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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Self-organization of a periodic structure between amorphous and crystalline phases in a GeTe thin film induced by femtosecond laser pulse amorphization

A self-organized fringe pattern in a single amorphous mark of a GeTe thin film was formed by multiple femtosecond pulse amorphization. Micro Raman measurement indicates that the fringe is a periodic alternation between crystalline and amorphous phases. The period of the fringe is smaller than the irradiation wavelength and the direction is parallel to the polarization direction. Snapshot observation revealed that the fringe pattern manifests itself via a complex but coherent process, which is attributed to crystallization properties unique to a nonthermally amorphized phase and the distinct optical contrast between crystalline and amorphous phases.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Octahedral distortion induced magnetic anomalies in LaMn{sub 0.5}Co{sub 0.5}O{sub 3} single crystals

Single crystals of LaMn{sub 0.5}Co{sub 0.5}O{sub 3} belonging to the ferromagnetic-insulator and distorted perovskite class were grown using a four-mirror optical float zone furnace. The as-grown crystal crystallizes into an orthorhombic Pbnm structure. The spatially resolved 2D Raman scan reveals a strain-induced distribution of transition metal (TM)–oxygen (O) octahedral deformation in the as-grown crystal. A rigorous annealing process releases the strain, thereby generating homogeneous octahedral distortion. The octahedra tilt by reducing the bond angle TM-O-TM, resulting in a decline of the exchange energy in the annealed crystal. The critical behavior is investigated from the bulk magnetization. It is found that the ground state magnetic behavior assigned to the strain-free LaMn{sub 0.5}Co{sub 0.5}O{sub 3} crystal is of the 3D Heisenberg kind. Strain induces mean field-like interaction in some sites, and consequently, the critical exponents deviate from the 3D Heisenberg class in the as-grown crystal. The temperature-dependent Raman scattering study reveals strong spin-phonon coupling and the existence of two magnetic ground states in the same crystal.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

“Rings of saturn-like” nanoarrays with high number density of hot spots for surface-enhanced Raman scattering

The Ag nanoparticles (NPs) surrounding triangular nanoarrays (TNAs) with high number density of surface-enhanced Raman scattering (SERS) hot spots (SERS hot spots ring) are prepared by a combination of NPs deposition and subsequent colloid lithography processing. Owing to the SERS hot spots ring, the Ag NPs surrounding TNAs have been proved an excellent candidate for ultrasensitive molecular sensing for their high SERS signal enhancing capacity in experiments and theories. The Ag NPs surrounding TNAs can be readily used for the quick detection of low concentrations of molecules related to food safety; herein, detection of melamine is discussed.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Domain switching by electron beam irradiation of Z{sup +}-polar surface in Mg-doped lithium niobate

The appearance of the static domains with depth above 200 μm in the bulk of MgO-doped lithium niobate single crystals as a result of focused electron beam irradiation of Z{sup +}-polar surface was demonstrated. The created domain patterns were visualized by high-resolution methods including piezoresponse force microscopy, scanning electron microscopy, and confocal Raman microscopy. The main stages of the domain structure formation were revealed and explained in terms of the original model.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Probing channel temperature profiles in Al{sub x}Ga{sub 1−x}N/GaN high electron mobility transistors on 200 mm diameter Si(111) by optical spectroscopy

Using micro-Raman and photoluminescence (PL) techniques, the channel temperature profile is probed in Al{sub x}Ga{sub 1-x}N/GaN high electron mobility transistors (HEMTs) fabricated on a 200 mm diameter Si(111) substrate. In particular, RuO{sub x}-based gate is used due to the semitransparent nature to the optical excitation wavelengths, thus allowing much accurate thermal investigations underneath the gate. To determine the channel temperature profile in devices subjected to different electrical bias voltages, the GaN band-edge PL peak shift calibration with respect to temperature is used. PL analyses show a maximum channel temperature up to 435 K underneath the gate edge between gate and drain, where the estimated thermal resistance in such a HEMT structure is about 13.7 KmmW{sup −1} at a power dissipation of ∼10 W/mm. The temperature profiles from micro-Raman measurements are also addressed from the E{sub 2}-high optical phonon peak shift of GaN, and this method also probes the temperature-induced peak shifts of optical phonon from Si thus showing the nature of thermal characteristics at the AlN/Si substrate interface.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Scalable synthesis of layer-controlled WS{sub 2} and MoS{sub 2} sheets by sulfurization of thin metal films

Transition metal dichalcogenides (TMDs) have emerged as exciting 2D materials beyond graphene due to their promising applications in the field of electronics and optoelectronics. Hence, the ability to produce controllable and uniformly thick TMD sheets over a large area is of utmost important for large-scale applications. Here, a facile method of synthesizing large-area, layer-controlled WS{sub 2}, and MoS{sub 2} sheets by sulfurization of their corresponding thin metal films is reported. A metal film, which is deposited by magnetron sputtering method, can be adjusted to produce, with great control, the desired sheet thickness down to a monolayer. Various characterization techniques, such as Raman, photoluminescence, and transmission electron microscopy, were used to evaluate the grown films. The results confirmed some of the exotic properties of TMDs such as the thickness dependent band-gap transition (indirect to direct band gap) and Raman shift. Devices made directly on the as-grown film showed modest mobility, ranging from 0.005 to 0.01 cm{sup 2} V{sup −1}s{sup −1}. Our synthesis method is simple and could also be used to synthesize other TMDs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Photo-induced oxidation and amorphization of trigonal tellurium: A means to engineer hybrid nanostructures and explore glass structure under spatial confinement

Controlled photo-induced oxidation and amorphization of elemental trigonal tellurium are achieved by laser irradiation at optical wavelengths. These processes are monitored in situ by time-resolved Raman scattering and ex situ by electron microscopies. Ultrathin TeO₂ films form on Te surfaces, as a result of irradiation, with an interface layer of amorphous Te intervening between them. It is shown that irradiation, apart from enabling the controllable transformation of bulk Te to one-dimensional nanostructures, such as Te nanotubes and hybrid core-Te/sheath-TeO₂ nanowires, causes also a series of light-driven (athermal) phase transitions involving the crystallization of the amorphous TeO₂ layers and its transformation to a multiplicity of crystalline phases including the γ-, β-, and α-TeO₂ crystalline phases. The kinetics of the above photo-induced processes is investigated by Raman scattering at various laser fluences revealing exponential and non-exponential kinetics at low and high fluence, respectively. In addition, the formation of ultrathin (less than 10 nm) layers of amorphous TeO₂ offers the possibility to explore structural transitions in 2D glasses by observing changes in the short- and medium-range structural order induced by spatial confinement.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Raman scattering of rare earth sesquioxide Ho₂O₃: A pressure and temperature dependent study

Pressure and temperature dependent Raman scattering studies on Ho₂O₃ have been carried out to investigate the structural transition and the anharmonic behavior of the phonons. Ho₂O₃ undergoes a transition from cubic to monoclinic phase above 15.5 GPa, which is partially reversible on decompression. The anharmonic behavior of the phonon modes of Ho₂O₃ from 80 K to 440 K has been investigated. We find an anomalous line-width change with temperature. The mode Grüneisen parameter of bulk Ho₂O₃ was estimated from high pressure Raman investigation up to 29 GPa. Furthermore, the anharmonic components were calculated from the temperature dependent Raman scattering.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Spectroscopic enhancement in nanoparticles embedded glasses

This presentation provides an overview of the recent progress in the enhancement of the spectroscopic characteristics of the glass embedded with nanoparticles (NPs). Some of our research activities with few significantly new results are highlighted and facilely analyzed. The science and technology dealing with the manipulation of the physical properties of rare earth doped inorganic glasses by embedding metallic NPs or nanoclusters produce the so-called 'nanoglass'. Meanwhile, the spectroscopic enhancement relates the intensity of the luminescence measured at certain transition. The enhancement which expectedly due to the 'plasmonics wave' (referring to the coherent coupling of photons to free electron oscillations called plasmon) occurs at the interface between a conductor and a dielectric. Plasmonics being an emerging concept in advanced optical material of nanophotonics has given this material the ability to exploit the optical response at nanoscale and opened up a new avenue in metal-based glass optics. There is a vast array of plasmonic NPs concepts yet to be explored, with applications spanning solar cells, (bio) sensing, communications, lasers, solid-state lighting, waveguides, imaging, optical data transfer, display and even bio-medicine. Localized surface plasmon resonance (LSPR) can enhance the optical response of nanoglass by orders of magnitude as observed. The luminescence enhancement and surface enhanced Raman scattering (SERS) are new paradigm of research. The enhancement of luminescence due to the influence of metallic NPs is the recurring theme of this paper.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical measurements, a gradual decrease of two-dimensional electron gas (2DEG) concentration near heterointerface as the function of NL thickness is observed possibly due to the reduction in difference of piezoelectric polarization charge densities between AlGaN and GaN layers. It also indicates that the minimum tensile stress and a relatively less total dislocation density for high pressure grown NL can ensure a 20 % increment in mobility at room temperature irrespective of the interface roughness. The thickness and pressure variations in NL and the subsequent changes in growth mode of AlN contributing to the post growth residual tensile stress are investigated using X-ray diffraction and Raman scattering experiments, respectively. The post growth intrinsic residual stress in top layers of heterostructures arises from lattice mismatches, NL parameters and defect densities in GaN. Hence, efforts to reduce the intrinsic residual stress in current conducting GaN layer give an opportunity to further improve the electrical characteristics of AlGaN/GaN device structures on Si.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Comparison of fluctuating potentials and donor-acceptor pair transitions in a Cu-poor Cu{sub 2}ZnSnS{sub 4} based solar cell

The structure of the electronic energy levels of a single phase Cu{sub 2}ZnSnS{sub 4} film, as confirmed by Raman Scattering and x-ray diffraction, is investigated through a dependence on the excitation power of the photoluminescence (PL). The behavior of the observed asymmetric band, with a peak energy at ∼1.22 eV, is compared with two theoretical models: (i) fluctuating potentials and (ii) donor-acceptor pair transitions. It is shown that the radiative recombination channels in the Cu-poor film are strongly influenced by tail states in the bandgap as a consequence of a heavy doping and compensation levels. The contribution of the PL for the evaluation of secondary phases is also highlighted.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

A novel micro-Raman technique to detect and characterize 4H-SiC stacking faults

A novel Micro-Raman technique was designed and used to detect extended defects in 4H-SiC homoepitaxy. The technique uses above band-gap high-power laser densities to induce a local increase of free carriers in undoped epitaxies (n < 10{sup 16} at/cm{sup −3}), creating an electronic plasma that couples with the longitudinal optical (LO) Raman mode. The Raman shift of the LO phonon-plasmon-coupled mode (LOPC) increases as the free carrier density increases. Crystallographic defects lead to scattering or recombination of the free carriers which results in a loss of coupling with the LOPC, and in a reduction of the Raman shift. Given that the LO phonon-plasmon coupling is obtained thanks to the free carriers generated by the high injection level induced by the laser, we named this technique induced-LOPC (i-LOPC). This technique allows the simultaneous determination of both the carrier lifetime and carrier mobility. Taking advantage of the modifications on the carrier lifetime induced by extended defects, we were able to determine the spatial morphology of stacking faults; the obtained morphologies were found to be in excellent agreement with those provided by standard photoluminescence techniques. The results show that the detection of defects via i-LOPC spectroscopy is totally independent from the stacking fault photoluminescence signals that cover a large energy range up to 0.7 eV, thus allowing for a single-scan simultaneous determination of any kind of stacking fault. Combining the i-LOPC method with the analysis of the transverse optical mode, the micro-Raman characterization can determine the most important properties of unintentionally doped film, including the stress status of the wafer, lattice impurities (point defects, polytype inclusions) and a detailed analysis of crystallographic defects, with a high spectral and spatial resolution.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Phase transformations in multiferroic Bi{sub 1−x}La{sub x}Fe{sub 1−y}Ti{sub y}O{sub 3} ceramics probed by temperature dependent Raman scattering

Optical phonons and phase transitions of Bi{sub 1−x}La{sub x}Fe{sub 1−y}Ti{sub y}O{sub 3} (BLFTO, 0.02 ≤ x ≤ 0.12, 0.01 ≤ y ≤ 0.08) ceramics have been investigated by Raman scattering in the temperature range from 80 to 680 K. Four phase transitions around 140, 205, 570, and 640 K can be observed. The Raman modes are sensitive to the spin reorientation around 140 and 205 K, owing to the strong magnon-phonon coupling. The transformation around 570 K is a structural transition from rhombohedral to orthorhombic phase due to an external pressure induced by the chemical substitution. The anomalies of the phonon frequencies near Néel temperature T{sub N} have been discussed in the light of the multiferroicity. Moreover, it was found that the structural transition temperature and T{sub N} of BLFTO ceramics decrease towards room temperature with increasing doping composition as a result of size mismatch between substitution and host cations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Enhanced Raman scattering assisted by ultrahigh order modes of the double metal cladding waveguide

Distinguished from the usual strategy to enhance the Raman scattering such as creating hot spots in the surface-enhanced Raman scattering, this paper takes a quite different approach based on the double metal cladding waveguide. The target analyte is located in the guiding layer of sub-millimeter scale, where several ultrahigh order modes with high intensity are simultaneously excited via a focused laser beam. The experimental setup is simple, and both simulation and experimental results confirm the enhancement mechanism of these oscillating modes. Other appealing features include the large detection area and the ability to excite guided modes via both polarizations. This scheme can be applied to large molecules detection and readily integrated with other Raman enhancement techniques.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Size-tunable strain engineering in Ge nanocrystals embedded within SiO{sub 2} and Si{sub 3}N{sub 4}

We report a unique ability to control the sign and size of the stress within Ge nanocrystals or nanodots fabricated using a complementary metal-oxide-semiconductor-compatible process within SiO{sub 2} and Si{sub 3}N{sub 4} layers. Very large (as much as 4.5%), size-dependent compressive and tensile strains can be generated depending on whether the dot is embedded within either a Si{sub 3}N{sub 4} or a SiO{sub 2} layer. Raman measurements reveal significant anharmonicity for smaller Ge dots and possible distortions of the diamond cubic lattice as evidenced by the measured Grünesien parameters and confirmed by their transmission electron diffraction patterns. Two completely different mechanisms are proposed to explain the formation of the tensile and compressive strain states, respectively.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Composition dependent lattice dynamics in MoS{sub x}Se{sub (2–x)} alloys

We report on room temperature, polarization-resolved Raman scattering measurements on layered crystals of the series MoS{sub x}Se{sub (2–x)} (0 ≤ x ≤ 2) grown by chemical vapor transport technique. The results reveal two distinct sets of features related to the E{sub 2g}{sup 1} and A{sub 1g} modes of pure members of series. As composition x changes, the in-plane E{sub 2g}{sup 1} mode shows two-mode behavior, whereas the out-of-plane A{sub 1g} mode presents more complex evolution. The MoSe{sub 2}-like branch reveals the splitting associated with the altering arrangement of S and Se atoms around Mo and the resulting changes in the dipole moment of the molecule. The X-ray diffraction measurements confirm that the samples are single-phase materials of 2H-type structure over the entire range of the sulfide composition x, while the scanning transmission electron microscopy imaging reveals a random arrangement of the S and Se atoms. Modified random-element-isodisplacement model is adopted to predict the behavior of the individual modes in the alloys. The model successfully confirms the two-mode behavior exhibited by the MoS{sub x}Se{sub (2–x)} series.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Envelope matching for enhanced backward Raman amplification by using self-ionizing plasmas

Backward Raman amplification (BRA) in plasmas has been promoted as a means for generating ultrapowerful laser pulses. For the purpose of achieving the maximum intensities over the shortest distances, an envelope matching between the seed pulse and the amplification gain is required, i.e., the seed pulse propagates at the same velocity with the gain such that the peak of the seed pulse can always enjoy the maximum gain. However, such an envelope matching is absent in traditional BRA because in the latter the amplification gain propagates at superluminous velocity while the seed pulse propagates at the group velocity, which is less than the speed of light. It is shown here that, by using self-ionizing plasmas, the speed of the amplification gain can be well reduced to reach the envelope matching regime. This results in a favorable BRA process, in which higher saturated intensity, shorter interaction length and higher energy-transfer efficiency are achieved.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Electric field enhancement in a self-assembled 2D array of silver nanospheres

We investigate the plasmonic properties of a self-assembled 2D array of Ag nanospheres (average particle diameter/inter-particle separation distance of 9/3.7 nm). The structures of the individual particles and their assemblies are characterized using high-resolution transmission electron microscopy (HR-TEM). The plasmonic response of the nanoparticle network is probed using two-photon photoemission electron microscopy (TP-PEEM). HR-TEM and TP-PEEM statistics reveal the structure and plasmonic response of the network to be homogeneous on average. This translates into a relatively uniform surface-enhanced Raman scattering (SERS) response from biphenyl,4-4{sup ′}-dithiol (BPDT) molecules adsorbed onto different sites of the network. Reproducible, bright, and low-background SERS spectra are recorded and assigned on the basis of density functional theory calculations in which BPDT is chemisorbed onto the vertex of a finite tetrahedral Ag cluster consisting of 20 Ag atoms. A notable agreement between experiment and theory allows us to rigorously account for the observable vibrational states of BPDT in the ∼200–2200 cm{sup −1} region of the spectrum. Finite difference time domain simulations further reveal that physical enhancement factors on the order of 10{sup 6} are attainable at the nanogaps formed between the silver nanospheres in the 2D array. Combined with modest chemical enhancement factors, this study paves the way for reproducible single molecule signals from an easily self-assembled SERS substrate.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗