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Results for “device characterization”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS2006

Dual Input AND Gate Fabricated From a Single Channel Poly (3-Hexylthiophene) Thin Film Field Effect Transistor

A regio-regular poly (3-hexylthiophene) (RRP3HT) thin film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. This device demonstrates AND logic functionality. The device functionality was controlled by applying either 0 or -10 V to each of the gate electrodes. When -10 V was simultaneously applied to both gates, the device was conductive (ON), while any other combination of gate voltages rendered the device resistive (OFF). The p-type carrier charge mobility was about 5x10(exp -4) per square centimeter per V-sec. The low mobility is attributed to the sharp contours of the RRP3HT film due to substrate non-planarity. A significant advantage of this architecture is that AND logic devices with multiple inputs can be fabricated using a single RRP3HT channel with multiple gates.

Pinto, N. J.↗
NASA NTRS2007

Characterizing the Superconducting-to-Normal Transition in Mo/Au Transition-Edge Sensor Bilayers

We are developing arrays of Mo/Au bilayer transition-edge sensors (TES's) for applications in future X-ray astronomy missions such as NASA's Constellation-X. The physical properties of the superconducting-to-normal transition in our TES bilayers, while often reproducible and characterized, are not well understood. The addition of normal metal features on top of the bilayer are found to change the shape and temperature of the transition, and they typically reduce the unexplained 'excess' noise. In order to understand and potentially optimize the properties of the transition, we have been studying the temperature, widths and current dependence of these transitions. We report on the characterization of devices both deposited on silicon substrates and suspended on thin silicon nitride membranes. This includes key device parameters such as the logarithmic resistance sensitivity with temperature alpha, and the logarithmic resistance sensitivity with current beta, of the phase-transition. We investigate alpha and beta as a function of current, both at fixed and varying bias points in the transition. Using Ginzburg-Landau theory for the current dependence of the superconducting transition temperature, we investigate the relationship between alpha and beta and compare our measured and theoretical estimates.

Smith, Stephen J.↗
NASA NTRS2011

Electronic Health Management

Accelerated aging methodologies for electrolytic components have been designed and accelerated aging experiments have been carried out. The methodology is based on imposing electrical and/or thermal overstresses via electrical power cycling in order to mimic the real world operation behavior. Data are collected in-situ and offline in order to periodically characterize the devices' electrical performance as it ages. The data generated through these experiments are meant to provide capability for the validation of prognostic algorithms (both model-based and data-driven). Furthermore, the data allow validation of physics-based and empirical based degradation models for this type of capacitor. A first set of models and algorithms has been designed and tested on the data.

Celaya, Jose R.↗
NASA NTRS2014

Si-Ge Nano-Structured with Tungsten Silicide Inclusions

Traditional silicon germanium high temperature thermoelectrics have potential for improvements in figure of merit via nano-structuring with a silicide phase. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples are prepared using powder metallurgy techniques; including mechanochemical alloying via ball milling and spark plasma sintering for densification. In addition to microstructural development, thermal stability of thermoelectric transport properties are reported, as well as couple and device level characterization.

thermoelectricity↗
NASA NTRS2015

WSi2 in Si(1-x)Ge(x) Composites: Processing and Thermoelectric Properties

Traditional SiGe thermoelectrics have potential for enhanced figure of merit (ZT) via nano-structuring with a silicide phase, such as WSi2. A second phase of nano-sized silicides can theoretically reduce the lattice component of thermal conductivity without significantly reducing the electrical conductivity. However, experimentally achieving such improvements in line with the theory is complicated by factors such as control of silicide size during sintering, dopant segregation, matrix homogeneity, and sintering kinetics. Samples were prepared using powder metallurgy techniques; including mechano-chemical alloying, via ball milling, and spark plasma sintering for densification. Processing, micro-structural development, and thermoelectric properties will be discussed. Additionally, couple and device level characterization will be introduced.

Thermoelectric Power Generation↗
NASA NTRSDate not supplied

Seeking & Evaluating Applications of SAWs (SEASAWs)

Surface Acoustic Wave sensors (SAWs) offer a battery less, wireless, passive, noninvasive, durable means of sensing which might be appealing to many fields in space technology. Developments in many aspects of SAWs including the miniaturization of associated hardware, improvements in interrogation and device fabrication / characterization allow for the use of SAWs in many aerospace settings where traditional sensors may have sufficed but SAWs might enhance. In order to place this technology in relevant environments, an inherent understanding of operation and capabilities must be understood. With the many possibilities of SAWs in their implementation, breaking down their tradeoffs and primary systems allows for their application.

Michael Szostak↗
NASA NTRS2018

Single Event Effect Testing of the Analog Devices ADXL354 3-Axis MEMS Accelerometer

The Analog Devices ADXL354 3-AXIS MEMS accelerometer was tested for single-event effects, both destructive and non-destructive. The device was characterized for single-event upset (SEU) sensitivity and evaluated for any possibility of single-event latchup (SEL), single-event dielectric rupture (SEDR) and single-event functional interrupts (SEFI). Single-event transient (SET) response was also monitored.

Single-Event Effect (SEE)↗
NASA NTRS2020

AD8065 Voltage Feedback Amplifier’s Total Ionizing Dose Characterization Report

The purpose of this testing was to characterize Analog Devices’ AD8065 FastFET amplifier for low-dose rate (LDR) total ionizing dose (TID) response based on the Lucy project requirements and will be used on the L’ORRI instrument being built by Johns Hopkins University Applied Physics Lab. The AD8065 is a voltage feedback amplifier with FET inputs developed with the proprietary eXtra Fast Complementary Bipolar (XFCB) process. The amplifier boasts low noise operation and very high input impedance with a wide supply voltage range.

Megan Casey↗
NASA NTRS2018

Analog Devices ADXL354 Low Noise, Low Drift, Low Power, 3-Axis MEMS Accelerometer Total Ionizing Dose Characterization Test Report

The purpose of this test was to characterize the Analog Devices ADXL354 parameter degradation for total dose response. In the test, the device was exposed to a dose rate of 50 rad(Si)/s or 0.5 Gy(Si)/s using a gamma radiation source in accordance with MIL-STD-883K Paragraph 3.6.1 (Condition A). Device parameters such as supply current, self-test voltage response, and LDO regulator output voltages were monitored.

Total Ionizing Dose (TID)↗
NASA NTRSDate not supplied

A Simple Model for Rotating Detonation Rocket Engine Sizing and Performance Estimates

A Rotating Detonation Rocket Engine (RDRE) model is described which characterizes the device as an essentially infinite number of circumferentially arranged, sequentially firing pulse detonation engine (PDE) tubes. The PDE tubes are in turn treated as lumped-parameter chambers, each of which executes a dynamic (i.e. time dependent) Atkinson cycle with an allowance for a finite Mach number during the refill portion of the cycle. The formulation results in several free parameters which are used to essentially tune the model such that it closely matches higher fidelity computational fluid dynamic RDRE simulations in terms of performance, flow rates, etc. The simplicity of the model allows for straightforward combination with component models (e.g. turbopumps, cooling jackets, etc.) as well as implementation within larger vehicle simulations. Such capability allows for realistic mission analyses and benefits studies which will help to determine the best application for the RDRE concept.

detonation↗
NASA NTRSDate not supplied

A Simple Model for Rotating Detonation Rocket Engine Sizing and Performance Estimates

A Rotating Detonation Rocket Engine (RDRE) model is described which characterizes the device as an essentially infinite number of circumferentially arranged, sequentially firing pulse detonation engine (PDE) tubes. The PDE tubes are in turn treated as lumped-parameter chambers, each of which executes a dynamic (i.e. time dependent) Atkinson cycle with an allowance for a finite Mach number during the refill portion of the cycle. The formulation results in several free parameters which are used to essentially tune the model such that it closely matches higher fidelity computational fluid dynamic RDRE simulations in terms of performance, flow rates, etc. The simplicity of the model allows for straightforward combination with component models (e.g. turbopumps, cooling jackets, etc.) as well as implementation within larger vehicle simulations. Such capability allows for realistic mission analyses and benefits studies which will help to determine the best application for the RDRE concept.

detonation↗
NASA NTRS1980

Silicon Solar Cell Fabrication Technology

Device fabrication and photoconductive lifetime decay measurements were used to characterize single and polycrystalline silicon substracts. The device characterization of the processed materials was done by spectral response measurements and absolute quantum efficiency at a single wavelength. The results were then reduced to yield the diffusion length of the various samples. The photoconductive lifetime decay method was implemented in order to determine the minority carrier lifetime in unprocessed wafers.

Stafsudd, O. M.↗
DOE OSTI2020

Monolithic Spatial Heterodyne Raman Spectrometers (mSHRS): Toward highly miniature chemical sensors for deployment on moving platforms (Final Report, Phase I)

This report covers phase 1 (year 1) of the mSHRS project. Our ultimate long-term goal is to develop highly miniature Raman analyzers, known as spatial heterodyne Raman spectrometers (SHRS), that are deployable as in-situ chemical sensors on moving platforms. During Phase I (FY19/20) funding, our team focused our efforts solely on the key innovation needed toward realizing that goal: the development of the monolithic interferometer comprising the beam splitter and gratings with the appropriate design parameters and tolerances to enable Raman interferometry. We successfully developed and characterized the performance of the first monolithic SHRS devices including a monolithic version that incorporates field-widened optics. Our solid-state design approach integrated all optical components as a single monolithic unit for maintaining precise optical alignment during sensor operation, a requirement for operating in a vibration prone environment. This project has two principle activities: (1) Design and fabricate monolithic SHRS devices (i.e. monolithic device task) and (2) characterize the mSHRS devices in terms of performance (i.e. the Monolithic SHRS characterization task).

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS2018

Cryogenic Parametric Characterization of Gallium Nitride Switches

This report presents the parametric characterization results of four GaN field-effect transistor (FET) devices from three manufacturers, one of which is a cascode device, and compares those results to a Si power metal-oxide-semiconductor fieldeffect transistor (MOSFET) and a SiC power MOSFET. The devices were first characterized at ambient temperature, then at cryogenic temperatures down to -196 C (LN2 temperature), and finally at ambient temperature again in the event that the device parameters were permanently affected by the cryogenic temperatures. In general, the results indicate that the GaN devices show significant improvement overall at cryogenic temperatures in the parameters characterized, such as onresistance and leakage currents, compared to the Si and SiC devices. The results show that the SiC device tested should not be used at cryogenic temperatures due to the significant increase in on-resistance. The results also show that the GaN and Si parameters characterized were either not affected by the cryogenic temperatures or changed by no more than +/-20 percent post LN2 submersion. The device that exhibited the most parametric change post LN2 submersion was the SiC power MOSFET in its leakage currents.

Gonzalez, Marcelo C.↗
DOE OSTI2020

Low-cost & Energy Dense Batteries for Transportation

The project sought to explore development of novel polymer separator materials and additives for Li-S and Li-ion batteries that would solve critical failure modes and performance bottlenecks for these chemistries. This technology presented significant advanced manufacturing challenges and opportunities in getting to scale, including materials synthesis scale-up, large-area polymer processing techniques, electrode formulation, and the development of coin and pouch cells for electrochemical energy storage. Specific accomplishments included synthesis of organic molecular and polymer materials designed to solve outstanding challenges in electrochemical cells. The primary focus of new materials design was aimed at improving longevity, power, cost reduction, and environmental sustainability of said electrochemical devices. The project also involved assembly and characterization of electrochemical devices with standard galvanostatic and potentiostatic techniques as well as electrochemical impedance spectroscopy.

25 ENERGY STORAGE↗