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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS2010

Method and Circuit for In-Situ Health Monitoring of Solar Cells in Space

This innovation represents a method and circuit realization of a system designed to make in-situ measurements of test solar-cell operational parameters on orbit using readily available high-temperature and high-ionizing-radiation- tolerant electronic components. This innovation enables on-orbit in-situ solar-array health monitoring and is in response to a need recognized by the U.S. Air Force for future solar arrays for unmanned spacecraft. This system can also be constructed out of commercial-grade electronics and can be embedded into terrestrial solar power system as a diagnostics instrument. This innovation represents a novel approach to I-V curve measurement that is radiation and temperature hard, consumes very few system resources, is economical, and utilizes commercially available components. The circuit will also operate at temperatures as low as 55 C and up to +225 C, allowing it to reside close to the array in direct sunlight. It uses a swept mode transistor functioning as a resistive load while utilizing the solar cells themselves as the biasing device, so the size of the instrument is small and there is no danger of over-driving the cells. Further, this innovation utilizes nearly universal spacecraft bus resources and therefore can be readily adapted to any spacecraft bus allowing for ease of retrofit, or designed into new systems without requiring the addition of infrastructure. One unique characteristic of this innovation is that it effects the measurement of I-V curves without the use of large resistor arrays or active current sources normally used to characterize cells. A single transistor is used as a variable resistive load across the cell. This multi-measurement instrument was constructed using operational amplifiers, analog switches, voltage regulators, MOSFETs, resistors, and capacitors. The operational amplifiers, analog switches, and voltage regulators are silicon-on-insulator (SOI) technology known for its hardness to the effects of ionizing radiation. The SOI components used can tolerate temperatures up to 225 C, which gives plenty of thermal headroom allowing this circuit to perhaps reside in the solar cell panel itself where temperatures can reach over 100 C.

Krasowski, Michael J.↗
NASA NTRS2011

Rotation Rate of Saturn's Magnetosphere using CAPS Plasma Measurements

We present the present status of an investigation of the rotation rate of Saturn's magnetosphere using a 3D velocity moment technique being developed at Goddard which is similar to the 2D version used by Sittler et al. for SOI and similar to that used by Thomsen et al.. This technique allows one to nearly cover the full energy range of the Cassini Plasma Spectrometer (CAPS) IMS from 1 V . E/Q < 50 kV. Since our technique maps the observations into a local inertial frame, it does work during roll maneuvers. We make comparisons with the bi-Maxwellian fitting technique developed by Wilson et al. and the similar velocity moment technique by Thomsen et al. . We concentrate our analysis when ion composition data is available, which is used to weight the non-compositional data, referred to as singles data, to separate H+, H2+ and water group ions (W+) from each other. The chosen periods have high enough telemetry rates (4 kbps or higher) so that coincidence ion data, similar to that used by Sittler et al. for SOI is available. The ion data set is especially valuable for measuring flow velocities for protons, which are more difficult to derive using singles data within the inner magnetosphere, where the signal is dominated by heavy ions (i.e., proton peak merges with W+ peak as low energy shoulder). Our technique uses a flux function, which is zero in the proper plasma flow frame, to estimate fluid parameter uncertainties. The comparisons investigate the experimental errors and potential for systematic errors in the analyses, including ours. The rolls provide the best data set when it comes to getting 4PI coverage of the plasma but are more susceptible to time aliasing effects. In the future we will then make comparisons with magnetic field observations, Saturn ionosphere conductivities as presently known and the field aligned currents necessary for the planet to enforce corotation of the rotating plasma.

Sittler, E.↗
NASA NTRS2016

500 C Electronic Packaging and Dielectric Materials for High Temperature Applications

High-temperature environment operable sensors and electronics are required for exploring the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high temperature electronics, and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by these high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed. High-temperature environment operable sensors and electronics are required for probing the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and eventual applications of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high electronics and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed.

dielectric performance↗
NASA NTRS2003

Single-event upset in evolving commercial silicon-on-insulator microprocessor technologies

Single-event upset effects from heavy ions are measured for Motorola and IBM silicon-on-insulator (SOI) microprocessors with different feature sizes and core voltages. Multiple-bit upsets (MBU) in registers and were measured and compared with single-bit upsets. Also, the scaling of the cross section with reduction of feature size for SOI microprocessors was discussed.

Yoder, G. I.↗
NASA NTRS2024

The Plasma Proton Environment within Saturn’s F-G Ring Gap as Observed by the Cassini Plasma Spectrometer Ion Mass Spectrometer during Saturn Orbit Insertion

We report on the detection of protons and the potential detection of H 2 + between Saturn's F and G rings based on Cassini Plasma Spectrometer (CAPS) Ion Mass Spectrometer (IMS) time-of-flight (TOF) composition measurements acquired during Saturn Orbit Insertion (SOI) outbound pass. The range in dipole L shell is 2.3 < L < 2.8. Initial results based on TOF data were presented in E. C. Sittler et al., 2017. Here we present the latest results of our analysis. During the SOI outbound pass between the F and G rings the CAPS IMS was in a mode of reduced post-acceleration voltage at -6 kV instead of the usual -14.6 kV. This reduced voltage still allows the analysis of protons since 6 keV protons are minimally scattered by the instrument’s ultrathin carbon foils when compared to heavier ions O + and O 2 + , scattering. Background noise from penetrating radiation and ghost peaks produced by foil-scattered O + ions within the instrument were considered in our analysis. The analysis allowed determination of the proton density, temperature and flow velocity, accounting for spacecraft potential by assuming a convected Maxwellian for the proton velocity distribution function. We find average proton density n P = 3.2 ± 1.1 #/cm 3 , proton temperature T P = 1.74 ± 0.12 eV, proton rotational flow speed V P = 24 ± 1.5 km/s and spacecraft potential  SC = -0.8 ±1.5 V. These results are compared with previous theoretical estimates of H + and H 2 + ions within Saturn’s inner magnetosphere.

E C Sittler↗
DOE OSTI2023

Heterogeneous integration of an electro-optical platform

A hybrid photonic integrated circuit and a method of its manufacture are provided. A SiP functional layer is fabricated on an SOI wafer. A lithium niobate thin film is bonded to the SiP functional layer. The silicon handle layer is removed from the SOI wafer to expose buried oxide, and at least one III-V die is bonded to the exposed buried oxide. In embodiments, at least one waveguiding component is fabricated in the SiP functional layer. In embodiments, the SiP functional layer comprises a top waveguiding layer.

Kodigala, Ashok↗
DOE OSTI2019

Gate Quantum Capacitance Effects in Nanoscale Transistors

As the physical dimensions of a transistor gate continue to shrink to a few atoms, performance can be increasingly determined by the limited electronic density of states (DOS) in the gate and the gate quantum capacitance (C Q ). We demonstrate the impact of gate C Q and the dimensionality of the gate electrode on the performance of nanoscale transistors through analytical electrostatics modeling. For low-dimensional gates, the gate charge can limit the channel charge, and the transfer characteristics of the device become dependent on the gate DOS. Here, we experimentally observe for the first time, room-temperature gate quantization features in the transfer characteristics of single-walled carbon nanotube (CNT)-gated ultrathin silicon-on-insulator (SOI) channel transistors; features which can be attributed to the Van Hove singularities in the one-dimensional DOS of the CNT gate. In addition to being an important aspect of future transistor design, potential applications of this phenomenon include multilevel transistors with suitable transfer characteristics obtained via engineered gate DOS.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2015

Compact modeling of total ionizing dose and aging effects in MOS technologies

This paper presents a physics-based compact modeling approach that incorporates the impact of total ionizing dose (TID) and stress-induced defects into simulations of metal-oxide-semiconductor (MOS) devices and integrated circuits (ICs). This approach utilizes calculations of surface potential (ψs) to capture the charge contribution from oxide trapped charge and interface traps and to describe their impact on MOS electrostatics and device operating characteristics as a function of ionizing radiation exposure and aging effects. The modeling approach is demonstrated for bulk and silicon-on-insulator (SOI) MOS device. The formulation is verified using TCAD simulations and through the comparison of model calculations and experimental I-V characteristics from irradiated devices. The presented approach is suitable for modeling TID and aging effects in advanced MOS devices and ICs.

36 MATERIALS SCIENCE↗
DOE OSTI2013

OM300 Direction Drilling Module

OM300 – Geothermal Direction Drilling Navigation Tool: Design and produce a prototype directional drilling navigation tool capable of high temperature operation in geothermal drilling Accuracies of 0.1° Inclination and Tool Face, 0.5° Azimuth Environmental Ruggedness typical of existing oil/gas drilling Multiple Selectable Sensor Ranges High accuracy for navigation, low bandwidth High G-range & bandwidth for Stick-Slip and Chirp detection Selectable serial data communications Reduce cost of drilling in high temperature Geothermal reservoirs Innovative aspects of project Honeywell MEMS* Vibrating Beam Accelerometers (VBA) APS Flux-gate Magnetometers Honeywell Silicon-On-Insulator (SOI) High-temperature electronics Rugged High-temperature capable package and assembly process

15 GEOTHERMAL ENERGY↗
NASA NTRS2005

Hot-Electron Bolometer Mixers on Silicon-on-Insulator Substrates for Terahertz Frequencies

A terahertz Hot-Electron Bolometer (HEB) mixer design using device substrates based on Silicon-On-Insulator (SOI) technology is described. This substrate technology allows very thin chips (6 pm) with almost arbitrary shape to be manufactured, so that they can be tightly fitted into a waveguide structure and operated at very high frequencies with only low risk for power leakages and resonance modes. The NbTiN-based bolometers are contacted by gold beam-leads, while other beamleads are used to hold the chip in place in the waveguide test fixture. The initial tests yielded an equivalent receiver noise temperature of 3460 K double-sideband at a local oscillator frequency of 1.462 THz and an intermediate frequency of 1.4 GHz.

bolometer↗
DOE OSTI2019

Design and fabrication of ring resonator spectral response through-drop wavelengths selective

In this paper, we discuss the basic characteristics of the SOI based micro-ring resonator, and understand the influence of the high refractive index difference and the small size on the spectral characteristics of the ring resonator. The novelty and importance of the spectral response selectivity of ring resonators is driven by the grating couple technique. This advantage is the periodic variation of the refractive index in the coupled grating, which will result in the coupling of the conduction wave modes. By means of measurement and simulation, observe the changes and trends of the spectrum in steady state and transient state, and finally analyze the performance of the ring resonator in the application of signal processing. It achieves polarization-independent grating couplers with high efficiency, wide bandwidth and low polarization-dependent loss at around the 1560 nm optical communication band. Drop end set laser wavelength correction 1591.9 nm.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Gaseous fuels variation effects on first and second law analyses of a small direct injection engine for micro-CHP systems

This report examines the detailed energy and exergy distribution of a 34 cc (cc) air-cooled, two-stroke engine configured to operate on different natural gas (NG) compositions, pure methane, and propane. The engine was developed for application in a small, decentralized combined heat and power (CHP) system. It included optimized intake and exhaust resonators designed from Helmholtz resonance theory to promote effective scavenging. Operation occurred at wide-open-throttle (WOT) at an engine speed of 5400 revolutions per minute (RPM) with low-pressure direct injection (LPDI). Electronic ignition timing was adjusted for maximum brake torque (MBT) while the air-fuel ratio (AFR) was adjusted by injection duration, such that both rich and lean combustion were examined. In addition, start of injection (SOI) was adjusted to balance maximum fuel trapping and combustion stability. Full energy and exergy distribution analyses were completed, as engine operating regimes changed. Exergy was divided into work (available), lost (recoverable), and destructed availabilities. It was found that fuel loss and heat transfer contributed the most to exergy losses, accounting for around 15% and 9% of fuel exergy, respectively. Propane with the highest density, showed the highest in-cylinder trapped energy, heat transfer and, peak utilization factor (UF) of 85.3%. Due to fuel presence in the exhaust, lower 1st law efficiency did not necessarily result into a lower 2nd law efficiency. Higher mixture stratification with propane operation increased carbon monoxide (CO) emissions and hydrogen (H 2 ) content due to rich operation. CO oxidation could recover up to around 5% and 4% of injected fuel energy as heat for CHP system with propane and NG, respectively. Peak 2nd law efficiencies were around 60.5% while peak 1st law indicated efficiency was around 29%. This discrepancy was due to both exhaust hydrocarbon (HC from fuel slip and incomplete combustion) content, exhaust CO content, and heat loss availabilities.

03 NATURAL GAS↗
DOE OSTI2015

Radiation testing campaign results for understanding the suitability of FPGAs in detector electronics

SRAM based Field Programmable Gate Arrays (FPGAs) have been rarely used in High Energy Physics (HEP) due to their sensitivity to radiation. The last generation of commercial FPGAs based on 28 nm feature size and on Silicon On Insulator (SOI) technologies are more tolerant to radiation to the level that their use in front-end electronics is now feasible. FPGAs provide re-programmability, high-speed computation and fast data transmission through the embedded serial transceivers. They could replace custom application specific integrated circuits in front end electronics in locations with moderate radiation field. Finally, the use of a FPGA in HEP experiments is only limited by our ability to mitigate single event effects induced by the high energy hadrons present in the radiation field.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2025

A sub-5 ps jitter time-to-digital converter ASIC with back-gate delay tuning in 22 nm CMOS

We present the design of a Time-to-Digital Converter (TDC) ASIC together with performance characterization results at cryogenic temperature (6-8 K), and at room temperature using emulated Low-Gain Avalanche Detector (LGAD) signals. The TDC design uses a two-step architecture with a ring-oscillator based counter and a Vernier delay line fine TDC. The TDC is implemented in an FD-SOI process, and back-gate tuning is used not only to correct threshold variation due to cryogenic operation, but also as a novel way to tune TDC delay elements with very little overhead. Using this technique, we demonstrate a design with very low power (0.5 mW) and area (0.003 mm 2 ). We present test results using the Fermilab Constant Fraction Discriminator (FCFD) ASIC to produce discriminated signals from an internal charge injection mechanism that mimics the waveform and signal amplitude of minimum ionizing particles impinging on LGAD sensors. We characterize the time precision of the full system and verify that the TDC ASIC contributes a negligible amount to the total system time precision, fully consistent with the expected jitter contribution of less than 5 ps. In conclusion, the results presented here demonstrate the utility of our TDC for applications in physics and quantum communications.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Spin Transport in Ferromagnet-InSb Nanowire Quantum Devices

Signatures of Majorana zero modes (MZMs), which are the building blocks for fault-tolerant topological quantum computing, have been observed in semiconductor nanowires (NW) with strong spin-orbital-interaction (SOI), such as InSb and InAs NWs with proximity-induced superconductivity. Realizing topological superconductivity and MZMs in this most widely-studied platform also requires eliminating spin degeneracy, which is realized by applying a magnetic field to induce a helical gap. Yet, the applied field can adversely impact the induced superconducting state in the NWs and also places geometric restrictions on the device, which can affect scaling of future MZM-based quantum registers. These challenges could be circumvented by integrating magnetic elements with the NWs. With this motivation, in this work we report the first experimental investigation of spin transport across InSb NWs, which are enabled by devices with ferromagnetic (FM) contacts. We determine signatures of spin polarization and spin-dependent transport in the quasi-one-dimensional ballistic regime. Moreover, we show that electrostatic gating tunes the observed magnetic signal and also reveals a transport regime where the device acts as a spin filter. These results open an avenue towards developing MZM devices in which spin degeneracy is lifted locally, without the need of an applied magnetic field. They further provide a path for realizing spin-based devices that leverage spin-orbital states in quantum wires.

1D ballistic spin transport↗
DOE OSTI2018

Valley dependent anisotropic spin splitting in silicon quantum dots

Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent experiments have utilized gradient magnetic fields from integrated micro-magnets to produce an extrinsic coupling between spin and charge, thereby electrically driving electron spin resonance (ESR). However, spins in silicon QDs experience a complex interplay between spin, charge, and valley degrees of freedom, influenced by the atomic scale details of the confining interface. We report experimental observation of a valley dependent anisotropic spin splitting in a Si QD with an integrated micro-magnet and an external magnetic field. We show by atomistic calculations that the spin-orbit interaction (SOI), which is often ignored in bulk silicon, plays a major role in the measured anisotropy. Moreover, inhomogeneities such as interface steps strongly affect the spin splittings and their valley dependence. This atomic-scale understanding of the intrinsic and extrinsic factors controlling the valley dependent spin properties is a key requirement for successful manipulation of quantum information in Si QDs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗