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At least 235 records · Page 13

RF MEMS Phase Shifters and their Application in Phase Array Antennas

Electronically scanned arrays are required for space based radars that are capable of tracking multiple robots, rovers, or other assets simultaneously and for beam-hopping communication systems between the various assets. ^Traditionally, these phased array antennas used GaAs Monolithic Microwave Integrated Circuit (MMIC) phase shifters, power amplifiers, and low noise amplifiers to amplify and steer the beam, but the development of RF MEMS switches over the past ten years has enabled system designers to consider replacing the GaAs MMIC phase shifters with RF Micro-Electro Mechanical System (MEMS) phase shifters. In this paper, the implication of replacing the relatively high loss GaAs MMICs with low loss MEMS phase shifters is investigated.

Scardelletti, Maximilian↗

K-Band Phased Array Developed for Low- Earth-Orbit Satellite Communications

Future rapid deployment of low- and medium-Earth-orbit satellite constellations that will offer various narrow- to wide-band wireless communications services will require phased-array antennas that feature wide-angle and superagile electronic steering of one or more antenna beams. Antennas, which employ monolithic microwave integrated circuits (MMIC), are perfectly suited for this application. Under a cooperative agreement, an MMIC-based, K-band phased-array antenna is being developed with 50/50 cost sharing by the NASA Lewis Research Center and Raytheon Systems Company. The transmitting array, which will operate at 19 gigahertz (GHz), is a state-of-the-art design that features dual, independent, electronically steerable beam operation ( 42 ), a stand-alone thermal management, and a high-density tile architecture. This array can transmit 622 megabits per second (Mbps) in each beam from Earth orbit to small Earth terminals. The weight of the total array package is expected to be less than 8 lb. The tile integration technology (flip chip MMIC tile) chosen for this project represents a major advancement in phased-array engineering and holds much promise for reducing manufacturing costs.

Anzic, Godfrey↗

Antennas Designed for Advanced Communications for Air Traffic Management (AC/ATM) Project

The goal of the Advanced Communications for Air Traffic Management (AC/ATM) Project at the NASA Glenn Research Center at Lewis Field is to enable a communications infrastructure that provides the capacity, efficiency, and flexibility necessary to realize a mature free-flight environment. The technical thrust of the AC/ATM Project is targeted at the design, development, integration, test, and demonstration of enabling technologies for global broadband aeronautical communications. Since Ku-band facilities and equipment are readily available, one of the near-term demonstrations involves a link through a Kuband communications satellite. Two conformally mounted antennas will support the initial AC/ATM communications links. Both of these are steered electronically through monolithic microwave integrated circuit (MMIC) amplifiers and phase shifters. This link will be asymmetrical with the downlink to the aircraft (mobile vehicle) at a throughput rate of greater than 1.5 megabits per second (Mbps), whereas the throughput rate of the uplink from the aircraft will be greater than 100 kilobits per second (kbps). The data on the downlink can be narrow-band, wide-band, or a combination of both, depending on the requirements of the experiment. The AC/ATM project is purchasing a phased-array Ku-band transmitting antenna for the uplink from the test vehicle. Many Ku-band receiving antennas have been built, and one will be borrowed for a short time to perform the initial experiments at the NASA Glenn Research Center at Lewis Field. The Ku-band transmitting antenna is a 254-element MMIC phased-array antenna being built by Boeing Phantom Works. Each element can radiate 100 mW. The antenna is approximately 43-cm high by 24-cm wide by 3.3-cm thick. It can be steered beyond 60 from broadside. The beamwidth varies from 6 at broadside to 12 degrees at 60 degrees, which is typical of phased-array antennas. When the antenna is steered to 60 degrees, the beamwidth will illuminate approximately five satellites on the orbital arc. Spread spectrum techniques will be employed to keep the power impinging on the adjacent satellites below their noise floor so that no interference results. This antenna is power limited. If the antenna elements (currently 254) are increased by a factor of 4 (1024) or 16 (4096), the gain will increase and the beamwidth will decrease in proportion. For the latter two antenna sizes, the power must be "backed off" to prevent interference with the neighboring satellites. The receiving antenna, which is approximately 90-cm high, 60-cm wide, and 3.5-cm thick, is composed of 1500 phased-array elements. The system phased-array controller can control both a 1500-element receiving antenna and a 500-element transmitting antenna. For ground testing, this controller will allow manual beam pointing and polarization alignment. For normal operation, the system can be connected to the receiving antenna and the navigation system for real-time autonomous track operation. This will be accomplished by first pointing both antennas at the satellite using information from the aircraft data bus. Then, the system phased-array controller will electronically adjust the antenna pointing of the receiving antenna to find the peak signal. After the peak signal has been found, the beam of the transmitting antenna will be pointed to the same steering angles as the receiving antenna. For initial ground testing without an aircraft, the ARINC 429 data bus (ARINC Inc., Annapolis, Maryland) will be simulated by a gyro system purchased for the follow-on to the Monolithic Microwave Integrated Circuit (MMIC) Arrays for Satellite Communication on the Move (MASCOM) Project. MASCOM utilized the Advanced Communications Technology Satellite (ACTS) with a pair of Ka-band experimental phased-array antennas.

Zakrajsek, Robert J.↗

High Power SiGe X-Band (8-10 GHz) Heterojunction Bipolar Transistors and Amplifiers

Limited by increased parasitics and thermal effects as the device size becomes large, current commercial SiGe power HBTs are difficult to operate at X-band (8-12 GHz) with adequate power added efficiencies at high power levels. We found that, by changing the heterostructure and doping profile of SiGe HBTs, their power gain can be significantly improved without resorting to substantial lateral scaling. Furthermore, employing a common-base configuration with proper doping profile instead of a common-emitter configuration improves the power gain characteristics of SiGe HBTs, which thus permits these devices to be efficiently operated at X-band. In this paper, we report the results of SiGe power HBTs and MMIC power amplifiers operating at 8-10 GHz. At 10 GHz, 22.5 dBm (178 mW) RF output power with concurrent gain of 7.32 dB is measured at the peak power-added efficiency of 20.0% and the maximum RF output power of 24.0 dBm (250 mW) is achieved from a 20 emitter finger SiGe power HBT. Demonstration of single-stage X-band medium-power linear MMIC power amplifier is also realized at 8 GHz. Employing a 10-emitter finger SiGe HBT and on-chip input and output matching passive components, a linear gain of 9.7 dB, a maximum output power of 23.4 dBm and peak power added efficiency of 16% is achieved from the power amplifier. The MMIC exhibits very low distortion with third order intermodulation (IM) suppression C/I of -13 dBc at output power of 21.2 dBm and over 20dBm third order output intercept point (OIP3).

Ma, Zhenqiang↗

Submillimeter-Wave Amplifier Module with Integrated Waveguide Transitions

To increase the usefulness of monolithic millimeter-wave integrated circuit (MMIC) components at submillimeter-wave frequencies, a chip has been designed that incorporates two integrated, radial E-plane probes with an MMIC amplifier in between, thus creating a fully integrated waveguide module. The integrated amplifier chip has been fabricated in 35-nm gate length InP high-electron-mobility-transistor (HEMT) technology. The radial probes were mated to grounded coplanar waveguide input and output lines in the internal amplifier. The total length of the internal HEMT amplifier is 550 m, while the total integrated chip length is 1,085 m. The chip thickness is 50 m with the chip width being 320 m. The internal MMIC amplifier is biased through wire-bond connections to the gates and drains of the chip. The chip has 3 stages, employing 35-nm gate length transistors in each stage. Wire bonds from the DC drain and gate pads are connected to off-chip shunt 51-pF capacitors, and additional off-chip capacitors and resistors are added to the gate and drain bias lines for low-frequency stability of the amplifier. Additionally, bond wires to the grounded coplanar waveguide pads at the RF input and output of the internal amplifier are added to ensure good ground connections to the waveguide package. The S-parameters of the module, not corrected for input or output waveguide loss, are measured at the waveguide flange edges. The amplifier module has over 10 dB of gain from 290 to 330 GHz, with a peak gain of over 14 dB at 307 GHz. The WR2.2 waveguide cutoff is again observed at 268 GHz. The module is biased at a drain current of 27 mA, a drain voltage of 1.24 V, and a gate voltage of +0.21 V. Return loss of the module is very good between 5 to 25 dB. This result illustrates the usefulness of the integrated radial probe transition, and the wide (over 10-percent) bandwidth that one can expect for amplifier modules with integrated radial probes in the submillimeter-regime (>300 GHz).

Samoska, Lorene↗

Power-Amplifier Module for 145 to 165 GHz

A power-amplifier module that operates in the frequency range of 145 to 165 GHz has been designed and constructed as a combination of (1) a previously developed monolithic microwave integrated circuit (MMIC) power amplifier and (2) a waveguide module. The amplifier chip was needed for driving a high-electron-mobility-transistor (HEMT) frequency doubler. While it was feasible to connect the amplifier and frequency-doubler chips by use of wire bonds, it was found to be much more convenient to test the amplifier and doubler chips separately. To facilitate separate testing, it was decided to package the amplifier and doubler chips in separate waveguide modules. Figure 1 shows the resulting amplifier module. The amplifier chip was described in "MMIC HEMT Power Amplifier for 140 to 170 GHz" (NPO-30127), NASA Tech Briefs, Vol. 27, No. 11, (November 2003), page 49. To recapitulate: This is a three-stage MMIC power amplifier that utilizes HEMTs as gain elements. The amplifier was originally designed to operate in the frequency range of 140 to 170 GHz. The waveguide module is based on a previously developed lower frequency module, redesigned to support operation in the frequency range of 140 to 220 GHz. Figure 2 presents results of one of several tests of the amplifier module - measurements of output power and gain as functions of input power at an output frequency of 150 GHz. Such an amplifier module has many applications to test equipment for power sources above 100 GHz.

Samoska, Lorene↗

NASA Tech Briefs, December 2009

Topics include: A Deep Space Network Portable Radio Science Receiver; Detecting Phase Boundaries in Hard-Sphere Suspensions; Low-Complexity Lossless and Near-Lossless Data Compression Technique for Multispectral Imagery; Very-Long-Distance Remote Hearing and Vibrometry; Using GPS to Detect Imminent Tsunamis; Stream Flow Prediction by Remote Sensing and Genetic Programming; Pilotless Frame Synchronization Using LDPC Code Constraints; Radiometer on a Chip; Measuring Luminescence Lifetime With Help of a DSP; Modulation Based on Probability Density Functions; Ku Telemetry Modulator for Suborbital Vehicles; Photonic Links for High-Performance Arraying of Antennas; Reconfigurable, Bi-Directional Flexfet Level Shifter for Low-Power, Rad-Hard Integration; Hardware-Efficient Monitoring of I/O Signals; Video System for Viewing From a Remote or Windowless Cockpit; Spacesuit Data Display and Management System; IEEE 1394 Hub With Fault Containment; Compact, Miniature MMIC Receiver Modules for an MMIC Array Spectrograph; Waveguide Transition for Submillimeter-Wave MMICs; Magnetic-Field-Tunable Superconducting Rectifier; Bonded Invar Clip Removal Using Foil Heaters; Fabricating Radial Groove Gratings Using Projection Photolithography; Gratings Fabricated on Flat Surfaces and Reproduced on Non-Flat Substrates; Method for Measuring the Volume-Scattering Function of Water; Method of Heating a Foam-Based Catalyst Bed; Small Deflection Energy Analyzer for Energy and Angular Distributions; Polymeric Bladder for Storing Liquid Oxygen; Pyrotechnic Simulator/Stray-Voltage Detector; Inventions Utilizing Microfluidics and Colloidal Particles; RuO2 Thermometer for Ultra-Low Temperatures; Ultra-Compact, High-Resolution LADAR System for 3D Imaging; Dual-Channel Multi-Purpose Telescope; Objective Lens Optimized for Wavefront Delivery, Pupil Imaging, and Pupil Ghosting; CMOS Camera Array With Onboard Memory; Quickly Approximating the Distance Between Two Objects; Processing Images of Craters for Spacecraft Navigation; Adaptive Morphological Feature-Based Object Classifier for a Color Imaging System; Rover Slip Validation and Prediction Algorithm; Safety and Quality Training Simulator; Supply-Chain Optimization Template; Algorithm for Computing Particle/Surface Interactions; Cryogenic Pupil Alignment Test Architecture for Aberrated Pupil Images; and Thermal Transport Model for Heat Sink Design.

Source record↗

Multichannel X-Band Dielectric-Resonator Oscillator

A multichannel dielectric-resonator oscillator (DRO), built as a prototype of a local oscillator for an X-band transmitter or receiver, is capable of being electrically tuned among and within 26 adjacent frequency channels, each 1.16 MHz wide, in a band ranging from 7,040 to 7,070 GHz. The tunability of this oscillator is what sets it apart from other DROs, making it possible to use mass-produced oscillator units of identical design in diverse X-band applications in which there are requirements to use different fixed frequencies or to switch among frequency channels. The oscillator (see figure) includes a custom-designed voltage-controlled-oscillator (VCO) monolithic microwave integrated circuit (MMIC), a dielectric resonator disk (puck), and two varactor-coupling circuits, all laid out on a 25-mil (0.635-mm)-thick alumina substrate having a length and width of 17.8 mm. The resonator disk has a diameter of 8.89 mm and a thickness of 4.01 mm. The oscillator is mounted in an 8.9-mm-deep cavity in a metal housing. The VCO MMIC incorporates a negative- resistance oscillator amplifier along with a buffer amplifier. The resonator disk is coupled to a microstrip transmission line connected to the negative-resistance port of the VCO MMIC. The two varactor-coupling circuits include microstrip lines, laid out orthogonally to each other, for coupling with the resonator disk. Each varactor microstrip line is DC-coupled to an external port via a microwave choke. One varactor is used for coarse tuning to select a channel; the other varactor is used (1) for fine tuning across the 1.16-MHz width of each channel and (2) as a feedback port for a phase-lock loop. The resonator disk is positioned to obtain (1) the most desirable bandwidth, (2) relatively tight coupling with the microstrip connected to the coarse-tuning varactor, and (3) relatively loose coupling with the microstrip connected to the fine-tuning varactor. Measurements of performance showed that the oscillator can be switched among any of the 26 channels and can be phase-locked to a nominal frequency in any channel. The degree of nonlinearity of tuning was found not to exceed 2.5 percent. The tuning sensitivity was found to be 6.15 MHz/V at a bias offset of -2 V on the phase-lock-loop varactor. The phase noise of the oscillator in free-running operation was found to be -107 dBc/Hz (where dBc signifies decibels relative to the carrier signal) at 100 kHz away from the carrier frequency.

Mysoor, Narayan↗

HEMT Frequency Doubler with Output at 300 GHz

An active frequency doubler in the form of an InP-based monolithic microwave integrated circuit (MMIC) containing a high-electron-mobility transistor (HEMT) has been demonstrated in operation at output frequencies in the vicinity of 300 GHz. This is the highestfrequency HEMT doubler reported to date, the next-highest-frequency active HEMT doubler having been previously reported to operate at 180 GHz. While the output power of this frequency doubler is less than that of a typical Schottky diode, this frequency doubler is considered an intermediate product of a continuing effort to realize the potential of active HEMT frequency doublers to operate with conversion efficiencies greater than those of passive diode frequency doublers. An additional incentive for developing active HEMT frequency doublers lies in the fact that they can be integrated with amplifiers, oscillators, and other circuitry on MMIC chips. The circuitry of the doubler MMIC (see Figure 1) features grounded coplanar waveguides. Air bridges and vias are used to make contact with the ground plane. The HEMT is biased for Class-A operation (in which current is conducted throughout each cycle of oscillation), which would ordinarily be better suited to linear amplification than to frequency doubling. Ordinarily, class-B operation (in which current is conducted during about half of each cycle of oscillation) would be more suitable for frequency doubling because of the essential nonlinearity of partial-cycle conduction. The reason for the unusual choice of class A was that computational simulations had shown that in this case, the efficiency in class B would be less than in class A. The input matching circuit of this doubler includes transmission lines that afford a good impedance match at the fundamental frequency, plus an open stub to prevent leakage of the second harmonic through the input terminals. The output circuit was designed to suppress the fundamental while providing a good match for the second harmonic.

Samoska, Lorene↗

670-GHz Down- and Up-Converting HEMT-Based Mixers

A large category of scientific investigation takes advantage of the interactions of signals in the frequency range from 300 to 1,000 GHz and higher. This includes astronomy and atmospheric science, where spectral observations in this frequency range give information about molecular abundances, pressures, and temperatures of small-sized molecules such as water. Additionally, there is a minimum in the atmospheric absorption at around 670 GHz that makes this frequency useful for terrestrial imaging, radar, and possibly communications purposes. This is because 670 GHz is a good compromise for imaging and radar applications between spatial resolution (for a given antenna size) that favors higher frequencies, and atmospheric losses that favor lower frequencies. A similar trade-off applies to communications link budgets: higher frequencies allow smaller antennas, but incur a higher loss. All of these applications usually require converting the RF (radio frequency) signal at 670 GHz to a lower IF (intermediate frequency) for processing. Further, transmitting for communication and radar generally requires up-conversion from IF to the RF. The current state-of-the-art device for performing the frequency conversion is based on Schottky diode mixers for both up and down conversion in this frequency range for room-temperature operation. Devices that can operate at room temperature are generally required for terrestrial, military, and planetary applications that cannot tolerate the mass, bulk, and power consumption of cryogenic cooling. The technology has recently advanced to the point that amplifiers in the region up to nearly 1,000 GHz are feasible. Almost all of these have been based on indium phosphide pseudomorphic high-electron mobility transistors (pHEMTs), in the form of monolithic microwave integrated circuits (MMICs). Since the processing of HEMT amplifiers is quite differ en t from that of Schottky diodes, use of Schottky mixers requires separate MMICs for the mixers and amplifiers. Fabrication of all the down-/up-conversion circuitry on single MMICs, using a ll-HEMT circuits, would constitute a major advance in circuit simplicity.

Schlecht, Enrich T.↗

Low Noise Amplifiers and Receivers for Remote Sensing

The study of atmospheric dynamics and climatology depend on accurate and frequent measurements of temperature and humidity profiles of the atmosphere. These measurements furthermore enable highly accurate measurements of ocean topography by providing total column water vapour data for radar path delay correction. The atmospheric temperature profile is characterized at the oxygen molecule absorption frequencies (60 and 118 GHz) and the humidity profile at the water molecule absorption frequencies (23 and 183 GHz). Total column measurements can be achieved by comparing measured radiometric temperatures at atmospheric window channels, such as 90, 130, and 166 GHz. The standard receiver technology for these frequencies was diode mixers with MMIC LNAs being applied at the lower frequencies. The sensitivity of millimeter wave receivers improved significantly with the introduction of the low noise 35 nm gate length InP MMIC amplifiers. We currently achieve 3 dB noise figure at 180 GHz and 2 dB noise figure at 90 GHz with our MMIC low noise amplifiers (LNAs) in room temperature. These amplifiers and the receivers we have built using them made it possible to conduct highly accurate airborne measurements campaigns from the Global Hawk unmanned aerial vehicle, develop millimeter wave internally calibrated radiometers for altimeter radar path delay correction, and build prototypes of large arrays of millimeter receivers for a geostationary interferometric sounder. We use the developed millimeter wave receivers to measure temperature and humidity profiles in the atmosphere and in hurricanes as well as to characterize the path delay error in ocean topography alitmetery.

low noise temperature↗

Low Noise Amplifiers and Receivers for Remote Sensing

The study of atmospheric dynamics and climatology depend on accurate and frequent measurements of temperature and humidity profiles of the atmosphere. These measurements furthermore enable highly accurate measurements of ocean topography by providing total column water vapour data for radar path delay correction. The atmospheric temperature profile is characterised at the oxygen molecule absorption frequencies (60 and 118 GHz) and the humidity profile at the water molecule absorption frequencies (23 and 183 GHz). Total column measurements can be achieved by comparing measured radiometric temperatures at atmospheric window channels, such as 90, 130 and 166 GHz. The standard receiver technology for these frequencies was diode mixers with MMIC LNAs being applied at the lower frequencies. The sensitivity of millimetre wave receivers improved significantly with the introduction of the low noise 35 nm gate length InP MMIC amplifiers. We currently achieve 3 dB noise figure at 180 GHz and 2 dB noise figure at 90 GHz with our MMIC low noise amplifiers (LNAs) in room temperature. These amplifiers and the receivers we have built using them made it possible to conduct highly accurate airborne measurement campaigns from the Global Hawk unmanned aerial vehicle, develop millimeter wave internally calibrated radiometers for altimeter radar path delay correction, and build prototypes of large arrays of millimeter receivers for a geostationary interferometric sounder. We use the developed millimeter wave receivers to measure temperature and humidity profiles in the atmosphere and in hurricanes as well as to characterize the path delay error in ocean topography altimetry.

low noise amplifier↗

Technology Maturation for Cloud Ice Radiometers

Global measurements of ice in clouds, both the amount and particle size distribution, are critically needed to reduce uncertainties in global climate models. The retrieval of this information is best achieved with a range of receiver channels across the submillimeter wave range. Advancement of low noise Indium Phosphide (InP) MMIC amplifier technology to 25-nm gate length enabled us to develop miniature submillimeter-wave receivers for a CubeSat scale instrument that achieves 6 km spatial resolution. We developed the 25-nm InP MMICs and radiometer receivers for 240, 310, 380, 670 GHz. The 25-nm InP MMIC technology was thermal vacuum tested to reduce risk for future space mission.

Duffy, Maxwell↗

Prototype development of a Geostationary Synthetic Thinned Aperture Radiometer (GeoSTAR)

Weather prediction and hurricane tracking would greatly benefit of a continuous imaging capability of a hemisphere at millimeter wave frequencies. We are developing a synthetic thinned aperture radiometer (STAR) prototype operating from 50 to 56 GHz as a ground-based testbed to demonstrate the technologies needed to do full earth disk atmospheric temperature soundings from Geostationary orbit with very high spatial resolution. The prototype consists of a Y-array of 24 MMIC receivers that are compact units implemented with low noise InP MMIC LNAs, second harmonic I-Q mixers, low power IF amplifiers and include internal digital bias control with serial line communication to enable low cost testing and system integration. Furthermore, this prototype STAR includes independent LO and noise calibration signal phase switching circuitry for each arm of the Y-array to verify the operation and calibration of the system.

Millimeter wave low noise amplifiers↗

Medium power amplifiers covering 90 - 130 GHz for telescope local oscillators

This paper describes a set of power amplifier (PA) modules containing InP High Electron Mobility Transistor (HEMT) Monolithic Millimeter-wave Integrated Circuit (MMIC) chips. The chips were designed and optimized for local oscillator sources in the 90-130 GHz band for the Atacama Large Millimeter Array telescope. The modules feature 20-45 mW of output power, to date the highest power from solid state HEMT MMIC modules above 110 GHz.

coplanar waveguides↗

High Frequency PIN-Diode Switches for Radiometer Applications

Internally calibrated radiometers are needed for ocean topography and other missions. Typically internal calibration is achieved with Dicke switching as one of the techniques. We have developed high frequency single-pole double-throw (SPDT) switches in the form of monolithic microwave integrated circuits (MMIC) that can be easily integrated into Dicke switched radiometers that utilize microstrip technology. In particular, the switches we developed can be used for a radiometer such as the one proposed for the Surface Water and Ocean Topography (SWOT) Satellite Mission whose three channels at 92, 130, and 166 GHz would allow for wet-tropospheric path delay correction near coastal zones and over land. This feat is not possible with the current Jason-class radiometers due to their lower frequency signal measurement and thus lower resolution. The MMIC chips were fabricated at NGST using their InP PIN diode process and measured at JPL using high frequency test equipment. Measurement and simulation results will be presented.

PIN-diode↗

Configuration study for a 30 GHz monolithic receive array: Technical assessment

The current status of monolithic microwave integrated circuits (MMICs) in phased array feeds is discussed from the point of view of cost performance, reliability, and design considerations. Transitions to MMICs, compatible antenna radiating elements and reliability considerations are addressed. Hybrid antennas, feed array antenna technology, and offset reflectors versus phased arrays are examined.

Nester, W. H.↗

Compensation of reflector surface distortions using conjugate field matching

The feasibility of compensating for reflector surface distortions has been investigated. The performance characteristics (gain, sidelobe level, null location, beamwidth, etc.) of space communication reflector antenna systems degrade as the reflector surface distorts due to thermal effects from a varying solar flux. The technique reported here will maintain the design radiation performance independently of thermal effects on the reflector surface. With the advent of monolithic microwave integrated circuits (MMIC), a greater flexibility in array-fed reflector system design can be achieved. MMIC arrays provides independent control of amplitude and phase for each of many radiating elements of the feed array. The conjugate field matching technique provide a basis for obtaining the required element excitations under surface distortion for maintaining the design radiation performance. It is assumed that the surface characteristics (x, y, z, first derivatives, and second derivatives) under distortion are known.

Acosta, R. J.↗