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At least 235 records · Page 13

Dissociative recombination source for O I /1D/ atoms

A study of the nighttime dissociative recombination production of O(1D) is reported. The data were gathered by a rocket payload carrying an ion mass spectrometer, Langmuir probe, retarding potential analyzer, and 6300-A photometer. The specific recombination rate to produce O(1D) atoms is deduced to be (2.8 + or - 1.0) times 10 to the minus 8th cu cm per sec and is 30% of the total laboratory rate. The quenching rate at 250 km is 0.0044 + or - 0.0015 per sec.

Sharp, W. E.↗

Rotational interpretation of recombination line widths in the galactic nucleus

The widths of the radio recombination lines observed in the direction of the galactic center are interpreted as due to pure rotation. This interpretation leads to a mass estimate for the inner 1.6-pc region of our Galaxy. It is noted that recent observations of M 31 suggest the existence of a distinct dynamic entity at its center - the nucleus. The rotational interpretation of the recombination line widths is shown to be consistent with the existence of a nucleus at the center of our own Galaxy which is similar in nature to the nucleus of M 31.

Kellman, S. A.↗

H2 recombination on interstellar grains

From a consideration of relevant theoretical and experimental data it is concluded that H atoms (but not H2 molecules) will be chemisorbed on interstellar graphite grains, with H2 formation proceeding efficiently for graphite grain temperatures less than 70 K. It is argued that graphite grains will act as the principal sites for H2 formation, with a formation rate of about 4 to the minus 17th cu cm per sec. Heating by H2 molecules formed by surface recombination is analyzed in the context of the available experimental data, and a heating rate is derived and compared with other suggested cloud heating mechanisms. It is concluded that H2 recombination will provide the largest heat source in diffuse clouds if the albedo of interstellar dust in the 912-1200 A region is high (about 0.9), whereas if the albedo in this wavelength region is lower (about 0.5), photoelectron ejection from grains will tend to predominate, and can explain observed cloud temperatures with a carbon depletion factor of approximately 2, a factor attributable to a normal interstellar abundance of graphite grains.

Barlow, M. J.↗

Enhancement of dielectronic recombination by plasma electric microfields

A description is presented of an application of techniques from Stark-broadening theory considered by Griem (1974) to the computation of dielectronic recombination rated for multiply charged Fe ions under the influence of plasma electric microfields. Attention is given to a dielectronic recombination process for which the effects of surrounding charged particles have been found to be important at surprisingly low densities.

Jacobs, V. L.↗

Narrow radio recombination lines from ionization fronts

Model weak D-type ionization fronts are used to show that narrow H I radio recombination lines, such as those observed in the directions of several galactic H II regions, may be formed in the outermost layers of an ionization front bounding an H II region. Four model ionization fronts are computed with different values of magnetic-field strength, ionizing photon energy, and initial conditions. The recombination line strengths given by the models are compared with observed line strengths for the H II region NGC 2024, and the observed line profiles are found to be about twice as broad as the model profiles. Some likely explanations for the discrepancy are considered, particularly a variation in front velocity over the observing beam width (Stark broadening is ruled out).

Hill, J. K.↗

Carrier generation, recombination, trapping, and transport in semiconductors with position-dependent composition

The spatial variation of the chemical composition of a semiconductor modifies the ideal one-electron energy band model as well as the Shockley equations for carrier recombination and transport in two important ways. The random component of the spatial variation introduces localized states in the energy gap by perturbing the band states. The nonrandom component gives rise to the position dependences of the conduction and valence band edges or the electron affinity and the energy gap. This paper gives the modifications of the Shockley equations from these two effects as well as an example of the steady-state recombination rate from distributed gap states in junction solar cells

Sah, C.-T.↗

Effects of defect recombination centers on radiation damage in solar cells

Defect production in silicon is modeled on a computer by solving a large system of rate equations. The model includes the main, known defects that are stable at operating temperatures of solar cells in outer space; most of these defects are secondary and tertiary defects. The preliminary result shows that the presence of defect recombination centers for primary defects (i.e., vacancy and interstitial) can effectively reduce the production rates of those stable defects and, consequentially, improve the lifetime of solar cells operating in radiation environment. The characteristics of the defect recombination center required for better solar cell performance along with prospective candidates are discussed.

Cheng, L. J.↗

Recombination-generation currents in degenerate semiconductors

The classical Shockley-Read-Hall theory of free carrier recombination and generation via traps is extended to degenerate semiconductors. A concise and simple expression is found which avoids completely the concept of a Fermi level, a concept which is alien to nonequilibrium situations. Assumptions made in deriving the recombination generation current are carefully delineated and are found to be basically identical to those made in the original theory applicable to nondegenerate semiconductors.

Von Roos, O.↗

On dielectronic recombination and resonances in excitation cross sections

It is found that the contribution to the dielectronic recombination rate of stabilizing transitions of the outer electron is within the 30% accuracy of the Burgess rates calculated by neglecting this process even for Delta n = 0 transitions for astrophysically important ions. Autoionization to excited levels, ignored in the Burgess procedure and shown by Jacobs et al. (1977) to be important for some ions in the calculation of the dielectronic recombination rate, is discussed with reference to the resonance excitation of some astrophysically important X-ray lines. In particular, the contribution of resonances to the excitation of several lines in the helium and neon isosequences is estimated.

Raymond, J. C.↗

Measurement of dielectronic recombination rates for the iron ions Fe IX-XI

Iron is injected into a well-diagnosed theta-pinch plasma. The intensities of lines from various ionization stages are measured as functions of time and interpreted by means of a time-dependent corona ionization-recombination model. Effective coefficients for dielectronic recombination at electron densities of approximately 3 by 10 to the 16th power per cu cm are equal to or smaller than presently accepted theoretical values for low-density plasmas. Rate coefficients for ionization tend to be smaller than theoretical values.

Brooks, R. L.↗

Auger recombination in heavily doped shallow-emitter silicon p-n-junction solar cells, diodes, and transistors

A rigorous analytic evaluation of an emitter model that includes Auger recombination but excludes bandgap narrowing is presented. It is shown that such a model cannot explain the experimentally observed values of the open-circuit voltage in p-n-junction silicon solar cells. Thus physical mechanisms in addition to Auger recombination are responsible for the experimentally observed values of the open-circuit voltage in silicon solar cells and the common-emitter current gain in bipolar transistors.

Shibib, M. A.↗

Recombination of NO/+/ in the mid-latitude trough and the polar ionization hole

The dissociative recombination of NO(+) with electrons is further examined using a sample of Atmosphere Explorer data from the midlatitude ionization trough. The electron temperature for this data sample covered a range of 2500 K, thus allowing an accurate determination of the temperature dependence of the rate coefficient. The results confirm earlier determinations which were made from a large data base, and the rate coefficient alpha is found to be inversely proportional to the electron temperature. The possibility of a neglected process in the NO(+) chemistry is investigated which, if it were included, might result in a smaller temperature dependence of alpha. Such a source would require a direct dependence on electron temperature. A possible candidate is associative recombination of energetic N(D-2) with O. The results confirm recent measurements which find that this process cannot be significant. The NO(+) chemistry is a very sensitive indicator of chemical equilibrium conditions. By using measurements of the relevant parameters made in the polar ionization hole it is found that horizontal drifts do not appear to be significant in this region.

Torr, M. R.↗

Dissociative recombination of N2/+/ in the ionosphere

N2(+) ion measurements are examined which were made with the Atmospheric Explorer-C satellite during a phase of solar activity in 1978 that was significantly higher than near the earlier minimum. It is found that the major source of N2(+) is photoionization, rather than charge exchange with O(+) (2D), and that the major loss process above 300 km is dissociative recombination with electrons. A data sample for which the electron temperature (T sub e) covered the range from 1000 to 3400 K is used to evaluate the rate constant, alpha, for the dissociative-recombination process. The results show good agreement with laboratory measurements given by the expression: alpha = 1.8 x 10 to the -7th (T sub e/300) to the -0.39th cu cm/sec.

Torr, M. R.↗

Outdiffusion of recombination centers from the substrate into LPE layers - GaAs

Experimental results are presented showing that outdiffusion of recombination centers from the GaAs substrate into the epitaxial layer takes place during growth. Such outdiffusion decreases the carrier lifetime in the epitaxial layer to much lower values than the radiative recombination limit. Furthermore, it introduces a lifetime gradient across the epitaxial layer which depends critically on the growth velocity and thermal treatment. High rates of growth (such as those attainable in electroepitaxy) and high cooling rates can minimize the adverse effects of normally available substrates on the epitaxial layers; however, good quality substrates are essential for the consistent growth of device quality layers.

Jastrzebski, L.↗

The OI/1S/ state - Its quenching by O2 and formation by the dissociative recombination of vibrationally excited O2/+/ ions

The rate coefficient for the quenching of metastable O(1S) atoms by O2 was measured as a function of temperature from 250 to 550 K. The resulting Arrhenius expression correlates well with previous laboratory work. It is suggested that the much larger value of the rate coefficient inferred from an analysis of artificial auroral experiment, Precede, may be explained by overestimation of the contribution of O(1S) production from O2(+) dissociative recombination. The possibility that O(1S) atoms are produced only by the dissociative recombination of vibrationally excited O2(+) ions is examined; such excited ions would not exist in the Precede experiment because of the rapid cooling of the ions by resonant charge transfer processes.

Zipf, E. C.↗

Determination of lifetimes and recombination currents in p-n junction solar cells, diodes, and transistors

New methods are presented and illustrated that enable the accurate determination of the diffusion length of minority carriers in the narrow regions of a solar cell or a diode. Other methods now available are inaccurate for the desired case in which the width of the region is less than the diffusion length. Once the diffusion length is determined by the new methods, this result can be combined with measured dark I-V characteristics and with small-signal admittance characteristics to enable determination of the recombination currents in each quasi-neutral region of the cell - for example, in the emitter, low-doped base, and high-doped base regions of the BSF (back-surface-field) cell. This approach leads to values for the effective surface recombination velocity of the high-low junction forming the back-surface field of BSF cells or the high-low emitter junction of HLE cells. These methods are also applicable for measuring the minority-carrier lifetime in thin epitaxial layers grown on substrates with opposite conductivity type.

Neugroschel, A.↗

Deep-level defects and recombination parameters in proton irradiated AlGaAs-GaAs solar cells

The deep-level defects produced in high efficiency AlGaAs-GaAs solar cells by proton energies of 50, 100, 200, and 290 keV are investigated. Proton fluences were from 10 to the 10th to 10 to the 13th p/sq cm. The results show that the diode ideality factor varies between 1.9 and 2.1, indicating that the dominant current component is due to the recombination of electron-hole pairs via deep-level traps in the junction space charge region of these diodes. The recombination current increases with increasing proton fluence and proton energy. The reduction of open circuit voltage, short circuit current, and conversion efficiency in the irradiated cells relates directly to the density of the deep-level defects induced by proton irradiation.

Li, S. S.↗

Electron-temperature dependence of dissociative recombination of electrons with CO/+/./CO/n-series ions

The dependence on electron temperature of the coefficients for electron recombination with molecular cluster ions of the carbon monoxide series, CO(+).(CO)n, is determined. A microwave discharge lasting approximately 0.1 msec was applied in 5-20 Torr neon containing a few tenths percent CO in an afterglow mass spectrometer apparatus, and the time histories of the various afterglow ions were measured. Expressions for the dependence of the recombination coefficients of the dimer and trimer ions CO(+).CO and CO(+).(CO)2 are obtained which are found to be significantly different from those previously obtained for hydronium and ammonium series polar cluster ions, but similar to those of simple diatomic ions.

Whitaker, M.↗