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At least 235 records · Page 13

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DOE OSTI2018

TiO2 nanotubes grown on Ti substrates with different microstructure

Highlights: • TiO{sub 2} nanotube layers were grown on four different Ti substrates by anodization. • Ti substrates with completely different microstructures were used. • The grain size of the substrates ranged from nanocrystalline to single-crystalline. • Differences between the nanotubes grown on these substrates were evaluated. • Similar nanotube dimensions were received on all Ti substrates. - Abstract: Four Ti substrates with various microstructures were investigated for the anodic growth of TiO{sub 2} nanotube layers: nanocrystalline and single-crystalline ingots as well as microcrystalline thick Ti sheets and microcrystalline thin Ti foils. All substrates were anodized in a conventional ethylene glycol based electrolyte under identical conditions. The resulting TiO{sub 2} nanotube layers were compared in dimensions and the consumption of Ti required for their growth. Unexpectedly, the results showed that on all substrates nanotube layers with a similar thickness and nanotube diameter, as well as a similar degree of ordering and after annealing the same crystallographic orientation of anatase were received, regardless the microstructures. However, the nanotube layers grown on a Ti sheet revealed a slightly higher thickness compared to the other substrates which were assigned to slower field-assisted dissolution rates due to different impurities found in this substrate compared to other ones.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2014

Nanocrystalline SiC formed by annealing of a-SiC:H on Si substrates: A study of dopant interdiffusion

Nanocrystalline silicon carbide (nc-SiC) is an interesting material for electronics applications, both in its own right and as a host matrix for silicon quantum dots. When synthesized by annealing of a-SiC:H on Si substrates, interdiffusion of dopants occurs if either the a-SiC:H or the Si substrate is doped. Annealing a-SiC:H on highly boron-doped substrates at 1100 °C leads to a fairly homogeneous doping level of ≥4 × 10{sup 19} cm{sup −3} throughout the nc-SiC film. An unexpected anomaly in secondary ion mass spectroscopy quantification is observed and a method to circumvent it is shown. The nanostructure of the nc-SiC is only weakly affected as most of the diffusion occurs after the onset of crystallization. Annealing of doped a-SiC:H on Si substrates at 1100 °C leads to strong free carrier absorption at infrared wavelengths. This is demonstrated to originate from dopants that have diffused from the a-SiC:H to the Si substrate, and a method is developed to extract from it the doping profile in the Si substrate. The detection limit of this method is estimated to be ≤6 × 10{sup 13} cm{sup −2}. Doping levels of (0.5–3.5) × 10{sup 19} cm{sup −3} are induced at the Si substrate surface by both boron and phosphorus-doped a–SiC:H. When the Si substrate is doped opposite to the a-SiC:H p–n junctions are induced at a depth of 0.9–1.4 μm within the Si substrate for substrate resistivities of 1–10 Ω cm. Implications for different solar cell architectures are discussed. Dopant diffusion can be strongly reduced by lowering the annealing temperature to 1000 °C, albeit at the expense of reduced crystallinity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2023

Patterned OLEDs: effect of substrate corrugation pitch and height

Abstract An ongoing OLED challenge is cost-effective enhancement of light extraction, i.e., increasing the external quantum efficiency ( EQE ∼20% in conventional devices). OLEDs on corrugated substrates often show enhanced EQE s providing insight into light emission processes. In particular, patterned plastic substrates directly imprinted easily at room temperature and amenable to low-cost R2R production are ideal for studying/optimizing various structures, further elucidating the extraction process. We show new semi-quantitative data of the effect of the pitch ( a ) and height/depth ( h ) of plastic substrate patterns on the OLEDs’ stack and EQE , focusing on new designs, interestingly, some showing surprisingly enhanced EQE s that were neither reported nor discussed before. These includ e : ( i ) shallow ( h < 200 nm) convex polycarbonate with a ∼ 750 versus ∼400 nm, where the h gradually decreases as the OLED stack is built and ( ii ) concave PET/CAB with large a (∼2.8 and ∼7.8 μ m), where the EQE enhancement of conformal OLEDs may be due largely to scattering. EQE s of green, blue, and white phosphorescent OLEDs were measured. OLEDs on substrates with narrow a ∼ 400 nm and low h < 200 nm s h owed no enhancement, resembling flat devices. In contrast, OLEDs on substrates with comparable or smaller h , but larger a ∼ 750 nm show signific a nt EQE enhancement despite h reduction across the stack. Green OLEDs with a ∼ 750 nm and h ∼ 160 to ∼180 nm, showed EQE s ∼30%, reaching ∼58% with substrate mode extraction. Surprisingly, fully conformal OLEDs on a PET/CAB substrate with a ∼ 7.8 μ m showed blue a nd white EQE s reaching ∼33%, without substrate mode extraction. The enhancing patterns increase the OLEDs’ EQE by reducing surface plasmon excitation and internal waveguiding. The experimental results for OLEDs on substrates with a < 2 μ m are supported by scattering matrix simulations that assume conformal stacks, incorporating diffraction for internal losses reduction. EQE enhancement not predicted by simulations may be due additionally to scattering mostly for substrates with a signific a ntly larger than the emitting wavelength.

42 ENGINEERING↗

DOE OSTI2023

Deuterated water as a substrate-agnostic isotope tracer for investigating reversibility and thermodynamics of reactions in central carbon metabolism

Stable isotope tracers are a powerful tool for the quantitative analysis of microbial metabolism, enabling pathway elucidation, metabolic flux quantification, and assessment of reaction and pathway thermodynamics. 13 C and 2 H metabolic flux analysis commonly relies on isotopically labeled carbon substrates, such as glucose. However, the use of 2 H-labeled nutrient substrates faces limitations due to their high cost and limited availability in comparison to 13 C-tracers. Furthermore, isotope tracer studies in industrially relevant bacteria that metabolize complex substrates such as cellulose, hemicellulose, or lignocellulosic biomass, are challenging given the difficulty in obtaining these as isotopically labeled substrates. In this study, we examine the potential of deuterated water ( 2 H 2 O) as an affordable, substrate-neutral isotope tracer for studying central carbon metabolism. We apply 2 H 2 O labeling to investigate the reversibility of glycolytic reactions across three industrially relevant bacterial species -C. thermocellum, Z. mobilis, and E. coli-harboring distinct glycolytic pathways with unique thermodynamics. We demonstrate that 2 H 2 O labeling recapitulates previous reversibility and thermodynamic findings obtained with established 13 C and 2 H labeled nutrient substrates. Furthermore, we exemplify the utility of this 2 H 2 O labeling approach by applying it to high-substrate C. thermocellum fermentations -a setting in which the use of conventional tracers is impractical-thereby identifying the glycolytic enzyme phosphofructokinase as a major bottleneck during high-substrate fermentations and unveiling critical insights that will steer future engineering efforts to enhance ethanol production in this cellulolytic organism. This study demonstrates the utility of deuterated water as a substrate-agnostic isotope tracer for examining flux and reversibility of central carbon metabolic reactions, which yields biological insights comparable to those obtained using costly 2 H-labeled nutrient substrates.

09 BIOMASS FUELS↗

DOE OSTI2023

Power Electronic Substrates for Space Restricted Application

High-power modules use substrates to house the semiconductor device and for electrical insulation. These substrates are constructed with thermally conductive dielectric material sandwiched between two metals to extract heat from semiconductor chips. Thus, the required cooling performance of a power module is linked to the substrate’s thermal performance and can vary based on the substrate technologies. In this study, four substrate technologies were evaluated for space-restricted applications: direct-bonded copper, an insulated metal substrate, a thermally annealed pyrolytic graphite–based insulated metal substrate, and direct-bonded aluminum, where the heat sink is directly attached without thermal interface materials. The finite element results suggest that the popular direct-bonded copper substrate has better thermal performance than the rest of the substrates for space-restricted applications. Furthermore, a modified direct-bonded copper is proposed to further improve thermal performance. The evaluation results show that the modified substrate can handle 30% more losses than its traditional counterpart.

Chowdhury, Shajjad↗

DOE OSTI2018

Modeling liquid organic thin films on substrates

We present the rationale, methods, and results of modeling of thin film organic liquids on various substrates. These liquids may coat surfaces (substrates) either as a result of their production, dispersal via aerosols or spills. Identification of unknown coated surfaces using either reflectance or emittance spectroscopy cannot be accomplished simply through reference to reflectance signature libraries since neither the thickness of the liquid layer nor the substrate type is known beforehand and both contribute to the signature. Liquid spectral libraries offer the complex index of refraction (n,k) as a function of wavelength which by itself is useful only for thick (bulk) liquid layers via computation of reflectance and transmittance coefficients using the Fresnel equations. Thin liquid layers both reflect and refract incident light in combination with reflectance from the substrate. We show modeling of various organic liquids on substrates using commercial thin film design and modeling software, as well as Monte Carlo ray tracing software to demonstrate the variety of potential signatures encountered that depend on the thickness of the liquid layer as well as the characteristics of the substrate (metal or dielectric). These substrates give rise to transflectance behavior, while many dielectric substrates have rich absorption features that provide complex signatures that combine attributes of both the liquid and the substrate. Knowledge of the complex index of refraction of both target liquids and substrates is essential in order to synthesize spectra necessary in the application of target identification algorithms.

complex index of refraction↗

NASA NTRS2009

Silicon Wafer-Scale Substrate for Microshutters and Detector Arrays

The silicon substrate carrier was created so that a large-area array (in this case 62,000+ elements of a microshutter array) and a variety of discrete passive and active devices could be mounted on a single board, similar to a printed circuit board. However, the density and number of interconnects far exceeds the capabilities of printed circuit board technology. To overcome this hurdle, a method was developed to fabricate this carrier out of silicon and implement silicon integrated circuit (IC) technology. This method achieves a large number of high-density metal interconnects; a 100-percent yield over a 6-in. (approximately equal to 15-cm) diameter wafer (one unit per wafer); a rigid, thermally compatible structure (all components and operating conditions) to cryogenic temperatures; re-workability and component replaceability, if required; and the ability to precisely cut large-area holes through the substrate. A method that would employ indium bump technology along with wafer-scale integration onto a silicon carrier was also developed. By establishing a silicon-based version of a printed circuit board, the objectives could be met with one solution. The silicon substrate would be 2 mm thick to survive the environmental loads of a launch. More than 2,300 metal traces and over 1,500 individual wire bonds are required. To mate the microshutter array to the silicon substrate, more than 10,000 indium bumps are required. A window was cut in the substrate to allow the light signal to pass through the substrate and reach the microshutter array. The substrate was also the receptacle for multiple unpackaged IC die wire-bonded directly to the substrate (thus conserving space over conventionally packaged die). Unique features of this technology include the implementation of a 2-mmthick silicon wafer to withstand extreme mechanical loads (from a rocket launch); integrated polysilicon resistor heaters directly on the substrate; the precise formation of an open aperture (approximately equal to 3x3cm) without any crack propagation; implementation of IR transmission blocking techniques; and compatibility with indium bump bonding. Although designed for the microshutter arrays for the NIRSpec instrument on the James Webb Space Telescope, these substrates can be linked to microshutter applications in the photomask generation and stepper equipment used to make ICs and microelectromechanical system (MEMS) devices.

Jhabvala, Murzy↗

DOE OSTI2024

Epitaxial Thin Film Growth on Recycled SrTiO 3 Substrates Toward Sustainable Processing of Complex Oxides

Complex oxide thin films cover a range of physical properties and multifunctionalities that are critical for logic, memory, and optical devices. Typically, the high‐quality epitaxial growth of these complex oxide thin films requires single crystalline oxide substrates such as SrTiO 3 (STO), MgO, LaAlO 3 , a‐Al 2 O 3, and many others. Recent successes in transferring these complex oxides as free‐standing films not only offer great opportunities in integrating complex oxides on other devices, but also present enormous opportunities in recycling the deposited substrates after transfer for cost‐effective and sustainable processing of complex oxide thin films. In this work, the surface modification effects introduced on the recycled STO are investigated, and their impacts on the microstructure and properties of subsequently grown epitaxial oxide thin films are assessed and compared with those grown on the pristine substrates. Detailed analyses using high‐resolution scanning transmission electron microscopy and geometric phase analysis demonstrate distinct strain states on the surfaces of the recycled STO versus the pristine substrates, suggesting a pre‐strain state in the recycled STO substrates due to the previous deposition layer. These findings offer opportunities in growing highly mismatched oxide films on the recycled STO substrates with enhanced physical properties. Specifically, yttrium iron garnet (Y 3 Fe 5 O 12 ) films grown on recycled STO present different ferromagnetic responses compared to that on the pristine substrates, underscoring the effects of surface modification. The study demonstrates the feasibility of reuse and redeposition using recycled substrates. Via careful handling and preparation, high‐quality epitaxial thin films can be grown on recycled substrates with comparable or even better structural and physical properties toward sustainable process of complex oxide devices.

pre-strained STO surfaces↗

DOE OSTI2025

Bacterial fitness for plant colonization is influenced by plant growth substrate

Despite advances in our understanding of bacterial plant colonization, the extent to which growth substrate influences the molecular mechanisms enabling bacteria to efficiently colonize plants remains poorly understood. To address this, we used randomly barcoded transposon mutagenesis sequencing (RB-TnSeq) in Paraburkholderia graminis OAS925, an efficient rhizosphere colonizer, and Brachypodium distachyon grown in six different substrates. Of the 382 rhizosphere colonization genes that we identified in OAS925, 348 genes (91.1%) are dependent on the growth substrate evaluated, and 34 genes (8.9%) are shared across all the substrates. Both the core and substrate-dependent colonization genes are from multiple functional categories, demonstrating the multifaceted and major impact that plant growth substrate has on bacterial colonization. The identified colonization genes and their varied importance across plant growth substrates could not be readily explained by differences in root exudate profiles, suggesting that the substrate environment itself plays an outsized role in the ability of a bacterium to colonize the rhizosphere. Our data confirm that bacterial fitness for plant colonization is strongly influenced by plant growth substrate type and highlights the importance of taking this parameter into consideration when engineering bacterial strains for improved host colonization.

Paraburkholderia↗

DOE OSTI2014

Mechanical and transparent conductive properties of ZnO and Ga-doped ZnO films sputtered using electron-cyclotron-resonance plasma on polyethylene naphtalate substrates

Transparent conductive ZnO and Ga-doped ZnO (GZO) films were deposited on polyethylene naphtalate (PEN) sheet substrates using electron cyclotron resonance plasma sputtering. Both ZnO and GZO films were highly adhesive to the PEN substrates without inserting an intermediate layer in the interface. When compared at the same thickness, the transparent conductive properties of GZO films on PEN substrates were only slightly inferior to those on glass substrates. However, the carrier concentration of ZnO films on PEN substrates was 1.5 times that of those on glass substrates, whereas their Hall mobility was only 60% at a thickness of 300 nm. The depth profile of elements measured by secondary ion mass spectroscopy revealed the diffusion of hydrocarbons out of the PEN substrate into the ZnO film. Hence, doped carbons may act as donors to enhance carrier concentration, and the intermixing of elements at the interface may deteriorate the crystallinity, resulting in the lower Hall mobility. When the ZnO films were thicker than 400 nm, cracks became prevalent because of the lattice mismatch strain between the film and the substrate, whereas GZO films were free of cracks. The authors investigated how rolling the films around a cylindrical pipe surface affected their conductive properties. Degraded conductivity occurred at a threshold pipe radius of 10 mm when tensile stress was applied to the film, but it occurred at a pipe radius of 5 mm when compressive stress was applied. These values are guidelines for bending actual devices fabricated on PEN substrates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2020

Graphene as reusable substrate for bialkali photocathodes

Bialkali photocathodes, such as cesium potassium antimonide (CsK 2 Sb), can generate a high-brightness electron beam using a high-power green laser. These photocathode materials have potential applications in advanced accelerators and electron microscopes. It is known that the quantum efficiency (QE) of these photocathodes is affected severely by their substrates; however, reusability of the substrates is not well known. Here, we use graphene, silicon (Si), and molybdenum (Mo) substrates to evaluate the effects of substrates on the QE of redeposited CsK 2 Sb photocathodes after thermal cleanings. We found the QE of CsK 2 Sb photocathodes redeposited on a graphene substrate after a thermal cleaning at 500 °C remained largely unchanged. On the other hand, the QE of redeposited photocathodes on Si and Mo substrates after thermal cleaning at the same temperature decreased drastically. We used X-ray photoelectron spectroscopy (XPS) to quantitatively evaluate the residues of photocathodes after thermal cleaning at 400 °C and 500 °C. We found that the Sb, K, and Cs are removed by thermal cleaning at 500 °C for the graphene substrate, but all or the majority of these elements remained on the Si and Mo substrates. The results were consistent with our density functional theory (DFT) calculations for the case of Si, which we investigated. Furthermore, our angle-resolved photoemission spectroscopy (ARPES) on graphene indicated that its intrinsic electronic structure is preserved after photocathode deposition and thermal cleaning at 500 °C. Hence, we attributed the difference in amount of photocathode residue to the unique dangling-bond- free surface of inert graphene. Our results provide a foundation for graphene-based reusable substrates for high-QE semiconductor photocathodes.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2022

Effect of substrate temperature on sputter-deposited boron carbide films

Sputter deposition of B4C films with tailored physical properties remains a challenge. Here, we systematically study how substrate temperature influences the properties of B4C films deposited by direct current magnetron sputtering onto planar substrates held at temperatures in the range of 100-510°C. Results show that all films are amorphous stoichiometric B4C, with low O content of ~1 at. %. Films deposited onto substrates at 100°C exhibit high compressive residual stress and decreased mechanical properties. Therefore, for elevated substrate temperatures in the range of 180-510°C, film mass density, surface roughness, Young’s modulus, and hardness are weakly dependent on substrate temperature. However, in this temperature range, an increase in substrate temperature leads to larger residual compressive stress accompanied by a corresponding reduction in the concentration of nanoscale inhomogeneities. At least for the landing atom ballistics conditions studied here, a substrate temperature range of ~185-250°C is optimum for growing films with near-zero intrinsic residual stress. The overall weak substrate temperature dependence of film properties revealed in this work is favorable for the development of a robust deposition process, particularly for the case of deposition onto non-planar substrates where temperature control is often challenging.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Orientational ordering, buckling, and dynamic transitions for vortices interacting with a periodic quasi-one-dimensional substrate

In this study, we examine the statics and dynamics of vortices in the presence of a periodic quasi-one-dimensional substrate, focusing on the limit where the vortex lattice constant is smaller than the substrate lattice period. As a function of the substrate strength and filling factor, within the pinned state, we observe a series of order-disorder transitions associated with buckling phenomena in which the number of vortex rows that fit between neighboring substrate maxima increases. These transitions coincide with steps in the depinning threshold, jumps in the density of topological defects, and changes in the structure factor. At the buckling transition, the vortices are disordered, while between the buckling transitions the vortices form a variety of crystalline and partially ordered states. In the weak substrate limit, the buckling transitions are absent and the vortices form an ordered hexagonal lattice that undergoes changes in its orientation with respect to the substrate as a function of vortex density. At intermediate substrate strength, certain ordered states appear that are correlated with peaks in the depinning force. Under an applied drive, the system exhibits a rich variety of distinct dynamical phases, including plastic flow, a density-modulated moving crystal, and moving floating solid phases. We also find a dynamic smectic-to-smectic transition in which the smectic ordering changes from being aligned with the substrate to being aligned with the external drive. The different dynamical phases can be characterized using velocity histograms and the structure factor. We discuss how these results are related to recent experiments on vortex ordering in thin films with periodic thickness modulations. In conclusion, our results should also be relevant for other types of systems such as ions, colloids, or Wigner crystals interacting with periodic quasi-one-dimensional substrates.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Stripe and bubble ratchets on asymmetric substrates

We show that various nonmonotonic ratchet effects can arise when mesophase pattern-forming systems, which exhibit anisotropic crystal, stripe, and bubble regimes, are coupled to one-dimensional asymmetric substrates under ac driving. The patterns emerge in the absence of a substrate when the ratio of attraction to repulsion is varied for particles with competing short-range attraction and long-range repulsion potentials. In the presence of the substrate, we find that the ratchet efficiency varies nonmonotonically with increasing attraction, depending upon how well the mesophase morphology matches the substrate spacing and periodicity. For strong repulsion, there is a weak but finite ratchet effect, while at intermediate attraction, there is a robust ratchet effect in which the system forms stripes aligned with the substrate symmetry direction. For strong attraction, large bubbles appear that have weak or no ratchet effects when the bubble width exceeds the substrate lattice spacing, causing the bubble to be only weakly coupled to the substrate. For very strong attraction, small bubbles form and undergo a strong ratchet effect with an efficiency that oscillates as a function of ac drive amplitude. Although the small bubble regime is a strongly correlated regime in which each bubble contains many particles, the system behaves as if it is in a single-particle regime since the bubble width is much smaller than the substrate lattice spacing. We map out the different rectification phases as a function of the pattern morphology, substrate strength, and ac drive amplitude. The pronounced ratchet effects that we observe in some regimes can be exploited for pattern sorting in hard and soft matter systems. Published by the American Physical Society 2024

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2018

III–V Solar Cells Grown on Unpolished and Reusable Spalled Ge Substrates

Substrate reuse offers a promising route toward enabling high-efficiency III-V solar cells to become cost-competitive for one-sun terrestrial applications. In this study, Ge films were spalled using an electroplated Ni stressor layer, and the fracture surface was characterized. Initial heteroepitaxial GaAs films grown on spalled Ge substrates by hydride vapor phase epitaxy were found to be single crystal with nearly equivalent growth rates between growth on epi-ready and unpolished spalled Ge substrates. We show the first demonstration of III-V solar cells (GaInAsP, E g ~ 1.7 eV) grown on unpolished spalled Ge substrates to assess the viability of substrate reuse. We demonstrate equivalent performance for a solar cell grown on spalled Ge and on a coloaded epi-ready Ge substrate, despite the residual roughness on the spalled Ge substrate and the lack of any substrate surface preparation. This initial demonstration of combining substrate reuse with the ability to grow III-V solar cells using a high growth rate and high throughput deposition process is a promising step toward low-cost III-V photovoltaics.

14 SOLAR ENERGY↗

DOE OSTI2026

Dynamic asymmetric strain imprinted into substrates by an oxide thin film

In film-substrate systems, the substrate role is often considered to be limited to providing static mechanical constraints. Dynamic film-substrate interactions when a structural change in the film modifies the substrate are generally disregarded. Here, using combined x-ray and electron microscopies, we observed that an electrically induced filament in a vanadium dioxide film created strong asymmetric strain in an underlying sapphire substrate. This asymmetric substrate strain fed back into the film and defined the filament expansion direction, revealing the importance of film-substrate dynamic interactions in determining film functionality. Furthermore, the strain imprint propagated at least tens of micrometers deep into the substrate, exceeding the film thickness by more than 200-fold, potentially enabling substrate functionalization as an active mechanical coupling media in three-dimensional integrated microelectronic architectures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

NASA NTRS1991

A comparative study of performance parameters of n(+)-p InP solar cells made by closed-ampoule sulfur diffusion into Cd- and Zn-doped p-type InP substrates

Preliminary results indicate that Cd-doped substrates are better candidates for achieving high efficiency solar cells fabricated by closed-ampoule sulfur (S) diffusion than Zn-doped substrates. The differences in performance parameters (i.e., 14.3 percent efficiency for Cd-doped vs. 11.83 percent in the case of Zn-doped substrates of comparable doping and etch pit densities) were explained in terms of a large increase in dislocation density as a result of S diffusion in the case of Zn-doped as compared to Cd-doped substrates. The In(x)S(y) and probably Zn(S) precipitates in the case of Zn-doped substrates, produce a dead layer which extends deep below the surface and strongly affects the performance parameters. It should be noted that the cells had an unoptimized single layer antireflective coating of SiO, a grid shadowing of 6.25 percent, and somewhat poor contacts, all contributing to a reduction in efficiency. It is believed that by reducing the external losses and further improvement in cell design, efficiencies approaching 17 percent at 1 AMO, 25 degrees should be possible for cells fabricated on these relatively high defect density Cd-doped substrates. Even higher efficiencies, 18 to 19 percent should be possible by using long-lifetime substrates and further improving front surface passivation. If solar cells fabricated on Cd-doped substrates turn out to have comparable radiation tolerance as those reported in the case of cells fabricated on Zn-doped substrates, then for certain space missions 18 to 19 percent efficient cells made by this method of fabrication would be viable.

Faur, Mircea↗

NASA NTRS2001

Factors Influencing Lava-Substrate Heat Transfer and Implications for Thermomechanical Erosion

We develop numerical simulations of basaltic lava flowing laminarly over a basalt substrate in order to examine the details of the lava dynamics and thermal boundary layers and to understand the implications for substrate heating. As the initial stage of a larger study of thermomechanical erosion in different planetary environments, we aim to understand why erosion occurs on Earth, why erosion features are not ubiquitous given the high temperatures involved, and whether it is a plausible mechanism for the formation of planetary channels such as lunar sinuous rilles and Venusian canali. Here we confine our attention to terrestrial lavas with well-known properties and eruption parameters. With relatively simple computational fluid dynamic simulations, most closely representing tube-fed hawaiian basalts (for which erosion has been documented), we demonstrate the importance of incorporating several key factors in models of lava flow/ substrate heat transfer, which have commonly been neglected in previous treatments. By addressing the interaction of the flow dynamics and heat transfer in the lava, our work suggests that the development of a temperature gradient in the base of the lava, even for undeveloped flow, has a significant influence on substrate temperature. The sensitivity of the lava-substrate interface temperature to the thermophysical properties of the lava and substrate suggests that a delicate balance is required for partial melting to occur. Thus, it might take weeks of continuous flow to initiate partial melting of the substrate at distances of several kilometers from the vent. These durations exceed the periods of stability typical of lava flowing in tubes; pauses, blockages, surges, and break-outs frequently disrupt the flow. However, natural irregularities in the flow dynamics or substrate topography might help to initiate and maintain substrate melting on shorter timescales by disturbing the intimately coupled dynamic and thermal boundary layers. Although a purely thermal mechanism cannot be ruled out, our findings support the premise that mechanical erosion may play a key role in reports of erosion based on field evidence.

Fagents, S. A.↗