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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Perspectives on high temperature superconducting electronics

The major challenges in making high temperature superconducting (HTSC) electronics viable are predominantly materials problems. Unlike their predecessors, the metal oxide-based superconductors are integratable with other advanced technologies such as opto-electronics and micro-electronics. The materials problems to be addressed relate to the epitaxial growth of high quality films, highly oriented films on non-lattice matched substrates, heterostructures with atomically sharp interfaces of junctions and other novel devices, and the processing of these films with negligible deterioration of the superconducting properties. These issues are illustrated with results based on films prepared in-situ by a pulsed laser deposition process. Films with zero-transition temperatures of 90 K and critical current densities of 5 x 10(exp 6) A/sq cm at 77 K have been prepared by this technique. Ultra-thin films, less than 100 A show T(sub c) is greater than 80 K, supporting the idea of two-dimensional transport in these materials. By the use of appropriate buffer layers, films with T(sub c) of 87 K and J(sub c) of 6 x 10(exp 4) A/sq cm were fabricated on silicon substrates. Submicron structures with J(sub c) is greater than 2 x 10(exp 7) at 10 K were fabricated. Results on nonlinear switching elements, IR detectors, and microwave studies will be briefly summarized.

Venkatesan, T.↗
NASA NTRS1991

The effects of space radiation on thin films of YBa2Cu3O(7-x)

This investigation had two objectives: (1) to determine the effects of space radiation on superconductor parameters that are most important in space applications; and (2) to determine whether this effect can be simulated with Co-60 gamma rays, the standard test method for space materials. Thin films of yttrium barium copper oxide (YBCO) were formed by coevaporation of Y, BaF2, and Cu and post-annealing in wet oxygen at 850 C for 3.5 h. The substrate used was (100) silicon with an evaporated zirconia buffer layer. The samples were characterized by four point probe electrical measurements as a function of temperature. The parameters measured were the zero resistance transition temperature T(sub c) and the room temperature resistance. The samples were then exposed to Co-60 gamma-rays in air and in pure nitrogen, and to 780 keV electrons, in air. The parameters were then remeasured. The results are summarized. The results indicate little or no degradation in the parameters measured for samples exposed up to 10 Mrads of gamma-rays in nitrogen. However, complete degradation is preliminarily attributed to the high level of ozone generated in the chamber by the gamma-ray interaction with air. It can be concluded that: (1) the electron component of space radiation does not degrade the critical temperature of the YBCO films described, at least for energies around 800 keV and doses similar to those received by surface materials on spacecraft in typical remote sensing missions; and (2) for qualifying this and other superconducting materials against the space-radiation threat the standard test method used in the aerospace industry, namely, exposure to Co-60 gamma-rays in air, may require some further investigation. As a minimum, the sample must be either in vacuum or in positive nitrogen pressure.

Herschitz, R.↗
NASA NTRS1991

The effect of temperature cycling typical of low earth orbit satellites on thin films of YBa2Cu3O(7-x)

Thin films of YBa2Cu3O(7-x) (YBCO) were temperature cycled to simulate conditions of a low earth orbit satellite. In one series of tests, epitaxial and polycrystalline YBCO films were cycled between temperatures of +/- 80 C in vacuum and in nitrogen for hundreds of cycles. The room temperature resistance of an epitaxial YBCO film increased by about 10 percent, but the superconducting transition temperature was unchanged. The largest changes were for a polycrystalline YBCO film on oxidized silicon with a zirconia buffer layer, for which the transition temperature decreased by 3 K. An extended test was carried out for epitaxial films. After 3200 cycles (corresponding to about 230 days in space), transition temperatures and critical current densities remained unchanged.

Mogro-Campero, A.↗
NASA NTRS1992

Superconductivity devices: Commercial use of space

High T sub C superconducting thick film were prepared by a screen printing process. Y-based (YBa2Cu3O(7-x) superconducting thick film were printed on 211/Al2O3, SNT/Al2O3, and YSZ substrates. Because of poor adhesion of the superconductor thick films to 211/Al2O3 and SNT/Al2O3 substrates, relatively low T sub C and J sub C values were obtained from the films printed on these substrates. Critical temperatures (T sub C) of YBa2Cu3O(7-x) thick films deposited on 211/Al2O3 and SNT/Al2O3 substrates were about 80 K. The critical current densities (J sub C) of these films were less than 2 A/sq cm. Higher T sub C and J sub C YBa2Cu3O(7-x) thick films were printed on YSZ substrates. A YBa2Cu3O(7-x) thick film with T sub C=86.4 and J sub C= 50.4 A/sq cm was prepared by printing the film on YSZ substrate and firing at 990 C for 10 minutes. Multiple-lead samples were also prepared on the YSZ substrates. The multiple-lead samples showed lower T sub C and/or J sub C values than those of the plain samples. The electrical properties of YBa2Cu3O(7-x) thick films were determined by the microstructures of the films. The YBa2Cu3O(7-x) thick films printed on the YSZ substrates, which had the best properties among the films printed on the three different kinds of substrates, had the highest density and the best particle interconnection. The YBa2Cu3O(7-x) thick films with preferred orientation in (001) direction were obtained on the YSZ substrates. Cracks, which retard the properties of the films, were found from the films deposited on the YSZ substrates. Currently, a MSZ (Magnesium Stabilized Zirconia) substrate, which had higher thermal expansion coefficient than the YSZ substrate, is used as substrate for the YBa2Cu3O(7-x) thick film in order to eliminate the cracks on the film. Bi-based superconductor thick films were printed on polycrystalline MgO and YSZ substrates. Interactions between BSCCO thick films and the YSZ substrates were observed. Various buffer layer materials were applied onto the substrates in order to avoid the interactions between the BSCCO thick films and the ZrO2-based substrates. So far, a BSCCO printed on MgO substrate with T Sub C=89K was obtained. The J sub C of the film was lower than 0.1 A/sq cm by reason of poor interconnectivity of the BSCCO particles.

Haertling, Gene↗
NASA NTRS1991

Crystal growth of YBa2Cu3O(7-x) and reaction of gold crucible with Ba-Cu-rich flux

YBa2Cu3O(7-x) crystals are grown in a gold crucible by a self-flux method. The flux moves along the gold surface due to surface wetting and leaves Y123 crystals behind. The obtained crystals are clean and have a size up to two millimeters and a Tc is greater than 90 K. In an effort to recycle the used crucibles, it is found that the used gold is contaminated by copper. A CuO thin film is easily formed on the surface of the crucible that is made of the used gold. This film provides good surface wetting and a buffer layer, which reduces the reaction between gold and the Y-Ba-Cu-oxide melt.

Tao, Y. K.↗
NASA NTRS1993

High Reynolds number calculations using the dynamic subgrid-scale stress model

The dynamic subgrid-scale eddy viscosity model was used in the large-eddy simulation of the turbulent flow in a plane channel for Reynolds numbers based on friction velocity and channel half-width ranging between 200 and 2000, a range including values significantly higher than in previous simulations. The computed wall stress, mean velocity, and Reynolds stress profiles compare very well with experimental and direct simulation data. Comparison of higher moments is also satisfactory. Although the grid in the near-wall region is fairly coarse, the results are quite accurate: the turbulent kinetic energy peaks at y(+) of about 12, and the near-wall behavior of the resolved stresses is captured accurately. The model coefficient is o(0.001) in the buffer layer and beyond, where the cutoff wave numbers are in the decaying region of the spectra; in the near-wall region, the cutoff wave numbers are nearer the energy-containing range, and the resolved turbulent stresses become a constant fraction of the resolved stresses. This feature is responsible for the correct near-wall behavior of the model coefficient.

Piomelli, Ugo↗
NASA NTRS1993

YBa2Cu3O7 thin films on nanocrystalline diamond films for HTSC bolometer

Superconducting YBa2Cu3O(7-x) films on nanocrystalline diamond thin films have been fabricated. A composite buffer layer system consisting of diamond/Si3N4/YSZ/YBCO was explored for this purpose. The as-deposited YBCO films were superconducting with Tc of about 84 K and a relatively narrow transition width of about 8 K. SEM cross sections of the films showed very sharp interfaces between diamond/Si3N4 and between Si3N4/YSZ. The deposited YBCO film had a surface roughness of about 1000 A, which is suitable for high-temperature superconductive (HTSC) bolometer fabrication. It was also found that preannealing of the nanocrystalline diamond thin films at high temperature was very important for obtaining high-quality YBCO films.

Cui, G.↗
NASA NTRS1993

Investigation of ZnSe-coated silicon substrates for GaAs solar cells

Studies are being carried out to determine the feasibility of using ZnSe as a buffer layer for GaAs solar cells grown on silicon. This study was motivated by reports in the literature indicating ZnSe films had been grown by metallorganic chemical vapor deposition (MOCVD) onto silicon with EPD values of 2 x 10(exp 5) cm(sup -2), even though the lattice mismatch between silicon and ZnSe is 4.16 percent. These results combined with the fact that ZnSe and GaAs are lattice matched to within 0.24 percent suggest that the prospects for growing high efficiency GaAs solar cells onto ZnSe-coated silicon are very good. Work to date has emphasized development of procedures for MOCVD growth of (100) ZnSe onto (100) silicon wafers, and subsequent growth of GaAs films on ZnSe/Si substrates. In order to grow high quality single crystal GaAs with a (100) orientation, which is desirable for solar cells, one must grow single crystal (100) ZnSe onto silicon substrates. A process for growth of (100) ZnSe was developed involving a two-step growth procedure at 450 C. Single crystal, (100) GaAs films were grown onto the (100) ZnSe/Si substrates at 610 C that are adherent and specular. Minority carrier diffusion lengths for the GaAs films grown on ZnSe/Si substrates were determined from photoresponse properties of Al/GaAs Schottky barriers. Diffusion lengths for n-type GaAs films are currently on the order of 0.3 microns compared to 2.0 microns for films grown simultaneously by homoepitaxy.

Huber, Daniel A.↗
NASA NTRS1992

Direct simulation of polymer drag reduction in free shear flows and vortex dipoles

One of the most efficient techniques for drag reduction is the injection of polymers near a wall which can achieve a reduction in drag up to 80 percent. Several experimental observations tend to indicate that polymers modify the turbulence structures within the buffer layer and show that the changes consist of a weakening of the strength of the streamwise vortices. In this paper, we investigate the effects of viscoelasticity on two different types of flows: the vortex dipole impinging walls to model streamwise vortices in a turbulent boundary layer and the mixing layer that represents free shear flows. For this purpose, we examined three different rheological models: the Oldroyd-B model, the Jeffrey's corotational model, and the FENE-P model.

Orlandi, P.↗
NASA NTRS1994

Characteristics of III-V Semiconductor Devices at High Temperature

This paper presents the development of III-V based pseudomorphic high electron mobility transistors (PHEMT's) designed to operate over the temperature range 77 to 473 K (-196 to 200 C). These devices have a pseudomorphic undoped InGaAs channel that is sandwiched between an AlGaAs spacer and a buffer layer; gate widths of 200, 400, 1600, and 3200 micrometers; and a gate length of 2 micrometers. Measurements were performed at both room temperature and 473 K (200 C) and show that the drain current decreases by 30 percent and the gate current increases to about 9 microns A (at a reverse bias of -1.5 V) at the higher temperature. These devices have a maximum DC power dissipation of about 4.5 W and a breakdown voltage of about 16 V.

Simons, Rainee N.↗
NASA NTRS1997

Fully Threaded Tree for Adaptive Refinement Fluid Dynamics Simulations

A fully threaded tree (FTT) for adaptive refinement of regular meshes is described. By using a tree threaded at all levels, tree traversals for finding nearest neighbors are avoided. All operations on a tree including tree modifications are O(N), where N is a number of cells, and are performed in parallel. An efficient implementation of the tree is described that requires 2N words of memory. A filtering algorithm for removing high frequency noise during mesh refinement is described. A FTT can be used in various numerical applications. In this paper, it is applied to the integration of the Euler equations of fluid dynamics. An adaptive mesh time stepping algorithm is described in which different time steps are used at different l evels of the tree. Time stepping and mesh refinement are interleaved to avoid extensive buffer layers of fine mesh which were otherwise required ahead of moving shocks. Test examples are presented, and the FTT performance is evaluated. The three dimensional simulation of the interaction of a shock wave and a spherical bubble is carried out that shows the development of azimuthal perturbations on the bubble surface.

FINITE ELEMENT ANALYSIS↗
NASA NTRS2001

Synthesis of Carbon Nanotubes Array by CVD

Since the properties of multi-wall carbon nanotubes (MWCNT) are superior in many devices such as electronics and sensors, many efforts have been involved in synthesizing particular structural or dimensional MWCNT. Uniform aligned MWCNT array is one of the prototype structures for devices such as filed emission device and microelectromechanical systems in which a large length to diameter ratio may also be required. Most aligned MWCNT recently synthesized by plasma enhanced chemical vapor deposition (CVD) have cone shaped structures. This presentation will illustrate aligned MWCNT array synthesized on silicon substrates using thermal CVD that could produce MWCNT with uniform diameter. An array of nickel particles was used as catalyst for MWCNT growth. A thin Ti or Au buffer layer was coated on the substrate prior to depositing nickel particles. Because the MWCNT size depends on the catalyst particle size, the nickel particle size annealed at various temperatures was investigated. MWCNT were grown on the substrate in the temperature range of 700 C - 1000 C and the pressure range of 1 to 300 torr. Methane and hydrogen gases with methane content of 1 - 10 % were used for the MWCNT synthesis. Morphology, length and diameter of MWCNT were determined by scanning electron microscopy and Raman spectroscopy. The detailed results of synthesis and characterizations will be discussed in the presentation.

Zhu, S.↗
NASA NTRS2001

Carbon Nanotubes Grown By CVD in Various Conditions

Since the superior properties of multi-wall carbon nanotubes (MWCNT) could be used in numerous devices such as electronics and sensors, many efforts have been engaged in synthesizing particular structural or dimensional MWCNT. This presentation will illustrate MWCNT synthesized on silicon substrates by thermal CVD. On the substrate, an array of catalysts is coated using sputtering deposition. A thin Ti buffer layer is also coated on some Si substrates prior to depositing catalyst particles. Nickel, cobalt or iron transition metals are used as catalysts for the MWCNT growth. Since the diameter of MWCNT depends on the size of catalyst particles, the catalyst particle size is investigated after annealed at various temperatures. MWCNT are grown on the substrate in the temperature range of 700 to 1000 C and the pressure range of 100 torr to one atmosphere. Methane and hydrogen gases with methane content of 10% to 100% are used for the MWCNT synthesis. Morphology, length and diameter of these MWCNT are determined by scanning electron microscopy and Raman spectroscopy. The detailed results of syntheses and characterizations will be discussed in the presentation.

Zhu, S.↗
NASA NTRS2001

Carbon Nanotubes Growth by CVD in Various Conditions

Since the superior properties of multi-wall carbon nanotubes (MWCNT could be used in numerous devices such as electronics and sensors, many efforts have been engaged in synthesizing particular structural or dimensional MWCNT. This presentation will illustrate MWCNT synthesized on silicon substrates by thermal CVD. On the substrate, an array of catalysts is coated using sputtering deposition. A thin Ti buffer layer is also coated on some Si substrates prior to depositing catalyst particles. Nickel, cobalt or iron transition metals are used as catalysts for the MWCNT growth. Since the diameter of MWCNT depends on the size of catalyst particles, the catalyst particle size is investigated after annealed at various temperatures. MWCNT are grown on the substrate in the temperature range of 700 to 1000 C and the pressure range of 100 torr to one atmosphere. Methane and hydrogen gases with methane content of 10% to 100% are used for the MWCNT synthesis. Morphology, length and diameter of these MWCNT are determined by scanning electron microscopy and Raman spectroscopy. The detailed results of syntheses and characterizations will be discussed in the presentation.

Zhu, S.↗
NASA NTRS2001

A Low-Noise NbTiN Hot Electron Bolometer Mixer

Hot electron bolometer (HEB) mixer elements, based on niobium titanium nitride (NbTiN) thin film technology, have been fabricated on crystalline quartz substrates over a 20 nm thick AlN buffer layer. The film was patterned by optical lithography, yielding bolometer elements that measure about 1 micrometer long and between 2 and 12 micrometers wide. These mixer chips were mounted in a fixed-tuned waveguide mixer block, and tested in the 600 and 800 GHz frequency range. The 3-dB output bandwidth of these mixers was determined to be about 2.5 GHz and we measured a receiver noise temperature of 270 K at 630 GHz using an intermediate frequency of 1.5 GHz. The receiver has excellent amplitude stability and the noise temperature measurements are highly repeatable. An 800 GHz receiver incorporating one of these mixer chips has recently been installed at the Sub-Millimeter Telescope in Arizona for field test and for astronomical observations.

Tong, C. Edward↗
NASA NTRS2002

Progress in the Development of Metamorphic Multi-Junction III-V Space-Solar Cells at Essential Research Incorporated

Theoretical calculations have shown that highest efficiency III-V multi-junction solar cells require alloy structures that cannot be grown on a lattice-matched substrate. Ever since the first demonstration of high efficiency metamorphic single junction 1.1 eV and 1.2 eV InGaAs solar cells by Essential Research Incorporated (ERI), interest has grown in the development of multi-junction cells of this type using graded buffer layer technology. ERI is currently developing a dual-junction 1.6 eV InGaP/1.1 eV InGaAs tandem cell (projected practical air-mass zero (AM0), one-sun efficiency of 28%, and 100-sun efficiency of 37.5%) under a Ballistic Missile Defense Command (BMDO) SBIR Phase II program. A second ongoing research effort at ERI involves the development of a 2.1 eV AlGaInP/1.6 eV InGaAsP/1.2 eV InGaAs triple-junction concentrator tandem cell (projected practical AM0 efficiency of 36.5% under 100 suns) under a SBIR Phase II program funded by the Air Force. We are in the process of optimizing the dual-junction cell performance. In case of the triple-junction cell, we have developed the bottom and the middle cell, and are in the process of developing the layer structures needed for the top cell. A progress report is presented in this paper.

Sinharoy, Samar↗
NASA NTRS2004

Novel Biomedical Devices Utilizing Light-Emitting Nanostructures

As part of the NASA project, we are investigating the formation, properties, and performance of QD heterostructures, to be incorporated into a novel biomedical device for detecting bacteria and/or viruses in fluids on board space vehicles. We are presently synthesizing the epitaxial quantum dot structures using molecular beam epitaxy. We recently developed a method for controlling the arrangement of QDs, based upon a combination of buffer layer growth and controlled annealing sequences. This method is promising for producing arrangements of QDs with a locally well-controlled distribution of sizes. In the future, we plan to explore selective pre-patterning of the starting surface using focused ion-beam nanopatterning, which will enable us to precisely tune the compositions, sizes, and placement of the QDs, in order laterally tune the emission and detection wavelengths of QD based devices.

Goldman, Rachel S.↗
NASA NTRS2004

High-Performance SiC/SiC Ceramic Composite Systems Developed for 1315 C (2400 F) Engine Components

As structural materials for hot-section components in advanced aerospace and land-based gas turbine engines, silicon carbide (SiC) ceramic matrix composites reinforced by high performance SiC fibers offer a variety of performance advantages over current bill-of-materials, such as nickel-based superalloys. These advantages are based on the SiC/SiC composites displaying higher temperature capability for a given structural load, lower density (approximately 30- to 50-percent metal density), and lower thermal expansion. These properties should, in turn, result in many important engine benefits, such as reduced component cooling air requirements, simpler component design, reduced support structure weight, improved fuel efficiency, reduced emissions, higher blade frequencies, reduced blade clearances, and higher thrust. Under the NASA Ultra-Efficient Engine Technology (UEET) Project, much progress has been made at the NASA Glenn Research Center in identifying and optimizing two highperformance SiC/SiC composite systems. The table compares typical properties of oxide/oxide panels and SiC/SiC panels formed by the random stacking of balanced 0 degrees/90 degrees fabric pieces reinforced by the indicated fiber types. The Glenn SiC/SiC systems A and B (shaded area of the table) were reinforced by the Sylramic-iBN SiC fiber, which was produced at Glenn by thermal treatment of the commercial Sylramic SiC fiber (Dow Corning, Midland, MI; ref. 2). The treatment process (1) removes boron from the Sylramic fiber, thereby improving fiber creep, rupture, and oxidation resistance and (2) allows the boron to react with nitrogen to form a thin in situ grown BN coating on the fiber surface, thereby providing an oxidation-resistant buffer layer between contacting fibers in the fabric and the final composite. The fabric stacks for all SiC/SiC panels were provided to GE Power Systems Composites for chemical vapor infiltration of Glenn designed BN fiber coatings and conventional SiC matrices. Composite panels with system B were heat treated at Glenn, and the pores that remained open were filled by silicon melt infiltration (MI). Panels with system A and the other SiC/SiC systems were not heat treated, and remaining open pores in these systems were filled with SiC slurry and silicon MI.

DiCarlo, James A.↗