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At least 235 records · Page 13

Untapped Benefits of Porous Liquids for Gas Capture: Low-Energy Regeneration

Current liquid-phase gas capture materials incur high operational costs due to energy-intensive regeneration processes, creating an industrial need for alternative materials that retain engineering benefits while reducing energy requirements. Porous liquids (PLs), liquid-phase materials with permanent internal porosity, have emerged as promising replacements with excellent gas absorption capacity and selectivity. Despite these benefits, evaluation of regeneration in PLs remains rare. In this Perspective, we evaluate the effects of solvent interactions, mass transport, and binding site formation that control PL regeneration. While conventional regeneration methods exist in PLs, the diversity of PL compositions allows for novel regeneration processes including light irradiation via use of photosensitive azobenzene-based cages, isostatic compression to collapse internal pore structures, and localized heating via sonication for gas desorption. In conclusion, the wide variability in porous host materials that generate the internal porosity in PLs facilitates innovative low-energy regeneration pathways, positioning them as a transformative solution in separation technologies.

gas capture↗

Luminescent Metal–Organic Framework for the Selective Detection of Aldehydes

The detection of toxic, hazardous chemical species is an important task because they pose serious risks to either the environment or human health. Luminescent metal–organic frameworks (LMOFs) as alternative sensors offer rapid and sensitive detection of chemical species. Interactions between chemical species and LMOFs result in changes in the photoluminescence (PL) profile of the LMOFs which can be readily detected using a simple fluorometer. Herein, we report the use of a robust, Zn-based LMOF, [Zn 5 (μ 3 -OH) 2 (adtb) 2 (H 2 O) 5 ·5 DMA] (Zn-adtb, LMOF-341), for the selective detection of benzaldehyde. Upon exposure to benzaldehyde, Zn-adtb experiences significant luminescent quenching, as characterized through PL experiments. Photoluminescent titration experiments reveal that LMOF-341 has a detection limit of 64 ppm and a Ksv value of 179 M –1 for benzaldehyde. Furthermore, we study the guest–host interactions that occur between LMOF-341 and benzaldehyde through in situ Fourier transform infrared and computational modeling employing density functional theory. The results show that benzaldehyde interacts more strongly with LMOF-341 compared to formaldehyde and propionaldehyde. Furthermore, our combined studies also reveal that the mechanism of luminescence quenching originates from an electron-transfer process.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Near-Infrared Photoluminescence from Spin-Flip Excited States of π-Conjugated Tris(quinolinolate) Chromium(III) Complexes

Tuning metal–ligand covalency offers promising design strategies to tailor the photoluminescence (PL) emission energies of metal-centered, spin-flip excited states. Herein, we report a series of tris(quinolinolate) chromium(III) complexes that exhibit record-low near-infrared II emission energies in a fluid solution at room temperature, afforded by their strong metal–ligand covalencies. Appending π-conjugated arylethynyl substituents to quinolinolate ligands resulted in minimal changes to metal–ligand bond lengths, facilitating nearly indiscriminate metal–ligand covalencies for each tris(quinolinolate) chromium(III) complex. As a result, near-infrared II emission was observed across the series, while simultaneously affording careful tuning of the 4 LMCT/ 4 ( 1 ILCT) electronic transition energies across the visible region. Here, detailed analyses of ground-state electronic structures and excited-state electronic transitions revealed that PL arises from a ligand-field, 2 E excited state, admixed with charge-transfer character. This assignment was supported by solvent-dependent near-infrared emission energies and long excited-state lifetimes, consistent with spin-forbidden relaxation (ranging from 115 ± 5 to 123 ± 1 ns across the series). Utilizing spectroscopic data, ligand-field parameters were quantified, further rationalizing the role of strong metal–ligand covalency in enabling near-infrared II emission. Supported by these results, this study presents a new class of ligands that enable room-temperature near-infrared II emission in chromium(III)-based spin-flip excited states.

Absorption spectroscopy↗

Connecting Femtosecond Transient Absorption Microscopy with Spatially Coregistered Time Averaged Optical Imaging Modalities

Multimodal all-optical imaging involving coregistered femtosecond transient absorption microscopy (TAM), time-integrated photoluminescence (PL), and steady-state modalities such as confocal reflectance and transmission offers an appealing approach to gain a comprehensive understanding of complex electronic excited-state phenomena in spatially heterogeneous systems. A unique combination of these modalities allows us to unravel not only the competing electronic excited-state dynamical processes but also the underlying morphological information with simultaneous high temporal and spatial resolution. However, correlating the various images obtained from time-resolved and time-independent modalities is generally nontrivial and particularly challenging when the electronic dynamics under study evolve in both time and space. Here, we demonstrate a new approach for rationally correlating time-resolved microscopy with coregistered time-integrated or steady-state modalities. Specifically, our approach involves an extended global lifetime analysis of the time-resolved microscopic data set to separate distinct dynamical processes taking place on commensurate time scales, and the resulting decay-associated amplitude maps (DAAMs) were applied to explore correlations with the images acquired using time-independent modalities. The feasibility of our approach was validated through analyzing a multimodal data set acquired from a thin film of chloride-containing mixed lead halide perovskites (CH 3 NH 3 PbI 3–x Cl x ) using femtosecond transient absorption, time-integrated PL, and confocal reflectance microscopies. Analysis of the results obtained enable us to gain new insight into the complex ultrafast relaxation dynamics in this highly heterogeneous system.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Auger Dynamics in InP/ZnSe/ZnS Quantum Dots Having Pure and Doped Shells

In this study, we report the negative trion and biexciton Auger dynamics in very high-quality InP/ZnSe/ZnS quantum dots (QDs) having varying amounts of indium-based traps in the ZnSe shell. Negative trion times are determined by time-correlated photon-counting measurements on QDs that have been photoreduced with lithium triethylborohydride. We find that the Auger times vary from 280 to 425 ps and scale linearly with the total particle volume. Excess indium in the ZnSe shell gives rise to hole traps that are transiently populated following photoexcitation. Comparing stoichiometric and nonstoichiometric particles, we find that the negative trion lifetimes are independent of the presence of indium in the ZnSe shell. Biexciton dynamics are determined from transient absorption (TA) bleach recovery measurements. Absorption of two photons results in the formation of two types of biexcitons: those having both holes in the InP core (XX state) and those having one hole trapped in the ZnSe shell (XT state). XX state Auger times are measured in stoichiometric QDs, and for these particles, the Auger times are ~80 ps. Nonstoichiometric QDs show an additional long TA decay component, assigned to Auger recombination of the XT state. Here, a previous study (J. Phys. Chem. C 2021, 125, 4110–4118) found that hole trapping at indium-based shell traps results in a slow photoluminescence (PL) rise component. We find that the fraction of the XT state formed by the absorption of two photons correlates with the product of the fraction of slow PL rise and the rise time constant following one-photon excitation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Imaging Charged Exciton Localization in van der Waals WSe 2 /MoSe 2 Heterobilayers

Exciton localization in transition-metal dichalcogenide monolayers is behind a variety of interesting phenomena and applications, including broad-spectrum solar cells and singlephoton emissions. Strain fields at the periphery of topographically distinct features such as nanoscopic bubbles were recently associated with localized charge-neutral excitons. Here, we use tip-enhanced photoluminescence (PL) to visualize excitons in WSe 2 /MoSe 2 heterobilayers (HBL). We find strong optical emission from charged excitons, particularly positively charged trions, in HBL supported by interlayer charge transfer. Our results reveal strong trion confinement, with a localization length scale comparable to the trion size, at the apex region inside individual nanoscopic bubbles. Nano-PL mapping also shows sub-10 nm spatial variations in the localized trion emission spectra, which stem from atomic-scale potential energy fluctuations. These findings demonstrate the possibility of confining charged exciton complexes that are electrically tunable, opening up further opportunities to probe many-body exciton physics, and to explore additional possible sites for strong exciton localization that can lead to quantum emissions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Theory of Photoluminescence Spectral Line Shapes of Semiconductor Nanocrystals

Single-molecule photoluminescence (PL) spectroscopy of semiconductor nanocrystals (NCs) reveals the nature of exciton–phonon interactions in NCs. Understanding the homogeneous spectral line shapes and their temperature dependence remains an open problem. Here, we develop an atomistic model to describe the PL spectrum of NCs, accounting for excitonic effects, phonon dispersion relations, and exciton–phonon couplings. We validate our model using single-NC measurements on CdSe/CdS NCs from T = 4 to 290 K, and we find that the slightly asymmetric main peak at low temperatures is comprised of a narrow zero-phonon line (ZPL) and acoustic phonon sidebands. Furthermore, we identify the specific phonon modes that give rise to the optical phonon sidebands. At temperatures above 200 K, the spectral line width shows a stronger dependence upon the temperature, which we demonstrate to be correlated with higher order exciton–phonon couplings. We also identify the line width dependence upon reorganization energy, NC core sizes, and shell thicknesses.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Extending the Near-Infrared Emission Range of Indium Phosphide Quantum Dots for Multiplexed In Vivo Imaging

This report of the reddest emitting indium phosphide quantum dots (InP QDs) to date demonstrates tunable, near-infrared (NIR) photoluminescence (PL) as well as PL multiplexing in the first optical tissue window while avoiding toxic constituents. This synthesis overcomes the InP “growth bottleneck” and extends the emission peak of InP QDs deeper into the first optical tissue window using an inverted QD heterostructure, specifically ZnSe/InP/ZnS core/shell/shell nanoparticles. The QDs exhibit InP shell thickness-dependent tunable emission with peaks ranging from 515–845 nm. The high absorptivity of InP yields effective photoexcitation of the QDs with UV, visible, and NIR wavelengths. These nanoparticles extend the range of tunable direct-bandgap emission from InP-based nanostructures, effectively overcoming a synthetic barrier that has prevented InPbased QDs from reaching their full potential as NIR imaging agents. Further, multiplexed lymph node imaging in a mouse model demonstrates the potential of the NIR-emitting InP particles for in vivo imaging.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Excitation-Dependent High-Lying Excitonic Exchange via Interlayer Energy Transfer from Lower - to - Higher Bandgap 2D Material

High light absorption (~15%) and strong photoluminescence (PL) emission in monolayer (1L) transition metal dichalcogenides (TMDs) make them ideal candidates for optoelectronic device applications. Competing interlayer charge transfer (CT) and energy transfer (ET) processes control the photocarrier relaxation pathways in TMD heterostructures (HSs). In TMDs, long-distance ET can survive up to several tens of nm, unlike the CT process. Our experiment shows that an efficient ET occurs from the 1Ls WSe 2 -to-MoS 2 with an interlayer hexagonal boron nitride (hBN), due to the resonant overlapping of the high-lying excitonic states between the two TMDs, resulting in enhanced HS MoS 2 PL emission. This type of unconventional ET from the lower-to-higher optical bandgap material is not typical in the TMD HSs. With increasing temperature, the ET process becomes weaker due to the increased electron–phonon scattering, destroying the enhanced MoS 2 emission. Our work provides new insight into the long-distance ET process and its effect on the photocarrier relaxation pathways.

2D material↗

Surface Effects on Pyrene Luminescence Excitation

Pyrene is a polycyclic aromatic hydrocarbon with fluorescence in the 370-400 nm range. The optical properties of pyrene deposited on different substrates were investigated from experimental and theoretical points of view. In contrast to prior studies of surface-enhanced fluorescence, in this work all substrates were semiconductors or insulators. Experimentally, the intensity of photoluminescence (PL) and PL excitation (PLE) spectra were investigated. PLE spectra of pyrene’s monomer emission show that the intensities of the two main absorption peaks vary according to the chosen substrate. Here, calculations for pyrene on zinc sulfide (ZnS) and surface-oxidized diamond suggest that this connection arises from the alignment of the pyrene electronic levels relative to the band edges of the substrate. The absorption peak at 272 nm (4.56 eV) is shown to depend on the HOMO-1→LUMO orbital contribution while the 335 nm (3.70 eV) peak depends upon the HOMO→LUMO transition. When the HOMO-1 level falls inside the substrate valence band, as in the case of ZnS, there is significant hybridization of the molecular state with surface states that causes an enhancement of the 272 nm peak. For pyrene on diamond, however, the HOMO-1 level falls in the substrate bandgap, leading to negligible hybridization and thus no enhancement.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Temperature-Dependent Phase Stable Hybrid Halide Perovskite Films by Chemical Vapor Deposition

Methylammonium lead iodide (MAPbI 3-x Cl x ) thin films were synthesized using chemical vapor deposition. Temperature-dependent grazing incidence synchrotron-based X-ray diffraction measurements confirm that the structure of MAP-bI 3-x Cl x , where Cl acts more like a dopant, remains throughout in the tetragonal phase in the temperature range of 20-300 K. Here these studies are further correlated with temperature-dependent photo-luminescence (PL) studies. The PL peak energy monotonically increases with temperature, suggestive of a single-phase behavior. Resistance measurements conducted as a function of temperature show an absence of inflection points, suggesting uniformity in its phase. Between 200 and 325 K, the resistance remains a constant.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Self-Trapped-Exciton Radiative Recombination in β–Ga 2 O 3 : Impact of Two Concurrent Nonradiative Auger Processes

The peculiarities of radiative and nonradiative processes associated with self-trapped intrinsic eXcitons in the excited β-Ga 2 O 3 crystals are studied via time-resolved techniques of induced absorption, transient grating, and photoluminescence (PL) at room temperature. The excitation above the bandgap is produced by laser pulses with linear light polarization parallel and orthogonal in the (–201) and (001) planes. We elucidate that the nonradiative recombination rate occurring in the eXciton prevails over its radiative emission rate in a wide range of free carrier concentration composed of excited and equilibrium electrons. Hence, the nonradiative recombination has no effect on the strong anisotropy and the shape of the eXciton emission band. However, we find out that the conventional ABC model of electron effective lifetime is insufficient for explanation of the excitation dependences. Inclusion of two nonradiative Auger mechanisms in a modified ABC formula provides excellent agreement of these dependences. We conclude that the trap-assisted Auger process is in proportion to the free electron density with coefficient B = 1.1 × 10 –11 cm 3 /s and appears at low/intermediate excitation, while the triple-particle Auger process is in proportion to Δn 2 with coefficient C = 8 × 10 –30 cm 6 /s and appears at high excitation conditions. The transition between two Auger mechanisms is accompanied by a rise of the eXciton diffusivity in preferred crystallographic directions where the radiative PL intensity is maximal. The diffusion length LD in these directions can reach values ~300 nm, but, at high excitations, LD becomes limited by Auger lifetimes. These findings pave the way for the implementation of self-trapped eXcitons into specific optoelectronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Moisture-Driven Formation and Growth of Quasi-2-D Organolead Halide Perovskite Crystallites

Ruddlesden–Popper phase quasi-2-D organolead halide perovskites like n-butylammonium methylammonium lead iodide (nBA-MAPI) exhibit improved moisture stability over typical 3-D perovskite materials, making them exciting for use in a variety of applications such as photovoltaic (PV) devices. This improved stability is the result of a unique disproportionation-based degradation mechanism that protects the bulk of the nBA-MAPI from extensive damage through the formation of a protective, low-n surface layer. In addition to this surface layer, nBA-MAPI films also exhibit the dynamic growth of micrometer-scale crystallites and cracks at the surface of the film, unique and potentially important byproducts of quasi-2-D perovskite disproportionation. Here, we present a detailed study of these crystallites using several analytical techniques including photoluminescence spectroscopy (PL), confocal fluorescence microscopy (CFM), atomic force microscopy (AFM) combined with time-of-flight-secondary ion mass spectrometry (ToF-SIMS), and others in an effort to better understand the relationship between material disproportionation and crystallite growth. Our results show that the crystallites form after exposure to humid air and confirm that they are composed of low-n phases of nBA-MAPI. The crystallites are found to extend into the interior of the film and exhibit continued growth while exposed to moisture over 72 h. This growth is accompanied by both a decrease in the bulk 2-D phase and an increase in a 3-D-like phase in the surface PL spectra, indicating that the crystallites are likely a product of moisture-driven disproportionation. Importantly, similar crystallites are also observed to form within model PV devices, indicating that such processes must be accounted for when designing future devices containing materials like nBA-MAPI.

36 MATERIALS SCIENCE↗

Size- and Phase-Controlled Nanometer-Thick ß-Ga2O3 Films with Green Photoluminescence for Optoelectronic Applications

Realization and optimization of the tunable/enhanced optical properties is critical to further advance the field of optoelectronics, photonics, and nano-electronics. In this context, here, we demonstrate green-emission characteristics with a ~30 fold enhancement in selectively engineered nanocrystalline Ga2O3 with a control over size, phase and interface nanostructure. Pulsed-laser-deposited ß-phase Ga2O3 films with an average crystallite size of ~9 nm along with a highly dense, close-compact nano-columnar structure with lowest possible defect density facilitates the thirty-fold enhancement in the photoluminescence (PL) intensity in green-region. Enhanced PL-emission in the optimized, engineered nano-architecture sheds light in designing Ga2O3-materials for promising future optoelectronic/photocatalytic applications.

Ga2O3, Nanocrystalline Films, Pulsed-Laser Deposit↗

Single-Step Nonthermal Plasma Synthesis of Water-Soluble and Near-Infrared-Emitting Si Quantum Dots for Bioimaging Applications

Here, we present a single-step nonthermal plasma method for the synthesis of near-infrared (NIR)-emitting and water-soluble Si quantum dots (QDs) for bioimaging applications. Oxygen gas and water vapor were introduced together with acrylic acid (AA) into the afterglow region of the synthesis plasma leading to the surface functionalization of the upstream synthesized Si QDs. The simultaneous surface oxidation and ligand grafting enabled solubility and colloidal stability of the Si QDs in water, as evidenced by strongly reduced hydrodynamic diameters. Aged Si QDs in water emitted NIR photoluminescence (PL) at around 830 nm. The PL quantum yield of the Si QDs in water increased over time from initially undetectable to ~30% after 8 days. Cell viability tests showed that >70% of 3T3 cells survived for 24 h at a concentration of 200 μg/mL of oxidized AA grafted Si QDs. The water solubility, NIR emission with a high quantum yield, and cell viability make the Si QDs promising for bioimaging applications.

36 MATERIALS SCIENCE↗

UV-Enabled Defect Engineering in Multilayer GaSe and InSe and UV Writing of the Grating Pattern

III–VI post-transition-metal chalcogenides are layered semiconductor materials that exhibit direct band gaps in multilayers. Defect engineering is essential in 2D layered semiconductors for functional devices. Here, in this work, we report defect engineering in multilayer gallium selenide (GaSe) and indium selenide (InSe), where defects generated by ultraviolet (UV, 325 nm) laser irradiation result in an additional photoluminescence (PL) line. The additional PL line is due to defect-bound excitons. Characteristics of the defect emission are similar in GaSe and InSe samples subjected to UV irradiation, air annealing, and hydrostatic pressure. Two-beam UV interference was applied to create grating patterns with a periodic array of low and high densities of defects in GaSe. Density functional theory has identified the defect type in GaSe. The results provide valuable insights into defect generation and UV scribing of photonic circuits in 2D Se-based multilayers for optical integration in a 2D platform.

2D multilayered materials↗

Intrinsic Halide Immiscibility in 2D Mixed-Halide Ruddlesden–Popper Perovskites

Halide alloying of 3D and 2D Ruddlesden–Popper lead halide perovskites (RPPs) allows their bandgaps to be fine-tuned for optoelectronic applications. Many studies of mixed-halide RPPs assume that halide mixing yields homogeneous alloys like in 3D lead halide perovskites, with halide segregation only occurring under perturbations like light or heat. Here we carefully investigate the mixed I/Br phases in solution grown microplates of three representative n = 1 and n = 2 RPP phases to reveal heterogeneous halide microscale domains – even in absence of photoinduced phase separation. Such halide immiscibility is revealed by X-ray diffraction and heterogeneity is confirmed by secondary ion mass spectrometry (SIMS) imaging, however, comparison with photoluminescence (PL) imaging results show how PL information alone can falsely imply homogeneous alloy formation in heterogeneous RPPs. Finally, we then demonstrate the use of spectral imaging as an alternative high-throughput tool for accurate halide phase characterization in mixed-halide RPPs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Local Background Hole Density Drives Nonradiative Recombination in Tin Halide Perovskites

In this study, we use multimodal microscopy to study carrier recombination in semiconducting tin halide perovskite films based on PEA 0.2 FA 0.8 SnI 3 (PEA = phenethylammonium; FA = formamidinium). We use the observation of pseudo-first-order photoluminescence (PL) decay kinetics to establish a method for quantifying the hole dopant level and nonradiative recombination rate constant. We find that untreated PEA 0.2 FA 0.8 SnI 3 films exhibit large hole doping concentrations of p 0 ≈ 10 19 cm –3 , which is reduced to p 0 ≈ 10 16 cm –3 after SnF 2 treatment. While it is well-known that the radiative recombination rates are increased with p 0 , we reveal that the nonradiative rate is also increased. We find that p-type regions in untreated PEA 0.2 FA 0.8 SnI 3 films are centers for nonradiative recombination, which are diminished in films with p 0 ≈ 10 16 cm –3 . We discover significant PL heterogeneity even in PEA 0.2 FA 0.8 SnI 3 films with moderate dopant levels, suggesting that new strategies to eliminate deleterious defects in PEA 0.2 FA 0.8 SnI 3 must be developed.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗