laboratory, with high quality processes as verified by reference devices. The main difference between the two devices is that they were grown in different MBE reactors. Our NEGF-based analysis considered all parameters related to MBE growth, including the maximum estimated variation in aluminum content, growth rate, doping density, background doping, and abrupt-interface roughness height. From our NEGF calculations it is evident that the sole parameter to which a drastic drop in T max could be attributed is the abrupt-interface roughness height. We can also learn from the simulations that both devices exhibit high-quality interfaces, with one having an abrupt-interface roughness height of approximately an atomic layer and the other approximately a monolayer. However, these small differences in interface sharpness are the cause of the large performance discrepancy. This underscores the sensitivity of device performance to interface roughness and emphasizes its strategic role in achieving higher operating temperatures for THz QCLs. We suggest Atom Probe Tomography (APT) as a path to analyze and measure the (graded)-interfaces roughness (IFR) parameters for THz QCLs, and subsequently as a design tool for higher performance THz QCLs, as was done for mid-IR QCLs. Our study not only addresses challenges faced by other groups in reproducing the record T max of ~ 250 K and ~ 261 K but also proposes a systematic pathway for further improving the temperature performance of THz QCLs beyond the state-of-the-art.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2022

Spatial influence of paramagnetic molecules on magnetic tunnel junction-based molecular spintronic devices (MTJMSD)

Magnetic Tunnel Junction-Based Molecular Spintronic Devices (MTJMSDs) are potential candidates for inventing highly correlated systems. Understanding MTJMSD's magnetic behavior is essential to designing and fabricating practical devices. This paper investigates the effect of two contributing factors on MTJMSD's magnetic properties via Monte Carlo Simulation. Here, we have systematically studied coupling strengths and nature between magnetic molecules and ferromagnetic electrodes at various temperatures. We have also investigated the effect of length and thickness increase on MTJMSD temporal and spatial evolution of magnetic moment, magnetic correlation, and magnetic susceptibility. Our results showed that thermal energy increase significantly affects molecular devices.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2024

DuraMAT: Building a Consortium to Accelerate the Photovoltaic Module Reliability Learning Cycle

Durable and reliable photovoltaic (PV) modules are critical to enabling an efficient transition to sustainable energy generation. The rate at which new module designs and materials are developed and deployed currently outpaces the rate at which we can identify failure mechanisms and understand degradation rates. Increasing the service life of PV modules, and our ability to predict performance over time, requires more durable materials and designs, better durability testing, more extensive material characterization, robust modeling, and methods to cross-examine historical performance data to extract meaningful results. This is a multidisciplinary challenge that requires expertise from a broad range of fields and, therefore, benefits significantly from a collaborative approach. In this Perspective, we outline the approach taken by the Durable Module Materials Consortium (DuraMAT), present a few case studies where our approach was successful, and provide an outlook on where this approach might be applied as the PV technology landscape continues to rapidly evolve. Published by the American Physical Society 2024

14 SOLAR ENERGY↗

DOE OSTI2022

Characterization of Low Gain Avalanche Detector Prototypes’ Response to Gamma Radiation

Motivated by the need for fast timing detectors to withstand up to 2 MGy of ionizing dose at the High Luminosity Large Hadron Collider, prototype low gain avalanche detectors (LGADs) have been fabricated in a single pad configuration, 2 × 2 arrays, and related p-i-n diodes, and exposed to Co-60 sources for study. Devices were fabricated with a range of dopant layer concentrations, and for the arrays, a variety of inter-pad distances and distances from the active area to the edge. Measurements of capacitance versus voltage and leakage current versus voltage have been made to compare pre- and post-irradiation characteristics in gain layer depletion voltage, full bulk depletion voltage, and breakdown voltage. Conclusions are drawn regarding the effects of the gammas on both surface and interface states and on their contribution to acceptor removal through non-ionizing energy loss from Compton electrons or photoelectrons. Comparison of the performances of members of the set of devices can be used to optimize gain layer parameters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2020

Fabrication of multilayered carbon MEMS devices

The various technologies presented herein relate to formation of carbon micromechanical systems (CMEMS), wherein the CMEMS comprise multiple layers of carbon structures and are formed using a plurality of photoresist precursors that are processed to form carbon. The various embodiments can be utilized in producing a plurality of CMEMS with full production level fabrication, e.g., 6 inch wafers can be processed. A pyrolyzed layer of carbon is lithographically defined after pyrolysis, wherein the post-pyrolysis etch process can produce carbon structures having repeatable and accurate device geometries, with straight sidewalls. A sacrificial layer can be applied to facilitate separation of a first carbon layer from a second carbon layer, wherein, upon pyrolysis to form the second carbon layer and lithography thereof, the sacrificial layer is removed to form a CMEMS comprising a first carbon layer (e.g., comprising bottom contacts) located beneath a second carbon layer (e.g., a mechanical layer).

36 MATERIALS SCIENCE↗

DOE OSTI2025

Monocrystalline CdSeTe/MgCdTe Double‐Heterostructure Solar Cells

This article reports monocrystalline CdSeTe/MgCdTe double‐heterostructure (DH) solar cells with varying Se compositions in the absorber layers that are grown on InSb substrates by using molecular beam epitaxy. The Se composition in the samples studied is determined to be 4%–11% through high‐resolution X‐ray diffraction (XRD) and photoluminescence measurements. Increased Se incorporation induces higher defect density attributed to increased lattice mismatch, and mixed‐phase formation due to the small difference in formation energies between the wurtzite and zinc blende phases of CdSe, which causes stacking faults and grain boundaries. Devices are fabricated by directly depositing an n‐type indium tin oxide (ITO) layer on the CdSeTe/MgCdTe DHs followed by Ag metal contacts. Reduced bandgap is observed in solar cells with increased Se composition. The devices with an absorber containing 4% Se exhibit an average open‐circuit voltage ( V OC ) of 0.925 V, a short‐circuit current density ( J SC ) of 23.4 mA/cm 2 , a fill factor ( FF ) of 0.650 and an efficiency of 14.1% without anti‐reflection coating. Absorbers with higher Se compositions result in poor device performance, mainly attributed to high defect density in the materials.

Ju, Zheng [Center for Photonics Innovation Arizona↗

DOE OSTI2023

Design and Fabrication of Quantum Information Processing Devices (Final Report)

The goal of this work is to develop a wideband Josephson Parametric Amplifier (JPA) by the combination of a coplanar impedance transformer and a lumped Josephson Parametric Amplifier. Josephson Parametric Amplifiers take advantage of the nonlinear inductance of Josephson junctions and the nearly lossless superconductor circuits to achieve wave mixing and amplification with only quantum-limited added noise, which makes it a key component in quantum measurements, such as single-shot qubit measurement. However, the current JPAs generally have a relatively high quality factor and small bandwidth (around 50MHz to 100MHz), which limits their ability in measuring signals from a broad spectrum. Therefore, the work planned to use a coplanar impedance transformer to enhance the coupling between JPA and the signals, resulting in a small quality factor and large bandwidth. By decreasing the quality factor of JPA to around 3, one can achieve around 20dB gain within a bandwidth of several hundred MHz. Moreover, the wideband feature allows this device to explore the frequency dependence of the coupling between the JPA and the signals. Because the impedance transformer is based on a coplanar transmission line and requires no modifications of the lumped JPA, it is relatively straightforward to embed it in the current fabrication, package, and testing process for lumped JPA. The impedance transformer can be fabricated by liftoff or etching process with the lumped JPA together, which adds no fabrication complexity. The only difference is the size, which is around 3~5 times larger than lumped JPA. This may make the number of available chips on a single wafer lower. As for the public benefits, the development of this wideband JPA will make it possible to use just a single JPA device for multi-frequency signals, for example, the readout signals of a superconducting qubit chip with multiplexed readout bus. This would greatly decrease the demand for JPAs in quantum measurements.

42 ENGINEERING↗

DOE OSTI2020

Characterization of Transition Edge Sensors for the Simons Observatory

The Simons Observatory is building both large (6 m) and small (0.5 m) aperture telescopes in the Atacama Desert in Chile to observe the cosmic microwave background CMB radiation with unprecedented sensitivity. Simons Observatory telescopes in total will use over 60,000 transition edge sensor (TES) detectors spanning center frequencies between 27 and 285 GHz and operating near 100 mK. TES devices have been fabricated for the Simons Observatory by NIST, Berkeley, and HYPRES/SeeQC corporation. Iterations of these devices have been tested cryogenically in order to inform the fabrication of further devices, which will culminate in the final TES designs to be deployed in the field. The detailed design specifications have been independently iterated at each fabrication facility for particular detector frequencies. We present test results for prototype devices, with emphasis on NIST high frequency detectors. A dilution refrigerator was used to achieve the required temperatures. Measurements were taken both with 4-lead resistance measurements and with a time-domain Superconducting Quantum Interference Device (SQUID) multiplexer system. The SQUID readout measurements include analysis of current versus voltage (IV) curves at various temperatures, square wave bias step measurements, and detector noise measurements. Lastly, normal resistance, superconducting critical temperature, saturation power, thermal and natural time constants, and thermal properties of the devices are extracted from these measurements.

47 OTHER INSTRUMENTATION↗

DOE OSTI2022

An Accurate, Error-Tolerant, and Energy-Efficient Neural Network Inference Engine Based on SONOS Analog Memory

In this work, we demonstrate SONOS (silicon-oxide-nitrideoxide- silicon) analog memory arrays that are optimized for neural network inference. The devices are fabricated in a 40nm process and operated in the subthreshold regime for in-memory matrix multiplication. Subthreshold operation enables low conductances to be implemented with low error, which matches the typical weight distribution of neural networks, which is heavily skewed toward near-zero values. This leads to high accuracy in the presence of programming errors and process variations. We simulate the end-to-end neural network inference accuracy, accounting for the measured programming error, read noise, and retention loss in a fabricated SONOS array. Evaluated on the ImageNet dataset using ResNet50, the accuracy using a SONOS system is within 2.16% of floating-point accuracy without any retraining. The unique error properties and high On/Off ratio of the SONOS device allow scaling to large arrays without bit slicing, and enable an inference architecture that achieves 20 TOPS/W on ResNet50, a >10× gain in energy efficiency over state-of-the-art digital and analog inference accelerators.

97 MATHEMATICS AND COMPUTING↗

DOE OSTI2024

Advancing the Understanding of Manufacturing Tools for Hardware Security

This project’s goal was to explore new methods and tools to evaluate the focused ion beam (FIB) effect on active electrical devices, which is becoming increasingly challenged by the continual decrease in transistor geometry. Novel hole transfer methods leveraging FIB patterning were demonstrated utilizing selective area atomic layer deposition (ALD) and metal assisted chemical etching. A FIB damage electrical tester device was fabricated, and the effects of FIB beams were characterized by examining change in performance of damaged transistors. Detailed characterization of end-of-range damage for common FIB ions were correlated to modeling methods. Finally, undamaged and damaged devices were simulated by Charon to begin understanding the FIB effects on active devices. This test platform along with modeling methods give a powerful way to assess FIB damage in materials and devices, and with more development can help establish methods to predict FIB damage effects on electrical devices.

42 ENGINEERING↗

DOE OSTI2025

Triangular cross-section grating couplers for integrated quantum nanophotonic hardware in silicon carbide

We design, fabricate, and characterize fishbone grating couplers for triangular cross-section photonics in silicon carbide compatible with color center integration. The periodic and aperiodic grating coupler designs are optimized to outcouple up to 31% of light in the fundamental TE mode of a triangular waveguide. The devices are fabricated using an ion beam etching process in a 4H–SiC sample implanted with NV center ensembles. The room-temperature transmission and the cryogenic NV center photoluminescence collection measurements indicate experimental grating coupler efficiency of up to 24%. This result provides a scalable method to efficiently extract color center light from SiC quantum nanophotonic devices to free-space optics.

Saha, Pranta↗

DOE OSTI2023

Aerosol-Jet Printed Sensors for Environmental, Safety, and Health Monitoring: A Review

An emergent direct-write approach, aerosol-jet printing (AJP), is gaining attention for the deployment of rapid and affordable microadditively manufactured energy-efficient sensors and printed electronics. AJP enables a broad range of ink viscosities (0.001–1 Pa s) for printing diverse materials ranging from ceramics and metals to polymers and biological matter. Reproducible, high-spatial-resolution features (≈10 µm), and wide standoff distances (1–11 mm) between the nozzle and the substrate facilitate conformal printing of complex geometrical designs on nonplanar—e.g., stepped or curved—surfaces. Here this paper aims to provide a comprehensive overview of state-of-the-art AJP-based sensors (e.g., strain and temperature gauges, biosensors, photosensors, humidity and surface acoustic wave sensors, dielectric elastomer actuators, and motion, smoke, and hazardous gas detectors) and to discuss prospective applications. The drive toward cost-effective devices that are smaller, lighter, and better-performing remains a frontier challenge in the field of printed electronics. Consequently, as AJP becomes increasingly utilized in the high-volume manufacturing of miniaturized active and passive sensors, it opens a pathway for facile large-scale fabrication of devices for a wide range of consumer and industrial applications, including transportation, agriculture, infrastructure, aerospace, national defense, and healthcare.

3-dimensional↗

DOE OSTI2025

Predicting Trends in VOC Through Rapid, Multimodal Characterization of State-of-the-Art p-i-n Perovskite Devices

Perovskite photovoltaic technologies are approaching commercial deployment, yet single junction and tandem architectures both still have significant room to improve power conversion efficiency and stability. The ability to perform rapid screening of material quality after altering processing conditions is critical to accelerating the optimization and commercialization of perovskite-based technologies. Currently, researchers utilize a wide range of stand-alone metrology tools to isolate sources of power loss throughout a device stack, which can be slow and labor intensive. Here, we demonstrate the use of a multimodal metrology approach to rapidly determine the maximum achievable and predicted open circuit voltages of >100 perovskite devices during fabrication. Acquisition of these different data is facilitated by combining them into a single integrated measurement platform. We show that these data and automated analysis can be used to rapidly understand and ultimately predict quantitative trends in open circuit voltages of state-of-the-art device architectures. The data and automated analysis workflow presented provides a reliable approach to quickly identify absorber and charge transport layer combinations that can lead to improved open circuit voltages.

14 SOLAR ENERGY↗

DOE OSTI2024

Effect of Substrate Temperature on the Electrochemical and Supercapacitance Properties of Pulsed Laser-Deposited Titanium Oxynitride Thin Films

Electrocatalytically active titanium oxynitride (TiNO) thin films were fabricated on commercially available titanium metal plates using a pulsed laser deposition method for energy storage applications. The elemental composition and nature of bonding were analyzed using X-ray photoelectron spectroscopy (XPS) to reveal the reacting species and active sites responsible for the enhanced electrochemical performance of the TiNO electrodes. Symmetric supercapacitor devices were fabricated using two TiNO working electrodes separated by an ion-transporting layer to analyze their real-time performance. The galvanostatic charge–discharge studies on the symmetric cell have indicated that TiNO films deposited on the polycrystalline titanium plates at lower temperatures are superior to TiNO films deposited at higher temperatures in terms of storage characteristics. For example, TiNO films deposited at 300 °C exhibited the highest specific capacity of 69 mF/cm 2 at 0.125 mA/cm 2 with an energy density of 7.5 Wh/cm 2 . The performance of this supercapacitor (300 °C TiNO) device is also found to be ~22% better compared to that of a 500 °C TiNO supercapacitor with a capacitance retention ability of 90% after 1000 cycles. Furthermore, the difference in the electrochemical storage and capacitance properties is attributed to the reduced leaching away of oxygen from the TiNO films by the Ti plate at lower deposition temperatures, leading to higher oxygen content in the TiNO films and, consequently, a high redox activity at the electrode/electrolyte interface.

30 DIRECT ENERGY CONVERSION↗

DOE OSTI2026

Toward Lithium Recovery Using Modular (and Membraneless) Phase Separation and Extraction (MPSE) Technology with Ionic Liquid (IL) Solvents: Effect of Coatings

In this work, a single-channel slope-plate Modular and Membrane-less Phase Separation and Extraction (MPSE) device was fabricated using 3D printing. The slope-plate was designed with an insertable glass slide to enable surface modification with coatings. Self-assembled monolayers (SAMs) and perfluoropolyether (Zdol) coatings were applied to tailor surface wettability and enhance phase separation. Using a model biphasic system of water and hexadecane, both coatings significantly improved the separation efficiency compared to the uncoated device by promoting selective wetting. Building on these results, lithium extraction from a simulated saline solution was investigated using 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][NTf₂]) as the ionic liquid (IL) extractant. The IL effectively extracted Li⁺ from the aqueous phase in bulk extraction, demonstrating its potential for lithium recovery. However, the low interfacial tension between the IL and aqueous phases posed challenges for phase separation. The application of SAM and Zdol coatings effectively mitigated this issue. Overall, integrating tailored surface chemistry with the slope-plate MPSE design shows great promise as an efficient and scalable platform for studying liquid–liquid separation and optimizing ionic liquid–based extraction processes for lithium recovery from saline sources.

3D printing↗

DOE OSTI2024

Direct Synthesis of Layer-Tunable and Transfer-Free Graphene on Device-Compatible Substrates Using Ion Implantation Toward Versatile Applications

Direct synthesis of layer-tunable and transfer-free graphene on technologically important substrates is highly valued for various electronics and device applications. State of the art in the field is currently a two-step process: a high-quality graphene layer synthesis on metal substrate through chemical vapor deposition (CVD) followed by delicate layer transfer onto device-relevant substrates. Here, we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual-metal smart Janus substrate for a diffusion-limiting graphene formation to directly synthesize large area, high quality, and layer-tunable graphene films on arbitrary substrates without the post-synthesis layer transfer process. Carbon (C) ion implantation was performed on Cu–Ni film deposited on a variety of device-relevant substrates. A well-controlled number of layers of graphene, primarily monolayer and bilayer, is precisely controlled by the equivalent fluence of the implanted C-atoms (1 monolayer ~4 × 10 15 C-atoms/cm 2 ). Upon thermal annealing to promote Cu-Ni alloying, the pre-implanted C-atoms in the Ni layer are pushed toward the Ni/substrate interface by the top Cu layer due to the poor C-solubility in Cu. As a result, the expelled C-atoms precipitate into a graphene structure at the interface facilitated by the Cu-like alloy catalysis. After removing the alloyed Cu-like surface layer, the layer-tunable graphene on the desired substrate is directly realized. The layer-selectivity, high quality, and uniformity of the graphene films are not only confirmed with detailed characterizations using a suite of surface analysis techniques but more importantly are successfully demonstrated by the excellent properties and performance of several devices directly fabricated from these graphene films. Molecular dynamics (MD) simulations using the reactive force field (ReaxFF) were performed to elucidate the graphene formation mechanisms in this novel synthesis approach. With the wide use of ion implantation technology in the microelectronics industry, this novel graphene synthesis approach with precise layer-tunability and transfer-free processing has the promise to advance efficient graphene-device manufacturing and expedite their versatile applications in many fields.

36 MATERIALS SCIENCE↗