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At least 235 records · Page 13

Quantum-enhanced sensing of displacements and electric fields with two-dimensional trapped-ion crystals

Fully controllable ultracold atomic systems are creating opportunities for quantum sensing, yet demonstrating a quantum advantage in useful applications by harnessing entanglement remains a challenging task. Here, we realize a many-body quantum-enhanced sensor to detect displacements and electric fields using a crystal of ~150 trapped ions. The center-of-mass vibrational mode of the crystal serves as a high- Q mechanical oscillator, and the collective electronic spin serves as the measurement device. By entangling the oscillator and collective spin and controlling the coherent dynamics via a many-body echo, a displacement is mapped into a spin rotation while avoiding quantum back-action and thermal noise. We achieve a sensitivity to displacements of 8.8 ± 0.4 decibels below the standard quantum limit and a sensitivity for measuring electric fields of 240 ± 10 nanovolts per meter in 1 second. Feasible improvements should enable the use of trapped ions in searches for dark matter.

Gilmore, Kevin A.↗

Ground-Based Investigations with the Cryogenic Hydrogen Maser

The room temperature hydrogen maser is an active atomic oscillator used as a high-frequency-stability local oscillator for radio astronomy, metrology, and spacecraft navigation, and in tests of fundamental physics. The cryogenic hydrogen maser (CHM) operates at 0.5 K, employing superfluid helium-coated walls to store the masing hydrogen atoms. We are investigating whether the CHM may provide better frequency stability than the room temperature hydrogen maser: one to three orders of magnitude improvement may be possible because of greatly reduced thermal noise and larger signal power. Exceptional frequency stability will be required for spacecraft tracking in future deep-space missions, for space-based tests of relativity and gravitation, and for local (i.e., flywheel) oscillators used with absolute frequency standards such as laser-cooled atomic fountains and linear ion traps. These new devices are passive high-resolution frequency discriminators. Alone, they cannot function as superior atomic clocks; their effective operation depends on being integrated with an active local oscillator with excellent short term stability - such as that possible with the CHM.

Walsworth, Ronald L.↗

Motional Squeezing for Trapped Ion Transport and Separation

Transport, separation, and merging of trapped ion crystals are essential operations for most large-scale quantum computing architectures. In this Letter, we develop a theoretical framework that describes the dynamics of ions in time-varying potentials with a motional squeeze operator, followed by a motional displacement operator. Using this framework, we develop a new, general protocol for trapped ion transport, separation, and merging. We show that motional squeezing can prepare an ion wave packet to enable transfer from the ground state of one trapping potential to another. Here, the framework and protocol are applicable if the potential is harmonic over the extent of the ion wave packets at all times. As illustrations, we discuss two specific operations: changing the strength of the confining potential for a single ion and separating same-species ions with their mutual Coulomb force. Both of these operations are, ideally, free of residual motional excitation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Energetics of silicon in the bulk and near surfaces of tungsten: a first-principles study

Abstract Siliconization of the tokamak walls is a candidate method to improve plasma confinement in fusion tokamaks containing tungsten plasma facing components (W PFCs). To understand the interactions of silicon (Si) with W, the Si behavior in bulk W, and near three low-index W surfaces ((100), (110) and (111)) has been investigated using first-principles density functional theory. In bulk W, Si interstitial atoms have a low solution ability and high mobility, and Si atoms can be strongly trapped by W vacancies. The interaction between two Si adatoms is responsible for the stability of adatom superstructures on W surfaces, consistent with previous experimental observation (Tsong and Casanova 1981 Phys. Rev. Lett. 47 113). Although the coverage dependence of Si adsorption and diffusion energetics on surfaces is related to surface orientation, the W(110) surface has lower Si adsorption affinity and higher Si diffusivity than either the W(111) or W(100) surfaces. The most stable Si adatom superstructure on W surfaces is: square c(2 × 2) pattern on W(100) covered with 0.5 ML Si; rectangular c(4 × 2) pattern on W(110) with 0.25 ML Si; and rhombus p(1 × 1) pattern on W(111) with 1 ML Si. The coverage dependence of Si mobility on/toward W surfaces is generally related to the stability of the Si superstructures as a function of coverage on each surface. Interestingly, Si adatoms prefer to transport below the surface and into W subsurface by an exchange mechanism with W atoms, indicating the likelihood of epitaxial growth of W silicide layers on W surfaces during the operation of W PFCs.

Yang, L. (ORCID:0000000322166071)↗

Laser-free trapped-ion entangling gates with simultaneous insensitivity to qubit and motional decoherence

The dominant error sources for state-of-the-art laser-free trapped-ion entangling gates are decoherence of the qubit state and the ion motion. The effect of these decoherence mechanisms can be suppressed with additional control fields or with techniques that have the disadvantage of reducing gate speed. In this study, we propose using a near-motional-frequency magnetic field gradient to implement a laser-free gate that is simultaneously resilient to both types of decoherence, does not require additional control fields, and has a relatively small cost in gate speed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Entangling-gate error from coherently displaced motional modes of trapped ions

Entangling gates in trapped-ion quantum computers are most often applied to stationary ions with initial motional distributions that are thermal and close to the ground state, while those demonstrations that involve transport generally use sympathetic cooling to reinitialize the motional state prior to applying a gate. Future systems with more ions, however, will face greater nonthermal excitation due to increased amounts of ion transport and exacerbated by longer operational times and variations over the trap array. In addition, pregate sympathetic cooling may be limited due to time costs and laser access constraints. In this paper, we analyze the impact of such coherent motional excitation on entangling-gate error by performing simulations of Mølmer-Sørenson (MS) gates on a pair of trapped-ion qubits with both thermal and coherent excitation present in a shared motional mode at the start of the gate. Here, we quantify how a small amount of coherent displacement erodes gate performance in the presence of experimental noise, and we demonstrate that adjusting the relative phase between the initial coherent displacement and the displacement induced by the gate or using Walsh modulation can suppress this error. We then use experimental data from transported ions to analyze the impact of coherent displacement on MS-gate error under realistic conditions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

$β$-delayed neutron emission studies of 137,138 I and 144,145 Cs performed with trapped ions

A detailed study of the β-delayed neutron emission properties of 137,138 I and 144,145 Cs has been performed by confining ions in the Beta-decay Paul Trap. The daughter ions following β decay emerge from the trapped-ion cloud with negligible scattering allowing reconstruction of the recoil-ion energy from the time of flight. From this information, the neutron-emission branching ratios and neutron-energy spectra were deduced. The results for the 137 I and 144,145 Cs decays are in agreement with previous results performed using direct neutron-detection techniques. In the case of 138 I, a branching ratio of 6.18(50)% is obtained, yielding a value consistent with the more recent results, which are a factor of two larger than measurements made prior to 1978.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Trapped Electrons and Ions as Particle Detectors

Electrons and ions trapped with electromagnetic fields have long served as important high-precision metrological instruments, and more recently have also been proposed as a platform for quantum information processing. Here we point out that these systems can also be used as highly sensitive detectors of passing charged particles, due to the combination of their extreme charge-to-mass ratio and low-noise quantum readout and control. In particular, these systems can be used to detect energy depositions many orders of magnitude below typical ionization scales. As illustrations, we suggest some applications in particle physics. We outline a nondestructive time-of-flight measurement capable of sub-eV energy resolution for slowly moving, collimated particles. We also show that current devices can be used to provide competitive sensitivity to models where ambient dark matter particles carry small electric millicharges $\ll$e. Furthermore, our calculations may also be useful in the characterization of noise in quantum computers coming from backgrounds of charged particles.

47 OTHER INSTRUMENTATION↗

Ion energy distribution in an electron beam ion trap inferred from simulations of the trapped ion cloud

For this work, we have inferred the energy distribution of trapped ions in an electron beam ion trap (EBIT) from simulations of the spatial distribution of Fe 13+ ions and a comparison with measured visible light images of the ion cloud. We simulated the cloud of Fe 13+ ions by computing ion trajectories in the EBIT for different ion energy distributions used to initialize the trajectories. We then performed a least-squares fit to infer the ion energy distribution that best reproduced the measured ion cloud. These best-fit distributions were typically non-Maxwellian. For electron beam energies of 395–475 eV and electron beam currents of 1–9 mA, we find that the average ion energy is in the range of 10–300 eV. We also find that the average ion energy increases with increasing beam current approximately as $\langle$E$\rangle$ ≈ 25 I e eV, where I e is the electron beam current in mA. We have also compared our results to Maxwell-Boltzmann-distribution ion clouds. We find that our best-fit non-thermal distributions have an $\langle$E$\rangle$ that is less than half that of the T from the best-fit Maxwell-Boltzmann distributions ($\langle$E$\rangle$/q)/T=0.41 ± 0.05.

74 ATOMIC AND MOLECULAR PHYSICS↗

Characterization of the microstructure of yttrium hydride under proton irradiation

High moderation per unit volume solid moderator materials like yttrium hydride (YH x ) are necessary for compact nuclear microreactors. However, the phase stability and hydrogen transport processes of YH x under high-temperature irradiation are largely unknown. Proton irradiation was conducted on YH x at 300 °C and 580 °C to 0.2 dpa using 1 MeV or 2 MeV protons in a high-vacuum environment. The hydrogen concentration was determined before and after irradiation using elastic recoil detection analysis, and microstructural evolution was examined via post-irradiation scanning transmission electron microscopy and Raman spectroscopy. Dislocation loops and cavities were observed in all conditions; their distribution was correlated with the bombarding proton energy and ion irradiation temperature. This work revealed that hydrogen retention is proportional to the formation of traps for hydrogen gas atoms and identified pathways for hydrogen release. The relative contributions of bulk or fast diffusion paths, such as grain boundaries, delamination boundaries, and stacking faults are discussed; the primary mechanisms of hydrogen loss are likely based on diffusion, ruling out artefacts of the experimental design. In conclusion, the study suggests proton irradiation may be a strong surrogate to study hydrogen transport in hydride moderator materials under irradiation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

In situ transmission electron microscopy with dual ion beam irradiation and implantation

To study the helium effects and their interactions with displacement damage in irradiated materials, an in situ dual-ion beam irradiation capability with transmission electron microscopy was recently established at the IVEM-Tandem Facility at Argonne National Laboratory. Pure nickel was irradiated in situ individually with 1 MeV Kr ions for displacement damage study, 16 keV He ions for helium implantation, and simultaneously with 1 MeV Kr ions and 16 keV He ions at the rate of 1 at.% He/dpa to study the interaction of helium and displacement damage at 500 degrees C. Helium bubbles were formed and segregated within dislocation loops during the He implantation experiment and no bubbles were observed outside the loops. The loop size increased with increasing helium concentration. In contrast, helium bubbles were formed uniformly in the matrix when nickel was irradiated simultaneously with 1 MeV Kr ions and 16 keV He ions. Overall, it is suggested that the uniformly-distributed defect clusters formed under 1 MeV Kr ion irradiation serve as trapping sites of helium atoms resulting in homogeneous nucleation of helium bubbles under the dualion beam irradiation in nickel.

36 MATERIALS SCIENCE↗

Realistic simulations of spin squeezing and cooperative coupling effects in large ensembles of interacting two-level systems

We describe an efficient numerical method for simulating the dynamics of interacting spin ensembles in the presence of dephasing and decay. The method builds on the discrete truncated Wigner approximation for isolated systems, which combines the mean-field dynamics of a spin ensemble with a Monte Carlo sampling of discrete initial spin values to account for quantum correlations. Here we show how this approach can be generalized for dissipative spin systems by replacing the deterministic mean-field evolution by a stochastic process, which describes the decay of coherences and populations while preserving the length of each spin. We demonstrate the application of this technique for simulating nonclassical spin-squeezing effects or the dynamics and steady states of cavity QED models with 10 5 interacting two-level systems. This opens up the possibility to perform accurate real-scale simulations of a diverse range of experiments in quantum optics or with solid-state spin ensembles under realistic laboratory conditions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Manipulating Growth and Propagation of Correlations in Dipolar Multilayers: From Pair Production to Bosonic Kitaev Models

Here, we study the nonequilibrium dynamics of dipoles confined in multiple stacked two-dimensional layers realizing a long-range interacting quantum spin 1/2 XXX model. We demonstrate that strong in-plane interactions can protect a manifold of collective layer dynamics. This then allows us to map the many-body spin dynamics to bosonic models. In a bilayer configuration we show how to engineer the paradigmatic two-mode squeezing Hamiltonian known from quantum optics, resulting in exponential production of entangled pairs and generation of metrologically useful entanglement from initially prepared product states. In multilayer configurations we engineer a bosonic variant of the Kitaev model displaying chiral propagation along the layer direction. Our study illustrates how the control over interactions, lattice geometry, and state preparation in interacting dipolar systems uniquely afforded by AMO platforms such as Rydberg and magnetic atoms, polar molecules, or trapped ions allows for the control over the temporal and spatial propagation of correlations for applications in quantum sensing and quantum simulation.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Benchmarking Quantum Simulators Using Ergodic Quantum Dynamics

Here we propose and analyze a sample-efficient protocol to estimate the fidelity between an experimentally prepared state and an ideal target state, applicable to a wide class of analog quantum simulators without advanced spatiotemporal control. Our protocol relies on universal fluctuations emerging from generic Hamiltonian dynamics, which we discover in the present work. It does not require fine-tuned control over state preparation, quantum evolution, or readout capability, while achieving near optimal sample complexity: a percent-level precision is obtained with ~103 measurements, independent of system size. Furthermore, the accuracy of our fidelity estimation improves exponentially with increasing system size. We numerically demonstrate our protocol in a variety of quantum simulator platforms, including quantum gas microscopes, trapped ions, and Rydberg atom arrays. We discuss applications of our method for tasks such as multiparameter estimation of quantum states and processes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Scalable Circuit Cutting and Scheduling in a Resource-constrained and Distributed Quantum System

Despite quantum computing's rapid development, current systems remain limited in practical applications due to their limited qubit count and quality. Various technologies, such as superconducting, trapped ions, and neutral atom quantum computing technologies are progressing towards a fault tolerant era, however they all face a diverse set of challenges in scalability and control. Recent efforts have focused on multi-node quantum systems that connect multiple smaller quantum devices to execute larger circuits. Future demonstrations hope to use quantum channels to couple systems, however current demonstrations can leverage classical communication with circuit cutting techniques. This involves cutting large circuits into smaller subcircuits and reconstructing them post-execution. However, existing cutting methods are hindered by lengthy search times as the number of qubits and gates increases. Additionally, they often fail to effectively utilize the resources of various worker configurations in a multi-node system. To address these challenges, we introduce FitCut, a novel approach that transforms quantum circuits into weighted graphs and utilizes a community-based, bottom-up approach to cut circuits according to resource constraints, e.g., qubit counts, on each worker. FitCut also includes a scheduling algorithm that optimizes resource utilization across workers. Implemented with Qiskit and evaluated extensively, FitCut significantly outperforms the Qiskit Circuit Knitting Toolbox, reducing time costs by factors ranging from 3 to 2000 and improving resource utilization rates by up to 3.88 times on the worker side, achieving a system-wide improvement of 2.86 times.

Kan, Shuwen [Fordham University]↗

Probing the Atomic Scale Mechanisms of Time Dependent Dielectric Breakdown in Si/SiO 2 MOSFETs (June 2022)

Here we report on an atomic-scale study of trap generation in the initial/intermediate stages of time-dependent dielectric breakdown (TDDB) in high-field stressed (100) Si/SiO2 MOSFETs using two powerful analytical techniques: electrically detected magnetic resonance (EDMR) and near-zero-field magnetoresistance (NZFMR). We find the dominant EDMR-sensitive traps generated throughout the majority of the TDDB process to be silicon dangling bonds at the (100) Si/SiO2 interface (Pb0 and Pb1 centers) for both the spin-dependent recombination (SDR) and trap-assisted tunneling (SDTAT) processes. We find this generation to be linked to both changes in the calculated interface state densities as well as changes in the NZFMR spectra for recombination events at the interface, indicating a redistribution of mobile magnetic nuclei which we conclude could only be due to the redistribution of hydrogen at the interface. Additionally, we observe the generation of traps known as E’ centers in EDMR measurements at lower experimental temperatures via SDR measurements at the interface. Our work strongly suggests the involvement of a rate-limiting step in the tunneling process between the silicon dangling bonds generated at the interface and the ones generated throughout the oxide.

36 MATERIALS SCIENCE↗