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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2012

Magnetic pulser and sample holder for time- and spin-resolved photoemission spectroscopy on magnetic materials

A compact coil setup, in conjunction with a high power current pulser, is presented; developed especially for time- and spin-resolved photoemission spectroscopy measuring the sample in magnetic remanence at room temperature. A novel approach is presented where the sample is switched in the stray field of a coil pair. This enables the electrical biasing of the sample without altering the electron trajectories due to field gradients introduced by the coils. The pulser driving the coils reaches a peak power of 1 MW at 1 kA with a switching frequency up to 10 kHz suitable for experiments, for example, with state of the art repetition rates of femtosecond laser systems.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2012

Intrinsic ultrathin topological insulators grown via molecular beam epitaxy characterized by in-situ angle resolved photoemission spectroscopy

We demonstrate the capability of growing high quality ultrathin (10 or fewer quintuple layers) films of the topological insulators Bi{sub 2}Se{sub 3} and Bi{sub 2}Te{sub 3} using molecular beam epitaxy. Unlike previous growth techniques, which often pin the Fermi energy in the conduction band for ultrathin samples, our samples remain intrinsic bulk insulators. We characterize these films using in-situ angle resolved photoemission spectroscopy, which is a direct probe of bandstructure, and ex-situ atomic force microscopy. We find that the conduction band lies above the Fermi energy, indicating bulk insulating behavior with only the surface states crossing the Fermi energy. The use of a thermal cracker allows for more stoichiometric flux rates during growth, while still creating intrinsically doped films, paving the way for future improvements in growth of topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2012

An ultrafast angle-resolved photoemission apparatus for measuring complex materials

We present technical specifications for a high resolution time- and angle-resolved photoemission spectroscopy setup based on a hemispherical electron analyzer and cavity-dumped solid state Ti:sapphire laser used to generate pump and probe beams, respectively, at 1.48 and 5.93 eV. The pulse repetition rate can be tuned from 209 Hz to 54.3 MHz. Under typical operating settings the system has an overall energy resolution of 23 meV, an overall momentum resolution of 0.003 A{sup -1}, and an overall time resolution of 310 fs. We illustrate the system capabilities with representative data on the cuprate superconductor Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+{delta}}. The descriptions and analyses presented here will inform new developments in ultrafast electron spectroscopy.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2013

Conduction band offset at GeO{sub 2}/Ge interface determined by internal photoemission and charge-corrected x-ray photoelectron spectroscopies

We report a consistent conduction band offset (CBO) at a GeO{sub 2}/Ge interface determined by internal photoemission spectroscopy (IPE) and charge-corrected X-ray photoelectron spectroscopy (XPS). IPE results showed that the CBO value was larger than 1.5 eV irrespective of metal electrode and substrate type variance, while an accurate determination of valence band offset (VBO) by XPS requires a careful correction of differential charging phenomena. The VBO value was determined to be 3.60 {+-} 0.2 eV by XPS after charge correction, thus yielding a CBO (1.60 {+-} 0.2 eV) in excellent agreement with the IPE results. Such a large CBO (>1.5 eV) confirmed here is promising in terms of using GeO{sub 2} as a potential passivation layer for future Ge-based scaled CMOS devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Ultrathin magnetic oxide EuO films on Si(001) using SiO{sub x} passivation-Controlled by hard x-ray photoemission spectroscopy

We present the chemical and structural optimization of ultrathin magnetic oxide EuO films on silicon. By applying a controlled in situ passivation of the Si(001) surface with SiO{sub x} in the monolayer regime, metallic silicide contaminations at the interface can be effectively reduced down to a sub-monolayer coverage, as was carefully quantified by interface-sensitive hard x-ray photoemission spectroscopy. Heteroepitaxial growth of EuO on Si(001) is sustained for this ultrathin SiO{sub x}-passivation, and bulk-near magnetic properties are observed for the 4 nm-thin EuO films. Our successful combination of chemically and structurally optimized EuO/Si(001) heterostructures by ultrathin in situ SiO{sub x} passivation makes this system promising for an application as alternative spin functional tunnel contacts in spin-FETs.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Photoemission spectroscopy study of the lanthanum lutetium oxide/silicon interface

Rare earth oxides are promising candidates for future integration into nano-electronics. A key property of these oxides is their ability to form silicates in order to replace the interfacial layer in Si-based complementary metal-oxide field effect transistors. In this work a detailed study of lanthanum lutetium oxide based gate stacks is presented. Special attention is given to the silicate formation at temperatures typical for CMOS processing. The experimental analysis is based on hard x-ray photoemission spectroscopy complemented by standard laboratory experiments as Rutherford backscattering spectrometry and high-resolution transmission electron microscopy. Homogenously distributed La silicate and Lu silicate at the Si interface are proven to form already during gate oxide deposition. During the thermal treatment Si atoms diffuse through the oxide layer towards the TiN metal gate. This mechanism is identified to be promoted via Lu-O bonds, whereby the diffusion of La was found to be less important.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Design of an ultrahigh vacuum transfer mechanism to interconnect an oxide molecular beam epitaxy growth chamber and an x-ray photoemission spectroscopy analysis system

We designed a mechanism and the accompanying sample holders to transfer between a VEECO 930 oxide molecular beam epitaxy (MBE) and a PHI Versa Probe X-ray photoemission spectroscopy (XPS) chamber within a multiple station growth, processing, and analysis system through ultrahigh vacuum (UHV). The mechanism consists of four parts: (1) a platen compatible with the MBE growth stage, (2) a platen compatible with the XPS analysis stage, (3) a sample coupon that is transferred between the two platens, and (4) the accompanying UHV transfer line. The mechanism offers a robust design that enables transfer back and forth between the growth chamber and the analysis chamber, and yet is flexible enough to allow transfer between standard sample holders for thin film growth and masked sample holders for making electrical contacts and Schottky junctions, all without breaking vacuum. We used this mechanism to transfer a barium strontium titanate thin film into the XPS analysis chamber and performed XPS measurements before and after exposing the sample to the air. After air exposure, a thin overlayer of carbon was found to form and a significant shift ({approx}1 eV) in the core level binding energies was observed.

36 MATERIALS SCIENCE↗
DOE OSTI2013

A novel approach for the characterization of a bilayer of phenyl-c71-butyric-acid-methyl ester and pentacene using ultraviolet photoemission spectroscopy and argon gas cluster ion beam sputtering process

The material arrangement and energy level alignment of an organic bilayer comprising of phenyl-c71-butyric-acid-methyl ester (PCBM-71) and pentacene were studied using ultraviolet photoelectron spectroscopy (UPS) and the argon gas cluster ion beam (GCIB) sputtering process. Although there is a small difference in the full width at half maximum of the carbon C 1s core level peaks and differences in the oxygen O 1s core levels of an X-ray photoemission spectroscopy spectra, these differences are insufficient to clearly distinguish between PCBM-71 and pentacene layers and to classify the interface and bulk regions. On the other hand, the valence band structures in the UPS spectra contain completely distinct configurations for the PCBM-71 and pentacene layers, even when they have similar atomic compositions. According to the valence band structures of the PCBM-71/pentacene/electrodes, the highest unoccupied molecular orbital (HOMO) region of pentacene is at least 0.8 eV closer to the Fermi level than that of PCBM-71 and it does not overlap with any of the chemical states in the valence band structure of PCBM-71. Therefore, by just following the variations in the area of the HOMO region of pentacene, the interface/bulk regions of the PCBM/pentacene layers were distinctly categorized. Besides, the variation of valence band structures as a function of the Ar GCIB sputtering time fully corroborated with the surface morphologies observed in the atomic force microscope images. In summary, we believe that the novel approach, which involves UPS analysis in conjunction with Ar GCIB sputtering, can be one of the best methods to characterize the material distribution and energy level alignments of stacks of organic layers.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Rapid high-resolution spin- and angle-resolved photoemission spectroscopy with pulsed laser source and time-of-flight spectrometer

A high-efficiency spin- and angle-resolved photoemission spectroscopy (spin-ARPES) spectrometer is coupled with a laboratory-based laser for rapid high-resolution measurements. The spectrometer combines time-of-flight (TOF) energy measurements with low-energy exchange scattering spin polarimetry for high detection efficiencies. Samples are irradiated with fourth harmonic photons generated from a cavity-dumped Ti:sapphire laser that provides high photon flux in a narrow bandwidth, with a pulse timing structure ideally matched to the needs of the TOF spectrometer. The overall efficiency of the combined system results in near-E{sub F} spin-resolved ARPES measurements with an unprecedented combination of energy resolution and acquisition speed. This allows high-resolution spin measurements with a large number of data points spanning multiple dimensions of interest (energy, momentum, photon polarization, etc.) and thus enables experiments not otherwise possible. The system is demonstrated with spin-resolved energy and momentum mapping of the L-gap Au(111) surface states, a prototypical Rashba system. The successful integration of the spectrometer with the pulsed laser system demonstrates its potential for simultaneous spin- and time-resolved ARPES with pump-probe based measurements.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Low-energy inverse photoemission spectroscopy using a high-resolution grating spectrometer in the near ultraviolet range

An inverse photoemission spectroscopy (IPES) apparatus using a Czerny-Turner grating spectrometer is demonstrated. Previous IPES instruments based on grating spectrometers used a concave grating and operated in the vacuum ultraviolet range. The reflectance of such gratings is lower than 20% and the aberration cannot be finely corrected leading to an energy resolution of up to 0.1 eV. In the present study, employing the low energy IPES regime [H. Yoshida, Chem. Phys. Lett. 539–540, 180 (2012)], incident electrons with a kinetic energy below 5 eV are used, while photon emission in the range of between 250 and 370 nm is analyzed with a 10-cm Czerny-Turner grating spectrometer. The signal intensity is at least 30 times higher than the previous apparatus. The resolution of photon detection is set at 0.07 eV though the ultimate resolution is one order of magnitude higher. The experiment is performed both by sweeping the electron energy (isochromat mode) and by simultaneously analyzing the photon of whole wavelength range (tunable photon energy mode)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Epitaxial growth of CeO{sub 2}(111) film on Ru(0001): Scanning tunneling microscopy (STM) and x-ray photoemission spectroscopy (XPS) study

We formed an epitaxial film of CeO{sub 2}(111) by sublimating Ce atoms on Ru(0001) surface kept at elevated temperature in an oxygen ambient. X-ray photoemission spectroscopy measurement revealed a decrease of Ce{sup 4+}/Ce{sup 3+} ratio in a small temperature window of the growth temperature between 1070 and 1096 K, which corresponds to the reduction of the CeO{sub 2}(111). Scanning tunneling microscope image showed that a film with a wide terrace and a sharp step edge was obtained when the film was grown at the temperatures close to the reduction temperature, and the terrace width observed on the sample grown at 1060 K was more than twice of that grown at 1040 K. On the surface grown above the reduction temperature, the surface with a wide terrace and a sharp step was confirmed, but small dots were also seen in the terrace part, which are considerably Ce atoms adsorbed at the oxygen vacancies on the reduced surface. This experiment demonstrated that it is required to use the substrate temperature close to the reduction temperature to obtain CeO{sub 2}(111) with wide terrace width and sharp step edges.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Note: Low energy inverse photoemission spectroscopy apparatus

An apparatus for the low-energy inverse photoemission spectroscopy is described. In this technique, low energy electron having kinetic energy below 4 eV is incident to the sample and detect the emitted photons in the near ultraviolet range (below 5 eV, longer than 250 nm) to investigate the unoccupied states of the solid materials. Compared with the prototype apparatus reported previously [H. Yoshida, Chem. Phys. Lett. 539–540, 180–185 (2012)], the collection efficiency of photons is improved by a factor of four and practically any conductive substrates can be used. The overall resolution is 0.27 eV.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Observation of strontium segregation in LaAlO{sub 3}/SrTiO{sub 3} and NdGaO{sub 3}/SrTiO{sub 3} oxide heterostructures by X-ray photoemission spectroscopy

LaAlO{sub 3} and NdGaO{sub 3} thin films of different thicknesses have been grown by pulsed laser deposition on TiO{sub 2}-terminated SrTiO{sub 3} single crystals and investigated by soft X-ray photoemission spectroscopy. The surface sensitivity of the measurements has been tuned by varying photon energy hν and emission angle Θ. In contrast to the core levels of the other elements, the Sr 3d line shows an unexpected splitting for higher surface sensitivity, signaling the presence of a second strontium component. From our quantitative analysis we conclude that during the growth process Sr atoms diffuse away from the substrate and segregate at the surface of the heterostructure, possibly forming strontium oxide.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Extracting the temperature of hot carriers in time- and angle-resolved photoemission

The interaction of light with a material's electronic system creates an out-of-equilibrium (non-thermal) distribution of optically excited electrons. Non-equilibrium dynamics relaxes this distribution on an ultrafast timescale to a hot Fermi-Dirac distribution with a well-defined temperature. The advent of time- and angle-resolved photoemission spectroscopy (TR-ARPES) experiments has made it possible to track the decay of the temperature of the excited hot electrons in selected states in the Brillouin zone, and to reveal their cooling in unprecedented detail in a variety of emerging materials. It is, however, not a straightforward task to determine the temperature with high accuracy. This is mainly attributable to an a priori unknown position of the Fermi level and the fact that the shape of the Fermi edge can be severely perturbed when the state in question is crossing the Fermi energy. Here, we introduce a method that circumvents these difficulties and accurately extracts both the temperature and the position of the Fermi level for a hot carrier distribution by tracking the occupation statistics of the carriers measured in a TR-ARPES experiment.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2014

Synchrotron radiation photoemission study of interfacial electronic structure of HfO{sub 2} on In{sub 0.53}Ga{sub 0.47}As(001)-4 × 2 from atomic layer deposition

The growth of a passivating layer on a In{sub 0.53}Ga{sub 0.47}As(001)-4 × 2 surface by atomic-layer deposition of tetrakis[ethylmethylamino]Hafnium (TEMAHf)) followed by the water pulse was investigated by synchrotron radiation photoemission. The Hf atoms maintain four-fold coordination, both after the initial TEMAHf deposition and the subsequent water pulse. The Hf atoms initially bond to the As dangling bonds of the surface As atom located on the edges of the raised ridges. One EMA ligand is removed in this process. Subsequent water exposure substitutes OH ligand for one or more remaining EMA ligands. These in turn react with TEMAHf to form Hf-O-Hf bonds allowing the hafnium oxides to grow. The surface In atoms on the terrace of the raised ridges were partially removed, but none bonded of the precursor atoms. Correlations between the interfacial electronic structure and the electric performance are discussed.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Direct imaging of electron recombination and transport on a semiconductor surface by femtosecond time-resolved photoemission electron microscopy

Much effort has been devoted to the development of techniques to probe carrier dynamics, which govern many semiconductor device characteristics. We report direct imaging of electron dynamics on semiconductor surfaces by time-resolved photoemission electron microscopy using femtosecond laser pulses. The experiments utilized a variable-repetition-rate femtosecond laser system to suppress sample charging problems. The recombination of photogenerated electrons and the lateral motion of the electrons driven by an external electric field on a GaAs surface were visualized. The mobility was estimated from a linear relationship between the drift velocity and the potential gradient.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Electronic states of NO{sub 2}-exposed H-terminated diamond/Al{sub 2}O{sub 3} heterointerface studied by synchrotron radiation photoemission and X-ray absorption spectroscopy

The energy band-lineup and the electronic structure of NO{sub 2}-exposed H-terminated diamond/Al{sub 2}O{sub 3} heterointerface have been investigated by synchrotron radiation photoemission and x-ray absorption near-edge structure (XANES) measurements. It is found that the energy band-lineup is stagger-type, so-called type-II, with its valence band discontinuity of as high as 3.9 eV and its conduction band discontinuity of 2.7 eV. The valence band maximum of the H-terminated diamond surface is positioned at Fermi level as a result of high-density hole accumulation on the diamond side. The XANES measurement has shown that the oxygen-derived interface state locates at about 1–3 eV above the Fermi level.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Influence of the contact potential and space-charge effect on the performance of a Stoffel-Johnson design electron source for inverse photoemission spectroscopy

By imaging the spatial intensity distribution of the electrons from a Stoffel-Johnson (SJ) type low energy electron source for inverse photoemission spectroscopy (IPES), we find that the focus is distorted when the beam current exceeds the limiting value due to space charge effect. The space charge effect and the contact potential difference suppress the beam current at low energies (<10 eV). In this work, we show that these limitations of the SJ source can be overcome by compensation of the contact potential difference between the cathode and the lens electrodes and an uniform well focused electron beam with the set kinetic energy can be obtained. The size of the electron beam is around 1 mm full width at half maximum over the whole energy range of 5 to 30 eV generally used for IPES. The compensation of the contact potential difference also enhances the beam current substantially at low energies (<10 eV) and uniform beam current is achieved for the whole energy range. We find that the drift in the electron beam position is sensitive to the lens electrode separation and it is about 1 mm over the whole energy range. By measuring the n = 1 image potential state on Cu(100), we show that the resolution is better when the cathode filament current is set to lower values.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗