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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2015

Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3} oxide

We have studied current-voltage (I-V) characteristics of α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3}, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔV{sub P}) 0.345(± 0.001) V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (∼500-700%), magnetoresistance (70-135 %) and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

36 MATERIALS SCIENCE↗
DOE OSTI2011

Grain boundary mediated leakage current in polycrystalline HfO2 films

In this work, we combine conductive atomic force microscopy (CAFM) and first principles calculations to investigate leakage current in thin polycrystalline HfO2 films. A clear correlation between the presence of grain boundaries and increased leakage current through the film is demonstrated. The effect is a result of a number of related factors, including local reduction in the oxide film thickness near grain boundaries, the intrinsic electronic properties of grain boundaries which enhance direct tunnelling relative to the bulk, and segregation of oxygen vacancy defects which increase trap assisted tunnelling currents. These results highlight the important role of grain boundaries in determining the electrical properties of polycrystalline HfO2 films with relevance to applications in advanced logic and memory devices.

42 ENGINEERING↗
DOE OSTI2015

Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes

The low-frequency noise properties of Pt-indium gallium zinc oxide (IGZO) Schottky diodes at different forward biases are investigated. The IGZO layer and Pt contact were deposited by RF sputtering at room temperature. The diode showed an ideality factor of 1.2 and a barrier height of 0.94 eV. The current noise spectral density exhibited 1/f behavior at low frequencies. The analysis of the current dependency of the noise spectral density revealed that for the as-deposited diode, the noise followed Luo's mobility and diffusivity fluctuation model in the thermionic-emission-limited region and Hooge's empirical theory in the series-resistance-limited region. A low Hooge's constant of 1.4 × 10{sup −9} was found in the space-charge region. In the series-resistance-limited region, the Hooge's constant was 2.2 × 10{sup −5}. After annealing, the diode showed degradation in the electrical performance. The interface-trap-induced noise dominated the noise spectrum. By using the random walk model, the interface-trap density was obtained to be 3.6 × 10{sup 15 }eV{sup −1 }cm{sup −2}. This work provides a quantitative approach to analyze the properties of Pt-IGZO interfacial layers. These low noise properties are a prerequisite to the use of IGZO Schottky diodes in switch elements in memory devices, photosensors, and mixer diodes.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2011

Fundamental quantum limits on phase-insensitive linear amplification and phase conjugation in a practical framework

We present experimentally testable quantum limitations on the phase-insensitive linear amplification and phase conjugation with respect to the transformation of a Gaussian-distributed set of coherent states following the footing to assess the success of continuous-variable quantum teleportation and quantum memory devices. The results enable us to compare the real device with the quantum-limited device via the feasible input of coherent states.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Formation of multilayered magnetic nanotracks with perpendicular anisotropy via deoxidization using ion irradiation on ultraviolet-imprinted intaglio nanostructures

We proposed a method to fabricate perpendicular magnetic nanotracks in the cobalt oxide/palladium multilayer films using UV-nanoimprinting lithography and low-energy hydrogen-ion irradiation. This is a method to magnetize UV-imprinted intaglio nanotracks via low-energy hydrogen ion irradiation, resulting the irradiated region are magnetically separated from the non-irradiated region. Multilayered magnetic nanotracks with a line width of 140 nm, which were fabricated by this parallel process without additional dry etching process, exhibited a saturation magnetization of 290 emu cm{sup −3} and a coercivity of 2 kOe. This study demonstrates a cost-effective mass production of multilayered perpendicular magnetic nanotracks and offers the possibility to achieve high density storage and memory devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Hydrogen doping in HfO{sub 2} resistance change random access memory

The structures and energies of hydrogen-doped monoclinic hafnium dioxide were calculated using density-functional theory. The electronic interactions are described within the LDA + U formalism, where on-site Coulomb corrections are applied to the 5d orbital electrons of Hf atoms and 2p orbital electrons of the O atoms. The effects of charge state, defect-defect interactions, and hydrogenation are investigated and compared with experiment. It is found that hydrogenation of HfO{sub 2} resistance-change random access memory devices energetically stabilizes the formation of oxygen vacancies and conductive vacancy filaments through multiple mechanisms, leading to improved switching characteristic and device yield.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Engineering helimagnetism in MnSi thin films

Magnetic skyrmion materials have the great advantage of a robust topological magnetic structure, which makes them stable against the superparamagnetic effect and therefore a candidate for the next-generation of spintronic memory devices. Bulk MnSi, with an ordering temperature of 29.5 K, is a typical skyrmion system with a propagation vector periodicity of ∼18 nm. One crucial prerequisite for any kind of application, however, is the observation and precise control of skyrmions in thin films at room-temperature. Strain in epitaxial MnSi thin films is known to raise the transition temperature to 43 K. Here we show, using magnetometry and x-ray spectroscopy, that the transition temperature can be raised further through proximity coupling to a ferromagnetic layer. Similarly, the external field required to stabilize the helimagnetic phase is lowered. Transmission electron microscopy with element-sensitive detection is used to explore the structural origin of ferromagnetism in these Mn-doped substrates. Our work suggests that an artificial pinning layer, not limited to the MnSi/Si system, may enable room temperature, zero-field skyrmion thin-film systems, thereby opening the door to device applications.

36 MATERIALS SCIENCE↗
DOE OSTI2019

MAC: Memory Access Coalescer for 3D-Stacked Memory

Emerging data-intensive applications, such as graph analytics and data mining, exhibit irregular memory access patterns. Research has shown that with these memory-bound applications, traditional cache-based processor architectures, which exploit locality and regular patterns to mitigate the memory-wall issue, are inefficient. Meantime, novel 3D-stacked memory devices, such as Hybrid Mem- ory Cube (HMC) and High Bandwidth Memory (HBM), promise significant increases in bandwidth that appear extremely appealing for memory-bound applications. However, conventional memory interfaces designed for cache-based architectures and JEDEC DDR devices fit poorly with the 3D-stacked memory, which leads to significant under-utilization of the promised high bandwidth. As a response to these issues, in this paper we propose MAC (Memory Access Coalescer), a coalescing unit for the 3D-stacked memory. We discuss the design and implementation of MAC, in the context of a custom designed cache-less architecture targeted at data-intensive, irregular applications. Through a custom simulation infrastructure based on the RISC-V toolchain, we show that MAC achieves a coalescing efficiency of 52.85% on average. It improves the performance of the memory system by 60.73% on average for a large set of irregular workloads.

Wang, Xi↗
DOE OSTI2016

Effect of Zr{sup 4+} substitution on ferroelectric and dielectric properties of BaTiO{sub 3} ceramics

A lead-free system, BaTi{sub (1−x)}Zr{sub x}O{sub 3}, with x varying from 0.00 to 0.15 (in steps of 0.05), were prepared by solid state reaction method. X-ray diffraction study confirms the perovskite-type tetragonal structure with, a = 4.003 Å and c = 3.998 Å for pure BaTiO{sub 3} and a = 4.027 Å and c = 4.023 Å for pure BaTi{sub 0.85}Zr{sub 0.15}O{sub 3}. Microstructure changes, with Zr{sup 4+} in BaTi{sub (1−x)}Zr{sub x}O{sub 3}, are studied using scanning electron microscopy (SEM). Dielectric constant measurements show the maximum dielectric constant value (~ 9445) for a composition, BaTi{sub 0.85}Zr{sub 0.15}O{sub 3}. P-E loop measurements support ferroelectric nature for all the samples and maximum polarization value (~10.55 µC/cm{sup 2}) with squareness ratio ~0.6, at electric field 7.11 kV/cm, is obtained for BaTi{sub 0.85}Zr{sub 0.15}O{sub 3} composition. All the measured properties suggest that the BaTi{sub 0.85}Zr{sub 0.15}O{sub 3} may be suitable for memory device applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Probing electron density across Ar{sup +} irradiation-induced self-organized TiO{sub 2−x} nanochannels for memory application

The variation of electron density in TiO{sub 2−x} nanochannels, exhibiting resistive switching phenomenon, produced by Ar{sup +} ion-irradiation at the threshold fluence of 5 × 10{sup 16} ions/cm{sup 2} is demonstrated by X-ray reflectivity (XRR). The transmission electron microscopy reveals the formation of nanochannels, while the energy dispersive X-ray spectroscopy confirms Ti enrichment near the surface due to ion-irradiation, in consistent with the increase in electron density by XRR measurements. Such a variation in Ti concentration indicates the evolution of oxygen vacancies (OVs) along the TiO{sub 2−x} nanochannels, and thus paves the way to explain the operation and performance of the Pt/TiO{sub 2−x}/Pt-based memory devices via OV migration.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Nanosecond switching in GeSe phase change memory films by atomic force microscopy

Nanosecond scale threshold switching is investigated with conducting atomic force microscopy (AFM) for an amorphous GeSe film. Switched bits exhibit 2–3 orders of magnitude variations in conductivity, as demonstrated in phase change based memory devices. Through the nm-scale AFM probe, this crystallization was achieved with pulse durations of as low as 15 ns, the fastest reported with scanning probe based methods. Conductance AFM imaging of the switched bits further reveals correlations between the switched volume, pulse amplitude, and pulse duration. The influence of film heterogeneities on switching is also directly detected, which is of tremendous importance for optimal device performance.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

IRIS: A Performance-Portable Framework for Cross-Platform Heterogeneous Computing

From edge to exascale, computer architectures are becoming more heterogeneous and complex. The systems typically have fat nodes, with multicore CPUs and multiple hardware accelerators such as GPUs, FPGAs, and DSPs. This complexity is causing a crisis in programming systems and performance portability. Several programming systems are working to address these challenges, but the increasing architectural diversity is forcing software stacks and applications to be specialized for each architecture. As we show, all of these approaches critically depend on their software framework for discovery, execution, scheduling, and data orchestration. To address this challenge, we believe that a more agile and proactive software framework is essential to increase performance portability and improve user productivity. To this end, we have designed and implemented IRIS: a performance-portable framework for cross-platform heterogeneous computing. IRIS can discover available resources, manage multiple diverse programming platforms (e.g., CUDA, Hexagon, HIP, Level Zero, OpenCL, OpenMP) simultaneously in the same execution, respect data dependencies, orchestrate data movement proactively, and provide for user-configurable scheduling. To simplify data movement, IRIS introduces a shared virtual device memory with relaxed consistency among different heterogeneous devices. IRIS also adds an automatic kernel workload partitioning technique using the polyhedral model so that it can resize kernels for a wide range of devices. Our evaluation on three architectures, ranging from Qualcomm Snapdragon to a Summit supercomputer node, shows that IRIS improves portability across a wide range of diverse heterogeneous architectures with negligible overhead.

97 MATHEMATICS AND COMPUTING↗
NASA NTRS2010

Radiation-Hardened Solid-State Drive

A method is provided for a radiationhardened (rad-hard) solid-state drive for space mission memory applications by combining rad-hard and commercial off-the-shelf (COTS) non-volatile memories (NVMs) into a hybrid architecture. The architecture is controlled by a rad-hard ASIC (application specific integrated circuit) or a FPGA (field programmable gate array). Specific error handling and data management protocols are developed for use in a rad-hard environment. The rad-hard memories are smaller in overall memory density, but are used to control and manage radiation-induced errors in the main, and much larger density, non-rad-hard COTS memory devices. Small amounts of rad-hard memory are used as error buffers and temporary caches for radiation-induced errors in the large COTS memories. The rad-hard ASIC/FPGA implements a variety of error-handling protocols to manage these radiation-induced errors. The large COTS memory is triplicated for protection, and CRC-based counters are calculated for sub-areas in each COTS NVM array. These counters are stored in the rad-hard non-volatile memory. Through monitoring, rewriting, regeneration, triplication, and long-term storage, radiation-induced errors in the large NV memory are managed. The rad-hard ASIC/FPGA also interfaces with the external computer buses.

Sheldon, Douglas J.↗
NASA NTRS2016

Reliability Characterization of TaOx-Based Commercial ReRAM in Combination with Radiation

We present reliability data combined with total dose gamma radiation for one of the first commercially available resistive memory devices. These Tantalum Oxide (TaOX)-based resistive memory chips demonstrate operation in dynamic program and erase testing up to ~130 Krad(Si) of 60Co gamma dose. In static and unbiased conditions, the stored data in the memory cells were able to withstand up to 50Mrad(Si) of exposure. The access circuitry, though, seemed less robust to gamma radiation and was able to operate only up to a total dose of 3Mrad(Si). Post exposure reliability as indicated by endurance, cycling error rate, and data retention tests showed no detectable impact from the combination with prior gamma irradiation. Overall, the total dose radiation tolerance of the commercial TaOx-based resistive memory chip appears to be higher than flash memory chips and in agreement with prior tests conducted with single cell resistive memories.

total ionizing dose↗
DOE OSTI2023

Data migration schedule prediction using machine learning

Various embodiments provide for one or more processor instructions and memory instructions that enable a memory sub-system to predict a schedule for migrating data between memory devices, which can be part of a memory sub-system.

Roberts, David Andrew↗
DOE OSTI2011

Effect of the top electrode materials on the resistive switching characteristics of TiO{sub 2} thin film

Various metals, such as Pt, stainless steel (SUS), Al, Ni, and Ti, were used as a top electrode (TE) to evaluate the dependency of the resistive switching characteristics on the TE of the metal/TiO{sub 2}/Pt structure. The variation of the chemical composition of TiO{sub 2} in the metal/TiO{sub 2}/Pt structure before and after switching was examined to identify the factors affecting the resistive switching characteristics of the samples with various TE materials. In the case of TE/TiO{sub 2}/Pt structures showing unstable resistive switching behavior, e.g., those with the Al, Ni, and Ti TEs, secondary ion mass spectrometry revealed an increase in the oxygen concentration at the interface area between the TE metal and TiO{sub 2}. This suggests that the oxidation reaction at the interface between the TE metal and TiO{sub 2} might cause the TE/TiO{sub 2}/Pt structure to exhibit unstable resistive switching characteristics. According to these results, the oxidation reaction at the interface between the metal TE and TiO{sub 2} thin film is a primary factor affecting the resistive switching characteristics of TiO{sub 2}-based Resistive Random Access Memory devices.

36 MATERIALS SCIENCE↗
DOE OSTI2010

Processing and Switching Behavior of Multiferroic (Bi{sub 0.7}Dy{sub 0.3}FeO{sub 3}) Microstructure Arrays

Multiferroic systems, which exhibit coexistence of both ferroelectric and ferromagnetic ordering at room temperature, are of great importance for a variety of device applications. Due to coupling between the two order parameters, it is possible to bring polarization in the multiferroic systems by either means (applying electric or magnetic field). We have been successful in developing material (Bi{sub 0.7}Dy{sub 0.3}FeO{sub 3}) which exhibits the multiferroic behavior at room temperature with significant coupling in bulk as well as thin films. We therefore propose to develop a procedure to fabricate multiple memory devices using this new compound.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Investigation of dominant spin wave modes by domain walls collision

Spin wave emission due to field-driven domain wall (DW) collision has been investigated numerically and analytically in permalloy nanowires. The spin wave modes generated are diagonally symmetric with respect to the collision point. The non-propagating mode has the highest amplitude along the middle of the width. The frequency of this mode is strongly correlated to the nanowire geometrical dimensions and is independent of the strength of applied field within the range of 0.1 mT to 1 mT. For nanowire with film thickness below 5 nm, a second spin wave harmonic mode is observed. The decay coefficient of the spin wave power suggests that the DWs in a memory device should be at least 300 nm apart for them to be free of interference from the spin waves.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗