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At least 235 records · Page 13

All sources NASA NTRS DOE OSTI

DOE OSTI2025

Roadmap on thermodynamics and thermal metamaterials

Thermal metamaterials represent a transformative paradigm in modern physics, synergizing thermodynamic principles with metamaterial engineering to master heat flow at will. As next-generation technologies demand multi-scale thermal control, this field urgently requires systematic frameworks to unify its multidisciplinary advances. Curated through a global collaboration involving over 50 specialists across 25 subdisciplines, this review primarily summarizes two decades of advancements, ranging from theoretical breakthroughs to functional implementations. The review reveals groundbreaking innovations in heat manipulation through the exploration of both classical and non-classical transport regimes, topological thermal control mechanisms, and quantum-informed phonon engineering strategies. By bridging physical insights like non-Hermitian thermal dynamics and valleytronic phonon transport with cutting-edge applications, we demonstrate paradigm-shifting capabilities: environment-adaptive thermal cloaks, AI-optimized metamaterials, and nonlinear thermal circuits enabling heat-based computation. Experimental milestones include 3D thermal null media with reconfigurable invisibility and thermal designs breaking classical conductivity limits. Here, this collaborative effort establishes an indispensable roadmap for physicists, highlighting pathways to quantum thermal management, entropy-controlled energy systems, and topological devices. As thermal metamaterials transition from laboratory marvels to technological cornerstones, this work provides the foundational lexicon and design principles for the coming era of intelligent thermal matter.

heat conduction control↗

NASA NTRS1980

A probabilistic analysis of electrical equipment vulnerability to carbon fibers

The statistical problems of airborne carbon fibers falling onto electrical circuits were idealized and analyzed. The probability of making contact between randomly oriented finite length fibers and sets of parallel conductors with various spacings and lengths was developed theoretically. The probability of multiple fibers joining to bridge a single gap between conductors, or forming continuous networks is included. From these theoretical considerations, practical statistical analyses to assess the likelihood of causing electrical malfunctions was produced. The statistics obtained were confirmed by comparison with results of controlled experiments.

Elber, W.↗

NASA NTRS1989

The 5-kW arcjet power electronics

The initial design and evaluation of a 5 kW arcjet power electronics breadboard which as been integrated with a modified 1 kW design laboratory arcjet is presented. A single stage, 5 kW full bridge, pulse width modulated (PWM), power converter was developed which was phase shift regulated. The converter used metal oxide semiconductor field effect transistor (MOSFET) power switches and incorporated current mode control and an integral arcjet pulse ignition circuit. The unoptimized power efficiency was 93.5 and 93.9 percent at 5 kW and 50A output at input voltages of 130 and 150V, respectively. Line and load current regulation at 50A output was within one percent. The converter provided up to 6.6 kW to the arcjet with simulated ammonia used as a propellant.

Gruber, R. P.↗

NASA NTRS1989

5-kW arcjet power electronics

Gruber, R. P.↗

DOE OSTI2021

Bridging Power System Protection Gaps with Data-driven Approaches

Protection is a critical function in power systems to avoid equipment damage, maintain personnel safety, and support system reliability. However, current protective relay technology cannot adequately protect equipment and personnel from effects of some events; these deficiencies are termed protection gaps. In this research, a data-driven approach is proposed to complement traditional protection technology and distinguish fault conditions from transients caused by normal operations. A convolutional neural network (CNN) based fault detection approach is implemented to achieve data translation invariance of the time-series input data. As a result, the data-driven method can accurately detect system faults despite variation and noise in the input data. In addition, using the CNN–based method avoids the complicated manual feature extraction procedure required by many traditional data-driven methods. The effectiveness of the proposed approach is tested on four kinds of protection gaps: high impedance faults, transformer/generator inter-turn faults, distribution system PV circuit faults, and the mis-operation situations of Zone 3 line protection relays operating under system stress. Finally, a transfer learning method is also proposed to address the common issue of data-driven methods for which real-world training data are scarce. Extensive study results demonstrate that the proposed approach can accurately bridge power system protection gaps.

24 POWER TRANSMISSION AND DISTRIBUTION↗

DOE OSTI2025

Quantum complexity in gravity, quantum field theory, and quantum information science

Quantum complexity quantifies the difficulty of preparing a state or implementing a unitary transformation with limited resources. Applications range from quantum computation to condensed matter physics and quantum gravity. Here, we seek to bridge the approaches of these fields, which define and study complexity using different frameworks and tools. We describe several definitions of complexity, along with their key properties. In quantum information theory, we focus on complexity growth in random quantum circuits. In quantum many-body systems and quantum field theory (QFT), we discuss a geometric definition of complexity in terms of geodesics on the unitary group. In dynamical systems, we explore a definition of complexity in terms of state or operator spreading, as well as concepts from tensor-networks. We also outline applications to simple quantum systems, quantum many-body models, and QFTs including conformal field theories (CFTs). Finally, we explain the proposed relationship between complexity and gravitational observables within the holographic anti-de Sitter (AdS)/CFT correspondence.

Baiguera, Stefano [Istituto Nazionale di Fisica Nu↗

DOE OSTI2022

Hybrid Entanglement Distribution between Remote Microwave Quantum Computers Empowered by Machine Learning

Superconducting microwave circuits with Josephson junctions, the major platform for quantum computing, can only reach the full capability when connected. This requires an efficient protocol to distribute microwave entanglement. While quantum computers typically use discrete-variable (DV) methods for information encoding, the entire continuous-variable (CV) degree of freedom in electromagnetic fields must be utilized to achieve the highest entanglement distribution rate. Here, we propose a hybrid protocol to resolve the incompatibility between DV microwave quantum computers and CV quantum communications. CV microwave entanglement is distributed using optical swapping of optical-microwave entanglement pairs. To interface with DV microwave quantum computers, we further design a hybrid circuit to simultaneously convert and distill high-quality DV entanglement from noisy CV entanglement. The hybrid circuit is trained with machine-learning algorithms, ensuring high entanglement fidelity and generation rate. In conclusion, our work not only provides a practical method to realize efficient quantum links for superconducting microwave quantum computers, but also opens avenues to bridge the gap between DV and CV quantum systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

NASA NTRS1983

The 25 kW resonant dc/dc power converter

The feasibility of processing 25-kW of power with a single, transistorized, series resonant converter stage was demonstrated by the successful design, development, fabrication, and testing of such a device which employs four Westinghouse D7ST transistors in a full-bridge configuration and operates from a 250-to-350 Vdc input bus. The unit has an overall worst-case efficiency of 93.5% at its full rated output of 1000 V and 25 A dc. A solid-state dc input circuit breaker and output-transient-current limiters are included in and integrated into the design. Full circuit details of the converter are presented along with the test data.

Robson, R. R.↗

NASA NTRS1984

Designing a 25-kilowatt high frequency series resonant

The feasibility of processing 25 kW of power with a single, transistorized, 20 kHz, series resonant converter stage has been demonstrated by the successful design, development, fabrication, and testing of such a device. It employs four Westinghouse D7ST transistors in a full-bridge configuration and operates from a 250-to-350-Vdc input bus. The unit has an overall worst-case efficiency of 93.5% at its full rated output of 1000 V and 25 A dc. A solid-state dc input circuit breaker and output-transient-current limiters are included in and integrated into the design. Circuit details of the converter are presented along with test data.

Robson, R. R.↗

DOE OSTI2023

Buried interface modulation via $\mathrm{PEDOT:PSS}$ ionic exchange for the Sn-Pb mixed perovskite based solar cells

To apply Sn-Pb mixed perovskite solar cells for highly efficient single- or multi-junction devices, understanding device-specific buried interfaces is necessary. Poly [3,4-ethylenedioxythiophene]:poly[styrene sulfonate] (PEDOT:PSS) is primarily used as a hole transport layer in Sn-Pb mixed perovskite solar cells. However, the spatial heterogeneity of PEDOT:PSS, caused by its PEDOT-rich and PSS-rich domains, induces many defects at the buried interface in PEDOT:PSS/perovskite, which limits device performance. Here, we present ionic exchange (IE) of PEDOT:PSS via a combination of methylamine iodide (MAI) and dimethyl sulfoxide (DMSO). Through surface analyses and density functional theory (DFT) simulations, we confirm that the IE process preferentially form PEDOT-I and MA-PSS and that PSS-rich domains bind to DMSO. Thus, the spatial separation of PEDOT:PSS is solved, and the exchanged MA + and I - ions serve as a bridge between PEDOT:PSS and the perovskite, leading to improved physical, chemical, and electrical properties of the buried interface. The Sn-Pb mixed perovskite solar cells using IE-PEDOT:PSS achieve an improved efficiency of 21.3% with an open-circuit voltage of 0.85 V and show better long-term stability. Additionally, IE-PEDOT:PSS works effectively in 2-terminal all-perovskite tandem devices, resulting in an improved efficiency of 23.5% and high reproducibility.

14 SOLAR ENERGY↗

NASA NTRS1986

The split-cross-bridge resistor for measuring the sheet resistance, linewidth, and line spacing of conducting layers

A new test structure was developed for evaluating the line spacing between conductors on the same layer using an electrical measurement technique. This compact structure can also be used to measure the sheet resistance, linewidth, and line pitch of the conducting layer. Using an integrated-circuit fabrication process, this structure was fabricated in diffused polycrystalline silicon and metal layers and measured optically and electrically. For the techniques used, the optical measurements were typically one-quarter micron greater than the electrical measurements. Most electrically measured line pitch values were within 2 percent of the designed value. A small difference between the measured and designed line pitch is used to validate sheet resistance, linewidth, and line spacing values.

Buehler, M. G.↗

NASA NTRS1989

Performance testing of a high frequency link converter for Space Station power distribution system

The testing of a brassboard version of a 20-kHz high-frequency ac voltage link prototype converter dynamics for Space Station application is presented. The converter is based on a three-phase six-pulse bridge concept. The testing includes details of the operation of the converter when it is driving an induction machine source/load. By adapting a field orientation controller (FOC) to the converter, four-quadrant operation of the induction machine from the converter has been achieved. Circuit modifications carried out to improve the performance of the converter are described. The performance of two 400-Hz induction machines powered by the converter with simple V/f regulation mode is reported. The testing and performance results for the converter utilizing the FOC, which provides the capability for rapid torque changes, speed reversal, and four-quadrant operation, are reported.

Sul, S. K.↗

DOE OSTI2023

Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials

Chalcogenide Phase Change Materials (PCM) and metal insulator transition (MIT) materials are a group of materials that are capable of switching between low resistance and high resistance states. These emerging materials have been widely used in optical storage media and memory devices. Over the past recent years, there have been interests in exploiting the PCM and MIT materials, especially germanium antimony telluride (GST) alloys and vanadium dioxide (VO 2 ), for radio frequency (RF) applications. The PCM and MIT-based RF devices are expected to bridge the gap between semiconductor switches and microelectromechanical system (MEMS) switches as they combine the low insertion loss performance of MEMS technology and the small size and reliability performance of semiconductor technology. This article presents an overview of the PCM and MIT materials for RF circuits and discusses the recent advancements in reconfigurable millimeter-wave (mmWave) devices based on PCM and MIT materials in depth.

36 MATERIALS SCIENCE↗

NASA NTRS2003

164-GHz MMIC HEMT Frequency Doubler

A monolithic microwave integrated circuit (MMIC) that includes a high-electron-mobility transistor (HEMT) has been developed as a prototype of improved frequency doublers for generating signals at frequencies greater than 100 GHz. Signal sources that operate in this frequency range are needed for a variety of applications, notably including general radiometry and, more specifically, radiometric remote sensing of the atmosphere. Heretofore, it has been common practice to use passive (diode-based) frequency multipliers to obtain frequencies greater than 100 GHz. Unfortunately, diode-based frequency multipliers are plagued by high DC power consumption and low conversion efficiency. Moreover, multiplier diodes are not easily integrated with such other multiplier-circuit components as amplifiers and oscillators. The goals of developing the present MMIC HEMT frequency doubler were (1) to utilize the HEMT as an amplifier to increase conversion efficiency (more precisely, to reduce conversion loss), thereby increasing the output power for a given DC power consumption or, equivalently, reducing the DC power consumption for a given output power; and (2) to provide for the integration of amplifier and oscillator components on the same chip. The MMIC frequency doubler (see Figure 1) contains an AlInAs/GaInAs/InP HEMT biased at pinch-off to make it function as a class-B amplifier (meaning that it conducts in half-cycle pulses). Grounded coplanar waveguides (GCPWs) are used as impedance-matching transmission lines. Air bridges are placed at discontinuities to suppress undesired slot electromagnetic modes. Another combination of GCPWs also serves both as a low-pass filter to suppress undesired oscillations at frequencies below 60 GHz and as a DC blocker. Large decoupling capacitors and epitaxial resistors are added in the drain and gate lines to suppress bias oscillations. At the output terminal, the fundamental frequency is suppressed by a quarter-wave open stub, which presents a short circuit at the fundamental frequency and an open circuit at the second harmonic. At an input power of 7 mW, the output power and conversion loss at an output frequency of 164 GHz were found to be 5 dBm (approximately equal to 3.2 mW) and 2 dB, respectively, with a 3-dB output-power bandwidth of 14 GHz. This is the best performance reported to date for an MMIC HEMT frequency doubler above 100 GHz.

Samoska, Lorene↗

NASA NTRS1975

Research on pressure sensors for biomedical instruments

The development of a piezo-resistive pressure transducer is discussed suitable for recording pressures typically encountered in biomedical applications. The pressure transducer consists of a thin silicon diaphragm containing four strain-sensitive resistors, and is fabricated using silicon monolithic integrated-circuit technology. The pressure transducers can be as small as 0.7 mm outer diameter, and are, as a result, suitable for mounting at the tip of a catheter. Pressure-induced stress in the diaphragm is sensed by the resistors, which are interconnected to form a Wheatstone bridge.

Angell, J. B.↗

NASA NTRS2004

Discrete-Time Demodulator Architectures for Free-Space Broadband Optical Pulse-Position Modulation

The objective of this work is to develop discrete-time demodulator architectures for broadband optical pulse-position modulation (PPM) that are capable of processing Nyquist or near-Nyquist data rates. These architectures are motivated by the numerous advantages of realizing communications demodulators in digital very large scale integrated (VLSI) circuits. The architectures are developed within a framework that encompasses a large body of work in optical communications, synchronization, and multirate discrete-time signal processing and are constrained by the limitations of the state of the art in digital hardware. This work attempts to create a bridge between theoretical communication algorithms and analysis for deep-space optical PPM and modern digital VLSI. The primary focus of this work is on the synthesis of discrete-time processing architectures for accomplishing the most fundamental functions required in PPM demodulators, post-detection filtering, synchronization, and decision processing. The architectures derived are capable of closely approximating the theoretical performance of the continuous-time algorithms from which they are derived. The work concludes with an outline of the development path that leads to hardware.

Gray, A. A.↗

DOE OSTI2023

PCB-on-DBC GaN Power Module Design with High-Density Integration and Double-Sided Cooling

Lateral gallium nitride (GaN) high-electron-mobility transistors (HEMTs) present better electrical characteristics compared to silicon or silicon carbide devices such as high switching speed and low gate charge, but also present additional challenges on the module design. Here, this paper discusses a high-density GaN power module with double-sided cooling, low inductance, on-package decoupling capacitors, and integrated gate drivers. The GaN dies as well as the gate drive are sandwiched between the printed circuit board (PCB) and direct bonded copper (DBC) substrate to achieve compact loop and double-sided cooling effect. Design considerations and thermal performance are analyzed. A module assembly procedure is presented utilizing the layer-by-layer attachment process. Finally, a 2.7 cm x 1.8 cm half-bridge GaN power module is fabricated and tested, achieving a low power-loop inductance of 1.03 nH, and the overshoot voltage of the switching waveform is less than 5% under a 400-V/25-A double-pulse test. The thermal resistance is 0.32 K/W, verified by simulation and experimental results. The design and assembly process can be generalized and applied to high power applications to achieve high power density and high performance.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2023

A Smart Silicon Carbide Power Module With Pulse Width Modulation Over Wi-Fi and Wireless Power Transfer-Enabled Gate Driver, Featuring Onboard State of Health Estimator and High-Voltage Scaling Capabilities: Preprint

A wide range of utility applications require controllable switches with features such as high-voltage (HV) blocking and high-current carrying capacity especially at high pulse width modulation (PWM) frequency. Low and medium voltage utility applications such as motor drives and flexible AC transmission systems (FACTS) as well as solid state transformers (SST) could also benefit from a low-cost HV switching module. Wide band gap (WBG) semiconductors such as SiC and GaN MOSFETs are considered to be the present and next generation device choices, although they have their own limitations. For relatively HV applications with demanding thermal management, SiC is still the only choice, and GaN dominates the low voltage regime. This manuscript proposes a new half bridge power MOSFET module that is suitable for conventional H-bridge of multilevel configurations used in HV applications. Constructed from bare SiC dies, this half bridge module takes advantage of (1) optimized MOSFET placement inside the module, (2) customized heat exchanger, manifold and cooling, (3) integrated gate driver module with PWM over wi-fi to eliminate the need for low voltage signals, (4) wireless power transfer (WPT) enabled gate driver and other ancillary circuits, (5) and the option to incorporate an onboard state of health (SOH) estimator module onboard. The entire architecture has been designed and built at National Renewable Energy Laboratory (NREL), Golden, CO.

baseplate design↗