Development of a microelectronic module Interim scientific report, 1 Apr. 1967 - 31 Mar. 1968
Gallium arsenide n-p-n transistors using different crystal materials and fabrication technologies
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Gallium arsenide n-p-n transistors using different crystal materials and fabrication technologies
Integrated S band parametric amplifier design and fabrication using microstrip techniques, describing times four multiplier
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Handbook provides general guidance to the technology of integrated circuits for readers with little or no experience. It does not supply solutions to specific design problems, but is heavily footnoted to the original sources.
Ion implantation process for fabricating active devices in high bandgap semiconductor materials for high temperature operation
Laminar flow benches for particulate contamination control in air flow
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Heat treating insulating crystals in gaseous hydrogen atmosphere produce resistive device which is temperature-independent from 77 to 295 degrees K. Increasing the concentration of hydrogen within the crystal yields semiconductor, hybrid, and metallic conduction characteristics which are combined with a depletion layer at the surface.
Qualification test program for digital monolithic integrated circuit devices
Ion implantation techniques for p-n junction diodes of silicon carbide and gallium arsenide
Microbonding techniques used in hybrid microcircuit production
Ion implantation forming of conducting layers and p-n junctions in gallium arsenide and silicon carbide
Negative-resistance circuits with possible space flight applications are discussed. The basic design approach is to use impedance rotation, i.e., the conversion from capacitance to negative resistance, and from resistance to inductance by the phase shift of the transistor current gain at high frequencies. The subjects discussed in detail are the following: hybrid fabrication of VHF and UHF negative-resistance stages with lumped passive elements; formulation of measurement techniques to characterize transistors and to extend the frequency of negative-resistance transistor amplifiers to higher microwave frequencies; and derivation of transistor characteristics required to increase the frequency range of negative-resistance transistor stages.
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Parts are securely held on sealed, printed circuit board that is both package and test fixture. Parts can be handled, stored, and tested in sealed package.
In the assembly of hybrid microcircuits, passive and active discrete chip components are attached by epoxy cements and by solders. This study was initiated to determine the integrity of such attachments. Alumina substrates were subjected to a group of thermal and mechanical test environments defined by test methods in MIL-STD-883. Lot samples of substrates with assembly variations were subjected to separately applied testing and to serial testing. These test methods were applied sequentially to the same lot of substrates. Epoxy cements were generally satisfactory with respect to separate tests, although sequential tests severely degraded epoxy bond strengths of all types. Bond strengths to unglazed substrates were slightly superior to those of the same components on glazed types. Solder joints were vulnerable to catastrophic failure in several environments, especially temperature cycling and thermal shock. Vibration and impact shock also produced solder joint failures.
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Information for making high quality ultrasonic wire bonds is presented as well as data to provide a basic understanding of the ultrasonic systems used. The work emphasizes problems and methods of solving them. The required measurement equipment is first introduced. This is followed by procedures and techniques used in setting up a bonding machine, and then various machine- or operator-induced reliability problems are discussed. The characterization of the ultrasonic system and its problems are followed by in-process bonding studies and work on the ultrasonic bonding (welding) mechanism. The report concludes with a discussion of various effects of bond geometry and wire metallurgical characteristics. Where appropriate, the latest, most accurate value of a particular measurement has been substituted for an earlier reported one.