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At least 235 records · Page 13

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NASA NTRS2005

Simulated Space Environment Effects on the Blocking Force of Silicone Adhesive

The International Space Station (ISS) solar arrays utilize MD-944 diode tape to protect the underlying diodes in the solar array panel circuit and also provide thermal conditioning and mechanical support. The diode tape consists of silicone pressure sensitive adhesive (Dow Coming QC-7725) with a protective Kapton over-layer. On-orbit, the Kapton over-layer will erode under exposure to atomic oxygen (AO) and the underlying exposed silicone adhesive will ultimately convert, under additional AO exposure, to a glass like silicate. The current operational plan is to retract ISS solar array P6 and leave it stored under load for a long duration (6 months or more) during ISS assembly. With the Kapton over-layer eroded away, the exposed silicone adhesive must not cause the solar array to stick to itself or cause the solar array to fail during redeployment. Previous testing by Lockheed-Martin Space Systems (LMSS) characterized silicone blocking following exposure to low energy atomic oxygen (AO) in an asher facility, but this is believed to be conservative. An additional series of tests was performed by the Environmental Effects Group at MSFC under direction from the ISS Program Office Environments Team. This test series included high energy AO (5 eV), near ultraviolet (NUV) radiation and ionizing radiation, singly and in combination. Additional samples were exposed to thermal energy AO (<0.1 ev) for comparison to the LMSS tests. Diode tape samples were exposed to each environment constituent individually, put under preload for seven days and then the resulting blocking force was measured using a tensile machine. Additional samples were exposed to AO, NUV and electrons in series and then put under long term (three to ten months) preload to determine the effect of preload duration on the resulting blocking force of the silicone-to-silicone bond. Test results indicate that high energy AO, ultraviolet radiation and electron ionizing radiation exposure all reduce the blocking force for a silicone-to-silicone bond. AO exposure produces the most significant reduction in blocking force.

Boeder, Paul↗

NASA NTRS2005

Ground-Laboratory to In-Space Effective Atomic-Oxygen Fluence Determined for DC 93-500 Silicone

Surfaces on the leading edge of spacecraft in low Earth orbit (e.g., surface facing the velocity direction), such as on the International Space Station, are subject to atomic oxygen attack, and certain materials are susceptible to erosion. Therefore, ground-based laboratory testing of the atomic oxygen durability of spacecraft materials is necessary for durability assessment when flight data are not available. For accurate space simulation, the facility is commonly calibrated on the basis of the mass loss of Kapton (DuPont, Wilmington, DE) as a control sample for effective fluence determination. This is because Kapton has a well-characterized atomic oxygen erosion yield (E(sub y), in cubic centimeters per atom) in the low Earth orbit (LEO) environment. Silicones, a family of commonly used spacecraft materials, do not chemically erode away with atomic oxygen attack like other organic materials that have volatile oxidation products. Instead, silicones react with atomic oxygen and form an oxidized hardened silicate surface layer. Often the loss of methyl groups causes shrinkage of the surface skin and "mud-tile" crazing degradation. But silicones often do not lose mass, and some silicones actually gain mass during atomic oxygen exposure. Therefore, the effective atomic oxygen fluence for silicones in a ground-test facility should not be determined on the basis of traditional mass-loss measurements, as it is with polymers that erode. Another method for determining effective fluence needs to be employed for silicones. A new technique has been developed at the NASA Glenn Research Center for determining the effective atomic oxygen fluence for silicones in ground-test facilities. This technique determines the equivalent amount of atomic oxygen oxidation on the basis of changes in the surface-oxide hardness. The specific approach developed was to compare changes in the surface hardness of ground-laboratory-exposed DC93-500 silicone with DC93-500 exposed to LEO atomic oxygen as part of a shuttle flight experiment. The on-the-ground to in-space effective atomic oxygen fluence was determined on the basis of the Kapton effective fluence in the ground-laboratory facility that produced the same hardness for the fluence in space.

deGroh, Kim K.↗

NASA NTRS1982

Method of densifying an article formed of reaction bonded silicon nitride

A method of densifying an article formed of reaction bonded silicon nitride is disclosed. The reaction bonded silicon nitride article is packed in a packing mixture consisting of silicon nitride powder and a densification aid. The reaction bonded silicon nitride article and packing powder are sujected to a positive, low pressure nitrogen gas treatment while being heated to a treatment temperature and for a treatment time to cause any open porosity originally found in the reaction bonded silicon nitride article to be substantially closed. Thereafter, the reaction bonded silicon nitride article and packing powder are subjected to a positive high pressure nitrogen gas treatment while being heated to a treatment temperature and for a treatment time to cause a sintering of the reaction bonded silicon nitride article whereby the strength of the reaction bonded silicon nitride article is increased.

Mangels, John A.↗

NASA NTRS1996

Porous silicon carbide (SIC) semiconductor device

Porous silicon carbide is fabricated according to techniques which result in a significant portion of nanocrystallites within the material in a sub 10 nanometer regime. There is described techniques for passivating porous silicon carbide which result in the fabrication of optoelectronic devices which exhibit brighter blue luminescence and exhibit improved qualities. Based on certain of the techniques described porous silicon carbide is used as a sacrificial layer for the patterning of silicon carbide. Porous silicon carbide is then removed from the bulk substrate by oxidation and other methods. The techniques described employ a two-step process which is used to pattern bulk silicon carbide where selected areas of the wafer are then made porous and then the porous layer is subsequently removed. The process to form porous silicon carbide exhibits dopant selectivity and a two-step etching procedure is implemented for silicon carbide multilayers.

Shor, Joseph S.↗

NASA NTRS1995

Method of fabricating porous silicon carbide (SiC)

Shor, Joseph S.↗

NASA NTRS2009

Silicon Wafer-Scale Substrate for Microshutters and Detector Arrays

The silicon substrate carrier was created so that a large-area array (in this case 62,000+ elements of a microshutter array) and a variety of discrete passive and active devices could be mounted on a single board, similar to a printed circuit board. However, the density and number of interconnects far exceeds the capabilities of printed circuit board technology. To overcome this hurdle, a method was developed to fabricate this carrier out of silicon and implement silicon integrated circuit (IC) technology. This method achieves a large number of high-density metal interconnects; a 100-percent yield over a 6-in. (approximately equal to 15-cm) diameter wafer (one unit per wafer); a rigid, thermally compatible structure (all components and operating conditions) to cryogenic temperatures; re-workability and component replaceability, if required; and the ability to precisely cut large-area holes through the substrate. A method that would employ indium bump technology along with wafer-scale integration onto a silicon carrier was also developed. By establishing a silicon-based version of a printed circuit board, the objectives could be met with one solution. The silicon substrate would be 2 mm thick to survive the environmental loads of a launch. More than 2,300 metal traces and over 1,500 individual wire bonds are required. To mate the microshutter array to the silicon substrate, more than 10,000 indium bumps are required. A window was cut in the substrate to allow the light signal to pass through the substrate and reach the microshutter array. The substrate was also the receptacle for multiple unpackaged IC die wire-bonded directly to the substrate (thus conserving space over conventionally packaged die). Unique features of this technology include the implementation of a 2-mmthick silicon wafer to withstand extreme mechanical loads (from a rocket launch); integrated polysilicon resistor heaters directly on the substrate; the precise formation of an open aperture (approximately equal to 3x3cm) without any crack propagation; implementation of IR transmission blocking techniques; and compatibility with indium bump bonding. Although designed for the microshutter arrays for the NIRSpec instrument on the James Webb Space Telescope, these substrates can be linked to microshutter applications in the photomask generation and stepper equipment used to make ICs and microelectromechanical system (MEMS) devices.

Jhabvala, Murzy↗

NASA NTRS2012

Optical and Scanning Electron Microscopy of the Materials International Space Station Experiment (MISSE) Spacecraft Silicone Experiment

Under a microscope, atomic oxygen (AO) exposed silicone surfaces are crazed and seen as "islands" separated by numerous crack lines, much analogous to mud-tile cracks. This research characterized and compared the degree of AO degradation of silicones by analyzing optical microscope images of samples exposed to low Earth orbit (LEO) AO as part of the Spacecraft Silicone Experiment. The Spacecraft Silicone Experiment consisted of eight DC 93-500 silicone samples exposed to eight different AO fluence levels (ranged from 1.46 to 8.43 10(exp 21) atoms/sq cm) during two different Materials International Space Station Experiment (MISSE) missions. Image analysis software was used to analyze images taken using a digital camera. To describe the morphological degradation of each AO exposed flight sample, three different parameters were selected and estimated: (1) average area of islands was determined and found to be in the 1000 to 3100 sq mm range; (2) total length of crack lines per unit area of the sample surface were determined and found to be in the range of 27 to 59 mm of crack length per sq mm of sample surface; and (3) the fraction of sample surface area that is occupied by crack lines was determined and found to be in the 25 to 56 percent range. In addition, average crack width can be estimated from crack length and crack area measurements and was calculated to be about 10 mm. Among the parameters studied, the fraction of sample surface area that is occupied by crack lines is believed to be most useful in characterizing the degree of silicone conversion to silicates by AO because its value steadily increases with increasing fluence over the entire fluence range. A series of SEM images from the eight samples exposed to different AO fluences suggest a complex sequence of surface stress due to surface shrinkage and crack formation, followed by re-distribution of stress and shrinking rate on the sample surface. Energy dispersive spectra (EDS) indicated that upon AO exposure, carbon content on the surface decreased relatively quickly at the beginning, to 32 percent of the pristine value for the least exposed sample in this set of experiments (1.46 10(exp 21) atoms/sq cm), but then decreased slowly, to 22 percent of the pristine value for the most exposed sample in this set of experiment (8.43 10(exp 21) atoms/sq cm). The oxygen content appears to increase at a slower rate. The least and most AO exposed samples were, respectively, 52 and 150 percent above the pristine values. The silicone samples with the greater AO exposure (7.75 10(exp 21) atoms/sq cm and higher) appear to have a surface layer which contains SiO2 with perhaps small amounts of unreacted silicone, CO and CO2 sealed inside.

Hung, Ching-cheh↗

NASA NTRS2014

Rapid Solid-State Metathesis Routes to Nanostructured Silicon-Germainum

Methods for producing nanostructured silicon and silicon-germanium via solid state metathesis (SSM). The method of forming nanostructured silicon comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and an alkaline earth metal silicide into a homogeneous powder, and initating the reaction between the silicon tetraiodide (SiI4) with the alkaline earth metal silicide. The method of forming nanostructured silicon-germanium comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and a germanium based precursor into a homogeneous powder, and initiating the reaction between the silicon tetraiodide (SiI4) with the germanium based precursors.

Kaner, Richard B.↗

NASA NTRS1975

Improved toughness of silicon carbide

Several techniques were employed to apply or otherwise form porous layers of various materials on the surface of hot-pressed silicon carbide ceramic. From mechanical properties measurements and studies, it was concluded that although porous layers could be applied to the silicon carbide ceramic, sufficient damage was done to the silicon carbide surface by the processing required so as to drastically reduce its mechanical strength. It was further concluded that there was little promise of success in forming an effective energy absorbing layer on the surface of already densified silicon carbide ceramic that would have the mechanical strength of the untreated or unsurfaced material. Using a process for the pressureless sintering of silicon carbide powders it was discovered that porous layers of silicon carbide could be formed on a dense, strong silicon carbide substrate in a single consolidation process.

Palm, J. A.↗

NASA NTRS1979

Development and evaluation of die and container materials. Low cost silicon solar array project

Specific compositions of high purity silicon aluminum oxynitride (Sialon) and silicon beryllium oxynitride (Sibeon) solid solutions were shown to be promising refractory materials for handling and manipulating solar grade silicon into silicon ribbon. Evaulation of the interaction of these materials in contact with molten silicon indicated that solid solutions based upon beta-Si3N4 were more stable than those based on Si2N2O. Sibeon was more resistant to molten silicon attack than Sialon. Both materials should preferably be used in an inert atmosphere rather than under vacuum conditions because removal of oxygen from the silicon melt occurs as SiO enhances the dissolution of aluminum and beryllium. The wetting angles of these materials were low enough for these materials to be considered as both die and container materials.

Wills, R. R.↗

NASA NTRS1979

Friction and fracture of single-crystal silicon carbide in contact with itself and titanium

An investigation was conducted to examine the friction properties and mechanical behavior of single-crystal silicon carbide (0001) surface sliding against itself and against polycrystalline titanium. The results indicate hexagon-shaped pits of silicon carbide and the formation of platelet hexagon-shaped wear debris of silicon carbide due to cleavages of both prismatic and basal planes as a result of silicon carbide sliding against itself. The fracturing of silicon carbide also occurs near the adhesive bond to titanium. The wear debris produced by brittle fracture plows the titanium and transfers to it. Further, the silicon carbide wear debris, which adhered and transferred to titanium, plows the silicon carbide surface and transfers back to it

Miyoshi, K.↗

NASA NTRS1980

Silicon oxidation in fluoride solutions

Silicon is produced in a NaF, Na2SiF6, and Na matrix when SiF4 is reduced by metallic sodium. Hydrogen is evolved during acid leaching to separate the silicon from the accompanying reaction products, NaF and Na2SiF6. The hydrogen evolution reaction was studied under conditions simulating leaching conditions by making suspensions of the dry silicon powder in aqueous fluoride solutions. The mechanism for the hydrogen evolution is discussed in terms of spontaneous oxidation of silicon resulting from the cooperative effects of (1) elemental sodium in the silicon that reacts with water to remove a protective silica layer, leaving clean reactive silicon, and (2) fluoride in solution that complexes with the oxidized silicon in solution and retards formation of a protective hydrous oxide gel.

Sancier, K. M.↗

NASA NTRS1981

Four- and five-layer silicon-clad dielectric waveguides

Computer modeling studies conducted on four-layer silicon-clad dielectric waveguides indicate that the attenuation (alpha) and mode index (beta/K) behave as exponentially damped sinusoids as the silicon thickness is increased. The observed effect can be explained quite simply as a periodic coupling between the guided modes of the lossless structure and the lossy modes supported by the high-refractive index silicon. The attenuation and mode index are significantly altered by conductivity changes in the silicon; an amplitude modulator and an intensity modulator were proposed using these results. Predicted high attenuations in the device may be reduced significantly with a silicon dioxide buffer layer between the semiconductor and the polystyrene guide. Experimental confirmation of the predicted characteristics is still necessary. A number of thin-silicon film waveguides have been RF sputtered but attenuation measurements to verify the damped oscillatory behavior are forthcoming. Conductivity variations of the silicon should demonstrate the modulation capabilities.

Mcwright, G.↗

NASA NTRS1983

Polycrystalline silicon material availability and market pricing outlook study for 1980 to 88: January 1983 update

Photovoltaic solar cell arrays which convert solar energy into electrical energy can become a cost effective, alternative energy source provided that an adequate supply of low priced materials and automated fabrication techniques are available. Presently, silicon is the most promising cell material for achieving the near term cost goals of the Photovoltaics Program. Electronic grade silicon is produced primarily for the semiconductor industry with the photovoltaic industry using, in most cases, the production rejects of slightly lower grade material. Therefore, the future availability of adequate supplies of low cost silicon is one of the major concerns of the Photovoltaic Program. The supply outlook for silicon with emphasis on pricing is updated and is based primarily on an industry survey conducted by a JPL consultant. This survey included interviews with polycrystalline silicon manufacturers, a large cross section of silicon users and silicon solar cell manufacturers.

Costogue, E.↗

NASA NTRS1982

Critical technology limits to silicon material and sheet production

Earlier studies have indicated that expenditures related to the preparation of high-purity silicon and its conversion to silicon sheet represent from 40 to 52 percent of the cost of the entire panel. The present investigation is concerned with the elements which were selected for study in connection with the Flat-Plate Solar Array (FSA) Project. The first of two technologies which are being developed within the FSA Project involves the conversion of metallurgical-grade silicon through a silane purification process to silicon particles. The second is concerned with the conversion of trichlorosilane to dichlorosilane, and the subsequent production of silicon using modified rod reactors of the Siemens type. With respect to silicon sheet preparation, efforts have been focused both on the preparation of ingots, followed by wafering, and the direct crystallization of molten silicon into a ribbon or film.

Leipold, M. H.↗

NASA NTRS1982

XPS, AES and friction studies of single-crystal silicon carbide

The surface chemistry and friction behavior of a single crystal silicon carbide surface parallel to the 0001 plane in sliding contact with iron at various temperatures to 1500 C in a vacuum of 3 x 10 nPa are investigated using X-ray photoelectron and Auger electron spectroscopy. Results show that graphite and carbide-type carbon are seen primarily on the silicon carbide surface in addition to silicon at temperatures to 800 C by both types of spectroscopy. The coefficients of friction for iron sliding against a silicon carbide surface parallel to the 0001 plane surface are found to be high at temperatures up to 800 C, with the silicon and carbide-type carbon at maximum intensity in the X-ray photoelectron spectroscopy at 800 C. The concentration of the graphite increases rapidly on the surface as the temperature is increased above 800 C, while the concentrations of the carbide-type carbon and silicon decrease rapidly and this presence of graphite is accompanied by a significant decrease in friction. Preheating the surfaces to 1500 C also gives dramatically lower coefficients of friction when reheating in the sliding temperature range of from room temperature to 1200 C, with this reduction in friction due to the graphite layer on the silicon carbide surface.

Miyoshi, K.↗

NASA NTRS1985

Upgrading Metallurgical-Grade Silicon

Closed-loop process produces semiconductor-grade silicon. Metallurgical-grade silicon converted to ultrapure silicon by reacting with hydrogen and silicon tetrahalide to form trihalosilane, purifying this intermediate and again decomposing to high purity silicon in third stage. Heterogeneously and homogeneously nucleated polycrystalline silicon used in semiconductor device applications and in silicon photovoltaic solar cell fabrication.

Woerner, L. M.↗

NASA NTRS1984

Polycrystalline Silicon Sheets for Solar Cells by the Improved Spinning Method

Cost reduction of silicon materials in the photovoltaic program of materials was examined. The current process of producing silicon sheets is based entirely on the conventional Czochralski ingot growth and wafering used in the semiconductor industry. The current technology cannot meet the cost reduction demands for producing low cost silicon sheets. Alternative sheet production processes such as unconventional crystallization are needed. The production of polycrystalline silicon sheets by unconventional ingot technology is the casting technique. Though large grain sheets were obtained by this technique, silicon ribbon growth overcomes deficiencies of the casting process by obtaining the sheet directly from the melt. The need to solve difficulties of growth stability and impurity effects are examined. The direct formation process of polycrystalline silicon sheets with large grain size, smooth surface, and sharp edges from the melt with a high growth rate which will yield low cost silicon sheets for solar cells and the photovoltaic characteristics associated with this type of sheet to include an EBIC study of the grain boundaries are described.

Maeda, Y.↗