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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Protective gate device consisting of alternating heavily doped n(+) and p(+) diffusions eliminates breakdown voltages in silicon oxide on sapphire arrays caused by electrostatic discharge from person or equipment. Diffusions are easily produced during normal double epitaxial processing. Devices with nine layers had 27-volt breakdown.
The Mariner 9 infrared spectroscopy experiment has provided good quality spectra of many areas of Mars, predominantly in the Southern Hemisphere. Large portions of the thermal emission spectra are significantly affected by dust with a silicon oxide content approximately corresponding to that of an intermediate igneous rock, implying that Mars has undergone a substantial geochemical differentiation. Derived temperature profiles indicate a warm daytime upper atmosphere with a strong warming over the south polar cap. Atmospheric water vapor is clearly observed over the south polar area and less strongly over other regions.
Analysis of radiation damage of MOSFET data from Explorer 34 (IMP-F), and radiation damage characteristics of MOSFET with boron diffused between a silicon semiconductor and silicon oxide are considered. The first subject is an interpretation of the discrepancy between the space data and the laboratory data. The second subject is an attempt to analyze the radiation damage characteristic of MOSFET when there is modification of electrical properties in the gate oxide region.
The design data for six polycrystalline dielectric materials are presented to describe the optical, thermal, and mechanical properties. The materials are aluminum oxide, calcium fluoride, magnesium fluoride, magnesium oxide, silicon dioxide, and titanium dioxide. The primary interest is in the polycrystalline state, although single crystal data are included when appropriate. The temperature range is room temperature to melting point. The wavelength range is from near ultraviolet to near infrared.
The Mariner 9 IR spectroscopy experiment has provided good-quality spectra of many areas of Mars, predominantly in the southern hemisphere. Large portions of the thermal emission spectra are significantly affected by dust with a silicon oxide content approximately corresponding to that of an intermediate igneous rock, thus implying that Mars has undergone substantial geochemical differentiation. Derived temperature profiles indicate a warm daytime upper atmosphere with a strong warming over the south polar cap. Atmospheric water vapor is clearly observed over the south polar area and less strongly over other regions.
Atom recombination catalytic rates for surface coatings of various candidate thermal protection system materials for the space shuttle vehicle were obtained from measurements in arc jet, air flow. The coatings, chrome oxides, siliconized carbon/carbon, hafnium/tantalum carbide on carbon/carbon, and niobium silicide, were bonded to the sensitive surface of transient slug calorimeters that measured the heat transfer rates to the coatings. The catalytic rates were inferred from these heat transfer rates Surface temperatures of the calorimeters varied from approximately 300 to 410 K.
Modifications to the Pioneer 10/11 meteoroid detection experiment to allow it to be used for outer planet missions were investigated. Both pressurized cells and metal-oxide silicon (MOS) penetration detectors are considered. Both the sensors systems and the electronics are treated. Investigation of the calibration and characterization of the MOS penetration detector is reported.
Recent results on tunneling in thin MOS structures are described. Thermally grown SiO2 films in the thickness range of 22-40 A have been shown to be effectively uniform on an atomic scale and exhibit an extremely abrupt oxide-silicon interface. Resonant reflections are observed at this interface for Fowler-Nordheim tunneling and are shown to agree with the exact theory for a trapezoidal barrier. Tunneling at lower fields is consistent with elastic tunneling into the silicon direct conduction band and, at still lower fields, inelastic tunneling into the indirect conduction band. Approximate dispersion relations are obtained over portions of the silicon-dioxide energy gap and conduction band.
An investigation regarding the occurrence of Si ions is conducted, taking into account an unusual metal ion structure observed during a meteor shower event. Loss processes involving silicon oxides are considered in connection with a study of the reasons for the unique Si(+) distribution found. It is suggested that below 100 km Si(+) is rapidly depleted by two- and three-body reactions with molecular oxygen, forming SiO2(+) which then recombines.
A group of common ceramic materials (alumina, magnesium oxide, silicon nitride, and silicon carbide) were characterized through literature searches according to their physical properties. The files used were the NASA file, DDC/GRA File, Engineering Index File and standard library searches. The results of these searches are arranged by material properties including mechanical, electrical, electromagnetic, where applicable, and fracture; and the entries are arranged in chronological order by candidate. A list, by author, follows where tabular information including charts and figures of results is given along with a brief statement of the results and conclusions. In both cases, information on the independent variables along with their range is given. The results of an extensive industry survey asking for names of other candidates on which information is lacking and also what type of service, if any, is desired in keeping a current information file on general ceramic materials.
A general model for time-dependent breakdown in metal-oxide-silicon (MOS) structures is developed and related to experimental measurements on samples deliberately contaminated with Na. A statistical method is used for measuring the breakdown probability as a function of log time and applied field. It is shown that three time regions of breakdown can be explained respectively in terms of silicon surface defects, ion emission from the metal interface, and lateral ion diffusion at the silicon interface.
A 256 word by 8-bit random access memory chip was developed utilizing p channel, metal gate metal-nitride-oxide-silicon (MNOS) technology; with operational characteristics of a 2.5 microsecond read cycle, a 6.0 microsecond write cycle, 800 milliwatts of power dissipation; and retention characteristics of 10 to the 8th power read cycles before data refresh and 5000 hours of no power retention. Design changes were implemented to reduce switching currents that caused parasitic bipolar transistors inherent in the MNOS structure to turn on. Final wafer runs exhibited acceptable yields for a die 250 mils on a side. Evaluation testing was performed on the device in order to determine the maturity of the device. A fixed gate breakdown mechanism was found when operated continuously at high temperature.
The behavior in space environment of evaporated Al uncoated and coated with reactively deposited silicon oxide (SiOx), electron beam evaporated SiO2 and Al2O3, and Al and Ag coated with double layers of Al2O3 + SiOx is compared with metallized Teflon and Kapton, anodized Al (Alzak), and white paints. Flight data from three calorimetric experiments and one reflectometer flown in different orbital environments are compared with laboratory test data. The results demonstrate that evaporated thin films are extremely versatile and stable coatings for space applications. Through the use of control samples studied in different laboratory tests and monitored for up to 12,000 hours of solar exposure in different orbits, a classification of orbital severity and an estimate of laboratory simulation accuracy is obtained.
Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE cell). The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.
The infrared and Raman spectra of N2 matrix isolated silicon oxides are investigated. The vibrational frequencies of SiO, Si2O2, and Si3O3 were identified and assigned on the basis of normal coordinate analyses. Heating the solid to 50 K (evaporating the matrix) leaves a residue whose infrared spectrum is identical to that of a smoke condensed at ambient temperatures. Further heating of the sample to 500 K leads to significant changes in the band shapes. Investigations of the infrared spectra at several stages of the diffusion process result in the proposal of a mechanism for the transition from molecular properties to those of the residue (bulk) material, which is characterized as Si2O3.
High open circuit voltage cell designs based on 0.1 Ohm cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th power per sq cm. Of the three cell designs, radiation induced degradation was greatest in the high low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short circuit current and open circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of an HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.
Three high open-circuit voltage cell designs based on 0.1 ohm-cm p-type silicon were irradiated with 1 MeV electrons and their performance determined to fluences as high as 10 to the 15th/sq cm. Of the three cell designs, radiation induced degradation was greatest in the high-low emitter (HLE) cell. The diffused and ion implanted cells degraded approximately equally but less than the HLE cell. Degradation was greatest in an HLE cell exposed to X-rays before electron irradiation. The cell regions controlling both short-circuit current and open-circuit voltage degradation were defined in all three cell types. An increase in front surface recombination velocity accompanied time dependent degradation of a HLE cell after X-irradiation. It was speculated that this was indirectly due to a decrease in positive charge at the silicon-oxide interface. Modifications aimed at reducing radiation induced degradation are proposed for all three cell types.
The infrared and Raman spectra of N2 matrix-isolated silicon oxides were investigated. The vibrational frequencies of SiO, Si2O2, and Si3O3 were identified and assigned on the basis of normal coordinate analyses. Heating the solid to approximately 50 K (evaporating the matrix) leaves a residue whose infrared spectrum is identical to that of a smoke condensed at ambient temperatures. Further heating of the sample to approximately 500 K leads to significant changes in the band shapes. Investigations of the infrared spectra at several stages of the diffusion process enable a mechanism to be proposed for the transition from molecular properties to those of the residue (bulk) material, which has been characterized as Si2O3.