Impedance characteristics of irradiated thin films Progress report no. 1, 1 Jun. - 1 Dec. 1965
Impedance characteristics of irradiated thin films - resistance drift and infrared measurements on bismuth thin films
IMPEDANCE MEASUREMENT↗
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Thin Film Ceramic Strain Sensor Development for High Temperature Environments
The need for sensors to operate in harsh environments is illustrated by the need for measurements in the turbine engine hot section. The degradation and damage that develops over time in hot section components can lead to catastrophic failure. At present, the degradation processes that occur in the harsh hot section environment are poorly characterized, which hinders development of more durable components, and since it is so difficult to model turbine blade temperatures, strains, etc, actual measurements are needed. The need to consider ceramic sensing elements is brought about by the temperature limits of metal thin film sensors in harsh environments. The effort at the NASA Glenn Research Center (GRC) to develop high temperature thin film ceramic static strain gauges for application in turbine engines is described, first in the fan and compressor modules, and then in the hot section. The near-term goal of this research effort was to identify candidate thin film ceramic sensor materials and provide a list of possible thin film ceramic sensor materials and corresponding properties to test for viability. A thorough literature search was conducted for ceramics that have the potential for application as high temperature thin film strain gauges chemically and physically compatible with the NASA GRCs microfabrication procedures and substrate materials. Test results are given for tantalum, titanium and zirconium-based nitride and oxynitride ceramic films.
Wrbanek, John D.↗
A New Concept for Non-Volatile Memory: The Electric-Pulse Induced Resistive Change Effect in Colossal Magnetoresistive Thin Films
A novel electric pulse-induced resistive change (EPIR) effect has been found in thin film colossal magnetoresistive (CMR) materials, and has shown promise for the development of resistive, nonvolatile memory. The EPIR effect is induced by the application of low voltage (< 4 V) and short duration (< 20 ns) electrical pulses across a thin film sample of a CMR material at room temperature and under no applied magnetic field. The pulse can directly either increase or decrease the resistance of the thin film sample depending on pulse polarity. The sample resistance change has been shown to be over two orders of magnitude, and is nonvolatile after pulsing. The sample resistance can also be changed through multiple levels - as many as 50 have been shown. Such a device can provide a way for the development of a new kind of nonvolatile multiple-valued memory with high density, fast write/read speed, low power-consumption, and potential high radiation-hardness.
Liu, S. Q.↗
A Study of Cds Thin-film Vacuum-analog Triodes
Cadmium sulfide thin film vacuum analog triodes
ELECTRON TUBE↗
Conformal Thin Film Packaging for SiC Sensor Circuits in Harsh Environments
In this investigation sputtered silicon carbide annealed at 300 C for one hour is used as a conformal thin film package. A RF magnetron sputterer was used to deposit 500 nm silicon carbide films on gold metal structures on alumina wafers. To determine the reliability and resistance to immersion in harsh environments, samples were submerged in gold etchant for 24 hours, in BOE for 24 hours, and in an O2 plasma etch for one hour. The adhesion strength of the thin film was measured by a pull test before and after the chemical immersion, which indicated that the film has an adhesion strength better than 10(exp 8) N/m2; this is similar to the adhesion of the gold layer to the alumina wafer. MIM capacitors are used to determine the dielectric constant, which is dependent on the SiC anneal temperature. Finally, to demonstrate that the SiC, conformal, thin film may be used to package RF circuits and sensors, an LC resonator circuit was fabricated and tested with and without the conformal SiC thin film packaging. The results indicate that the SiC coating adds no appreciable degradation to the circuits RF performance. Index Terms Sputter, silicon carbide, MIM capacitors, LC resonators, gold etchants, BOE, O2 plasma
Scardelletti, Maximilian C.↗
LiCoO2 and SnO2 Thin Film Electrodes for Lithium-Ion Battery Applications
There is an increasing need for small dimension, ultra-lightweight, portable power supplies due to the miniaturization of consumer electronic devices. Rechargeable thin film lithium-ion batteries have the potential to fulfill the growing demands for micro-energy storage devices. However, rechargeable battery technology and fabrication processes have not kept paced with the advances made in device technology. Economical fabrication methods lending excellent microstructural and compositional control in the thin film battery electrodes have yet to be fully developed. In this study, spin coating has been used to demonstrate the flexibility of the approach to produce both anode (SnO2) and cathode (LiCoO2) thin films. Results on the microstructure crystal structure and electrochemical properties of the thin film electrodes are described and discussed.
Maranchi, Jeffrey P.↗
X ray, extreme and far ultraviolet optical thin films for space applications
Far and extreme ultraviolet optical thin film filters find many uses in space astronomy, space astrophysics, and space aeronomy. Spacebased spectrographs are used for studying emission and absorption features of the earth, planets, sun, stars, and the interstellar medium. Most of these spectrographs use transmission or reflection filters. This requirement has prompted a search for selective filtering coatings with high throughput in the FUV and EUV spectral region. Important progress toward the development of thin film filters with improved efficiency and stability has been made in recent years. The goal for this field is the minimization of absorption to get high throughput and enhancement of wavelength selection. The Optical Aeronomy Laboratory (OAL) at the University of Alabama in Huntsville has recently developed the technology to determine optical constants of bulk and film materials for wavelengths extending from x-rays (0.1 nm) to the FUV (200 nm), and several materials have been identified that were used for designs of various optical devices which previously have been restricted to space application in the visible and near infrared. A new design concept called the Pi-multilayer was introduced and applied to the design of optical coatings for wavelengths extending from x-rays to the FUV. Section 3 of this report explains the Pi-multilayer approach and demonstrates its application for the design and fabrication of the FUV coatings. Two layer Pi-stacks have been utilized for the design of reflection filters in the EUV wavelength range from 70 - 100 nm. In order to eliminate losses due to the low reflection of the imaging optics and increase throughput and out-of-band rejection of the EUV instrumentation we introduced a self-filtering camera concept. In the FUV region, MgF2 and LiF crystals are known to be birefringent. Transmission polarizers and quarterwave retarders made of MgF2 or LiF crystals are commercially available but the performances are poor. New techniques for the design of the EUV and FUV polarizers and quarterwave retarders are described in Section 5. X- and gamma-ray detectors rely on a measurement of the electron which is effected when a ray interacts with matter. The design of an x- and gamma-ray telescope to operate in a particular region of the spectrum is, therefore, largely dictated by the mechanism through which the rays interact. Energy selection and the focusing of the incident high energy rays can be achieved with spectrally selective high reflective multilayers. The design and spectral performance of narrowband reflective x-ray Pi-multilayers are presented in section 6.
Zukic, Muamer↗
Electromigration in thin-film photovoltaic module metallization systems
Electromigration as a possible thin-film module failure mechanism was investigated using several specially made, fully aluminized thin-film photovoltaic (TF-PV) modules. The effect of electromigration, as determined experimentally by measuring increases in electrical resistance across scribe lines, can be expressed as the product of a damage function, which correlates degradation rate with operating conditions such as current density and temperature, and a susceptibility function, which is defined by module design parameters, particularly aluminum purity and the configuration of the intercell region. Experimental measurements and derived acceleration factors suggest that open-circuit failure resulting from electromigration should not be a serious problem in present state-of-the-art TF-PV modules. Nevertheless, significant intercell resistance increases can result from long-term electromigration exposure, especially in future high-efficiency modules. The problem can be alleviated, however, by appropriate metallization applications and/or proper design of the intercell region.
Wen, L.↗
Advanced thin film thermocouples
The fabrication, materials characterization, and performance of thin film platinum rhodium thermocouples on gas turbine alloys was investigated. The materials chosen for the study were the turbine blade alloy systems MAR M200+Hf with NiCoCrAlY and FeCrAlY coatings, and vane alloy systems MAR M509 with FeCrAlY. Research was focussed on making improvements in the problem areas of coating substrate stability, adhesion, and insulation reliability and durability. Diffusion profiles between the substrate and coating with and without barrier coatings of Al2O3 are reported. The relationships between fabrication parameters of thermal oxidation and sputtering of the insulator and its characterization and performance are described. The best thin film thermocouples were fabricated with the NiCoCrAlY coatings which were thermally oxidized and sputter coated with Al2O3.
Kreider, K. G.↗
Investigation of Nonlinear Pressurization and Model Restart in MSC/NASTRAN for Modeling Thin Film Inflatable Structures
This paper is written for the purpose of providing an introduction and set of guidelines for the use of a methodology for NASTRAN eigenvalue modeling of thin film inflatable structures. It is hoped that this paper will spare the reader from the problems and headaches the authors were confronted with during their investigation by presenting here not only an introduction and verification of the methodology, but also a discussion of the problems that this methodology can ensue. Our goal in this investigation was to verify the basic methodology through the creation and correlation of a simple model. An overview of thin film structures, their history, and their applications is given. Previous modeling work is then briefly discussed. An introduction is then given for the method of modeling. The specific mechanics of the method are then discussed in parallel with a basic discussion of NASTRAN s implementation of these mechanics. The problems encountered with the method are then given along with suggestions for their work-a-rounds. The methodology is verified through the correlation between an analytical model and modal test results of a thin film strut. Recommendations are given for the needed advancement of our understanding of this method and ability to accurately model thin film structures. Finally, conclusions are drawn regarding the usefulness of the methodology.
Smalley, Kurt B.↗
Thin-Film Personal Communications and Telemetry System /TFPCTS/ Third quarterly report, 21 Jun. - 21 Sep. 1965
Thin film triode fabrication, metal base transistor, and circuit design for thin film personal communications and telemetry system
TRANSISTOR↗
Flash evaporation and thin films of cuprous sulfide, selenide, and telluride.
Thin films of cuprous sulfide, selenide and telluride prepared by flash evaporation, discussing resistivity and absorption coefficient
COPPER COMPOUND↗
Thin-film Sensors for Space Propulsion Technology
SSME components such as the turbine blades of the high pressure fuel turbopump are subjected to rapid and extreme thermal transients that contribute to blade cracking and subsequent failure. The objective was to develop thin film sensors for SSME components. The technology established for aircraft gas turbine engines was adopted to the materials and environment encountered in the SSME. Specific goals are to expand the existing thin film sensor technology, to continue developing improved sensor processing techniques, and to test the durability of aircraft gas turbine engine technology in the SSME environment. A thin film sensor laboratory is being installed in a refurbished clean room, and new sputtering and photoresist exposure equipment is being acquired. Existing thin film thermocouple technology in an SSME environment are being tested. Various coatings and their insulating films are being investigated for use in sensor development.
Kim, W. S.↗
Preparation and characteristics of superconducting cuprate thin films: Nd(2-x)Ce(x)CuO4 and substrated Bi-system
Characteristics of the electron-doped-type Nd(sub 2-x)Ce(sub x)CuO4 system and substituted Bi-system were studied using the high quality thin film samples grown by rf magnetron sputtering and/or subsequent heat treatment. The Nd(sub 2-x)Ce(sub x)CuO4 samples with excellent superconducting properties were obtained in thin films and their optical and X-ray photoelectron spectroscopy (XPS) studies were performed with regard to the Ce content and reducing treatment. Substituted BiSr-Ln-Cu-O thin films were prepared and growth conditions for Bi-system with 2-2-1-2 and 2-2-2-2 phases were found. Moreover, a new 2-2-1-2 phase in the simple Bi-Sr-Cu-O system was fabricated by thin film processing and 80 K superconductivity was obtained.
Adachi, H.↗
Bulk and thin films of FeTe: A Moessbauer study
Studies of bulk and thin films of FeTe using Moessbauer spectroscopy showed that FeTe has one noncubic Fe (+2) site which is 3d2 4s 4p3 hybridized. The presence of dangling bands was indicated in spectra of FeTe thin films. The films showed a tendency of texture formation. The substrate was observed to influence the film structure and nature of bonds in films.
Escue, W. T.↗
Enhanced fatigue and retention in ferroelectric thin film memory capacitors by post-top electrode anneal treatment
Thin film ferroelectric capacitors comprising a ferroelectric film sandwiched between electrodes for nonvolatile memory operations are rendered more stable by subjecting the capacitors to an anneal following deposition of the top electrode. The anneal is done so as to form the interface between the ferroelectric film and the top electrode. Heating in an air oven, laser annealing, or electron bombardment may be used to form the interface. Heating in an air oven is done at a temperature at least equal to the crystallization temperature of the ferroelectric film. Where the ferroelectric film comprises lead zirconate titanate, annealing is done at about 550 to 600 C for about 10 to 15 minutes. The formation treatment reduces the magnitude of charge associated with the nonswitching pulse in the thin film ferroelectric capacitors. Reduction of this charge leads to significantly more stable nonvolatile memory operations in both digital and analog memory devices. The formation treatment also reduces the ratio of change of the charge associated with the nonswitching pulse as a function of retention time. These improved memory devices exhibit greater performance in retention and reduced fatigue in memory arrays.
Thakoor, Sarita↗
Electrical-transport properties and microwave device performance of sputtered TlCaBaCuO superconducting thin films
The paper describes the processing and electrical transport measurements for achieving reproducible high-Tc and high-Jc sputtered TlCaBaCuO thin films on LaAlO3 substrates, for microelectronic applications. The microwave properties of TlCaBaCuO thin films were investigated by designing, fabricating, and characterizing microstrip ring resonators with a fundamental resonance frequency of 12 GHz on 10-mil-thick LaAlO3 substrates. Typical unloaded quality factors for a ring resonator with a superconducting ground plane of 0.3 micron-thickness and a gold ground plane of 1-micron-thickness were above 1500 at 65 K. Typical values of penetration depth at 0 K in the TlCaBaCuO thin films were between 7000 and 8000 A.
Subramanyam, G.↗
Extreme ultraviolet transmission of a synthetic diamond thin film
Measurements are presented of a thin film of synthetic diamond at various wavelengths in the extreme ultraviolet. The synthetic diamond combines the transmission properties of carbon with the strength, density, and ruggedness of a natural diamond. The Extreme Ultraviolet Transmission (EUV) of a film of the synthetic diamond has shown the existence of a thin surface layer of silicon, probably in the form of silicon carbide, which is not a contaminant layer.
Vallerga, John V.↗