Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Semiconductor Detector”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS2013

Future Development Trajectories for Imaging X-rays Spectrometers Based on Microcalorimeters

Future development trajectories for imaging x-ray spectrometers based on microcalorimeters. Since their invention 30 years ago, the capability of X-ray microcalorimeters has increased steadily, with continual improvements in energy resolution, speed, and array size. Arrays of up to 1024 pixels have been produced, and resolution better than 1 eV at 1.5 keV has been achieved. These detectors can be optimized for the highest priority science, such as designing for the highest resolving power at low energies at the expense of dynamic range, or the greatest focal-plane coverage at the expense of speed. Three types of X-ray microcalorimeters presently dominate the field, each characterized by the thermometer technology. The first two types use temperature-sensitive resistors: semiconductors in the metal-insulator transition and superconductors operated in the superconducting-normal transition. The third type uses a magnetically coupled thermometer, and is at an earlier stage of development than the other two. The Soft X-ray Spectrometer (SXS) on Astro-H, expected to launch in 2015, will use an array of silicon thermistors with HgTe X-ray absorbers that will operate at 50 mK. Both the semiconductor and superconductor calorimeters have been implemented in small arrays. Kilopixel arrays of the superconducting calorimeters are being produced, and much larger arrays may require the non-dissipative advantage of magnetically coupled thermometers. I will project the development trajectories of these detectors and their read-out technologies and assess what their capabilities and limitations will be 10 - 20 years from now.

Kilbourne, Caroline A.↗
NASA NTRS1988

Development of a unit cell for a Ge:Ga detector array

Two modules of gallium-doped germanium (Ge:Ga) infrared detectors with integrated multiplexing readouts and supporting drive electronics were designed and tested. This development investigated the feasibility of producing two-dimensional Ge:Ga arrays by stacking linear modules in a housing capable of providing uniaxial stress for enhanced long-wavelength response. Each module includes 8 detectors (1x1x2 mm) mounted to a sapphire board. The element spacing is 12 microns. The back faces of the detector elements are beveled with an 18 deg angle, which was proved to significantly enhance optical absorption. Each module includes a different silicon metal-oxide semiconductor field effect transistor (MOSFET) readout. The first circuit was built from discrete MOSFET components; the second incorporated devices taken from low-temperature integrated circuit multiplexers. The latter circuit exhibited much lower stray capacitance and improved stability. Using these switched-FET circuits, it was demonstrated that burst readout, with multiplexer active only during the readout period, could successfully be implemented at approximately 3.5 K.

Source record↗
NASA NTRS1994

Instrumentation for X-ray Astronomy

Less than five decades ago, the first X-ray observations of the sky were made using simple devices such as film and geiger counters with crude collimators. These instruments were carried aloft by sounding rockets and made observations lasting only a few minutes at most. Today, orbiting observatories, utilizing high-resolution charged coupled devices (CCD's) at the focus of arc sec optics, have lifetimes measured in years. To maintain the pace of discovery in X-ray astronomy, detectors must continue to evolve into devices of ever increasing sensitivity and sophistication. Further progress depends upon a host of technologies: grazing incidence optics, proportional counters, semiconductors, calorimeters, etc. In this article we present a brief qualitative overview of these technologies and of the principles behind them, as well as some examples of how they are employed in scientific missions for X-ray observations at energies up to 100 keV.

Ramsey, Brian D.↗
NASA NTRS1993

New technologies for UV detectors

Several technologies are currently being developed, leading to substantial improvements in the performance of UV detectors or significant reductions in power or weight. Four technologies discussed are (1) thin-film coatings to enhance the UV sensitivity of CCD's, (2) highly innovative magnet assemblies that dramatically reduce weight and result in virtually no external flux, (3) new techniques for curving microchannel plates (MCP's) so that single plates can be used to prevent ion feedback and present highly localized charge clouds to an anode structure, and (4) high-performance alternatives to glass-based MCP's. In item (2), for example, very robust magnets are made out of rare earth materials such as samarium cobalt, and cladding magnets are employed to prevent flux from escaping from the detector into the external environment. These new ultralight magnet assemblies are able to create strong, exceptionally uniform magnetic fields for image intensification and focusing of photoelectrons. The principle advantage of such detectors is the quantum efficiencies of 70-80 percent obtained throughout ultraviolet wavelengths (900-2000 A), the highest of any device. Despite the improvements achieved under item (3), high-performance alternatives to conventional glass-based MCP's potentially offer three distinct new advantages that include (1) a 30-100-fold improvement in dynamic range resulting in correspondingly higher signal-to-noise ratios, (2) the use of pure dielectric and semiconductor materials that will not outgas contaminants that eventually destroy photocathodes, and (3) channels that have constant spacing providing long-ranged order since the plates are made using photolithography techniques from the semiconductor industry. The manufacturers of these advanced-technology MCP's, however, are a couple of years away from actually producing a functioning image intensifier. In contrast to the use of CCD's for optical, ground based observations, there is no single detector technology in the ultraviolet that dominates or is as universally suitable for all applications. Thus, several technological problems, recent advances, and the impact that these new enabling technologies represent for UV applications are addressed.

Joseph, C. L.↗
NASA NTRS1989

Narrow bandgap semiconducting silicides: Intrinsic infrared detectors on a silicon chip

Polycrystalline thin films of CrSi2, LaSi2, and ReSi2 were grown on silicon substrates. Normal incidence optical transmittance and reflectance measurements were made as a function of wavelength. It was demonstrated that LaSi2 is a metallic conductor, but that CrSi2 and ReSi2 are, in fact, narrow bandgap semiconductors. For CrSi2, the complex index of refraction was determined by computer analysis of the optical data. From the imaginary part, the optical absorption coefficient was determined as a function of photon energy. It was shown that CrSi2 possesses an indirect forbidden energy gap of slightly less than 0.31 eV, and yet it is a very strong absorber of light above the absorption edge. On the other hand, the ReSi2 films exhibit an absorption edge in the vicinity of 0.2 eV. Measurements of the thermal activation energy of resistivity for ReSi2 indicate a bandgap of 0.18 eV. It is concluded that the semiconducting silicides merit further investigation for development as new silicon-compatible infrared detector materials.

Mahan, John E.↗
NASA NTRS2021

T2SL Focal Planes for Compact Remote Sensing Instruments

In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II superlattice (T2SL) based infrared photodetectors using the barrier infrared detector (BIRD) architecture. The high operating temperature (HOT) BIRD focal plane arrays (FPAs) offer the same high performance, uniformity, operability, manufacturability, and affordability advantages as InSb. However, mid-wavelength infrared (MWIR) HOT-BIRD FPAs can operate at significantly higher temperatures (>150K) than InSb FPAs (typically 80K). Moreover, while InSb has a fixed cutoff wavelength (~5.4 µm), the HOT-BIRD offers a continuous adjustable cutoff wavelength, ranging from ~4 µm to >15 µm, and is therefore also suitable for long wavelength infrared (LWIR) as well. The LWIR detectors based on the BIRD architecture has also demonstrated significant operating temperature advantages over those based on traditional p-n junction designs. Two 6U SmalSat missions CIRAS (Cubesat Infrared Atmospheric Sounder) and HyTI (Hyperspectral Thermal Imager) are based on JPL’s T2SL BIRD focal plane arrays (FPAs). Based on III-V compound semiconductors, the BIRD FPAs offer a breakthrough solution for the realization of low cost (high yield), high-performance FPAs with excellent uniformity and pixel-to-pixel operability. We have also exploring the possibilities of implementing either metasurface resonator cavity or metasurface based flatlens to improve the signal-to-noise ratio of the detectors.

Ghuman, Parminder↗
NASA NTRS2021

High operating temperature T2SL digital focal plane arrays for earth remote sensing instruments

In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II superlattice (T2SL) based infrared photodetectors using the barrier infrared detector (BIRD) architecture. The high operating temperature (HOT) BIRD focal plane arrays (FPAs) offer the same high performance, uniformity, operability, manufacturability, and affordability advantages as InSb. However, mid-wavelength infrared (MWIR) HOT-BIRD FPAs can operate at significantly higher temperatures (>150K) than InSb FPAs (typically 80K). Moreover, while InSb has a fixed cutoff wavelength (~5.4 µm), the HOT-BIRD offers a continuous adjustable cutoff wavelength, ranging from ~4 µm to >15 µm, and is therefore also suitable for long wavelength infrared (LWIR) as well. The LWIR detectors based on the BIRD architecture has also demonstrated significant operating temperature advantages over those based on traditional p-n junction designs. Two 6U SmalSat missions CIRAS (Cubesat Infrared Atmospheric Sounder) and HyTI (Hyperspectral Thermal Imager) are based on JPL’s T2SL BIRD focal plane arrays (FPAs). Based on III-V compound semiconductors, the BIRD FPAs offer a breakthrough solution for the realization of low cost (high yield), high-performance FPAs with excellent uniformity and pixel-to-pixel operability. We have also exploring the possibilities of integrating either metasurface resonator cavity or metasurface based flatlens with individual pixels to improve the signal-to-noise ratio of the detectors. Furthermore, we will discuss the advantages of the utilization of all digital read out integrated circuits with HOT-BIRDs.

Ghuman, and Parminder↗
NASA NTRS2021

Mid-Wavelength and Long-Wavelength Infrared Focal Planes for SmallSat Applications

In this presentation, we will report our recent efforts in achieving high performance in Antimonides type-II superlattice (T2SL) based infrared photodetectors using the barrier infrared detector (BIRD) architecture. The high operating temperature (HOT) BIRD focal plane arrays (FPAs) offer the same high performance, uniformity, operability, manufacturability, and affordability advantages as InSb. However, mid-wavelength infrared (MWIR) HOT-BIRD FPAs can operate at significantly higher temperatures (>150K) than InSb FPAs (typically 80K). Moreover, while InSb has a fixed cutoff wavelength (~5.4 µm), the HOT-BIRD offers a continuous adjustable cutoff wavelength, ranging from ~4 µm to >15 µm, and is therefore also suitable for long wavelength infrared (LWIR) as well. The LWIR detectors based on the BIRD architecture has also demonstrated significant operating temperature advantages over those based on traditional p-n junction designs. Two 6U SmalSat missions CIRAS (Cubesat Infrared Atmospheric Sounder) and HyTI (Hyperspectral Thermal Imager) are based on JPL’s T2SL BIRD focal plane arrays (FPAs). Based on III-V compound semiconductors, the BIRD FPAs offer a breakthrough solution for the realization of low cost (high yield), high-performance FPAs with excellent uniformity and pixel-to-pixel operability. We have also exploring the possibilities of integrating either metasurface resonator cavity or metasurface based flatlens with individual pixels to improve the signal-to-noise ratio of the detectors. Furthermore, we will discuss the advantages of the utilization of all digital read out integrated circuits with HOT-BIRDs.

Ghuman, Parminder↗
NASA NTRS1970

Code CUGEL: A code to unfold Ge(Li) spectrometer polyenergetic gamma photon experimental distributions

A FORTRAN code was developed for the Univac 1108 digital computer to unfold lithium-drifted germanium semiconductor spectrometers, polyenergetic gamma photon experimental distributions. It was designed to analyze the combination continuous and monoenergetic gamma radiation field of radioisotope volumetric sources. The code generates the detector system response matrix function and applies it to monoenergetic spectral components discretely and to the continuum iteratively. It corrects for system drift, source decay, background, and detection efficiency. Results are presented in digital form for differential and integrated photon number and energy distributions, and for exposure dose.

Steyn, J. J.↗
NASA NTRS1973

Neutral beam dose and sputtering characteristics in an ion implantation system

A technique and instrument design for calorimetric detection of the neutral atom content of a 60 keV argon ion beam. A beam sampling method is used to measure local heat flux to a small platinum wire at steady state; integration of power density profiles leads to a determination of equivalent neutral beam current. The fast neutral production occurs as a result of charge transfer processes in the region of the beam system between analyzing magnet and beam stop where the pressure remains less than .00001 torr. A description of the neutral beam detector is given in section along with a presentation of results. An elementary analysis of sputter material transport from target to substrate was performed; the analysis relates to semiconductor sputtering.

Roberts, A. S., Jr.↗
NASA NTRS2009

Zinc Alloys for the Fabrication of Semiconductor Devices

ZnBeO and ZnCdSeO alloys have been disclosed as materials for the improvement in performance, function, and capability of semiconductor devices. The alloys can be used alone or in combination to form active photonic layers that can emit over a range of wavelength values. Materials with both larger and smaller band gaps would allow for the fabrication of semiconductor heterostructures that have increased function in the ultraviolet (UV) region of the spectrum. ZnO is a wide band-gap material possessing good radiation-resistance properties. It is desirable to modify the energy band gap of ZnO to smaller values than that for ZnO and to larger values than that for ZnO for use in semiconductor devices. A material with band gap energy larger than that of ZnO would allow for the emission at shorter wavelengths for LED (light emitting diode) and LD (laser diode) devices, while a material with band gap energy smaller than that of ZnO would allow for emission at longer wavelengths for LED and LD devices. The amount of Be in the ZnBeO alloy system can be varied to increase the energy bandgap of ZnO to values larger than that of ZnO. The amount of Cd and Se in the ZnCdSeO alloy system can be varied to decrease the energy band gap of ZnO to values smaller than that of ZnO. Each alloy formed can be undoped or can be p-type doped using selected dopant elements, or can be n-type doped using selected dopant elements. The layers and structures formed with both the ZnBeO and ZnCdSeO semiconductor alloys - including undoped, p-type-doped, and n-type-doped types - can be used for fabricating photonic and electronic semiconductor devices for use in photonic and electronic applications. These devices can be used in LEDs, LDs, FETs (field effect transistors), PN junctions, PIN junctions, Schottky barrier diodes, UV detectors and transmitters, and transistors and transparent transistors. They also can be used in applications for lightemitting display, backlighting for displays, UV and visible transmitters and detectors, high-frequency radar, biomedical imaging, chemical compound identification, molecular identification and structure, gas sensors, imaging systems, and for the fundamental studies of atoms, molecules, gases, vapors, and solids.

Ryu, Yungryel↗
NASA NTRS2013

Complementary barrier infrared detector (CBIRD)

An infrared detector having a hole barrier region adjacent to one side of an absorber region, an electron barrier region adjacent to the other side of the absorber region, and a semiconductor adjacent to the electron barrier.

Ting, David Z.↗
NASA NTRS1988

Optical communication with semiconductor laser diodes

Slot timing recovery in a direct detection optical PPM communication system can be achieved by processing the photodetector waveform with a nonlinear device whose output forms the input to a phase lock group. The choice of a simple transition detector as the nonlinearity is shown to give satisfactory synchronization performance. The rms phase error of the recovered slot clock and the effect of slot timing jitter on the bit error probability were directly measured. The experimental system consisted of an AlGaAs laser diode (lambda = 834 nm) and a silicon avalanche photodiode (APD) photodetector and used Q=4 PPM signaling operated at a source data rate of 25 megabits/second. The mathematical model developed to characterize system performance is shown to be in good agreement with actual performance measurements. The use of the recovered slot clock in the receiver resulted in no degradation in receiver sensitivity compared to a system with perfect slot timing. The system achieved a bit error probability of 10 to the minus 6 power at received signal energies corresponding to an average of less than 60 detected photons per information bit.

Davidson, F.↗
NASA NTRSDate not supplied

Developing the Future of Gamma-ray Astrophysics with Monolithic Silicon Pixels

This paper explores the potential of AstroPix, a project to develop Complementary Metal Oxide Semiconductor (CMOS) pixels for the next generation of space-based high-energy astrophysics experiments. Multimessenger astrophysics is a rapidly developing field whose upcoming missions need support from new detector technology such as AstroPix. ATLASPix, a monolithic silicon detector optimized for the ATLAS particle detector at CERN, is the beginning of the larger AstroPix project. Energy resolution is a driving parameter in the reconstruction of gamma-ray events, and therefore the characterization of ATLASPix energy resolution is the focus of this paper. The intrinsic energy resolution of the detector exceeded our baseline requirements of 10% at 60 keV. The digital output of ATLASPix results in energy resolutions insufficient to advance gamma-ray astronomy. However, the results from the intrinsic energy resolution indicate the digital capability of the detector can be redesigned, and the next generation of pixels for the larger AstroPix project have already been constructed. Iterations of AstroPix-type pixels are an exciting new technology candidate to support new space-based missions.

Isabella Brewer↗
NASA NTRS1986

Field Funneling and Range Straggling in Silicon Detectors

Magnitudes of field funneling and range straggling determined in silicon-surface-barrier (Schottky-barrier) charged-particle detectors (SSBD's) through meaurement of charges collected from alpha-particle tracks. Method used extended to straightforward measurement of charge collection from heavy-ion tracks in these and other semiconductor devices. Such measurements used to assess single-event upsets in integratedcircuit chips, with view toward making them resistant to radiation. Field funneling and range straggling measured with electronic system in which charge collected from individual ions measured and recorded by multichannel analyzer.

Zoutendyk, J. A.↗
NASA NTRS2014

Growth of CdZnTe Crystals for Radiation Detector Applications by Directional Solidification

Advances in Cadmium Zinc Telluride (Cd(sub 1-x)Zn(sub x)Te) growth techniques are needed for the production of large-scale arrays of gamma and x-ray astronomy. The research objective is to develop crystal growth recipes and techniques to obtain large, high quality CdZnTe single crystal with reduced defects, such as charge trapping, twinning, and tellurium precipitates, which degrade the performance of CdZnTe and, at the same time, to increase the yield of usable material from the CdZnTe ingot. A low gravity material experiment, "Crystal Growth of Ternary Compound Semiconductors in Low Gravity Environment", will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). One section of the flight experiment is the melt growth of CdZnTe ternary compounds. This talk will focus on the ground-based studies on the growth of Cd(sub 0.80)Zn(sub 0.20)Te crystals for radiation detector applications by directional solidification. In this investigation, we have improved the properties that are most critical for the detector applications (electrical properties and crystalline quality): a) Electrical resistivity: use high purity starting materials (with reproducible impurity levels) and controlled Cd over pressure during growth to reproducibly balance the impurity levels and Cd vacancy concentration b) Crystalline quality: use ultra-clean growth ampoule (no wetting after growth), optimized thermal profile and ampoule design, as well as a technique for supercool reduction to growth large single crystal with high crystalline quality

Su, Ching-Hua↗
NASA NTRS1972

Methods of measurement for semiconductor materials, process control, and devices

Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Topics investigated include: measurements of transistor delay time; application of the infrared response technique to the study of radiation-damaged, lithium-drifted silicon detectors; and identification of a condition that minimizes wire flexure and reduces the failure rate of wire bonds in transistors and integrated circuits under slow thermal cycling conditions. Supplementary data concerning staff, standards committee activities, technical services, and publications are included as appendixes.

Bullis, W. M.↗
NASA NTRS1996

Electro-optic Lightning Detector

The design, alignment, calibration, and field deployment of a solid-state lightning detector is described. The primary sensing component of the detector is a potassium dihydrogen phosphate (KDP) electro-optic crystal that is attached in series to a flat plate aluminum antenna; the antenna is exposed to the ambient thundercloud electric field. A semiconductor laser diode (lambda = 685 nm), polarizing optics, and the crystal are arranged in a Pockels cell configuration. Lightning-caused electric field changes are related to small changes in the transmission of laser light through the optical cell. Several hundred lightning electric field change excursions were recorded during five thunderstorms that occurred in the summer of 1998 at the NASA Marshall Space Flight Center (MSFC) in northern Alabama.

Koshak, William J.↗