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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Status of wraparound contact solar cells and arrays

Solar cells with wraparound contacts provide the following advantages in array assembly: (1) eliminate the need for discretely formed, damage susceptible series tabs; (2) eliminate the n gap problem by allowing the use of uniform covers over the entire cell surface; (3) allow a higher packing factor by reducing the additional series spacing formly required for forming, and routing the series tab; and (4) allow the cell bonding to the interconnect system to be a single-side function wherein series contacts can be made at the same time parallel contracts are made.

Baraona, C. R.↗
NASA NTRS1979

Transparent solar cell module

Modified solar cell module uses high transmission glass and adhesives, and heat dissipation to boost power per unit area by 25% (9.84% efficiency based on cell area at 60 C and 100 mW/sq cm flux). Design is suited for automatic production and is potentially more cost effective.

Antonides, G. J.↗
NASA NTRS1980

Improved multispectral solar cell array

Solar-collector system projects oval-shaped color-band images onto solar cells designed to be most efficient at specific wavelength. Image size can be altered by changing width of reflecting mirror of power of lens. Image intensity is thus kept at optimum level, preventing cells from overheating.

Redmann, J. J.↗
NASA NTRS1980

Investigation of contact metallization systems for solar cells

In conventional solar cells, evaporated Ti-Pd-Ag metallization system has been found reliable. However, for low cost terrestrial applications, its cost effectiveness may be questioned. Electroplated Ag and Cu have been investigated as replacements for evaporated Ag and have given results comparable to the evaporated Ti-Pd-Ag system.

Campbell, R. B.↗
NASA NTRS1982

Dip-Coating Fabrication of Solar Cells

Inexpensive silicon solar cells made by simple dip technique. Cooling shoes direct flow of helium on graphite-coated ceramic substrate to solidify film of liquid silicon on graphite surface as substrate is withdrawn from molten silicon. After heaters control cooling of film and substrate to prevent cracking. Gas jets exit at points about 10 mm from substrate surfaces and 6 to 10 mm above melt surface.

Koepke, B.↗
NASA NTRS1985

Some observations of heated gallium arsenide heteroface solar cells

GaAlAs/GaAs heteroface solar cells used in space offer advantages of higher operating temperatures and recovery from radiation damage using thermal annealing. Experiments were conducted to examine the effects on the room temperature photovoltaic properties of cells due to heating in a vacuum at temperatures encountered in radiation damage annealing. Some degradation of photovoltaic properties was observed for all the cells that were heated. The lifetime, due to heating, for a 20-percent degradation in output power was estimated for cells heated at 200 C and 400 C. The results for cells that were heated at 200 C for 1750 hours indicate a lifetime of at least 3 years. The results for cells that were heated at 400 C for 264 hours indicate that lifetimes in the range of 350 hours to 1400 hours may be expected. The results indicate that for cells that must be heated at 400 C the selection of fabrication techniques and materials is particularly important.

Friesen, W. J.↗
NASA NTRS1985

Silicon MINP solar cells

The MINP solar cell concept refers to a cell structure designed to be a base region dominated device. Thus, it is desirable that recombination losses are reduced to the point that they occur only in the base region. The most unique feature of the MINP cell design is that a tunneling contact is utilized for the metallic contact on the front surface. The areas under the collector grid and bus bar are passivated by a thin oxide of tunneling thickness. Efforts must also be taken to minimize recombination at the surface between grid lines, at the junction periphery and within the emitter. Results of both theoretical and experimental studies of silicon MINP cells are given. Performance calculations are described which give expected efficiencies as a function of base resistivity and junction depth. Fabrication and characterization of cells are discussed which are based on 0.2 ohm-cm substrates, diffused emitters on the order of 0.15 to 0.20 microns deep, and with Mg MIS collector grids. A total area AM 1 efficiency of 16.8% was achieved. Detailed analyses of photocurrent and current loss mechanisms are presented and utilized to discuss future directions of research. Finally, results reported by other workers are discussed.

Olsen, L. C.↗
NASA NTRS1984

Radiation damage and annealing of amorphous silicon solar cells

Amorphous silicon solar cells were irradiated with 1 MeV electrons at the Space Environmental Effects Laboratory of the NASA Langley Research Center. The cells accumulated a total fluence of 10 to the 14th, 10 to the 15th, and 10 to the 16th electrons per square centimeter and exhibited increasing degradation with each irradiation. This degradation was tracked by evaluating the I-V curves for AM0 illumination and the relative spectral response. The observed radiation damage was reversed following an anneal of the cells under vacuum at 200 C for 2 hours.

Byvik, C. E.↗
NASA NTRS1986

Radiation damage in proton irradiated indium phosphide solar cells

Indium phosphide solar cells exposed to 10 MeV proton irradiations were found to have significantly greater radiation resistance than either GaAs or Si. Performance predictions were obtained for two proton dominated orbits and one in which both protons and electrons were significant cell degradation factors. Array specific power was calculated using lightweight blanket technology, a SEP array structure, and projected cell efficiencies. Results indicate that arrays using fully developed InP cells should out-perform those using GaAs or Si in orbits where radiation is a significant cell degradation factor.

Weinberg, I.↗
NASA NTRS1987

Comparative radiation resistance, temperature dependence and performance of diffused junction indium phosphide solar cells

Indium phosphide solar cells whose p-n junctions were processed by the open tube capped diffusion and by the closed tube uncapped diffusion of sulfur into Czochralski-grown p-type substrates are compared. Differences found in radiation resistance were attributed to the effects of increased base dopant concentration. Both sets of cells showed superior radiation resistance to that of gallium arsenide cells, in agreement with previous results. No correlation was, however, found between the open-circuit voltage and the temperature dependence of the maximum power.

Weinberg, I.↗
NASA NTRS1989

InP shallow-homojunction solar cells

Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metalorganic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. Although calculations show that, as is the case with GaAs, a heterostructure is expected to be required for the highest efficiencies attainable, the material properties of InP give the shallow-homojunction structure a greater potential than in the case of GaAs. The best cells, which were those made by ion implantation, show open-circuit voltage (V sub oc) of 873 mV, short-circuit current of 357 A/sq m (35.7 mA/sq cm), and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. Detailed modeling of the data indicates that a high front surface recombination velocity is responsible for the low blue response, that the carrier lifetime is high enough to allow good carrier collection from both the base and the emitter, and that the voltage is base-limited.

Keavney, Christopher↗
NASA NTRS1993

Radiation effects in heteroepitaxial InP solar cells

Heteroepitaxial InP solar cells, with GaAs substrates, were irradiated by 0.5 and 3 MeV protons and their performance, temperature dependency, and carrier removal rates determined as a function of fluence. The radiation resistance of the present cells was significantly greater than that of non-heteroepitaxial InP cells at both proton energies. A clear difference in the temperature dependency of V(sub oc), was observed between heteroepitaxial and homoepitaxial InP cells. The analytically predicted dependence of dV(sub oc)/dT on Voc was confirmed by the fluence dependence of these quantities. Carrier removal was observed to increase with decreasing proton energy. The results obtained for performance and temperature dependency were attributed to the high dislocation densities present in the heteroepitaxial cells while the energy dependence of carrier removal was attributed to the energy dependence of proton range.

Weinberg, I.↗
NASA NTRS1981

Metallization for large-area solar cells

In large area, low cost solar cells of any type, the contact and grid structure metallization is an important factor which has an effect on the efficiency of the solar cell and its reliability. The present investigation is concerned with aspects of solar cell efficiency. An optimized metallization design leads to minimum total power loss, which is related to a simultaneous minimization of ohmic voltage drops and of shading of the front surface of the cell by the overlaid metal. The requirements regarding the design for a low-loss metallization pattern for the front surface of large area solar cells are represented by a set of design rules listed in a table. The total shading and voltage drop on such cells can be held to about 5%. However, not every metallization process is suited for meeting the requirements of the low-cost design. The low losses can be achieved only by use of several bus lines containing a bulk conductor, such as a wire.

Wolf, M.↗
NASA NTRS1975

Effects of processing on the carrier lifetime in silicon solar cells

Measurements were taken to determine the effects that solar cell processing steps have on the minority carrier lifetime in silicon. The experimental work included measurements of diffusion lengths of the silicon at various stages of cell fabrication, of solar cell properties, and of the PN junction properties for ingots covering a wide range of doping and other ingot properties. Resistivities covered the range of 0.01 to 10 ohm-cm, and combinations of extreme concentrations (high and low) of dislocations and oxygen were included. The results showed that the major cell process steps did not usually cause any appreciable change in diffusion lengths. The solar cell currents obtained supported the diffusion length measurements. The effects of heavy doping concentrations on solar cell performance were studied. Attempts were made to relate the voltage behavior of the cells with the diode properties and the properties of the ingots.

Iles, P. A.↗
NASA NTRS1995

Results of the 1995 JPL balloon flight solar cell calibration program

The Jet Propulsion Laboratory (JPL) solar cell calibration program was conceived to produce reference standards for the purpose of accurately setting solar simulator intensities. The concept was to fly solar cells on a high-altitude balloon, to measure their output at altitudes near 120,000 ft (36.6 km), to recover the cells, and to use them as reference standards. The procedure is simple. The reference cell is placed in the simulator beam, and the beam intensity is adjusted until the reference cell reads the same as it read on the balloon. As long as the reference cell has the same spectral response as the cells or panels to be measured, this is a very accurate method of setting the intensity. But as solar cell technology changes, the spectral response of the solar cells changes also, and reference standards using the new technology must be built and calibrated. Until the summer of 1985, there had always been a question as to how much the atmosphere above the balloon modified the solar spectrum. If the modification was significant, the reference cells might not have the required accuracy. Solar cells made in recent years have increasingly higher blue responses, and if the atmosphere has any effect at all, it would be expected to modify the calibration of these newer blue cells much more so than for cells made in the past. JPL has been flying calibration standards on high-altitude balloons since 1963 and continues to organize a calibration balloon flight at least once a year. The 1995 flight was the 48th flight in this series. The 1995 flight incorporated 46 solar cell modules from 7 different participants. The payload included Si, amorphous Si, GaAs, GaAs/Ge, dual junction cells, top and bottom sections of dual junction cells, and a triple junction cell. A new data acquisition system was built for the balloon flights and flown for the first time on the 1995 flight. This system allows the measurement of current-voltage (I-V) curves for 20 modules in addition to measurement of modules with fixed loads as had been done in the past.

Anspaugh, B. E.↗
NASA NTRS1995

Straw man trade between multi-junction, gallium arsenide, and silicon solar cells

Multi-junction (MJ), gallium arsenide (GaAs), and silicon (Si) solar cells have respective test efficiencies of approximately 24%, 18.5% and 14.8%. Multi-junction and gallium arsenide solar cells weigh more than silicon solar cells and cost approximately five times as much per unit power at the cell level. A straw man trade is performed for the TRMM spacecraft to determine which of these cell types would have offered an overall performance and price advantage to the spacecraft. A straw man trade is also performed for the multi-junction cells under the assumption that they will cost over ten times that of silicon cells at the cell level. The trade shows that the TRMM project, less the cost of the instrument, ground systems and mission operations, would spend approximately $552 thousand dollars per kilogram to launch and service science in the case of the spacecraft equipped with silicon solar cells. If these cells are changed out for gallium arsenide solar cells, an additional 31 kilograms of science can be launched and serviced at a price of approximately $90 thousand per kilogram. The weight reduction is shown to derive from the smaller area of the array and hence reductions in the weight of the array substrate and supporting structure. If the silicon solar cells are changed out for multi-junction solar cells, an additional 45 kilograms of science above the silicon base line can be launched and serviced at a price of approximately $58 thousand per kilogram. The trade shows that even if the multi-junction arrays are priced over ten times that of silicon cells, a price that is much higher than projected, that the additional 45 kilograms of science are launched and serviced at $182 thousand per kilogram. This is still much less than original $552 thousand per kilogram to launch and service the science. Data and qualitative factors are presented to show that these figures are subject to a great deal of uncertainty. Nonetheless, the benefit of the higher efficiency solar cells for TRMM is far greater than the uncertainties in the analysis.

Gaddy, Edward M.↗
NASA NTRS1994

Modeling of high efficiency solar cells under laser pulse for power beaming applications

Solar cells have been used to convert sunlight to electrical energy for many years and also offer great potential for non-solar energy conversion applications. Their greatly improved performance under monochromatic light compared to sunlight, makes them suitable as photovoltaic (PV) receivers in laser power beaming applications. Laser beamed power to a PV array receiver could provide power to satellites, an orbital transfer vehicle, or a lunar base. Gallium arsenide (GaAs) and indium phosphide (InP) solar cells have calculated efficiencies of more than 50 percent under continuous illumination at the optimum wavelength. Currently high power free-electron lasers are being developed which operate in pulsed conditions. Understanding cell behavior under a laser pulse is important in the selection of the solar cell material and the laser. An experiment by NAsA lewis and JPL at the AVLIS laser facility in Livermore, CA presented experimental data on cell performance under pulsed laser illumination. Reference 5 contains an overview of technical issues concerning the use of solar cells for laser power conversion, written before the experiments were performed. As the experimental results showed, the actual effects of pulsed operation are more complicated. Reference 6 discusses simulations of the output of GaAs concentrator solar cells under pulsed laser illumination. The present paper continues this work, and compares the output of Si and GaAs solar cells.

Jain, Raj K.↗