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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Characterization of Lateral Amorphous Selenium Photodetectors for Low-Photon and VUV Detection at Cryogenic Temperatures

The performance of amorphous selenium (a-Se) as a cryogenic photodetector material is evaluated through a series of experiments using laterally structured devices operated in a custom optical test stand. These studies investigate the response of a-Se detectors to low-photon fluxes at high electric fields near avalanche conditions, the linearity of the photoconductive response over a wide dynamic range and the direct detection of narrowband 130 nm vacuum ultraviolet (VUV) illumination. At 87 K, matched-filter analysis shows reliable single-shot detection with efficiencies greater than or equal to 80 percent and area under the curve (AUC) greater than or equal to 0.85 using as few as approximately 6800 incident 401 nm photons, corresponding to approximately 3400 photons within field-active regions after accounting for geometric constraints. Measurements are performed at cryogenic temperatures using calibrated photon fluxes derived from a silicon photomultiplier reference and a characterized optical filter stack. Additional experiments using a tellurium-doped a-Se (a-SeTe) device explore the material's behavior under identical test conditions and demonstrate that avalanche is achievable in a-SeTe at cryogenic temperatures. The results demonstrate reproducible low-noise operation, VUV sensitivity and field-dependent gain behavior in a lateral a-Se architecture, representing the first reported observation of avalanche multiplication in laterally structured a-Se and a-SeTe devices at cryogenic temperatures. These findings support the potential integration of laterally structured a-Se devices into next-generation pixelated liquid-argon time projection chambers (TPCs) requiring scalable, high-field-compatible photon detection systems.

FOS: Physical sciences↗
NASA NTRS2013

Optimization of the Orbiting Wide-Angle Light Collectors (OWL) Mission for Charged-Particle and Neutrino Astronomy

OWL [1] uses the Earth's atmosphere as a vast calorimeter to fully enable the emerging field of charged-particle astronomy with high-statistics measurements of ultra-high-energy cosmic rays (UHECR) and a search for sources of UHE neutrinos and photons. Confirmation of the Greisen-Zatsepin-Kuzmin (GZK) suppression above approx. 4 x 10(exp 19) eV suggests that most UHECR originate in astrophysical objects. Higher energy particles must come from sources within about 100 Mpc and are deflected by approx. 1 degree by predicted intergalactic/galactic magnetic fields. The Pierre Auger Array, Telescope Array and the future JEM-EUSO ISS mission will open charged-particle astronomy, but much greater exposure will be required to fully identify and measure the spectra of individual sources. OWL uses two large telescopes with 3 m optical apertures and 45 degree FOV in near-equatorial orbits. Simulations of a five-year OWL mission indicate approx. 10(exp 6) sq km/ sr/ yr of exposure with full aperture at approx. 6 x 10(exp 19) eV. Observations at different altitudes and spacecraft separations optimize sensitivity to UHECRs and neutrinos. OWL's stereo event reconstruction is nearly independent of track inclination and very tolerant of atmospheric conditions. An optional monocular mode gives increased reliability and can increase the instantaneous aperture. OWL can fully reconstruct horizontal and upward-moving showers and so has high sensitivity to UHE neutrinos. New capabilities in inflatable structures optics and silicon photomultipliers can greatly increase photon sensitivity, reducing the energy threshold for n detection or increasing viewed area using a higher orbit. Design trades between the original and optimized OWL missions and the enhanced science capabilities are described.

Optimization↗
DOE OSTI2020

Counting of Hong-Ou-Mandel Bunched Optical Photons Using a Fast Pixel Camera

The uses of a silicon-pixel camera with very good time resolution (∼nanosecond) for detecting multiple, bunched optical photons is explored. We present characteristics of the camera and describe experiments proving its counting capabilities. We use a spontaneous parametric down-conversion source to generate correlated photon pairs, and exploit the Hong-Ou-Mandel (HOM) interference effect in a fiber-coupled beam splitter to bunch the pair onto the same output fiber. It is shown that the time and spatial resolution of the camera enables independent detection of two photons emerging simultaneously from a single spatial mode.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Single Photon Emitters Coupled to Photonic Wire bonds

This project will test the coupling of light emitted from silicon vacancy and nitrogen vacancy defects in diamond into additively manufactured photonic wire bonds toward integration into an "on-chip quantum photonics platform". These defects offer a room-temperature solid state solution for quantum information technologies but suffer from issues such as low activation rate and variable local environments. Photonic wire bonding will allow entanglement of pre-selected solid-state defects alleviating some of these issues and enable simplified integration with other photonic devices. These developments could prove to be key technologies to realize quantum secured networks for national security applications.

42 ENGINEERING↗
DOE OSTI2024

Telecom Networking with a Diamond Quantum Memory

Practical quantum networks require interfacing quantum memories with existing channels and systems that operate in the telecom band. Here we demonstrate low-noise, bidirectional quantum frequency conversion that enables a solid-state quantum memory to directly interface with telecom-band systems. In particular, we demonstrate conversion of visible-band single photons emitted from a silicon-vacancy ( Si V ) center in diamond to the telecom O band, maintaining low noise ( g 2 ( 0 ) < 0.1 ) and high indistinguishability ( V = 89 ± 8 % ). We further demonstrate the utility of this system for quantum networking by converting telecom-band time-bin pulses, sent across a lossy and noisy 50-km deployed fiber link, to the visible band and entangling them with a diamond quantum memory with fidelity F ≥ 87 ± 2.5 % . These results demonstrate the viability of Si V quantum memories integrated with telecom-band systems for scalable quantum networking applications. Published by the American Physical Society 2024

Physics↗
NASA NTRS1990

Photon detection with parallel asynchronous processing

An approach to photon detection with a parallel asynchronous signal processor is described. The visible or IR photon-detection capability of the silicon p(+)-n-n(+) detectors and the parallel asynchronous processing are addressed separately. This approach would permit an independent analog processing channel to be dedicated to every pixel. A laminar architecture consisting of a stack of planar arrays of the devices would form a 2D array processor with a 2D array of inputs located directly behind a focal-plane detector array. A 2D image data stream would propagate in neuronlike asynchronous pulse-coded form through the laminar processor. Such systems can integrate image acquisition and image processing. Acquisition and processing would be performed concurrently as in natural vision systems. The possibility of multispectral image processing is addressed.

Coon, D. D.↗
NASA NTRS1997

Few arc-minute and keV resolutions with the TIGRE Compton telescope

The tracking and imaging gamma ray experiment (TIGRE) Compton telescope concept can provide an angular resolution of a few arcmin, an energy resolution of a few keV and high sensitivity, while providing the wide field of view necessary for surveying and monitoring observations. Silicon and CdZnTe strip detectors are used to detect Compton pair events and determine their incident directions and energies. Above 400 keV, Compton recoil electrons are tracked through successive layers of thin silicon strip detectors. Compton scattered photons are detected with CdZnTe strip detectors. Pair electrons and positrons are tracked to provide high sensitivity observations in the 10 to 100 MeV range. Polarization studies are performed with large angle Compton scatter events. The TIGRE concept and development status are described.

Zych, A.↗
NASA NTRS2005

N-Type delta Doping of High-Purity Silicon Imaging Arrays

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.

Blacksberg, Jordana↗
DOE OSTI2022

Temperature Mapping of Stacked Silicon Dies from X-Ray-Diffraction Intensities

Increasing power densities in integrated circuits have led to an increased prevalence of thermal hotspots in integrated circuits. Tracking these thermal hotspots is imperative to prevent circuit failures. In three- dimensional (3D) integrated circuits, conventional surface techniques like infrared thermometry are unable to measure the 3D temperature distribution, and optical and magnetic resonance techniques are difficult to apply due to the presence of metals and large current densities. X-rays offer a high penetration depth and can be used to probe 3D structures. We report a method utilizing the temperature dependence of x-ray-diffraction intensity via the Debye-Waller factor to simultaneously map the temperature of individual silicon dies in a stack. Here, utilizing beamline 1-ID-E at the Advanced Photon Source (Argonne), we demonstrate, for each individual silicon die, a temperature resolution of 3 K, a spatial resolution of 100 × 400 μm 2 , and a temporal resolution of 20 s. Utilizing a sufficiently high-intensity laboratory source, e.g., from a liquid-anode source, this method can be scaled down to laboratories for noninvasive temperature mapping of 3D integrated circuits.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
NASA NTRS1972

The response of a 300 micron silicon detector to monoenergetic neutrons determined by the use of the Monte Carlo technique

The response of a 300 micron thick silicon detector to an incident monoenergetic neutron beam is evaluated by the Monte Carlo method for the cases of both a shielded and a bare detector. The result of Monte Carlo calculation, using elastic, inelastic, and absorption reactions indicates that the response of the silicon detector to neutrons is basically due to the elastic scattering. In addition, the gamma rays generated in the shield of the detector will result in a response which is 3 or 4 orders of magnitude smaller than response to incident photons. The response of a bare silicon detector is calculated for neutron energies up to 6 MeV and bias energies from 50 to 250 KeV. It is found that the maximum response for a 300 micron thick silicon detector is less than .004 c/n within this selected neutron and bias energy range. When the pulse height defect is introduced in the calculation the results at low energy neutrons were reduced.

Tahezadeh, M.↗
DOE OSTI2023

Large active-area superconducting microwire detector array with single-photon sensitivity in the near-infrared

Superconducting nanowire single photon detectors (SNSPDs) are the highest-performing technology for time-resolved single-photon counting from the UV to the near-infrared. The recent discovery of single-photon sensitivity in micrometer-scale superconducting wires is a promising pathway to explore for large active area devices with application to dark matter searches and fundamental physics experiments. We present 8-pixel $1 mm^2$ superconducting microwire single photon detectors (SMSPDs) with $1\,\mathrm{\mu m}$-wide wires fabricated from WSi and MoSi films of various stoichiometries using electron-beam and optical lithography. Devices made from all materials and fabrication techniques show saturated internal detection efficiency at 1064 nm in at least one pixel, and the best performing device made from silicon-rich WSi shows single-photon sensitivity in all 8 pixels and saturated internal detection efficiency in 6/8 pixels. This detector is the largest reported active-area SMSPD or SNSPD with near-IR sensitivity published to date, and the first report of an SMSPD array. By further optimizing the photolithography techniques presented in this work, a viable pathway exists to realize larger devices with $cm^2$-scale active area and beyond.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

SENSEI at SNOLAB: Single-Electron Event Rate and Implications for Dark Matter

We present results from data acquired by the SENSEI experiment at SNOLAB after a major upgrade in May 2023, which includes deploying 16 new sensors and replacing the copper trays that house the CCDs with a new light-tight design. We observe a single-electron event rate of (1.39±0.11)×10^{-5} e^{-}/pix/day, corresponding to (39.8±3.1) e^{-}/gram/day. This is an order-of-magnitude improvement compared to the previous lowest single-electron rate in a silicon detector and the lowest for any photon detector in the wavelength range between near-infrared and ultraviolet. We use these data to obtain a 90% confidence level upper bound of 1.53×10^{-5} e^{-}/pix/day and to set constraints on sub-GeV dark matter candidates that produce single-electron events. We hypothesize that the data taken at SNOLAB in the previous run, with an older tray design for the sensors, contained a larger rate of single-electron events due to light leaks. We test this hypothesis using data from the SENSEI detector located in the MINOS cavern at Fermilab.

dark matter↗
NASA NTRSDate not supplied

Photonic Source for Binary Source Simulations

More than half of the sun-like stars are in binary systems or have companions that hinder the search for planets around them using traditional technologies. There are only 69 FGK dwarfs within ten pc that can harbor true earth analogs. Direct imaging can detect and study the habitability of those targets measuring the chemical composition of the atmosphere, and astrometry can measure the planet's mass. We use Multi-Star Wavefront Control (MSWC), a technique that removes stellar leakage from both stellar components to enable direct imaging of binary systems. Currently, there is a technology demonstration experiment of MSWC for the Roman coronagraph instrument at the High Contrast Imaging Testbeds operated at JPL. One of the challenges for this experiment is to produce a binary source where both stars are incoherent with each other at close physical separation. On the other hand, to measure masses, it is possible to obtain relative astrometry measurements between the binary. The TOLIMAN concept proposes to use a diffractive pupil to calibrate the distortion and detector effects to reach 1uas astrometric accuracy. JPL currently has a laboratory to demonstrate this technology, which faces the same challenge as the MSWC project of producing two incoherent nearby sources. We developed Photonic Chips with multiple waveguides in Silicon Nitride for both projects to create incoherent single sources as close as 15um. In this paper, we present the concept application, the chips design, and the first results.

photonic chips↗
NASA NTRS1998

Studies of Avalanche Photodiodes (APDS) as Readout Devices for Scintillating Fibers for High Energy Gamma-Ray Astronomy Telescopes

New gamma ray and charged particle telescope designs based on scintillating fiber arrays could provide low cost, high resolution, lightweight, very large area and multi radiation length instrumentation for planned NASA space exploration. The scintillating fibers low visible light output requires readout sensors with single photon detection sensitivity and low noise. The sensitivity of silicon Avalanche Photodiodes (APDS) matches well the spectral output of the scintillating fibers. Moreover, APDs have demonstrated single photon capability. The global aim of our work is to make available to NASA a novel optical detector concept to be used as scintillating fiber readouts and meeting the requirements of the new generations of space-borne gamma ray telescopes. We proposed to evaluate the feasibility of using RMD's small area APDs ((mu)APD) as scintillating fiber readouts and to study possible alternative (mu)APD array configurations for space borne readout scintillating fiber systems, requiring several hundred thousand to one million channels. The evaluation has been conducted in accordance with the task description and technical specifications detailed in the NASA solicitation "Studies of Avalanche Photodiodes (APD as readout devices for scintillating fibers for High Energy Gamma-Ray Astronomy Telescopes" (#8-W-7-ES-13672NAIS) posted on October 23, 1997. The feasibility study we propose builds on recent developments of silicon APD arrays and light concentrators advances at RMD, Inc. and on more than 5 years of expertise in scintillating fiber detectors. In a previous program we carried out the initial research to develop a high resolution, small pixel, solid-state, silicon APD array which exhibited very high sensitivity in the UV-VIS spectrum. This (mu)APD array is operated in Geiger mode and results in high gain (greater than 10(exp 8)), extremely low noise, single photon detection capability, low quiescent power (less than 10 (mu)W/pixel for 30 micrometers sensitive area diameter) and output in the 1-5 volt range. If successful, this feasibility study will make possible the development of a scintillating fiber detector with unsurpassed sensitivity, extremely low power usage, a crucial factor of merit for space based sensors and telescopes.

Vasile, Stefan↗
NASA NTRS2016

Novel Photon-Counting Detectors for Free-Space Communication

We present performance data for novel photon counting detectors for free space optical communication. NASA GSFC is testing the performance of three novel photon counting detectors 1) a 2x8 mercury cadmium telluride avalanche array made by DRS Inc. 2) a commercial 2880 silicon avalanche photodiode array and 3) a prototype resonant cavity silicon avalanche photodiode array. We will present and compare dark count, photon detection efficiency, wavelength response and communication performance data for these detectors. We discuss system wavelength trades and architectures for optimizing overall communication link sensitivity, data rate and cost performance. The HgCdTe APD array has photon detection efficiencies of greater than 50 were routinely demonstrated across 5 arrays, with one array reaching a maximum PDE of 70. High resolution pixel-surface spot scans were performed and the junction diameters of the diodes were measured. The junction diameter was decreased from 31 m to 25 m resulting in a 2x increase in e-APD gain from 470 on the 2010 array to 1100 on the array delivered to NASA GSFC. Mean single photon SNRs of over 12 were demonstrated at excess noise factors of 1.2-1.3.The commercial silicon APD array has a fast output with rise times of 300ps and pulse widths of 600ps. Received and filtered signals from the entire array are multiplexed onto this single fast output. The prototype resonant cavity silicon APD array is being developed for use at 1 micron wavelength.

Photons↗
NASA NTRS2007

Compact Packaging of Photonic Millimeter-Wave Receiver

A carrier structure made from a single silicon substrate is the basis of a compact, lightweight, relatively inexpensive package that holds the main optical/electronic coupling components of a photonic millimeter-wave receiver based on a lithium niobate resonator disk. The design of the package is simple and provides for precise relative placement of optical components, eliminating the need for complex, bulky positioning mechanisms like those commonly used to align optical components to optimize focus and coupling. Although a prototype of the package was fabricated as a discrete unit, the design is amenable to integration of the package into a larger photonic and/or electronic receiver system. The components (see figure) include a lithium niobate optical resonator disk of 5-mm diameter and .200- m thickness, positioned adjacent to a millimeter- wave resonator electrode. Other components include input and output coupling prisms and input and output optical fibers tipped with ball lenses for focusing and collimation, respectively. Laser light is introduced via the input optical fiber and focused into the input coupling prism. The input coupling prism is positioned near (but not in contact with) the resonator disk so that by means of evanescent-wave coupling, the input laser light in the prism gives rise to laser light propagating circumferentially in guided modes in the resonator disk. Similarly, a portion of the circumferentially propagating optical power is extracted from the disk by evanescent-wave coupling from the disk to the output coupling prism, from whence the light passes through the collimating ball lens into the output optical fiber. The lens-tipped optical fibers must be positioned at a specified focal distance from the prisms. The optical fibers and the prisms must be correctly positioned relative to the resonator disk and must be oriented to obtain the angle of incidence (55 in the prototype) required for evanescent-wave coupling of light into and out of the desired guided modes in the resonator disk. To satisfy all these requirements, precise alignment features are formed in the silicon substrate by use of a conventional wet-etching process. These features include a 5-mm-diameter, 50- m-deep cavity that holds the disk; two trapezoidal-cross-section recesses for the prisms; and two grooves that hold the optical fibers at the correct positions and angles relative to the prisms and disk. The fiber grooves contain abrupt tapers, near the prisms, that serve as hard stops for positioning the lenses at the focal distance from the prisms. There are also two grooves for prismadjusting rods. The design provides a little slack in the prism recesses for adjusting the positions of the prisms by means of these rods to optimize the optical coupling.

Nguyen, Hung↗
DOE OSTI2024

Intricate short-range order in GeSn alloys revealed by atomistic simulations with highly accurate and efficient machine-learning potentials

GeSn alloys hold promise for silicon-compatible integrated applications in electronics, photonics, and topological quantum devices. However, understanding their intricate structures using density functional theory (DFT) calculations is hindered by spatiotemporal constraints. To overcome this limitation, we develop highly accurate and efficient machine-learning interatomic potentials based on a neuroevolution potential approach with farthest point sampling on a comprehensive DFT data set. The application of the developed machine-learning potential in large-scale atomistic simulations bridges the spatiotemporal gap between modeling and advanced characterizations, and facilitates the discovery of structural intricacies in GeSn alloys. Through extensive statistical sampling, we identify a type of short-range order (SRO) that is distinguished by both its structural signature and electronic band gap from the SRO structure previously predicted. Modeling based on a large simulation cell reveals the coexistence of nano SRO domains with various degrees of ordering, demonstrating a complex spatial heterogeneity of SRO structure. Finally, our study not only reinforces the significance of fine-level structural information in alloys, but it also constitutes an effective framework for exploring SRO in a broad range of complex alloys based on highly accurate and effective machine-learning potentials.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Characterization of suspended membrane waveguides towards a photonic atom trap integrated platform

We demonstrate an optical waveguide device, capable of supporting the high, in-vacuum, optical power necessary for trapping a single atom or a cold atom ensemble with evanescent fields. Our photonic integrated platform, with suspended membrane waveguides, successfully manages optical powers of 6 mW (500 μ m span) to nearly 30 mW (125 μ m span) over an un-tethered waveguide span. This platform is compatible with laser cooling and magneto-optical traps (MOTs) in the vicinity of the suspended waveguide, called the membrane MOT and the needle MOT, a key ingredient for efficient trap loading. We evaluate two novel designs that explore critical thermal management features that enable this large power handling. This work represents a significant step toward an integrated platform for coupling neutral atom quantum systems to photonic and electronic integrated circuits on silicon.

36 MATERIALS SCIENCE↗