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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Transition probabilities for the 3s2 3p(2P0)-3s3p2(4P) intersystem lines of Si II

Intensity ratios of lines of the spin-changing 'intersystem' multiplet of S II (4P yields 2P0) at 234 nm have been used to determine electron densities and temperatures in a variety of astrophysical environments. However, the accuracy of these diagnostic calculations have been limited by uncertainties associated with the available atomic data. We report the first laboratory measurement, using an ion-trapping technique, of the radiative lifetimes of the three metastable levels of the 3s3p2 4P term of Si II. Our results are 104 +/- 16, 406 +/- 33, and 811 +/- 77 micro-s for lifetimes of the J = 1/2, 5/2, and 3/2 levels, respectively. A-values were derived from our lifetimes by use of measured branching fractions. Our A-values, which differ from calculated values by 30 percent or more, should give better agreement between modeled and observed Si II line ratios.

Calamai, Anthony G.↗
NASA NTRS1983

Si:Bi array detectors and astronomical applications of the Goddard 10 micron camera

An improved 4 to 18 micron array camera system was developed at NASA Goddard SFC for astronomical photometry, using an Aerojet Electro Systems Corp. 16 x 16 Si:Bi accumulation mode charge injection device (AMCID) which could be suitable for eventual low-background spaceflight applications. An astronomical observing program using this device was carried out as a collaboration between NASA Goddard (Infrared and Radio Astronomy Branch and Micro Electronics Branch), the Harvard/Smithsonian Center for Astrophysics, and Steward Observatory of the University of Arizona. In 1983 the camera system was revised, and a new Aeroject Si:Bi array with 16 x 16 active pixels was obtained from NASA/Ames Research Center as part of a new scientific collaboration between the Ames and Goddard infrared array research groups. The 16 x 16 device had sufficiently good sensitivity, uniformity and noise characteristics to be used for successful observations at the Mt. Lemmon 60 and 61 inch telescopes in May 1983. Complete laboratory characterization of the 16 x 16 array was carried out in summer of 1983. Initial results indicate that this detector has sensitivity and noise characteristics comparable to other devices from the same generation of Aerojet arrays.

Lamb, Gerald↗
NASA NTRS1993

Results of some initial space qualification testing on triple junction a-Si and CuInSe2 thin film solar cells

A series of environmental tests were completed on one type of triple junction a-Si and two types of CuInSe2 thin film solar cells. The environmental tests include electron irradiation at energies of 0.7, 1.0, and 2.0 MeV, proton irradiation at energies of 0.115, 0.24, 0.3, 0.5, 1.0, and 3.0 MeV, post-irradiation annealing at temperatures between 20 C and 60 C, long term exposure to air mass zero (AM0) photons, measurement of the cells as a function of temperature and illumination intensity, and contact pull strength tests. As expected, the cells are very resistant to electron and proton irradiation. However, when a selected cell type is exposed to low energy protons designed to penetrate to the junction region, there is evidence of more significant damage. A significant amount of recovery was observed after annealing in several of the cells. However, it is not permanent and durable, but merely a temporary restoration, later nullified with additional irradiation. Contact pull strengths measured on the triple junction a-Si cells averaged 667 grams, and pull strengths measured on the Boeing CuInSe2 cells averaged 880 grams. Significant degradation of all cell types was observed after exposure to a 580 hour photon degradation test, regardless of whether the cells had been unirradiated or irradiated (electrons or protons). Although one cell from one manufacturer lost approximately 60 percent of its power after the photon test, several other cells from this manufacturer did not degrade at all.

Mueller, Robert L.↗
NASA NTRS1993

Si-29 NMR spectroscopy of naturally-shocked quartz from Meteor Crater, Arizona: Correlation to Kieffer's classification scheme

We have applied solid state Si-29 nuclear magnetic resonance (NMR) spectroscopy to five naturally-shocked Coconino Sandstone samples from Meteor Crater, Arizona, with the goal of examining possible correlations between NMR spectral characteristics and shock level. This work follows our observation of a strong correlation between the width of a Si-29 resonance and peak shock pressure for experimentally shocked quartz powders. The peak width increase is due to the shock-induced formation of amorphous silica, which increases as a function of shock pressure over the range that we studied (7.5 to 22 GPa). The Coconino Sandstone spectra are in excellent agreement with the classification scheme of Kieffer in terms of presence and approximate abundances of quartz, coesite, stishovite, and glass. We also observe a new resonance in two moderately shocked samples that we have tentatively identified with silicon in tetrahedra with one hydroxyl group in a densified form of amorphous silica.

Boslough, M. B.↗
NASA NTRS1994

SI (Metric) handbook

This guide provides information for an understanding of SI units, symbols, and prefixes; style and usage in documentation in both the US and in the international business community; conversion techniques; limits, fits, and tolerance data; and drawing and technical writing guidelines. Also provided is information of SI usage for specialized applications like data processing and computer programming, science, engineering, and construction. Related information in the appendixes include legislative documents, historical and biographical data, a list of metric documentation, rules for determining significant digits and rounding, conversion factors, shorthand notation, and a unit index.

Artusa, Elisa A.↗
NASA NTRS1994

Conversion of polymers of methyl- and vinylsilane to Si-C ceramics

Poly(methylsilane) and poly(vinylsilane) were synthesized using a titanocene catalyst, and their pyrolytic conversion to ceramics was followed using a combination of thermal analysis and infrared spectroscopy. The two polymers have distinctly different backbone structures, as determined by Si NMR; methylsilane polymerizes to a polysilane, while vinylsilane polymers have predominately polycarbosilane backbone, with some polysilane structure as well. The pyrolysis path and char yield were dependent primarily on backbone structure, with little influence of polymer molecular weight. The majority of the weight loss on conversion occurs below 650 degrees C, although bond rearrangement continues to 1400 degrees C. Poly(vinylsilane) produced a C-rich Si-C ceramic in which the carbon was dispersed on a sufficiently fine level to show resistance to oxidation on heating in air to 1400 degrees C.

Hurwitz, Frances I.↗
NASA NTRS1994

A monolithic Si bolometer array for the Caltech Submillimeter Observatory

We are developing a submillimeter continuum camera for the Caltech Submillimeter Observatory (CSO) located on Mauna Kea. The camera will employ a monolithic Si bolometer array which was developed by Moseley et al. at the NASA Goddard Space Flight Center (GSFC). The camera will be cooled to a temperature of about 300 mK in a He-3 cryostat, and will operate primarily at wavelengths of 350 and 450 micrometers. We plan to use a bolometer array with 1x24 directly illuminated pixels, each pixel of dimension 1x2 sq mm, which is about half of the F/4 beam size at these wavelengths. Each pixel is 10 to 12 micrometers thick and is supported only by four thin Si legs formed by wet chemical etch. The pixels are doped n-type by phosphorus implantation, compensated by boron implantation. Signals from the bolometer pixels are first amplified by cryogenically cooled FET's. The signals are further amplified by room-temperature amplifiers and then separately digitized by 16 bit A/D converters with differential inputs. The outputs of the A/D converters are fed into a digital signal processing board via fiber-optic cables. The electronics and data acquisition system were designed by the Goddard group. We will report the status of this effort.

Wang, Ning↗
NASA NTRS1995

Photospheric, circumstellar, and interstellar features of HE, C, N. O, and Si in the HST spectra of four hot white dwarf stars

This paper reports on the observations of four hot white dwarf stars with the spectrographs on the Hubble Space Telescope (HST). The higher resolving power and higher signal/noise, in comparison with IUE, reveals a very rich phenomomenology, including photospheric features from heavy elements, circumstellar features, and the first direct detection of accretion onto the white dwarf component of a binary system. Specific results include the following: Our observations of the ultrahot degenerate H1504+65 confirm that it has a photosphere which is depleted in both H and He, and reveals features of C IV and O VI. The spectrum fits previously published models extremely well. The intermediate-temperature DO star PG 1034+001 has an ultraviolet spectrum showing complex profiles of the well-known resonance doublets of C IV, N v, and Si IV. The O V 1371 line shows a clear separation into a photospheric and a circumstellar component, and it is likely that the same two components can explain the other lines as well. The cooler DA star GD 394 has an extensive system of heavy-element features, but their radial velocity is such that it is highly unlikely that they are formed in the stellar photosphere. Time-resolved spectra of the accreting white dwarf in the V 471 Tau binary system are briefly presented here; they do show the presence of C IV, Si IV, and He II. However, the C IV and He II lines are in emission, rather than in aborption as had been expected.

Shipman, Harry L.↗
NASA NTRS1995

Determination of the electrical conductivity of liquid Ge(0.95)Si(0.05)

We have measured the electrical conductivity of molten germanium-silicon Ge(0.95)Si(0.05) from the liquidus temperature (1050 C) up to 1220 C. The data were acquired with a unique apparatus which utilizes the standard four-probe technique. The basic unit consists of a fused silica enclosure that contains hermetic glass-to-tungsten seals that can support vacuum pressures down to 10(exp -7) Torr. With calibration, the measurement error for the low vapor pressure materials of this study was typically less than 7%. The temperature dependence of the electrical conductivity of a Ge(0.95)Si(0.05) melt was found to vary from approximately 22,300/ohm/cm at the liquidus temperature down to approximately 16,000/ohm/cm at 1220 C. The negative temperature coefficient as well as the magnitude of these data clearly indicate that the molten material is metallic in nature despite the semiconducting properties of the solid.

Rolin, T. D.↗
NASA NTRS1996

The Influence of C and Si on the Flow Behavior of NiAl Single Crystals

Alloys based on the intermetallic compound NiAl are considered potential replacements for Ni and Co-based superalloys in high temperature structural applications due to their excellent oxidation resistance, low densities, high thermal conductivities, and increased melting points. Unfortunately, NiAl exhibits low tensile ductility at room temperature and low strengths at elevated temperatures which have combined to hinder its development. Recent efforts, have revealed that NiAl in the presence of sufficient solute levels, is subject to the phenomenon of strain aging which manifests itself as: sharp yield points, abnormally low strain rate sensitivities (SRS), plateaus or peaks in yield stress and work hardening rate as a function of temperature, flow stress transients upon an upward change in strain rate, reduced tensile elongations at elevated temperatures, and serrated stress-strain curves. Though recent efforts via either alloying or the removal of interstitial impurities, have resulted in consistent room-temperature tensile elongations exceeding 5% and the elimination of serrated flow, the effects of particular substitutional and interstitial elements and the mechanisms by which they might enhance or hinder the mechanical properties remain unknown. Consequently, the purpose of the present paper is to provide a preliminary assessment of the influence of common substitutional and interstitial impurities on the deformation behavior of NiAl. To accomplish this goal a series of NiAl single crystal alloys containing various interstitial solutes were prepared and their mechanical properties were evaluated between 77 and 1100 K. Because Si is a common impurity in conventional purity single crystals grown by the Bridgman method, Si concentrations were also varied in order to determine the influence of this element.

Weaver, M. L.↗
NASA NTRS1997

Charge Transfer Between Ground-State Si(3+) and He at Electron-Volt Energies

The charge-transfer rate coefficient for the reaction Si(3+)(3s(sup 2)S) + He yields products is measured by means of a combined technique of laser ablation and ion storage. A cylindrical radio-frequency ion trap was used to store Si(3+) ions produced by laser ablation of solid silicon targets. The rate coefficient of the reaction was derived from the decay rate of the ion signal. The measured rate coefficient is 6.27(exp +0.68)(sub -0.52) x 10(exp -10)cu cm/s at T(sub equiv) = 3.9 x 10(exp 3)K. This value is about 30% higher than the Landau-Zener calculation of Butler and Dalgarno and is larger by about a factor of 3 than the recent full quantal calculation of Honvault et al.

Fang, Z.↗
NASA NTRS2000

Low Cost Al-Si Casting Alloy As In-Situ Composite for High Temperature Applications

A new aluminum-silicon (Al-Si) alloy has been successfully developed at NASA- Marshall Space Flight Center (MSFC) that has significant improvement in tensile and fatigue strength at elevated temperatures (500 F-700 F). The alloy offers a number of benefits such as light weight, high hardness, low thermal expansion and high surface wear resistance. In hypereutectic form, this alloy is considered as an in-situ Al-Si composite with tensile strength of about 90% higher than the auto industry 390 alloy at 600 F. This composite is very economically produced by using either conventional permanent steel molds or die casting. The projected material cost is less than $0.90 per pound, and automotive components such as pistons can be cast for high production rate using conventional casting techniques with a low and fully accounted cost. Key Words: Metal matrix composites, In-situ composite, aluminum-silicon alloy, hypereutectic alloy, permanent mold casting, die casting.

Lee, Jonathan A.↗
NASA NTRS2000

High-Q X-Band and K-Band Micromachined Spiral Inductors for Use in Si-Based ICs

A micromachined structure with reduced parasitics is proposed to enhance the resonant frequency and the quality factor (Q) of a spiral inductor. Inductors with various etch depths have been fabricated on a high resistivity Si substrate. Two-port S-parameters measurement is taken to characterize the performance of the inductors. With an etch depth of 20 micron, a fabricated 1.8 nH spiral inductor achieves a maximum resonant frequency of 25.6 GHz and a maximum Q of 20.2 at 14.5 GHz. This technology is compatible with SiGe/Si HBT technology, and the spiral inductors are especially suitable for Si-based monolithic microwave integrated circuit (MMIC) applications.

Lu, Liang-Hung↗
NASA NTRS2001

Experimental and Theoretical Investigations of the Solidification of Eutectic Al-Si Alloy

The eutectic alloys have a wide spectrum of applications due to their good castability and physical and mechanical properties. The interphase spacing resulting during solidification is an important microstructural feature that significantly influences the mechanical behavior of the material. Thus, knowledge of the evolution of the interphase spacing during solidification is necessary in order to properly design the solidification process and optimize the material properties. While the growth of regular eutectics is rather well understood, the irregular eutectics such as Al-Si or Fe-graphite exhibit undercoolings and lamellar spacings much larger than those theoretically predicted. Despite of a considerable amount of experimental and theoretical work a clear understanding of the true mechanism underlying the spacing selection in irregular eutectics is yet to be achieved. A new experimental study of the solidification of the eutectic Al-Si alloy will be reported in this paper. The measured interface undercoolings and lamellar spacing will be compared to those found in the literature in order to get more general information regarding the growth mechanism of irregular eutectics. A modification of the present theory of the eutectic growth is also proposed. The results of the modified mathematical model, accounting for a non-isothermal solid/liquid interface, will be compared to the experimental measurements.

Sen, S.↗
NASA NTRS2001

Lamellar Spacing Selection in Al-Si Eutectic System: a Theoretical Investigation

It is well known that irregular eutectics such as Al-Si and Fe-C exhibit larger lamellar spacings and undercoolings compared to the predictions made by the Jackson and Hunt (JH) theory. In this paper, we reexamine the JH theory and relax some of the assumptions used in that treatment. The modified theoretical model has enhanced capabilities to predict the lamellar spacing in both regular and irregular eutectics. For the Al-Si system in particular we identified two different spacing selection mechanisms:a) for a particular growth rate, a nearly isothermal interface can be achieved at a unique minimum spacing lambda(sub I); b) the average spacing in the microstructure (lambda(sub av) greater than lambda(sub I)) is essentially dictated by the undercooling of the faceted phase. Based on the modified theoretical model a semi-empirical expression has been developed to account for the influence of the temperature gradient. Application of a Mullin and Sekerka type stability analysis for eutectics will also be presented and the results compared to the modified JH model. It will be shown that the both theoretical approaches are in good agreement with each other and also with the published experimental measurements.

Catalina, Adrian V.↗
NASA NTRS2002

Wetting Angles and Surface Tension of Ge(1-x)Si(x) Melts on Different Substrate Materials

The wetting angles and the surface tension of Ge(1-x)Si(x) melts (0.02 less than x less than 0.13) have been measured on various substrate materials using the sessile drop technique. Fused quartz, sapphire, SiC, glassy carbon, pBN, AIN, and Si3N4 have been used as substrates. The highest and most stable wetting angles were found for pBN substrates with 164 +/- 8 deg., either under forming gas with an additional carbon getter in the system or under active vacuum. The surface tension measurements resulted in a value of +2.2 x 10(exp -3) N/m.at%Si for the concentration dependence delta(gamma)/(delta)C. For the composition range measured, the temperature dependence (delt)gamma/(delta)T showed values similar to those of pure Ge, on average -0.07 x 10(exp -3) N/mK.

Croell, A.↗
NASA NTRS2002

The Stellar Imager (SI) Mission Concept

The Stellar Imager (SI) is envisioned as a space-based, UV-optical interferometer composed of 10 or more one-meter class elements distributed with a maximum baseline of 0.5 km. It is designed to image stars and binaries with sufficient resolution to enable long-term studies of stellar magnetic activity patterns, for comparison with those on the sun. It will also support asteroseismology (acoustic imaging) to probe stellar internal structure, differential rotation, and large-scale circulations. SI will enable us to understand the various effects of the magnetic fields of stars, the dynamos that generate these fields, and the internal structure and dynamics of the stars. The ultimate goal of the mission is to achieve the best-possible forecasting of solar activity as a driver of climate and space weather on time scales ranging from months up to decades, and an understanding of the impact of stellar magnetic activity on life in the Universe. In this paper we describe the scientific goals of the mission, the performance requirements needed to address these goals, the "enabling technology" development efforts being pursued, and the design concepts now under study for the full mission and a possible pathfinder mission.

Carpenter, Kenneth G.↗
NASA NTRS2002

Single Junction InGaP/GaAs Solar Cells Grown on Si Substrates using SiGe Buffer Layers

Single junction InGaP/GaAs solar cells displaying high efficiency and record high open circuit voltage values have been grown by metalorganic chemical vapor deposition on Ge/graded SiGe/Si substrates. Open circuit voltages as high as 980 mV under AM0 conditions have been verified to result from a single GaAs junction, with no evidence of Ge-related sub-cell photoresponse. Current AM0 efficiencies of close to 16% have been measured for a large number of small area cells, whose performance is limited by non-fundamental current losses due to significant surface reflection resulting from greater than 10% front surface metal coverage and wafer handling during the growth sequence for these prototype cells. It is shown that at the material quality currently achieved for GaAs grown on Ge/SiGe/Si substrates, namely a 10 nanosecond minority carrier lifetime that results from complete elimination of anti-phase domains and maintaining a threading dislocation density of approximately 8 x 10(exp 5) per square centimeter, 19-20% AM0 single junction GaAs cells are imminent. Experiments show that the high performance is not degraded for larger area cells, with identical open circuit voltages and higher short circuit current (due to reduced front metal coverage) values being demonstrated, indicating that large area scaling is possible in the near term. Comparison to a simple model indicates that the voltage output of these GaAs on Si cells follows ideal behavior expected for lattice mismatched devices, demonstrating that unaccounted for defects and issues that have plagued other methods to epitaxially integrate III-V cells with Si are resolved using SiGe buffers and proper GaAs nucleation methods. These early results already show the enormous and realistic potential of the virtual SiGe substrate approach for generating high efficiency, lightweight and strong III-V solar cells.

Ringel, S. A.↗