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Disorder-induced broadening of the conduction and valence band eigenenergies is calculated for an ensemble of dome-shaped InGaAs quantum dots of diameter 20nm using an sp3d5s* tight binding model.
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Lateral CNT Switches: a) dc CNT switches were demonstrated to operate at low voltages, low powers and high speeds. b) RF simulations of switch in series configuration with metallized tube yielded good RF performance 1) Isolation simulated to be approx. 20 dB at 100 GHz. 2) Insertion loss simulated to be < 0.5 dB at 100 GHz. Vertical CNT Switches: a) Thermal CVD was used to mechanically constrain tubes in nanopockets; tubes not self-supporting. b) Demonstrated growth of vertically aligned arrays and single-few MWNTs using dc PECVD with Ni catalyst using optical lithography.
CNT Vacuum Gauges: a) have a broad range of pressure response from 760 - 10(exp -6) Torr. b) have current changes approx. 100's nA in high vacuum regime (10(exp -6) Torr) and sensitivity increases with power and substrate removal. c) have a negative dR/dT (TCR negative) where a thermal hopping energy E(sub a) was determined to be approx. 40 meV. d) have compatible fabrication requirements for their integration with micromachined structures. e) can be operated at low power (nW - micro-W). f) have an active device region footprint of < 10 sq microns. g) are non-intrusive due to small size and passive operation.
The seminars invitees include representatives from industry, nonprofit research facility and universities. The presentation provides an overview of the NASAGSFC locations, technical capabilities and applied nanotechnology interests. Initially presented are advances by the broader technological communities on current miniaturized multiscale advanced manufacturing and 3D printing products on the micro and macro scale. Briefly assessed is the potential of moving toward the nanoscale for possible space flight applications and challenges. Lastly, highlighted are GSFCs current successes in nano-technology developments and targeted future applications.
Material variations on an atomic scale enable the quantum mechanical functionality of devices such as resonant tunneling diodes (RTDs), quantum well infrared photodetectors (QWIPs), quantum well lasers, and heterostructure field effect transistors (HFETs).