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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Temperature dependence (4K to 300K) of the electrical resistivity of methane grown carbon fibers

Experimental measurements of the electrical resistivity vs temperature of methane vapor grown carbon fibers are presented. The fibers are heat treated from 1100 C (as-grown) to 3000 C. Data are fit to a standard two band model, which yields values for boundary scattering limited electron mobility, in-plane mean free path, energy band overlap, and total carrier density. The data are also fit to an ellipsoidal band model, where data fits yield effective masses, band overlap, Fermi velocity, phonon contributions to scattering, and ionized impurity scattering rates.

Woollam, John A.↗
NASA NTRS1987

Optical characterization of semi-insulating GaAs - Determination of the Fermi energy, the concentraion of the midgap EL2 level and its occupancy

The key electronic characteristics of semiinsulating GaAs, i.e., the Fermi energy, concentration, and occupancy of the midgap donor EL2, and the net concentration of ionized acceptors can all be determined from high-resolution measurements of the EL2 intracenter absorption. The procedure is based on the measurement of zero-phonon line intensity before and after the complete transfer of EL2 to its metastable state followed by thermal recovery. The procedure is quantitative, involves no fitting parameters, and unlike existing methods, is applicable even when a significant part of the EL2 is ionized.

Lagowski, J.↗
NASA NTRS1987

Mid infrared LHS system packaging using flexible waveguides

As mid IR fiber optic systems are rapidly approaching a reality, so is the feasibility of fiber optic laser heterodyne systems. Laser heterodyne spectroscopy for high resolution monitoring of atmospheric gaseous pollutants is necessarily in the mid IR, the region in which the absorption signature of gaseous species is most prominent. It so happens that the lowest theoretical loss due to Rayleigh-Brillouin scattering also lies in the mid IR. Prospects of highly efficient laser heterodyne systems are thus very good. Such fibers are now beginning to be commercially available, and a test program is being conducted for such fibers with ambient temperature ranging from cryogenic to above room, and stringest mechanical flexibility requirements. Preliminary results are encouraging. A program is being started to explore the possibility of mid IR fiber optic device applications, by taking advantage of this phonon rich region. The potential long interaction length in fibers coupled with predicted extremely low losses point to stimulated Brillouin scattering based devices in the mW range. The generation of backscattered sBs at low laser powers is significant not only as an ultimate power limiting factor for laser transmission in fibers in the mid IR, but also the presence of frequency-shifted multiple order sBs Stokes and antiStokes lines will certainly have severe effect on the laser beats crucial in high resolution heterodyne spectroscopy.

Yu, Chung↗
NASA NTRS1987

Raman spectroscopic investigations of Hg-Cd-Te melts

Raman scattering measurements are reported for a series of Hg sub1-xCd subxTe (with x less than or =0.2) materials from 295 K (room temperature) to 1126K (up to and above their liquidus temperatures), and for Hg sub1-xCd subxTe (x=0.3) at 285K. The samples were contained in high-temperature optically-flat fused silica cell. Variable temperature measurements were effected in a three-zone, high-temperature furnace equipped with optical windows, and monitored externally by three independently programmable temperature controllers. All studies were made in the backscattering geometry using the 5145 A line of an Ar+ ion laser, with incident power less than 250 mW, as the excitiation source. An intensity enhancement is observed for a mode in each of the compositions studied. The frequency of this mode varies with composition, 142/cm for HgTe, and 128/cm for both the Hg sub1-xCd subxTe (x=0.053 and 0.204) samples. In addition, a shift to lower frequency as a function of temperature is observed in all samples. This shift is most prominent for the x=0.053 sample. The temperature dependence of these modes as the liquidus temperatures are achieved and surpassed for these samples is presented as being associated with a structural transition in the Hg-rich compositions of the Hg sub1-xCd subxTe series. To our knowledge, this is the first reported study of Raman scattering by phonons in the melts of these materials.

Morrobel-Sosa, Anny↗
NASA NTRS1987

Implementation of variable time step stochastic dynamics for electronically inelastic gas-surface collisions

A variable time step algorithm has been implemented for solving the stochastic equations of motion for gas-surface collisions. It has been tested for a simple model of electronically inelastic collisions with an insulator surface in which the phonon manifold acts as a heat bath and electronic states are localized. In addition to reproducing the accurate nuclear dynamics of the surface atoms, numerical calculations have shown the algorithm to yield accurate ensemble averages of physical observables such as electronic transition probabilities and total energy loss of the gas atom to the surface. This new algorithm offers a gain in efficieny of up to an order of magnitude compared to fixed time step integration.

Garrett, Bruce C.↗
NASA NTRS1987

High temperature thermoelectric energy conversion

The theory and current status of materials research for high-temperature thermoelectric energy conversion are reviewed. Semiconductors are shown to be the preferred class of materials for this application. Optimization of the figure of merit of both broadband and narrow-band semiconductors is discussed as a function of temperature. Phonon scattering mechanisms are discussed, and basic material guidelines are given for reduction of thermal conductivity. Two general classes of materials show promise for high temperature figure of merit (Z) values, namely the rare earth chalcogenides and the boron-rich borides. The electronic transport properties of the rare earth chalcogenides are explicable on the basis of degenerate or partially degenerate n-type semiconductors. Boron and boron-rich borides exhibit p-type hopping conductivity, with detailed explanations proposed for the transport differing from compound to compound. Some discussion is presented on the reasons for the low thermal conductivities in these materials. Also, ZTs greater than one appear to have been realized at high temperature in many of these compounds.

Wood, Charles↗
NASA NTRS1988

Ballistic transport in II-VI semiconductor compounds and alloys

Realistic band structures are used in calculating the group velocity and scattering rates for electrons with injection energies up to 1 eV in ZnTe, CdTe, and the low-effective-mass alloy Hg(0.7)Cd(0.3)Te. Scattering from longitudinal optical phonons, ionized impurities, and alloy disorder have been included in the full band-structure calculation, which automatically includes both intra- and intervalley scattering. Of the II-VI materials considered, at 77 K HgCdTe is superior for low injection energies (up to 0.25 eV) while CdTe is superior at higher injection energies (1 eV) at room temperature. The attainable mean free paths (equal to or greater than 1000 A) and group velocities (equal to or greater than 10 to the 8th cm/s) for both systems are comparable to values found in III-V systems.

Berding, M. A.↗
NASA NTRS1987

HgCdTe versus HgZnTe - Electronic properties and vacancy formation energies

The alloy variation of the band gap and the electron and hole effective masses have been calculated for HgCdTe and HgZnTe. Band-gap bowing is larger in HgZnTe than in HgCdTe because of the larger bond length mismatch of HgTe and ZnTe; electron and hole effective masses are found to be comparable for the two alloys for a given band gap. The electron mobility was calculated in both alloys with contributions from phonon, impurity, and alloy scattering. Contributions to the E1 line width due to alloy and impurity scattering in Hg(0.7)Cd(03)Te have been calculated. Results of calculations of the vacancy formation energies in HgTe, ZnTe, and CdTe are discussed.

Berding, M. A.↗
NASA NTRS1987

Effect of the microstructure on the thermoelectric properties of polycrystalline lanthanum chalcogenides

Small amounts of second phase materials can have important effects on the thermoelectric properties of polycrystalline gamma-La(3-x)X4 (X-S, Te; X in the range of 0 to 1/3). Microscopic examination by SEM of hot pressed La(3-x)Te4 samples has revealed from 1-5 vol. pct of La2O2Te, an amount which is not detected by X-ray powder diffraction measurements. This amount of La2O2Te resulting from oxygen contamination can reduce the concentration of electrons by as much as 10 to 75 percent below the electron concentration calculated for single phase La(3-x)Te4 in the composition range of greatest interest. Small amounts of second phase materials can also lower the lattice thermal conductivity by scattering low frequency phonons. These results indicate that microstructural effects should be considered when electrical and thermal properties of polycrystalline materials are analyzed.

Lockwood, A.↗
NASA NTRS1988

Advances toward high spectral resolution quantum X-ray calorimetry

Thermal detectors for X-ray spectroscopy combining high spectral resolution and quantum efficiency have been developed. These microcalorimeters measure the energy released in the absorption of a single photon by sensing the rise in temperature of a small absorbing structure. The ultimate energy resolution of such a device is limited by the thermodynamic power fluctuations in the thermal link between the calorimeter and isothermal bath and can in principle be made as low as 1 eV. The performance of a real device is degraded due to noise contributions such as excess 1/f noise in the thermistor and incomplete conversion of energy into phonons. The authors report some recent advances in thermometry, X-ray absorption and thermalization, fabrication techniques, and detector optimization in the presence of noise. These improvements have resulted in a device with a spectral resolution of 17 eV FWHM, measured at 6 keV.

Moseley, S. H.↗
NASA NTRS1988

Tunable superlattice p-i-n photodetectors: Characteristics, theory, and applications

Extended measurements and theory on the recently developed monolithic wavelength demultiplexer consisting of voltage-tunable superlattice p-i-n photodetectors in a waveguide configuration are discussed. It is shown that the device is able to demultiplex and detect two optical signals with a wavelength separation of 20 nm directly into different electrical channels at a data rate of 1 Gb/s and with a crosstalk attenuation varying between 20 and 28 dB, depending on the polarization. The minimum acceptable crosstalk attenuation at a data rate of 100 Mb/s is determined to be 10 dB. The feasibility of using the device as a polarization angle sensor for linearly polarized light is also demonstrated. A theory for the emission of photogenerated carriers out of the quantum wells is included, since this is potentially a speed limiting mechanism in these detectors. It is shown that a theory of thermally assisted tunneling by polar optical phonon interaction is able to predict emission times consistent with the observed temporal response.

Larsson, Anders↗
NASA NTRS1988

Theory of high-field electronic transport in bulk ZnS and ZnSe

This paper theoretically investigates the nature of electronic transport and the high-energy tails of the electron distribution functions in bulk ZnSe and ZnS as a function of the applied electric field were investigated using calculations based on an ensemble Monte Carlo model. The calculations include the full details of the first two conduction bands as well as the full-order treatment of the electron-phonon scattering mechanisms. Results of high-field electronic transport calculations show that the electron energy distribution function is significanty cooler in ZnS than in ZnSe at comparable electric field strengths. The cooler distribution in ZnS is due to the much greater electron scattering rate. Consequently, it is more difficult to achieve carrier heating to comparable energies in ZnS than in ZnSe.

Brennan, Kevin↗
NASA NTRS1988

High temperature thermal conductivity measurements on lanthanum sulfides using the flash method

In the past, high temperature specific heat and hence thermal conductivity measurements, using the flash method have not been very accurate. This is due to the difficulty of exactly determining the amount of heat deposited on the front face of a sample during each flash. This problem has now been solved by sputtering a thin layer of graphite on the standard reference and test samples. Data taken shows that the amount of heat deposited can now be determined to within about 2 percent resulting in more accurate thermal conductivity data. The results of measurements on several lanthanum sulfides with stoichiometries between LaS(1.35) and LaS(1.48) are reported and show a minimum in the lattice thermal conductivity at a composition of around LaS(1.41). This is believed to be due to the scattering of low-frequency phonons by large defects, i.e., second phase material (beta-phase) and pores.

Vandersande, J. W.↗
NASA NTRS1989

Measurement of a high electrical quality factor in a niobium resonator for a gravitational radiation detector

The mechanical and electrical quality factors of a 10-g niobium resonator were measured at 4.4 K and were found to be 8.1 x 10 to the 6th, and 3.8 x 10 to the 6th, respectively. The value for the electrical quality factor is high enough for a system operating at 50 mK at a sensitivity level of one phonon. The resonator's low damping properties make it suitable for use as a transducer for a cryogenic three-mode gravitational radiation detector. A practical design is given for the mounting of the resonator on a 2400-kg aluminum-bar detector. Projections are made for the sensitivity of a 2400-kg bar instrumented as a three-mode system with this resonator inductively coupled to a SQUID.

Folkner, W. M.↗
NASA NTRS1989

Evaluation of the feasibility of a far-infrared laser based on intersubband transitions in GaAs quantum wells

The threshold current and quantum efficiency are calculated for an FIR injection laser based on intersubband transitions in GaAs single quantum wells. By considering the balance of gain against the free carrier and transverse optical phonon absorption, and the intersubband transition time, the wavelength dependence of the threshold current is calculated. For the wavelength range 50-120 microns, the required threshold currents are the lowest and have reasonable values of 1-10 kA/sq cm. The threshold quantum efficiency in that range is expected to be about 0.0001.

Borenstain, Shmuel I.↗
NASA NTRS1989

Intersubband Auger recombination and population inversion in quantum-well subbands

The intersubband-Auger-recombination time of electrons under population-inversion conditions in a single quantum well is calculated by taking into account momentum- and energy-conservation rules, and by employing Fermi-Dirac statistics. The screened matrix element of the electron-electron interaction and the overlap integral are calculated for an infinitely deep quantum well. The results are in a good agreement with published experimental data. As a major nonradiative process, the Auger recombination is related to threshold current of infrared lasers based on intersubband transitions in quantum-well structures. The realization of these devices and other limitations to achieving population inversion are discussed. In view of the results, development of these lasers for emission wavelengths corresponding to energies below the LO-phonon energy seems feasible.

Borenstain, S.↗
NASA NTRS1989

Optical Johnson noise thermometry

A concept is being explored that an optical analog of the electrical Johnson noise may be used to measure temperature independently of emissivity. The concept is that a laser beam may be modulated on reflection from a hot surface by interaction of the laser photons with the thermally agitated conduction electrons or the lattice phonons, thereby adding noise to the reflected laser beam. If the reflectance noise can be detected and quantified in a background of other noise in the optical and signal processing systems, the reflectance noise may provide a noncontact measurement of the absolute surface temperature and may be independent of the surface's emissivity.

Shepard, R. L.↗
NASA NTRS1990

Charge transfer polarisation wave and carrier pairing in the high T(sub c) copper oxides

The High T(sub c) oxides are highly polarizable materials and are charge transfer insulators. The charge transfer polarization wave formalism is developed in these oxides. The dispersion relationships due to long range dipole-dipole interaction of a charge transfer dipole lattice are obtained in 3-D and 2-D. These are high frequency bosons and their coupling with carriers is weak and antiadiabatic in nature. As a result, the mass renormalization of the carriers is negligible in complete contrast to conventional electron-phonon interaction, that give polarons and bipolarons. Both bound and superconducting pairing is discussed for a model Hamiltonian valid in the antiadiabatic regime, both in 3-D and 2-D. The stability of the charge transfer dipole lattice has interesting consequences that are discussed.

Chakraverty, B. K.↗