Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Read Only Memory”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Reducing Memory Consumption in Calico with Shared Memory

This document details the work to reduce memory consumption in Calico. Calico is SimTools’ Constructive Solid Geometry (CSG) and geometry painting library. It is primarily used to paint material volume fractions in the Eulerian meshes of the physics codes. Calico provides point-in-body checks for the geometry supplied by an Oso model, which are then aggregated by the host codes. In addition, Calico can be used to build Oso models and is used by Ingen for that purpose. Oso models, and thus Calico, provide support for various CSG primitives such as spheres, cylinders, surfaces generated by rotating tabular curve data, and STL files as well as binary combinations of those primitives. Prior to refactoring Calico will run out of memory on CTS-1 machines when 36 MPI ranks are used per node when reading STL models on the order of 1.5 GB. This limitation is a bottleneck in designer workflow. This problem has been alleviated through the use of data structures to both reduce memory consumption and to leverage MPI-3 shared memory. This report details the data structures targeted for refactoring in Calico, the methods and implementation details for reducing memory consumption and leveraging shared memory, and results for one test problem. Results show a memory reduction when loading a 1 GB STL file by a factor of 27.5, from 93.4 to 3.4 GB.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS2008

High-Density, High-Bandwidth, Multilevel Holographic Memory

A proposed holographic memory system would be capable of storing data at unprecedentedly high density, and its data transfer performance in both reading and writing would be characterized by exceptionally high bandwidth. The capabilities of the proposed system would greatly exceed even those of a state-of-the art memory system, based on binary holograms (in which each pixel value represents 0 or 1), that can hold .1 terabyte of data and can support a reading or writing rate as high as 1 Gb/s. The storage capacity of the state-of-theart system cannot be increased without also increasing the volume and mass of the system. However, in principle, the storage capacity could be increased greatly, without significantly increasing the volume and mass, if multilevel holograms were used instead of binary holograms. For example, a 3-bit (8-level) hologram could store 8 terabytes, or an 8-bit (256-level) hologram could store 256 terabytes, in a system having little or no more size and mass than does the state-of-the-art 1-terabyte binary holographic memory. The proposed system would utilize multilevel holograms. The system would include lasers, imaging lenses and other beam-forming optics, a block photorefractive crystal wherein the holograms would be formed, and two multilevel spatial light modulators in the form of commercially available deformable-mirror-device spatial light modulators (DMDSLMs) made for use in high speed input conversion of data up to 12 bits. For readout, the system would also include two arrays of complementary metal oxide/semiconductor (CMOS) photodetectors matching the spatial light modulators. The system would further include a reference-beam sterring device (equivalent of a scanning mirror), containing no sliding parts, that could be either a liquid-crystal phased-array device or a microscopic mirror actuated by a high-speed microelectromechanical system. Time-multiplexing and the multilevel nature of the DMDSLM would be exploited to enable writing and reading of multilevel holograms. The DMDSLM would also enable transfer of data at a rate of 7.6 Gb/s or perhaps somewhat higher.

Chao, Tien-Hsin↗
DOE OSTI2025

Unconventional unidirectional magnetoresistance in heterostructures of a topological semimetal and a ferromagnet

Unidirectional magnetoresistance (UMR) in a bilayer heterostructure, consisting of a spin-source material and a magnetic layer, refers to a change in the longitudinal resistance on the reversal of magnetization and originates from the interaction of non-equilibrium spin accumulation and magnetization at the interface. Since the spin polarization of an electric-field-induced non-equilibrium spin accumulation in conventional spin-source materials is restricted to be in the film plane, the ensuing UMR can only respond to the in-plane component of magnetization. However, magnets with perpendicular magnetic anisotropy are highly desired for magnetic memory and spin-logic devices, whereas the electrical read-out of perpendicular magnetic anisotropy magnets through UMR is critically missing. Here, in this study, we report the discovery of an unconventional UMR in the heterostructures of a topological semimetal (WTe 2 ) and a perpendicular magnetic anisotropy ferromagnetic insulator (Cr 2 Ge 2 Te 6 ), which allows to electrically read the up and down magnetic states of the Cr 2 Ge 2 Te 6 layer through longitudinal resistance measurements.

Kao, I-Hsuan [Carnegie Mellon Univ., Pittsburgh, P↗
NASA NTRS1989

The MHOST finite element program: 3-D inelastic analysis methods for hot section components. Volume 3: Systems' manual

The internal structure is discussed of the MHOST finite element program designed for 3-D inelastic analysis of gas turbine hot section components. The computer code is the first implementation of the mixed iterative solution strategy for improved efficiency and accuracy over the conventional finite element method. The control structure of the program is covered along with the data storage scheme and the memory allocation procedure and the file handling facilities including the read and/or write sequences.

Nakazawa, Shohei↗
NASA NTRS1999

Multiplexed Holographic Data Storage in Bacteriorhodopsin

Biochrome photosensitive films in particular Bacteriorhodopsin exhibit features which make these materials an attractive recording medium for optical data storage and processing. Bacteriorhodopsin films find numerous applications in a wide range of optical data processing applications; however the short-term memory characteristics of BR limits their applications for holographic data storage. The life-time of the BR can be extended using cryogenic temperatures [1], although this method makes the system overly complicated and unstable. Longer life-times can be provided in one modification of BR - the "blue" membrane BR [2], however currently available films are characterized by both low diffraction efficiency and difficulties in providing photoreversible recording. In addition, as a dynamic recording material, the BR requires different wavelengths for recording and reconstructing of optical data in order to prevent the information erasure during its readout. This fact also put constraints on a BR-based Optical Memory, due to information loss in holographic memory systems employing the two-lambda technique for reading-writing thick multiplexed holograms.

Mehrl, David J.↗
NASA NTRS1984

Method and apparatus for pulse width modulation control of an AC induction motor

An inverter is connected between a source of DC power and a three-phase AC induction motor, and a micro-processor-based circuit controls the inverter using pulse width modulation techniques. In the disclosed method of pulse width modulation, both edges of each pulse of a carrier pulse train are equally modulated by a time proportional to sin .THETA., where .THETA. is the angular displacement of the pulse center at the motor stator frequency from a fixed reference point on the carrier waveform. The carrier waveform frequency is a multiple of the motor stator frequency. The modulated pulse train is then applied to each of the motor phase inputs with respective phase shifts of 120.degree. at the stator frequency. Switching control commands of electronic switches in the inverter are stored in a random access memory (RAM) and the locations of the RAM are successively read out in a cyclic manner, each bit of a given RAM location controlling a respective phase input of the motor. The DC power source preferably comprises rechargeable batteries and all but one of the electronic switches in the inverter can be disabled, the remaining electronic switch being part of a flyback DC-DC converter circuit for recharging the battery.

Geppert, Steven↗
NASA NTRS1985

Pulse width modulation inverter with battery charger

An inverter is connected between a source of DC power and a three-phase AC induction motor, and a microprocessor-based circuit controls the inverter using pulse width modulation techniques. In the disclosed method of pulse width modulation, both edges of each pulse of a carrier pulse train are equally modulated by a time proportional to sin .theta., where .theta. is the angular displacement of the pulse center at the motor stator frequency from a fixed reference point on the carrier waveform. The carrier waveform frequency is a multiple of the motor stator frequency. The modulated pulse train is then applied to each of the motor phase inputs with respective phase shifts of 120.degree. at the stator frequency. Switching control commands for electronic switches in the inverter are stored in a random access memory (RAM) and the locations of the RAM are successively read out in a cyclic manner, each bit of a given RAM location controlling a respective phase input of the motor. The DC power source preferably comprises rechargeable batteries and all but one of the electronic switches in the inverter can be disabled, the remaining electronic switch being part of a flyback DC-DC converter circuit for recharging the battery.

Slicker, James M.↗
NASA NTRS2010

SONOS Nonvolatile Memory Cell Programming Characteristics

Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory is gaining favor over conventional EEPROM FLASH memory technology. This paper characterizes the SONOS write operation using a nonquasi-static MOSFET model. This includes floating gate charge and voltage characteristics as well as tunneling current, voltage threshold and drain current characterization. The characterization of the SONOS memory cell predicted by the model closely agrees with experimental data obtained from actual SONOS memory cells. The tunnel current, drain current, threshold voltage and read drain current all closely agreed with empirical data.

MacLeod, Todd C.↗
DOE OSTI2025

Towards Scalable 3D Integration of 2T-nC FeRAM with Hundreds of Layer Stacking

In this article, we study the limits of the number of capacitors and read history dependence in a 2T-nC ferroelectric random-access memory (FeRAM) cell, paving the way for its high-density integration toward hundreds of stacked layers. Through a comprehensive experimental and simulation study on the scaling behavior of the 2T-nC FeRAM architecture, we demonstrate: (i) successful fabrication of 2T-64C cells with robust memory operation and clearly distinguishable ‘0’ and ‘1’ states, even in 64- capacitor configurations; (ii) that the parasitic capacitance of the floating node originates predominantly from the linear component of the ferroelectric capacitor, and its impact on n-scaling—due to degraded sense margin—can be mitigated by floating unselected capacitors with enough TΩ isolation; (iii) that sharing write and read transistors among n capacitors introduces a read history dependence issue due to fluctuating floating node voltage (VFN); and (iv) that a proposed FN discharge scheme can effectively eliminate read-sequence dependence, at the cost of reduced read endurance.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Antiferromagnetic memory storage devices from magnetic transition metal dichalcogenides

Switchable antiferromagnetic (AFM) memory devices are provided based on magnetically intercalated transition metal dichalcogenides (TMDs) of the form AxMC2, where A is a magnetic element of stoichiometry x between 0 and 1, M is a transition metal of stoichiometry 1, and C is a chalcogen of stoichiometry 2. Memory storage is achieved by fabricating these materials into crosses of two or more bars and driving DC current pulses along the bars to rotate the AFM order to a fixed angle with respect to the current pulse. Application of current pulses along different bars can switch the AFM order between multiple directions. Standard resistance measurements can detect the orientation of the AFM order as high or low resistance states. The state of the device can be set by the input current pulses, and read-out by the resistance measurement, forming a non-volatile, AFM memory storage bit.

Analytis, James G.↗
DOE OSTI2023

Wave Measurements taken NW of Culebra Is., PR, 2023

Wave and sea surface temperature measurements collected by a Sofar Spotter buoy in 2023. The buoy was deployed on July 27, 2023 at 11:30 UTC northwest of Culebra Island, Puerto Rico, (18.3878 N, 65.3899 W) and recovered on Nov 5, 2023 at 12:45 UTC. Data are saved here in netCDF format, organized by month, and include directional wave statistics, GPS, and SST measurements at 30-minute intervals. Figures produced from these data are provided here as well. They include timeseries of wave height/period/direction and SST, GPS location, wave roses, and directional spectra. Additionally, raw CSV files from the Spotter's memory card can also be found below. NetCDF files can be read in python using the netCDF4 or Xarray packages, or through MATLAB using the "ncread()" command.

16 TIDAL AND WAVE POWER↗
DOE OSTI2025

Multistate resistance in TaN/(Hf,Zr)O 2 /Ta ferroelectric tunnel junctions

Ferroelectric tunnel junctions (FTJs) utilizing hafnium zirconium oxide (HZO) have emerged as promising non-volatile memory elements for microelectronics, compatible with back end of line (BEOL) complementary–metal–oxide semiconductor fabrication. This study investigates asymmetric electrode TaN/HZO/Ta devices with a 6 nm thick HZO layer as FTJs for multistate resistive memory applications. The individual FTJs exhibit a resistance ratio exceeding 10× when utilized as a binary state device, with pulsing between −1.7 and +1.4 V to set the high resistance state (HRS) and low resistance state (LRS), respectively. Following with reduced write voltage pulses allows the ferroelectric device to operate with a selection of over 32 distinct resistance states (2 5 bits) between the LRS and HRS. This work then explores the stability of the resistance states during write/read pulse cycling, along with the stability of the state after multiple read pulses. Accessing the multibit state shows stability within 50 reads with the binary state remaining stable for more than 4000 reads pulses. With their multistate tunability and versatility, FTJs hold promise as BEOL memory elements for compute-in-memory (CiM) arrays, binary digital memory, or weighted vector matrix multiplication applications with low power consumption during computations.

CMOS↗
DOE OSTI2026

CMS Storage Performance with RNTuple

CMS is transitioning to use ROOT’s new RNTuple data storage format for the files CMS will write in the HL-LHC era. Based on initial tests, CMS expects faster I/O and smaller files compared to the present TTree storage format. This contribution will show a comprehensive performance comparison between RNTuple and TTree I/O using CMS AOD and MiniAOD data formats as test cases for both simulation and collision data corresponding to similar data taking conditions of LHC Run 3. Quantities such as the resulting file size, the memory usage of the I/O components, and the rate of events being read from a file or written to a file will be measured. CMS’ data processing relies heavily on reading files over the local or wide area networks. The file read patterns are important because the latencies have been seen to influence the total production job times. Therefore a study on the file read patterns will be conducted by recording traces of the offset, size, and timestamp of each read request for both RNTuple and TTree. The behavior of network reads will be mimicked by reading local files where artificial latency will be added to the read requests. The effect of different latency values on the job times will be studied.

Jones, Christopher D. [Fermilab]↗
NASA NTRS1967

A high-density magneto-optic memory.

Magneto-optic memory element based on properties of ferrimagnetic garnet with compensation temperature, discussing reading optimization and laser beams intensity

Goldberg, N.↗
NASA NTRS1974

Unique properties of SBN and their use in a layered optical memory

Holographic storage experiments using crystal Sr(0.75)Ba(0.25)Nb2O6 (SBN 75/25) as a volume-phase holographic medium show that this material is the most sensitive crystalline storage medium yet discovered. An exposure level of 0.003 J/sq cm at 0.488 micron produces a 1% diffraction efficiency in a 5-mm length of crystal. In addition to high recording sensitivity, SBN 75/25 exhibits interesting electric-field induced effects that include electric-field enhanced recording sensitivity and voltage-switchable latent-to-active holographic reconstruction efficiency. These effects are explained in terms of drift and diffusion of photoionized carriers coupled with the nonlinear electrooptic behavior characteristic of this low Curie temperature ferroelectric crystal. A mechanism is proposed that correlates the observed electrically controlled holographic response with the dielectric behavior of the crystal. These interesting effects are used to implement a novel, layered optical memory having no moving parts and having electrical access for writing or reading selected layers.

Thaxter, J. B.↗
NASA NTRS1988

Merging Digital Data With A Video Signal

Data displayed on television image of experiment. Video images of experiment sent with digital data on experiment to remote station. Digital data raw and unformatted or in form of characters. For minimal power consumption, interface circuit built of CMOS and HMOS integrated-circuit chips. Buffer/decoder circuit enables experiment computer to communicate with board without excessive loading of computer bus by board. Memory multiplexer/memory array implements buffer-swapping scheme as one buffer is read, other filled with new data.

Collins, Thomas J., III↗
NASA NTRS2010

Adapting ASPEN for Orbital Express

By studying the Orbital Express mission, modeling the spacecraft and scenarios, and testing the system, a technique has been developed that uses recursive decomposition to represent procedural actions declaratively, schema-level uncertainty reasoning to make uncertainty reasoning tractable, and lightweight, natural language processing to automatically parse procedures to produce declarative models. Schema-level uncertainty reasoning has, at its core, the basic assumption that certain variables are uncertain, but not independent. Once any are known, then the others become known. This is important where a variable is uncertain for an action and many actions of the same type exist in the plan. For example, if the number of retries to purge pump lines was unknown (but bounded), and each attempt required a sub-plan, then, once the correct number of attempts required for a purge was known, it would likely be the same for all subsequent purges. This greatly reduces the space of plans that needs to be searched to ensure that all executions are feasible. To accommodate changing scenario procedures, each is ingested into a tabular format in temporal order, and a simple natural-language parser is used to read each step and to derive the impact of that step on memory, power, and communications. Then an ASPEN (Activity Scheduling and Planning Environment) model is produced based on this analysis. The model is tested and further changed by hand, if necessary, to reflect the actual procedure. This results in a great savings of time used for modeling procedures. Many processes that need to be modeled in ASPEN (a declarative system) are, in fact, procedural. ASPEN includes the ability to model activities in a hierarchical fashion, but this representation breaks down if there is a practically unbounded number of sub-activities and decomposition topologies. However, if recursive decomposition is allowed, HTN-like encodings are enabled to represent most procedural phenomena. For example, if a switch requires a variable (but known at the time of the attempt) number of attempts to switch on, one can recurse on the number of remaining switch attempts and decompose into either the same switching activity with one less required attempt, or not decompose at all (or decompose into a dummy task), resulting in the end of the decomposition. In fact, any bounded procedural behavior can be modeled using recursive decompositions assuming that the variables impinging the disjunctive decomposition decision are computable at the time that the decision is made. This enables one to represent tasks that are controlled outside of the scheduler, but that the scheduler must accommodate, without requiring one to give a declarative model of the procedural behavior.

Chouinard, Caroline↗