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At least 235 records · Page 13

Four-micron period ion-implanted bubble test circuits

Packaged magnetic bubble test circuits made with 4-micron period ion-implanted circuits were operated over -55 to +110 C. The circuits used bidirectional transfer and nondestructive detection and were made on bismuth-containing magnetic garnet films. Passivated circuits that incorporated an improved transfer conductor design were operated on films with higher Gilbert damping parameters. Potential advantages to using films with lower bubble aspect ratios for ion-implanted circuits are discussed. However nondestructive read-out detection was not realized with these 'flat' bubbles.

Nelson, T. J.↗

Implantable, Ingestible Electronic Thermometer

Small quartz-crystal-controlled oscillator swallowed or surgically implanted provides continuous monitoring of patient's internal temperature. Receiver placed near patient measures oscillator frequency, and temperature inferred from previously determined variation of frequency with temperature. Frequency of crystal-controlled oscillator varies with temperature. Circuit made very small and implanted or ingested to measure internal body temperature.

Kleinberg, Leonard↗

Characterization of NTD germanium and ion-implanted Si bolometers at 0.3K and 0.1K

Bolometer elements were built and tested using NTD germanium and ion-implanted Si thermometer elements. The thermal links were made using aluminum wires and NbC(x)N(y) coated carbon fibers. The temperature dependence of the detector resistance, lead thermal conductivity, and heat capacity were measured. The dependence of the detector resistance on applied electric field was also measured. This, combined with the current-voltage curve for the detector, allowed the calculation of the detector responsivity. Known amounts of energy were deposited into the detector by allowing X-rays from the decay of Fe-55 to be thermalized in the detector. In the best-measured case, the predicted pulse height/measured height was 1.04 + or - .05. The noise at frequencies above 25 Hz in the NTD Ge was near that predicted by thermodynamics. The noise below 25 Hz has a 1/f character and may be in the carbon fiber/bolometer junction. The implanted detectors show some 1/f noise which depends on the total thermometer volume. Comparison between noise measurements and theory will be presented.

Moseley, H.↗

Stoichiometric disturbances in compound semiconductors due to ion implantation

A method is developed to calculate the depth distribution of the local stoichiometric disturbance (SD) resulting from ion implantation in binary-compound substrates. The calculation includes first-order recoils considering projected range straggle of projectiles and recoils and lateral straggle of recoils. The method uses tabulated final-range statistics to infer the projectile range distributions at intermediate energies. This approach greatly simplifies the calculation with little compromise on accuracy as compared to existing procedures. As an illustration, the SD profile is calculated for implantation of boron, silicon, and aluminum in silicon carbide. The results for the latter case suggest that the SD may be responsible for otherwise unexplained distortions in the annealed aluminum profile. A comparison with calculations by other investigators using the Boltzmann transport equation shows good agreement.

Avila, R. E.↗

Biofeedback With Implanted Blood-Pressure Device

Additional uses found for equipment described in "Implanted Blood-Pressure-Measuring Device" (GSC-13042). Implanted with device electronic circuitry that measures, interprets, and transmits data via inductive link through patient's skin to external receiver. Receiver includes audible alarm generator activated when patient's blood pressure exceeds predetermined threshold. Also included in receiver a blood-pressure display, recorder, or both, for use by patient or physician.

Rischell, Robert E.↗

GaAs/GaAlAs distributed Bragg reflector laser with a focused ion beam, low dose dopant implanted grating

The performance of a GaAs/GaAlAs distributed Bragg reflector (DBR) laser using a focused ion beam implanted grating (FIB-DBR) is reported for the first time. Stripes of Si(2+) with a period of 2300 A and a dose about 10 to the 14th/sq cm are directly implanted into the passive large optical cavity layer to provide the distributed feedback. Surface-emitting light from the second-order grating is observed. Threshold current of 110 mA and single DBR mode operation from 20 to 40 C are obtained. The wavelength tuning rate with temperature is 0.8 A/C. The coupling coefficient is estimated to be 15/cm. The results show that FIB technology is practical for distributed feedback and DBR lasers and optoelectronic integrated circuits.

Wu, M. C.↗

Mandrels For Microtextured Small-Vessel Implants

Research shows artificial blood-vessel and heart-valve implants made more compatible with their biological environments by use of regularly microtextured surfaces. In new manufacturing process, ion beam etches patterned array of small pillars on mandrel used to mold tubular plastic implant. Pillars create tiny regularly spaced holes in inner surface of tube. Holes expected to provide sites for attachment of healthy lining. Polytetrafluoroethylene (PTFE) used as mandrel material because it can be etched by ion beam.

Deininger, William D.↗

Photoreflectance Study of Boron Ion-Implanted (100) Cadmium Telluride

Ion implanted (100) cadmium telluride was studied using the contactless technique of photoreflectance. The implantations were performed using 50- to 400-keV boron ions to a maximum dosage of 1.5 x 10(16)/sq cm, and the annealing was accomplished at 500 C under vacuum. The spectral measurements were made at 77 K near the E(0) and E(1) critical points; all the spectra were computer-fitted to Aspnes' theory. The spectral line shapes from the ion damaged, partially recovered and undamaged, or fully recovered regions could be identified, and the respective volume fraction of each phase was estimated.

Amirtharaj, P. M.↗

Ion-implanted extrinsic Ge photodetectors with extended cutoff wavelength

Far-IR Ge detectors fabricated using boron ion implantation are shown to exhibit operating characteristics compatible with requirements for low background applications. Device parameters such as low dark currents, reasonably good sensitivity, and extended wavelength threshold demonstrate that ion-implanted Ge far-IR detectors offer promise for use in astrophysics instrumentation.

Wu, I. C.↗

Oxygen isotopes implanted in the LDEF spacecraft

Depth profiles of O-16 and O-18/O-16 were measured on stainless steel nuts and copper sheet (from a grounding strap) recovered from the leading edge of LDEF (Tray E10). The measurements were obtained by dynamic SIMS (secondary ion mass spectrometry) using a VG Isolab 54 ion microprobe. Plots of O-18/O-16 against time, show large depletions of up to a factor of 2 compared to the O-18/O-16 value at sea level. The O-16 current decreases by 2 orders of magnitude in the interior of the metal, and the corresponding profile of anomalous O-16 is strongly peaked in the outer few tens of nanometers of the surface. This depth scale is a tentative one based on estimated sputtering rates. Plots of O-18/O-16 against 1/O-16 should be linear if two isotopically distinct components, one of variable concentration (orbital component) and one of fixed concentration (normal oxygen), are mixed. Data to be presented at the meeting show departures from linearity which result from variability in the concentration of normal oxygen, but may also arise from the implantation of oxygen with a range of fractionation due to the decaying orbit of the LDEF, sputtering of the surface by atomic oxygen, and the different momenta of the two isotopes due to their equal velocities. The potential for using this method as a means of identifying exposure to low-Earth orbit, de-convoluting the effects of space exposure from terrestrial contamination, and using the implanted anomolous oxygen as a means of studying the atomic oxygen density and upper atmosphere temperature height profile will be discussed at the meeting.

Saxton, J. M.↗

Stress analysis of a rectangular implant in laminated composites using 2-D and 3-D finite elements

An analysis method using the FEM based on the Hellinger-Reissner variation principle has been developed to determine the 3-D stresses and displacements near a rectangular implant inside a laminated composite material. Three-dimensional elements are employed in regions where the interlaminar stress is considered to be significant; 2-D elements are used in other areas. Uniaxially loaded graphite-epoxy laminates have been analyzed; the implant was modeled as four plies of 3501/6 epoxy located in the middle of the laminate. It is shown that the interlaminar stresses are an order of magnitude lower than the stress representing the applied far-field load. The stress concentration factors of both the interlaminar and in-plane stresses depend on the stacking sequence of the laminate.

Chow, Wai T.↗

Mechanism for diamond nucleation and growth on single crystal copper surfaces implanted with carbon

The nucleation and growth of diamond crystals on single-crystal copper surfaces implanted with carbon ions is studied. Microwave plasma-enhanced chemical-vapor deposition is used for diamond growth. The single-crystal copper substrates were implanted either at room or elevated temperature with carbon ions prior to diamond nucleation. This procedure leads to the formation of a graphite film on the copper surface which greatly enhances diamond crystallite nucleation. A simple lattice model is constructed for diamond growth on graphite as 111 line (diamond) parallel to 0001 line (graphite) and 110 line (diamond) parallel to 1 1 -2 0 (graphite).

Ong, T. P.↗

Oxygen isotopes implanted in the LDEF spacecraft

Secondary ion mass spectrometry was used to study oxygen implanted in the surface of copper from the Long Duration Exposure Facility (LDEF). Oxidation that occurred in orbit shows a characteristic oxygen isotope composition, depleted in O-18. The measured depletion is comparable to the predicted depletion (45 percent) based on a model of the gravitational separation of the oxygen isotopes. The anomalous oxygen was contained within 10nm of the surface. Tray E10 was calculated to have received 5.14 x 10(exp 21) atoms of oxygen cm(sup -2) during the LDEF mission and so there is sufficient anomalous implanted oxygen present in the surface to obtain a reliable isotopic profile.

Saxton, J. M.↗

Shuttle to Space Station. Heart Assist Implant. Hubble Update. X-30 Mock-Up

Shuttle to Space Station, Heart Assist Implant, Hubble Update, and X-30 Mockup are the four parts that are discussed in this video. The first part, Shuttle to Space Station, is focussed on the construction and function of the Space Station Freedom. While part two, Heart Assist Implant, discusses a newly developed electromechanical device that helps to reduce heart attack by using electric shocks. Interviews with the co-inventor and patients are also included. Brief introduction to Hubble Telescope, problem behind its poor image quality (mirror aberration), and the plan to correct this problem are the three issues that are discussed in part three, Hubble Update. The last part, part four, reviews the X-30 Mockup designed by the staff and students of Mississippi State University.

Source record↗

Ion-Implanted Diamond Films and Their Tribological Properties

This paper reports the physical characterization and tribological evaluation of ion-implanted diamond films. Diamond films were produced by microwave plasma, chemical vapor deposition technique. Diamond films with various grain sizes (0.3 and 3 microns) and roughness (9.1 and 92.1 nm r.m.s. respectively) were implanted with C(+) (m/e = 12) at an ion energy of 160 eV and a fluence of 6.72 x 10(exp 17) ions/sq cm. Unidirectional sliding friction experiments were conducted in ultrahigh vacuum (6.6 x 10(exp -7)Pa), dry nitrogen and humid air (40% RH) environments. The effects of C(+) ion bombardment on fine and coarse-grained diamond films are as follows: the surface morphology of the diamond films did not change; the surface roughness increased (16.3 and 135.3 nm r.m.s.); the diamond structures were damaged and formed a thin layer of amorphous non-diamond carbon; the friction coefficients dramatically decreased in the ultrahigh vacuum (0.1 and 0.4); the friction coefficients decreased slightly in the dry nitrogen and humid air environments.

Wu, Richard L. C.↗

Electronic and Vibrational Spectra of InP Quantum Dots Formed by Sequential Ion Implantation

We have performed sequential ion implantation of indium and phosphorus into silica combined with controlled thermal annealing to fabricate InP quantum dots in a dielectric host. Electronic and vibrational spectra were measured for the as-implanted and annealed samples. The annealed samples show a peak in the infrared spectra near 320/cm which is attributed to a surface phonon mode and is in good agreement with the value calculated from Frolich's theory of surface phonon polaritons. The electronic spectra show the development of a band near 390 nm that is attributed to quantum confined InP.

Hall, C.↗

Method for Fabricating Soft Tissue Implants with Microscopic Surface Roughness

A method for fabricating soft tissue implants using a mold. The cavity surface of an initially untextured mold. made of an organic material such as epoxy. is given a thin film coating of material that has pinholes and is resistant to atomic particle bombardment. The mold cavity surface is then subjected to atomic particle bombardment, such as when placed in an isotropic atomic oxygen environment. Microscopic depressions in the mold cavity surface are created at the pinhole sites on the thin film coating. The thin film coating is removed and the mold is then used to cast the soft tissue implant. The thin film coating having pinholes may be created by chilling the mold below the dew point such that water vapor condenses upon it; distributing particles, that can partially dissolve and become attached to the mold cavity surface, onto the mold cavity surface; removing the layer of condensate, such as by evaporation; applying the thin film coating over the entire mold surface; and, finally removing the particles, such as by dissolving or brushing it off. Pinholes are created in the thin film coating at the sites previously occupied by the particles.

Banks, Bruce A.↗

Raman and FTIR Studies of Silicon Carbide Surface Damage from Palladium Implantation in Presence of Hydrogen

The ion implantation in a crystal such as silicon carbide will cause both damage in the ion track and in the substrate at the end of the ion track. We used both keV, and MeV Pd ions in fabricating electronic chemical sensors in silicon carbide, which can operate at elevated temperatures. In order to study the feasibility of fabricating an optical chemical sensor (litmus sensor), we need to understand the optical behavior of the embedded damage in the presence of hydrogen, as well as the potential chemical interaction of silicon carbide broken lattice bonds with the hydrogen dissociated from gas by palladium. Implanted samples of silicon carbide were studied using both Raman spectroscopy and FTIR (Fourier Transform-Infrared). The results of this work will be presented during the meeting.

Muntele, I.↗