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At least 235 records · Page 13

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NASA NTRS2004

Single-event upset in highly scaled commercial silicon-on-insulator PowerPc microprocessors

Single event upset effects from heavy ions are measured for Motorola and IBM silicon-on-insulator (SOI) microprocessors with different feature sizes, and core voltages. The results are compared with results for similar devices with build substrates. The cross sections of the SOI processors are lower than their bulk counterparts, but the threshold is about the same, even though the charge collections depth is more than an order of magnitude smaller in the SOI devices. The scaling of the cross section with reduction of feature size and core voltage dependence for SOI microprocessors discussed.

single event upset (SEU)↗

NASA NTRS1988

Exposed high-voltage source effect on the potential of an ionospheric satellite

A pulsed, high-voltage source, which is able to draw a current from the surrounding plasma, is seen to induce large changes in the potential of an ionospheric satellite (the Iowa Plasma Diagnostics Package flown on Space Shuttle flight STS-51F). This, in turn, may affect the operation of other instruments that use the chassis of the satellite as a ground for electrical circuits. The magnitude of the change in satellite potential is dependent upon both the orientation of the high-voltage source, relative to the plasma flow, and the characteristics of the high-voltage source. When the satellite is grounded to the Shuttle Orbiter, this effect is sufficient to change the potential of the Orbiter by a small, but noticeable, amount.

Tribble, A. C.↗

NASA NTRS1999

Thin-Film Ferroelectric Tunable Microwave Devices Being Developed

Electronically tunable microwave components have become the subject of intense research efforts in recent years. Many new communications systems would greatly benefit from these components. For example, planned low Earth orbiting satellite networks have a need for electronically scanned antennas. Thin ferroelectric films are one of the major technologies competing to fill these applications. When a direct-current (dc) voltage is applied to ferroelectric film, the dielectric constant of the film can be decreased by nearly an order of magnitude, changing the high-frequency wavelength in the microwave device. Recent advances in film growth have demonstrated high-quality ferroelectric thin films. This technology may allow microwave devices that have very low power and are compact, lightweight, simple, robust, planar, voltage tunable, and affordable. The NASA Lewis Research Center has been designing, fabricating, and testing proof-of-concept tunable microwave devices. This work, which is being done in-house with funding from the Lewis Director's Discretionary Fund, is focusing on introducing better microwave designs to utilize these materials. We have demonstrated Ku- and K-band phase shifters, tunable local oscillators, tunable filters, and tunable diplexers. Many of our devices employ SrTiO3 as the ferroelectric. Although it is one of the more tunable and easily grown ferroelectrics, SrTiO3 must be used at cryogenic temperatures, usually below 100 K. At these temperatures, we frequently use high-temperature superconducting thin films of YBa2Cu3O7-8 to carry the microwave signals. However, much of our recent work has concentrated on inserting room-temperature ferroelectric thin films, such as BaxSr1- xTiO3 into these devices. The BaxSr1-xTiO3 films are used in conjuction with normal metal conductors, such as gold.

VanKeuls, Frederick W.↗

DOE OSTI2020

Nanoparticle-Enhanced Plasma Discharge Using Nanosecond High-Voltage Pulses

By discharging nanosecond high-voltage (5 kV) pulses across an insulating substrate containing Au, Pt, or Cu nanoparticles, a 3 order of magnitude (1000×) enhancement in the generation of plasma can be achieved through local field enhancement on the surface of the nanoparticles. The low-temperature nature of this transient plasma is crucial to maintaining the structural integrity of these delicate nanoparticles. These nanoparticles provide up to a 1000-fold enhancement in the generation of the plasma, which is localized to the surface of the nanoparticles where it is potentially useful (e.g., for catalysis). Additionally, we performed both time-domain and frequency-domain calculations of the electromagnetic response of the nanoparticles based on high-resolution transmission electron microscope (HRTEM) images, which show local field enhancement of the nanosecond high-voltage pulse on the order of 3×. Since the plasma initiation depends exponentially on the peak electric field strength, this 3-fold increase in the local electric field can result in a several orders of magnitude increases in the generation of plasma at a given applied external field strength. In order to rule out plasmon-resonance enhancement, which is often associated with small metal nanoparticles, we performed finite difference time domain (FDTD) simulations in the optical frequency domain, which show that the effect of plasmon resonance is negligible for Pt nanoparticles. We therefore attribute the nanoparticle-based enhancement to the generation of plasma (an electrostatic effect) rather than enhanced coupling of light from the near field to the far field via the plasmon resonance phenomenon (an optical effect).

36 MATERIALS SCIENCE↗

DOE OSTI2022

Results from an international interlaboratory study on light‐ and elevated temperature‐induced degradation in solar modules

Abstract This paper reports the results of an international interlaboratory comparison study on light‐ and elevated temperature‐induced degradation (LETID) on crystalline silicon photovoltaic (PV) modules. A large global network of PV module manufacturers and PV testing laboratories collaborated to design a protocol for LETID detection and screen a large and diverse set of prototype modules for LETID. Results across labs indicate the reproducibility of LETID testing is likely within ±1% of maximum power (P MP ). In intentionally engineered LETID‐sensitive modules, mean degradation after the prescribed detection stress is roughly 6% P MP . In other module types the LETID sensitivity is smaller, and in some we observe essentially negligible degradation attributable to LETID. In LETID‐sensitive modules, both open‐circuit voltage (V OC ) and short‐circuit current (I SC ) degrade by a roughly similar magnitude. We observe, as do previous studies, that LETID affects each cell in a module differently. An investigation of the potential mismatch losses caused by nonuniform LETID degradation found that mismatch loss is insignificant compared to the estimated loss of cell I SC , which drives loss of module I SC . Overall, this work has helped inform the creation of a forthcoming standard technical specification for LETID testing of PV modules, IEC TS 63342 ED1, and should aid in the interpretation of results from that and other LETID tests.

14 SOLAR ENERGY↗

DOE OSTI2020

Effect of net direct current on the properties of radio frequency sheaths: simulation and cross-code comparison

In order to understand, predict and control ion cyclotron range of frequency (ICRF) interactions with tokamak scrape-off layer plasmas, computational tools which can model radio frequency (RF) sheaths are needed. In particular, models for the effective surface impedance and DC rectified sheath potentials may be coupled with full wave RF simulation codes to predict self-consistent wave fields near surfaces and the resulting power dissipation and plasma-material interactions from ion sputtering. In this study, previous work assuming zero net DC current flow through the sheath is generalized to allow the surface to collect net positive or negative current, as is often observed in experiments. The waveforms, DC potential and RF admittance are investigated by means of analytical theory, nonlinear fluid and particle-in-cell (PIC) codes. Cross-code comparisons provide detailed model verification and elucidate the roles of ion and electron kinetics. When the sheath draws negative (positive) DC current, the voltage rectification is reduced (increased) compared with the zero-current case, and the magnitude of both the real and imaginary parts of the admittance are increased (reduced). In conclusion, a previous four-input parametrization of the sheath rectification and admittance properties is generalized to include a fifth parameter describing the DC sheath current.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

DOE OSTI2020

Destructive reverse bias pinning in perovskite/silicon tandem solar modules caused by perovskite hysteresis under dynamic shading

In this work, we demonstrate how perovskite hysteresis can result in permanent reductions in power output in perovskite/silicon tandem modules—including irreversible hotspot-induced damage—from only brief periods of shading. We show that reverse bias events in which a perovskite cell is biased above a threshold voltage—which in this work we find to be as low as –1.1 V—produces a temporary reduction in power output that is of sufficient magnitude to keep the cell pinned in reverse bias after the shading event ends. As a hysteretic phenomena, this crucial failure mode may be overlooked by static models of perovskite-based solar cells. Higher reverse bias voltages exacerbate the temporary reduction in short-circuit photocurrent, which is also sensitive to the level of illumination under reverse bias. Numerical device modelling demonstrates that this effect is consistent with our understanding of perovskite hysteresis as a consequence of mobile ion-electron coupling controlling rates of non-radiative recombination over time. Measurements of the dynamic response of single-junction perovskite cells are extrapolated to two-terminal and four-terminal perovskite/silicon tandem module modelling. We validate these models with measurements from an equivalent electronic circuit that represents a two-terminal perovskite–silicon tandem mini module. Two module-level solutions are discussed that address this issue, which includes increasing the number of bypass diodes and choosing better suited silicon bottom cells with higher shunter resistance in two-terminal tandem modules.

14 SOLAR ENERGY↗

DOE OSTI2024

Development of AlGaN‐Based Deep‐Ultraviolet Avalanche Photodetectors—Toward Their Intrinsic Characteristics

Al 0.6 Ga 0.4 N deep‐UV p–i–n avalanche photodiodes (APDs) are demonstrated grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) c‐plane aluminum nitride (AlN) bulk substrate and fabricated both with and without an ion implantation process for mesa‐edge electric‐field termination. Three design considerations are taken into account: the optical absorption of the AlN bulk substrate, the photosensitivity of the APD, and the breakdown electric field. The MOCVD growth conditions of the AlGaN APD layers are optimized. Then, a detailed description of the seven device fabrication steps of the APDs is provided, which includes nitrogen ion implantation. The APDs fabricated by the ion implant process exhibit a dark‐current density under low reverse bias ≈1 × 10 −9 A cm −2 . This is one order of magnitude lower than the APD fabricated without ion implantation from the same wafer. The breakdown voltage of the APD is ≈−140 V. The calculated optical gain of the ion‐implanted APD beyond avalanche breakdown is ≈5.2 × 10 5 (current limited) and the device has an average zero‐bias photoresponse of ≈68 mA W −1 at a wavelength of 250 nm.

Jeong, Hoon [Department of Electronic Engineering ↗

DOE OSTI2023

Black Start of Unbalanced Microgrids Harmonizing Single- and Three-Phase Grid-Forming Inverters

As power systems are transforming with increasing penetrations of inverter-based resources (IBRs), system restoration using IBRs has drawn attention. Using distributed grid-forming (GFM) assets located near critical loads, either three-phase or single-phase, to establish microgrid voltages in the absence of a bulk grid, a distribution system could obtain high system survivability. For swift and secure recovery of a critical load in a single-phase lateral, local single-phase GFM inverters can form a microgrid, and then it can be combined with a neighbouring grid with the inverters remaining in GFM mode for voltage and frequency regulation until the bulk grid comes online. It leads to dynamic interoperation of single-phase GFM inverters with three-phase ones in the black start process. This paper studies the novel approach with electromagnetic transient (EMT) simulations. To evaluate the potential and the technical challenges of the heterogeneous IBR-driven black start, three-phase and single-phase GFM inverter models are developed, including negative-sequence control for voltage balance and a phase-by-phase current limiter (three-phase) and current magnitude limiter (single-phase). To examine dynamic aspects of the black-start process, the EMT simulation also models transformer and motor dynamics emulating their inrush and startup behavior as well as network dynamics. Involvement of grid-following assets to facilitate the black-start process is also modeled. By allowing multiple GFM inverters to collectively black start without leader-follower coordination, regardless of phases, a system can achieve extreme resilience. An inverter-driven black start of a heavily unbalanced 2-MVA distribution feeder using 1 three-phase and 3 single-phase GFM inverters is demonstrated. The simulation shows the heterogeneous system can maintain stability with the single-phase GFM dynamics coupled with the three-phase one.

grid-forming inverter↗

NASA NTRS1976

Production of Mg and Al Auger electrons by noble gas ion bombardment of Mg and Al surfaces

Relative production efficiencies of Mg and Al Auger electrons by He, Ne, Ar, Kr, and Xe ion bombardment are reported as a function of ion energy for energies not exceeding 3 keV. The experimental apparatus employed consisted of a LEED-Auger system equipped with an ion gun and a four-grid retarding-potential analyzer. It is found that: (1) the shape of the ion-excited Auger signal was independent of the rare gas and quite symmetric; (2) the Al signal was about an order of magnitude smaller than the Mg signal for a given bombarding species and ion-gun voltage; (3) no signal was observed for He(+) bombardment under any of the experimental conditions; (4) signal strengths were independent of temperature and ion dose; (5) the Auger production efficiencies differed by no more than a factor of two among the different gases - except for He(+) - on a given metal; (6) all the signal strengths increased with increasing ion-gun voltage, with no maximum exhibited; and (7) the apparent threshold energy for the Al signal was higher than that for the Mg signal. The differences between the results for the two metals are attributed to the fact that the Al 2p orbital lies deeper in energy and closer to the nucleus than the corresponding Mg orbital.

Ferrante, J.↗

NASA NTRS1981

Automatic gain control

An automatic gain control (AGC), designed to operate with the prototype Loran-C receiver, is described. The device is used to eliminate error which occurs when signals are received at different magnitudes. The automatic gain control is a three transistor circuit which requires a constant dc voltage of 8 volts. Tests conclude that this value may be in the range of 4 to 12 v without change in circuit performance. Two transistors are cascaded to pass and amplify the input signal. Their gain is controlled by a third transistor which itself is controlled by an external AGC voltage between 0 and 8 volts dc. The integrated circuit used is an 8 pin chip, which is a differential cascade amplifier designed for use in communications operating at frequencies from dc to 120 MHz. The integrated circuit was balanced for AGC capabilities, and has a wide operating current range. The maximum input current at pins 1 and 5 is 0.1 mAmps. AGC testing is described.

Roman, J. P.↗

NASA NTRS1989

Distortion and regulation characterization of a Mapham inverter

Output voltage Total Harmonic Distortion (THD) of a 20kHz, 6kVA Mapham resonant inverter is characterized as a function of its switching-to-resonant frequency ratio, f sub s/f sub r, using the EASY5 engineering analysis system. EASY5 circuit simulation results are compared with hardware test results to verify the accuracy of the simulations. The effects of load on the THD versus f sub s/f sub r ratio is investigated for resistive, leading, and lagging power factor load impedances. The effect of the series output capacitor on the Mapham inverter output voltage distortion and inherent load regulation is characterized under loads of various power factors and magnitudes. An optimum series capacitor value which improves the inherent load regulation to better than 3 percent is identified. The optimum series capacitor value is different than the value predicted from a modeled frequency domain analysis. An explanation is proposed which takes into account the conduction overlap in the inductor pairs during steady-state inverter operation, which decreases the effective inductance of a Mapham inverter. A fault protection and current limit method is discussed which allows the Mapham inverter to operate into a short circuit, even when the inverter resonant circuit becomes overdamped.

Sundberg, Richard C.↗

NASA NTRS1989

Distortion and regulation characterization of a Mapham inverter

Output-voltage total harmonic distortion (THD) of a 20-kHz, 6-kVA Mapham resonant inverter is characterized as a function of its switching-to-resonant frequency ratio, f(s)/f(r), using the EASY5 Engineering Analysis System. EASY5 circuit simulation results are compared with hardware test results to verify the accuracy of the simulations. The effects of load on the THD versus f(s)/f(r) is investigated for resistive, leading, and lagging power factor load impedances. The effect of the series output capacitor on the Mapham inverter output-voltage distortion and inherent load regulation is characterized under loads of various power factors and magnitudes. An optimum series capacitor value which improves the inherent load regulation to better than 3 percent is identified. The optimum series capacitor value is different from the value predicted from a modeled frequency domain analysis. An explanation is proposed which takes into account the conduction overlap in the inductor pairs during steady-state inverter operation, which decreases the effective inductance of a Mapham inverter. A fault protection and current limit method is discussed which allows the Mapham inverter to operate into a short circuit, even when the inverter resonant circuit becomes overdamped.

Sundberg, Richard C.↗

NASA NTRS1992

A new fabrication technique for back-to-back varactor diodes

A new varactor diode process has been developed in which much of the processing is done from the back of an extremely thin semiconductor wafer laminated to a low-dielectric substrate. Back-to-back BNN diodes were fabricated with this technique; excellent DC and low-frequency capacitance measurements were obtained. Advantages of the new technique relative to other techniques include greatly reduced frontside wafer damage from exposure to process chemicals, improved capability to integrate devices (e.g. for antenna patterns, transmission lines, or wafer-scale grids), and higher line yield. BNN diodes fabricated with this technique exhibit approximately the expected capacitance-voltage characteristics while showing leakage currents under 10 mA at voltages three times that needed to deplete the varactor. This leakage is many orders of magnitude better than comparable Schottky diodes.

Smith, R. Peter↗

DOE OSTI2023

Black Start of Unbalanced Microgrids Harmonizing Single- and Three-Phase Grid-Forming Inverters: Preprint

grid-forming inverter↗

NASA NTRS1986

Miniature metastable ionization detectors for exobiology flight experiments

The Metastable Ionization Detector (MID) is three orders of magnitude more sensitive than the thermal conductivity detectors used on previous flight instruments. The miniature MID provides scientists with a much smaller and highly sensitive detector for flight gas chromatographs. A miniature MID featuring an unconventional triaxial electrode configuration was developed and used routinely in the laboratory. Although much smaller and lighter than the commercial MID, its performance characteristics parallel those of the traditional design. The detector is compatible with the modulated voltage circuitry, also developed here, and thus can perform over an expanded response range of more than 7 orders magnitude. A micro volume version of a miniature MID, with an internal volume of less than 8 microliter, was recently designed is now being tested. The micro volume MID uses carrier gas flow rates of approx. 2cc/min thus eliminating the need for makeup gas when capillary columns are used.

Woeller, F. H.↗

NASA NTRS2008

Damage Diagnosis in Semiconductive Materials Using Electrical Impedance Measurements

Recent aerospace industry trends have resulted in an increased demand for real-time, effective techniques for in-flight structural health monitoring. A promising technique for damage diagnosis uses electrical impedance measurements of semiconductive materials. By applying a small electrical current into a material specimen and measuring the corresponding voltages at various locations on the specimen, changes in the electrical characteristics due to the presence of damage can be assessed. An artificial neural network uses these changes in electrical properties to provide an inverse solution that estimates the location and magnitude of the damage. The advantage of the electrical impedance method over other damage diagnosis techniques is that it uses the material as the sensor. Simple voltage measurements can be used instead of discrete sensors, resulting in a reduction in weight and system complexity. This research effort extends previous work by employing finite element method models to improve accuracy of complex models with anisotropic conductivities and by enhancing the computational efficiency of the inverse techniques. The paper demonstrates a proof of concept of a damage diagnosis approach using electrical impedance methods and a neural network as an effective tool for in-flight diagnosis of structural damage to aircraft components.

Ross, Richard W.↗

DOE OSTI2025

Self-Sensing Composites via an Embedded 3D-Printed PVDF-MoS 2 Nanosensor for Structural Health Monitoring

Carbon fiber (CF)-reinforced epoxy composites are widely used in vehicle applications, where early damage detection is crucial for reliability and safety. To address this need, we developed a self-sensing epoxy/CF composite by embedding a PVDF-MoS 2 nanosensor via an embedded 3D printing method. By harnessing the intrinsic curing kinetics of epoxy, we tailored its rheological properties to optimize the embedded printing process, enabling precise and reliable support for sensor filaments without compromising the composite’s structural and functional integrity. Through comprehensive rheological and kinetic analysis, we established a quantitative relationship among curing temperature, conversion rate, and resulting yield modulus─defining a narrow processing window essential for successful sensor integration. Specifically, we identified that an epoxy yield modulus range of 180–294 Pa and a conversion rate below 10% are critical to support the PVDF-MoS 2 filament architecture. Here, this embedded 3D printing method produces complex and multimaterial PVDF-MoS 2 sensors within an epoxy matrix with minimal deformation and reduced postprocessing, which is scalable and adaptable for industrial applications. Under cyclic loading, the embedded sensors exhibited stable signals under constant loads and increased voltage signals in response to crack formation (17–35% higher) and catastrophic failure (1 order of magnitude higher), effectively capturing structural changes in real time. This study demonstrates the potential of PVDF-MoS 2 nanocomposite sensor materials for real-time structural health monitoring in epoxy–CF composite systems, enabling early detection of defects and stress anomalies, significantly reducing the risk of unexpected failures, and enhancing structural reliability.

PVDF-MoS2 sensor↗