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At least 235 records · Page 13

An Integrated 520-600 GHz Sub-Harmonic Mixer and Tripler Combination Based on GaAs MMIC Membrane Planar Schottky Diodes

We present here the design, development and test of an integrated sub-millimeter front-end featuring a 520-600 GHz sub-harmonic mixer and a 260-300 GHz frequency tripler in a single cavity. Both devices used GaAs MMIC membrane planar Schottky diode technology. The sub-harmonic mixer/tripler circuit has been tested using conventional machined as well as silicon micro-machined blocks. Measurement results on the metal block give best DSB mixer noise temperature of 2360 K and conversion losses of 7.7 dB at 520 GHz. Preliminary results on the silicon micro-machined blocks give a DSB mixer noise temperature of 4860 K and conversion losses of 12.16 dB at 540 GHz. The LO input power required to pump the integrated tripler/sub-harmonic mixer for both packages is between 30 and 50 mW.

Monolithic Microwave Integrated Circuit, (MMIC)↗

MMIC devices for active phased array antennas

The use of finlines for microwave monolithic integrated circuit application in the 20 to 40 GHz frequency range. Other wave guiding structures, are also examined from a comparative point of view and some sonclusions are drawn on the basis of the results.

Mittra, R.↗

Miniature modular microwave end-to-end receiver

An end-to-end microwave receiver system contained in a single miniature hybrid package mounted on a single heatsink is presented. It includes an input end connected to a microwave receiver antenna and an output end which produces a digital count proportional to the amplitude of a signal of a selected microwave frequency band received at the antenna and corresponding to one of the water vapor absorption lines near frequencies of 20 GHz or 30 GHz. The hybrid package is on the order of several centimeters in length and a few centimeters in height and width. The package includes an L-shaped carrier having a base surface, a vertical wall extending up from the base surface and forming a corner therewith, and connection pins extending through the vertical wall. Modular blocks rest on the base surface against the vertical wall and support microwave monolithic integrated circuits on top surfaces thereof connected to the external connection pins. The modular blocks lie end-to-end on the base surface so as to be modularly removable by sliding along the base surface beneath the external connection pins away from the vertical wall.

Sukamto, Lin M.↗

Performance of a Ka-band transponder breadboard for deep-space applications

This article summarizes the design concepts applied in the development of and advanced Ka-band (34.4 GHz/32 GHz) transponder breadboard for the next generation of space communications systems applications. The selected architecture upgrades the X-band (7.2 GHz/8.4 GHz) deep-space transponder (DST) to provide Da-band up/Ka- and X-band down capability. The Ka-band transponder breadboard incorporates several state-of-the-art components, including sampling mixers, a Ka-band dielectric resonator oscillator, and microwave monolithic integrated circuits (MMICs). The MMICs that were tested in the breadboard include upconverters, downconverters, automatic gain control circuits, mixers, phase modulators, and amplifiers. The measured receiver dynamic range, tracking range, acquisition rate, static phase error, and phase jitter characteristics of the Ka-band breadboard interfaced to the advanced engineering model X-band DST are in good agreement with the expected performance. The results show a receiver tracking threshold of -149 dBm with a dynamic range of 80 dB and a downlink phase jitter of 7 deg rms. The analytical results of phase noise and Allan standard deviation are in good agreement with the experimental results.

Mysoor, N. R.↗

Characterization of Hybrid Ferroelectric/HTS Thin Films for Tunable Microwave Components

Since the discovery of High-Temperature-Superconductors (HTS) in 1986, a diversity of HTS-based microwave components has been demonstrated. Because of their low conductor losses, HTS-based components are very attractive for integration into microwave circuits for space communication systems. Recent advancements have made deposition of ferroelectric thin films onto HTS thin films possible. Due to the sensitivity of the ferroelectric's dielectric constant (epsilon(sub r)) to an externally applied electric field (E), ferroelectric/superconducting structures could be used in the fabrication of low loss, tunable microwave components. In this paper, we report on our study of Ba(0.5)Sr(0.5)TiO3/YBa2Cu3O(7-delta) and Ba(0.08)Sr(0.92)TiO3/YBa2Cu3O(7-delta) ferroelectric/superconducting thin films on lanthanum aluminate (LaAlO3) substrates. For the (Ba:Sr, 0.50:0.50) epitaxial sample, a epsilon(sub r) of 425 and a loss tangent (tan delta) of 0.040 were measured at 298 K, 1.0 MHz, and zero applied E. For the same sample, a epsilon(sub r) of 360 and tan delta of 0.036 were obtained at 77 K, 1.0 MHz, and zero applied E. Variations in epsilon(sub r) from 180 to 360 were observed over an applied E range of 0V/cm less than or equal to E less than or equal to 5.62 x 10(exp 4) V/cm with little change in tan delta. However, the range of epsilon(sub r) variation for the polycrystalline (Ba:Sr, 0.08:0.92) sample over 0V/cm less than or equal to E less than or equal to 4.00 x 10(exp 4) V/cm was only 3.6 percent while tan delta increased markedly. These results indicate that a lack of epitaxy between the ferroelectric and superconducting layers decreases tuning and increases microwave losses.

Winters, M. D.↗

Ultra Small Aperture Terminal for Ka-Band SATCOM

An ultra small aperture terminal (USAT) at Ka-band frequency has been developed by Lewis Research Center (LeRC) for data rates up to 1.5 Mbps in the transmit mode and 40 Mbps in receive mode. The terminal consists of a 35 cm diameter offset-fed parabolic antenna which is attached to a solid state power amplifier and low noise amplifier. A single down converter is used to convert the Ka-band frequency to 70 MHz intermediate frequency (IF). A variable rate (9.6 Kbps to 10 Mbps) commercial modem with a standard RS-449/RS-232 interface is used to provide point-to-point digital services. The terminal has been demonstrated numerous times using the Advanced Communications Technology Satellite (ACTS) and the 4.5 in Link Evaluation Terminal (LET) in Cleveland. A conceptual design for an advanced terminal has also been developed. This advanced USAT utilizes Microwave Monolithic Integrated Circuit (MMIC) and flat plate array technologies. This terminal will be self contained in a single package which will include a 1 watt solid state amplifier (SSPA), low noise amplifier (LNA) and a modem card located behind the aperture of the array. The advanced USAT will be light weight, transportable, low cost and easy to point to the satellite. This paper will introduce designs for the reflector based and array based USAT's.

Acosta, Roberto↗

Monolithic Power Amplifiers Covering 70-115 GHz

A number of monolithic W-band power amplifiers have been developed for local oscillators of the Far Infrared and Sub-millimeter Telescope.

power amplifiers monolithic microwave integrated c↗

A G-band 160 GHz T/R Module Concept for Planetary Landing Radar

In this work, the concept of a G-band transmit/receive (T/R) module centered at 160 GHz was discussed. The design makes use of state-of-the-art G-band MMIC low noise amplifiers and power amplifiers, and a high speed SPDT InGaAs PIN diode switch. The paper reports on the designs, chip results, and the integration concept for a 160 GHz T/R module. The G-band T/R module has applications toward precision altimetry and velocimetry measurements in landing radar, such as in future planetary landers on the surface of Mars

power amplifier↗

T/R Multi-Chip MMIC Modules for 150 GHz

Modules containing multiple monolithic microwave integrated-circuit (MMIC) chips have been built as prototypes of transmitting/receiving (T/R) modules for millimeter-wavelength radar systems, including phased-array radar systems to be used for diverse purposes that could include guidance and avoidance of hazards for landing spacecraft, imaging systems for detecting hidden weapons, and hazard-avoidance systems for automobiles. Whereas prior landing radar systems have operated at frequencies around 35 GHz, the integrated circuits in this module operate in a frequency band centered at about 150 GHz. The higher frequency (and, hence, shorter wavelength), is expected to make it possible to obtain finer spatial resolution while also using smaller antennas and thereby reducing the sizes and masses of the affected systems.

Samoska, Lorene A.↗

MMIC Amplifier Produces Gain of 10 dB at 235 GHz

The first solid-state amplifier capable of producing gain at a frequency >215 GHz has been demonstrated. This amplifier was fabricated as a monolithic microwave integrated-circuit (MMIC) chip containing InP high-electron-mobility transistors (HEMTs) of 0.07 micron gate length on a 50- m-thick InP substrate.

Dawson, Douglas↗

MMIC Amplifiers for 90 to 130 GHz

This brief describes two monolithic microwave integrated-circuit (MMIC) amplifier chips optimized to function in the frequency range of 90 to 130 GHz, covering nearly all of F-band (90 - 140 GHz). These amplifiers were designed specifically for local-oscillator units in astronomical radio telescopes such as the Atacama Large Millimeter Array (ALMA). They could also be readily adapted for use in electronic test equipment, automotive radar systems, and communications systems that operate between 90 and 130 GHz.

Samoska, Lorene↗

Update on Waveguide-Embedded Differential MMIC Amplifiers

There is an update on the subject matter of Differential InP HEMT MMIC Amplifiers Embedded in Waveguides (NPO-42857) NASA Tech Briefs, Vol. 33, No. 9 (September 2009), page 35. To recapitulate: Monolithic microwave integrated-circuit (MMIC) amplifiers of a type now being developed for operation at frequencies of hundreds of gigahertz contain InP high-electron-mobility transistors (HEMTs) in a differential configuration. The MMICs are designed integrally with, and embedded in, waveguide packages. The instant work does not mention InP HEMTs but otherwise reiterates part of the subject matter of the cited prior article, with emphasis on the following salient points: An MMIC is mounted in the electric-field plane ("E-plane") of a waveguide and includes a finline transition to each differential-amplifier stage. The differential configuration creates a virtual ground within each pair of transistor-gate fingers, eliminating the need for external radio-frequency grounding. This work concludes by describing a single-stage differential submillimeter-wave amplifier packaged in a rectangular waveguide and summarizing results of tests of this amplifier at frequencies of 220 and 305 GHz.

Kangaslahti, Pekka↗

High-Aperture-Efficiency Horn Antenna

A horn antenna (see Figure 1) has been developed to satisfy requirements specific to its use as an essential component of a high-efficiency Ka-band amplifier: The combination of the horn antenna and an associated microstrip-patch antenna array is required to function as a spatial power divider that feeds 25 monolithic microwave integrated-circuit (MMIC) power amplifiers. The foregoing requirement translates to, among other things, a further requirement that the horn produce a uniform, vertically polarized electromagnetic field in its patches identically so that the MMICs can operate at maximum efficiency. The horn is fed from a square waveguide of 5.9436-mm-square cross section via a transition piece. The horn features cosine-tapered, dielectric-filled longitudinal corrugations in its vertical walls to create a hard boundary condition: This aspect of the horn design causes the field in the horn aperture to be substantially vertically polarized and to be nearly uniform in amplitude and phase. As used here, cosine-tapered signifies that the depth of the corrugations is a cosine function of distance along the horn. Preliminary results of finite-element simulations of performance have shown that by virtue of the cosine taper the impedance response of this horn can be expected to be better than has been achieved previously in a similar horn having linearly tapered dielectric- filled longitudinal corrugations. It is possible to create a hard boundary condition by use of a single dielectric-filled corrugation in each affected wall, but better results can be obtained with more corrugations. Simulations were performed for a one- and a three-corrugation cosine-taper design. For comparison, a simulation was also performed for a linear- taper design (see Figure 2). The three-corrugation design was chosen to minimize the cost of fabrication while still affording acceptably high performance. Future designs using more corrugations per wavelength are expected to provide better field responses and, hence, greater aperture efficiencies.

Pickens, Wesley↗

High-Performance Solid-State W-Band Power Amplifiers

The figure shows one of four solid-state power amplifiers, each capable of generating an output power greater than or equal to 240 mW over one of four overlapping frequency bands from 71 to 106 GHz. (The bands are 71 to 84, 80 to 92, 88 to 99, and 89 to 106 GHz.) The amplifiers are designed for optimum performance at a temperature of 130 K. These amplifiers were developed specifically for incorporation into frequency-multiplier chains in local oscillators in a low-noise, far-infrared receiving instrument to be launched into outer space to make astrophysical observations. The designs of these amplifiers may also be of interest to designers and manufacturers of terrestrial W-band communication and radar systems. Each amplifier includes a set of six high-electron-mobility transistor (HEMT) GaAs monolithic microwave integrated-circuit (MMIC) chips, microstrip cavities, and other components packaged in a housing made from A-40 silicon-aluminum alloy. This alloy was chosen because, for the original intended spacecraft application, it offers an acceptable compromise among the partially competing requirements for high thermal conductivity, low mass, and low thermal expansion. Problems that were solved in designing the amplifiers included designing connectors and packages to fit the available space; designing microstrip signal-power splitters and combiners; matching of impedances across the frequency bands; matching of the electrical characteristics of those chips installed in parallel power-combining arms; control and levelling of output power across the bands; and designing the MMICs, microstrips, and microstrip cavities to suppress tendencies toward oscillation in several modes, both inside and outside the desired frequency bands.

Gaier, Todd↗

GEOSTAR-II: A Prototype Water Vapor Imager/Sounder for the Path Mission

We describe the development and progress of the GeoSTAR-II risk reduction activity for the NASA Earth Science Decadal Survey PATH Mission. The activity directly addresses areas of technical risk including the system design, low noise receiver production, sub-array development, signal distribution and digital signal processing.

Monolithic Microwave Integrated Circuit (MMIC)↗