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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Ion-beam-sputter modification of the surface morphology of biological implants

The surface chemistry and texture of materials used for biological implants may significantly influence their performance and biocompatibility. Recent interest in the microscopic control of implant surface texture has led to the evaluation of ion-beam sputtering as a potentially useful surface roughening technique. Ion sources, similar to electron-bombardment ion thrusters designed for propulsive applications, are used to roughen the surfaces of various biocompatible alloys or polymer materials. These materials are typically used for dental implants, orthopedic prostheses, vascular prostheses, and artificial heart components. Masking techniques and resulting surface textures are described along with progress concerning evaluation of the biological response to the ion-beam-sputtered surfaces.

Weigand, A. J.↗
DOE OSTI2024

The bond energy of UN + : Guided ion beam studies of the reactions of U + with N 2 and NO

In this work, a guided ion beam tandem mass spectrometer was used to study the reactions of U + with N 2 and NO. Reaction cross sections were measured over a wide range of energy for both systems. In each reaction, UN + is formed by an endothermic process, thereby enabling the direct measurement of the threshold energy and determination of the UN + bond dissociation energy. For the reaction of U + + N 2 , a threshold energy (E 0 ) of 4.02 ± 0.11 eV was measured, leading to D 0 (UN + ) = 5.73 ± 0.11 eV. The reaction of U + + NO yields UO + through an exothermic, barrierless process that proceeds with 94 ± 23% efficiency at the lowest energy. Analysis of the endothermic UN + cross section in this reaction provides E 0 = 0.72 ± 0.11 eV and, therefore, D 0 (UN + ) = 5.78 ± 0.11 eV. Averaging the values obtained from both reactions, we report D 0 (UN + ) = 5.76 ± 0.13 eV as our best value (uncertainty of two standard deviations). Combined with precise literature values for the ionization energies of U and UN, we also derive D 0 (UN) = 5.86 ± 0.13 eV. Both bond dissociation energies agree well with high-level theoretical treatments in the literature. The formation of UN + in reaction of U + with NO also exhibits a considerable increase in reaction probability above ~3 eV. Theory suggests that this may be consistent with the formation of UN + in excited quintet spin states, which we hypothesize are dynamically favored because the number of 5f electrons in reactants and products is conserved.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1982

Ion beam sputter deposited diamond like films

A single argon ion beam source was used to sputter deposit carbon films on fused silica, copper, and tantalum substrates under conditions of sputter deposition alone and sputter deposition combined with simultaneous argon ion bombardment. Simultaneously deposited and ion bombarded carbon films were prepared under conditions of carbon atom removal to arrival ratios of 0, 0.036, and 0.71. Deposition and etch rates were measured for films on fused silica substrates. Resulting characteristics of the deposited films are: electrical resistivity of densities of 2.1 gm/cu cm for sputter deposited films and 2.2 gm/cu cm for simultaneously sputter deposited and Ar ion bombarded films. For films approximately 1700 A thick deposited by either process and at 5550 A wavelength light the reflectance was 0.2, the absorptance was 0.7, the absorption coefficient was 67,000 cm to the -1 and the transmittance was 0.1.

Banks, B. A.↗
NASA NTRS1967

Ion beam sputtering of liquid metals.

Sputtering yields and energy-transfer efficiency measurements by ion beam sputtering of liquid metals indicate no justification for incorporation into low thrustor

METAL PARTICLE↗
DOE OSTI2023

Effects of Focused Ion Beam Lithography on La 2– x Sr x CuO 4 Single Crystals

Focused ion beam (FIB) milling is a mask-free lithography technique that allows the precise shaping of 3D materials on the micron and sub-micron scale. The recent discovery of electronic nematicity in La 2–x Sr x CuO 4 (LSCO) thin films triggered the search for the same phenomenon in bulk LSCO crystals. With this motivation, we have systematically explored FIB patterning of bulk LSCO crystals into micro-devices suitable for longitudinal and transverse resistivity measurements. We found that several detrimental factors can affect the result, ultimately compromising the possibility of effectively using FIB milling to fabricate sub-micrometer LSCO devices, especially in the underdoped regime.

36 MATERIALS SCIENCE↗
NASA NTRS1986

Numerical simulations of auroral plasma processes. I - Ion beams and conics. II - Electric fields

The characteristics of ion beams and conics as seen in two-dimensional numerical simulations in which the plasmas are driven by current sheets of a finite thickness are described. It is shown that the most energetic ions in the simulations have pitch angles near 90 deg, implying a large perpendicular acceleration of the ions. Large perpendicular electric fields, similar to those measured in electrostatic shocks, are mainly confined near the edges of the current sheets, where E-perpendicular is much larger than E-parallel. Double layers with E-perpendicular about equal to, and spatially separated from, E-parallel form in the interior of wide current sheets. Such double layers have upward electric fields in the region of the upward current. Downward electric fields develop outside the current sheet.

Singh, Nagendra↗
NASA NTRS1977

Ion beam texturing

A microscopic surface texture was created by sputter-etching a surface while simultaneously sputter-depositing a lower sputter yield material onto the surface. A xenon ion-beam source was used to perform the texturing process on samples as large as 3-cm diameter. Textured surfaces have been characterized with SEM photomicrographs for a large number of materials including Cu, Al, Si, Ti, Ni, Fe, stainless steel, Au, and Ag. A number of texturing parameters are studied including the variation of texture with ion-beam powder, surface temperature, and the rate of texture growth with sputter etching time.

Hudson, W. R.↗
DOE OSTI2022

The effects of high energy deuteron ion beam irradiation on the tensile behavior of HT-9

Ion beam implantations are widely performed to understand the effects of irradiation-induced displacement damage on nuclear structural materials. However, the volume of material that can be investigated is often limited by the maximum energies of accelerator facilitates, leading to a limitation in the thickness of samples whose mechanical properties can be evaluated. The Lawrence Berkeley National Laboratory’s 88-Inch Cyclotron offers a wide range of ions and energies, allowing for material ion implantations at larger scales than typical. Four HT-9 SS-J-geometry tensile specimens were polished and then irradiated with deuterons at the 88-Inch Cyclotron to doses of approximately 0.2 dpa prior to small scale tensile testing. Here, the results from this study show irradiation hardening characterized by the tensile test results and black dot irradiation defects. Additionally, a comprehensive look at low temperature irradiations of high-Cr F/M steels is presented and our results show agreement with the available data.

36 MATERIALS SCIENCE↗
NASA NTRS1984

Method of making an ion beam sputter-etched ventricular catheter for hydrocephalus shunt

The centricular catheter comprises a multiplicity of inlet microtubules. Each microtubule has both a large opening at its inlet end and a multiplicity of microscopic openings along its lateral surfaces. The microtubules are perforated by an ion beam sputter etch technique. The holes are etched in each microtubule by directing an ion beam through an electro formed mesh mask producing perforations having diameters ranging from about 14 microns to about 150 microns. This structure assures a reliable means for shunting cerebrospinal fluid from the cerebral ventricles to selected areas of the body.

Banks, B. A.↗
DOE OSTI2026

Toward Automated Plasma Focus Ion Beam Instrument Calibration for Materials Processing [Poster]

To accelerate the transition to autonomous focused ion beam (FIB) microscopy, we require an objective figure of merit (FOM) for assessing calibration. For our purposes, these FOMs related to beam astigmatism, quad, and focus. Intelligent calibration integrated into scripted workflows will enable fully automated sample preparation workflows that produce higher quality samples with less operator time.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2020

Fracture toughness of zirconia with a nanometer size notch fabricated using focused ion beam milling

Zirconia with 3 mol% yttria (3Y-TZP) has been used for dental crowns and bridges due to its excellent mechanical behavior. Performing fracture toughness testing on this nanograin material, however, can be a challenge. For reliable results, fracture toughness testing requires an extremely sharp notch in the test specimen that closely approximates a very sharp crack. This study was to investigate an alternative method to produce nanometer-sized notches, which are less than the average grain size of 3Y-TZP, during the preparation of single-edge V-notched beam specimens and report the resulting fracture toughness value. We present a method using focused ion beam (FIB) milling to fabricate nanometer-sized notches in 3Y-TZP. The notch tip is <100 nm wide, which is smaller than the grain size, and is consistent throughout the thickness of the specimen. The FIB-notched specimens show a much reduced average fracture toughness of 5.64 ± 1.14 MPa√m compared to 8.90 ± 0.23 MPa√m for the specimens without FIB-notches. The FIB-milling did not appear to create any monoclinic phase prior to fracture toughness testing. Fractures originated at the FIB-notches, and the notch size can be readily identified post-mortem using a microscope. A considerable amount of tetragonal-to-monoclinic phase transformation was observed throughout the fracture surfaces. FIB milling provides an alternative method to fabricate nanometer-sized notches that are smaller than the grain size of tetragonal zirconia polycrystal. The fracture toughness determined using FIB-notches was ~5.64 MPa√m, smaller than the specimens with V-notches fabricated using saw blades.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Optical interference for the guidance of cryogenic focused ion beam milling beyond the axial diffraction limit

Cryogenic focused ion beam (Cryo-FIB) milling has become a standard step in the cryogenic electron tomography (Cryo-ET) workflow and is required to thin cells to electron-semitransparency. However, this destructive process removes the vast majority of the cellular material and raises a critical question: what thin section should be preserved for Cryo-ET analysis? Using a tri-coincident cryogenic FIB-SEM-LM system, we identify an interferometric optical response that can be used for targeting lamella production to fluorescently labeled structures with accuracy beyond the diffraction limit. Here we demonstrate this approach using synthetic samples of fluorescent beads embedded in micron-scale droplets of amorphous ice. We then apply the approach to capture virions inside host cells. Successful targeting is confirmed by Cryo-ET revealing clusters of virions in intracellular vesicles. The method does not require any fluorescent fiducials or axial registration and can be performed on any fluorescently labeled structure that is visible in widefield fluorescence microscopy.

Cryoelectron microscopy↗
NASA NTRS1984

Dual ion beam deposition of carbon films with diamondlike properties

A single and dual ion beam system was used to generate amorphous carbon films with diamond like properties. A methane/argon mixture at a molar ratio of 0.28 was ionized in the low pressure discharge chamber of a 30-cm-diameter ion source. A second ion source, 8 cm in diameter was used to direct a beam of 600 eV Argon ions on the substrates (fused silica or silicon) while the deposition from the 30-cm ion source was taking place. Nuclear reaction and combustion analysis indicate H/C ratios for the films to be 1.00. This high value of H/C, it is felt, allowed the films to have good transmittance. The films were impervious to reagents which dissolve graphitic and polymeric carbon structures. Although the measured density of the films was approximately 1.8 gm/cu cm, a value lower than diamond, the films exhibited other properties that were relatively close to diamond. These films were compared with diamondlike films generated by sputtering a graphite target.

Mirtich, M. J.↗
DOE OSTI2021

Fast switching magnet for heavy ion beam separation

This paper presents the design for a switching magnet capable of deflecting 6.5 MeV/u heavy-ion beams with mass-to-charge ratio of 7 by 10 degrees. This magnet can produce variable flat-top pulses from 1 to 30 ms with rise and fall times of less than 0.5 ms at a variable duty cycle of 3–91% into a heavily inductive load. The magnet has a laminated, iron dominated, H-shaped core. Directly-cooled copper pancake coils energize the magnet. We present the magnet design considerations, including the results of extensive computer modeling. Finally, we also present the conceptual engineering design and the studies of magnet yoke fabrication.

47 OTHER INSTRUMENTATION↗
NASA NTRS1976

Fabrication of OSOS cells by neutral ion beam sputtering

Oxide semiconductor on silicon (OSOS) solar cells have been fabricated from various indium tin oxide (In2O3)x(SnO2)1-x compositions sputtered onto p-type single crystal silicon substrates with a neutralized argon ion beam. High temperature processing or annealing was not required. The highest efficiency was achieved with x = 0.91 and was 12 percent. The cells are environmentally rugged, chemically stable, and show promise for still higher efficiencies. Moreover, the ion beam sputtering fabrication technique is amenable to low cost, continuous processing.

Burk, D. E.↗
NASA NTRS1975

Nonlinear transient neutralization theory of ion beams with dissipation

An analytical theory of nonlinear neutralization waves generated by injection of electrons from a grid in the direction of a homogeneous ion beam of uniform velocity and infinite extension is presented. The electrons are assumed to interact with the ions through the self-consistent space charge field and by strong collective interactions. The associated nonlinear boundary-value problem is solved in closed form by means of a von Mises transformation. It is shown that the electron gas moves into the ion space in the form of a discontinuous neutralization wave. This periodic wave structure is damped out by intercomponent momentum transfer, i.e., after a few relaxation lengths a quasi-neutral beam results. The relaxation scale in space agrees with neutralization experiments of rarefied ion beams, if the collective momentum transfer between the electron and ion streams is assumed to be of the Buneman type.

Wilhelm, H. E.↗
NASA NTRS1984

Electromagnetic ion beam instabilities

The linear theory of electromagnetic instabilities driven by an energetic ion beam streaming parallel to a magnetic field in a homogeneous Vlasov plasma is considered. Numerical solutions of the full dispersion equation are presented. At propagation parallel to the magnetic field, there are four distinct instabilities. A sufficiently energetic beam gives rise to two unstable modes with right-hand polarization, one resonant with the beam, the other nonresonant. A beam with sufficiently large T (perpendicular to B)/T (parallel to B) gives rise to the left-hand ion cyclotron anisotropy instability at relatively small beam velocities, and a sufficiently hot beam drives unstable a left-hand beam resonant mode. The parametric dependences of the growth rates for the three high beam velocity instabilities are presented here. In addition, some properties at oblique propagation are examined. It is demonstrated that, as the beam drift velocity is increased, relative maxima in growth rates can arise at harmonics of the ion cyclotron resonance for both right and left elliptically polarized modes.

Gary, S. P.↗