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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Stentgraft Implantation for the Treatment of Postoperative Hepatic Artery Pseudoaneurysm

PurposeHepatic artery pseudoaneurysms are a rare but potentially life-threatening complication of major pancreaticobiliary surgery. We evaluated the safety and efficacy of endovascular stentgraft implantation for the management of such vascular lesions.Materials and MethodsBetween May 2013 and October 2015, ten patients with postoperative hepatic artery pseudoaneurysm, of which eight presented with active hemorrhage, were treated with endovascular stentgraft implantation. All patients had undergone major pancreatic or hepatic surgery before (pylorus-preserving pancreaticoduodenectomy, pancreatectomy, hemihepatectomy, extended hemihepatectomy). The pseudoaneurysms were diagnosed 13–202 days after surgery and were associated with postsurgical complications (e.g., leakage of pancreaticojejunal anastomosis).ResultsIn 9/10 patients, the pseudoaneurysm was completely excluded via stentgraft implantation. In 1/10 patient, the pseudoaneurysm ruptured during the procedure and was successfully treated by immediate open surgery. In 1/10 patient, a second intervention was performed after 6 days because of rebleeding; this was successfully treated by implantation of a second overlapping stentgraft. Mean follow-up time is 51 days. None of the patients died due to stentgraft- or aneurysm-related complications. Further episodes of hemorrhage were not observed. In one patient, clinically asymptomatic complete occlusion of the stentgraft was discovered at follow-up imaging.ConclusionStentgraft implantation is a safe and effective technique to treat hepatic artery pseudoaneurysms related to major pancreatic or hepatic surgery, especially in the setting of acute hemorrhage.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2014

A comparison of implantation methods for large PIT tags or injectable acoustic transmitters in juvenile Chinook salmon

The miniaturization of acoustic transmitters may allow greater flexibility in terms of the size and species of fish available to tag. New downsized injectable acoustic tags similar in shape to passive integrated transponder tags can be rapidly injected rather than surgically implanted through a sutured incision, as is current practice. Before wide-scale field use of these injectable transmitters, standard protocols to ensure the most effective and least damaging methods of implantation must be developed. Three implantation methods were tested in various sizes of juvenile Chinook salmon Oncorhynchus tschawytscha. Methods included a needle bevel-down injection, a needle bevel-up injection with a 90-degree rotation, and tag implantation through an unsutured incision. Tagged fish were compared to untagged control groups. Weight and wound area were measured at tagging and every week for 3 weeks; holding tanks were checked daily for mortalities and tag losses. No differences among treatments were found in growth, tag loss, or survival, but wound area was significantly reduced among incision-treated fish. The bevel-up injection had the worst results in terms of tag loss and wound area and also had high mortality. Implantation through an incision resulted in the lowest tag loss but the highest mortality. Fish from the bevel-down treatment group had the least mortality; wound areas also were smaller than the bevel-up treatment group. Cumulatively, the data suggest that the unsutured incision and bevel-down injection methods were the most effective; the drawbacks of both methods are described in detail. However, we further recommend larger and longer studies to find more robust thresholds for tagging size that include more sensitive measures.

injection↗
DOE OSTI2019

Mechanical Response of He-Implanted Amorphous SiOC/Crystalline Fe Nanolaminates

This study investigates the microstructural evolution and mechanical response of sputter-deposited amorphous silicon oxycarbide (SiOC)/crystalline Fe nanolaminates, a single layer SiOC film, and a single layer Fe film subjected to ion implantation at room temperature to obtain a maximum He concentration of 5 at. %. X-ray diffraction and transmission electron microscopy indicated no evidence of implantation-induced phase transformation or layer breakdown in the nanolaminates. Implantation resulted in the formation of He bubbles and an increase in the average size of the Fe grains in the individual Fe layers of the nanolaminates and the single layer Fe film, but the bubble density and grain size were found to be smaller in the former. By reducing the thicknesses of individual layers in the nanolaminates, bubble density and grain size were further decreased. No He bubbles were observed in the SiOC layers of the nanolaminates and the single layer SiOC film. Nanoindentation and scanning probe microscopy revealed an increase in the hardness of both single layer SiOC and Fe films after implantation. For the nanolaminates, changes in hardness were found to depend on the thicknesses of the individual layers, where reducing the layer thickness to 14 nm resulted in mitigation of implantation-induced hardening.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Long-term drift of Si-MOS quantum dots with intentional donor implants

Charge noise can be detrimental to the operation of quantum dot (QD) based semiconductor qubits. Here, we study the low-frequency charge noise by charge offset drift measurements for Si-MOS devices with intentionally implanted donors near the QDs. We show that the MOS system exhibits non-equilibrium drift characteristics, in the form of transients and discrete jumps, that are not dependent on the properties of the donor implants. The equilibrium charge noise suggests a 1/f noise dependence, and a noise strength as low as 1 μeV/$\sqrt{Hz}$, comparable to that reported in more model GaAs and Si/SiGe systems (which have also not been implanted). We demonstrate that implanted qubits, therefore, can be fabricated without detrimental effects on long-term drift or 1/f noise for devices with less than 50 implanted donors near the qubit.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Imaging and speciation of intracellular metallic implant debris using synchrotron-based X-ray fluorescence micro-spectroscopy: a study of two cases

Debris generated from total hip arthroplasty (THA) components made from metal alloys can cause, in some cases, inflammatory cell (e.g., macrophages) responses that lead to adverse local tissue reactions (ALTR) and implant failure. The lack of information on intracellular chemical alterations of metal debris has hindered the understanding of the pathogenesis of ALTR. The goal of this study was to characterize intracellular debris within macrophages using Synchrotron imaging and spectroscopy. We studied periprosthetic tissues of two retrieved THAs with (1) a metal-on-metal (MoM) articulation and (2) a metal-on-polyethylene (MoP) articulation exhibiting corrosion of the metal femoral head. The MoM-THA exhibited different valence states of chromium- and cobalt-containing debris, suggesting three different moieties: Cr 2 O 3 , CrPO 4 , and an alloy-oxide mixture. The findings further suggest that Cr 2 O 3 formed in the tribological interfaces of the implant, while CrPO 4 is a by-product of the phagocytosis process of cobalt alloy-containing debris. Titanium debris appeared to occur in a mixed crystalline/amorphous oxide state. It remains unclear if this chemical state results from the tribochemical processes at the implant surface or intracellular alterations. The MoP-THA specimen exhibited no intracellular particulate debris associated with macrohpages, indicating that the ALTR may be entirely triggered by metal ionic species in this case. A better understanding of in vivo chemical alteration of implant debris will aid in assessing the risk for ALTR during implant design and material choice. However, various techniques are needed to accurately determine the interaction between metal particles and the inta- and extra-cellular environment.

60 APPLIED LIFE SCIENCES↗
DOE OSTI2016

Synthesis of Fe 16 N 2 compound Free-Standing Foils with 20 MGOe Magnetic Energy Product by Nitrogen Ion-Implantation

Rare-earth-free magnets are highly demanded by clean and renewable energy industries because of the supply constraints and environmental issues. A promising permanent magnet should possess high remanent magnetic flux density (Br), large coercivity (Hc) and hence large maximum magnetic energy product ((BH)max). Fe 16 N 2 has been emerging as one of promising candidates because of the redundancy of Fe and N on the earth, its large magnetocrystalline anisotropy (Ku>1.0×107 erg/cc), and large saturation magnetization (4πMs>2.4T). However, there is no report on the formation of Fe 16 N 2 magnet with high Br and large Hc in bulk format before. In this paper, we successfully synthesize freestanding Fe 16 N 2 foils with a coercivity of up to 1910Oe and a magnetic energy product of up to 20 MGOe at room temperature. Nitrogen ion implantation is used as an alternative nitriding approach with the benefit of tunable implantation energy and fluence. An integrated synthesis technique is developed, including a direct foil-substrate bonding step, an ion implantation step and a two-step post-annealing process. With the tunable capability of the ion implantation fluence and energy, a microstructure with grain size 25–30nm is constructed on the FeN foil sample with the implantation fluence of 5×10 17 /cm 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2014

Electronic band gap reduction and intense luminescence in Co and Mn ion-implanted SiO{sub 2}

Cobalt and manganese ions are implanted into SiO{sub 2} over a wide range of concentrations. For low concentrations, the Co atoms occupy interstitial locations, coordinated with oxygen, while metallic Co clusters form at higher implantation concentrations. For all concentrations studied here, Mn ions remain in interstitial locations and do not cluster. Using resonant x-ray emission spectroscopy and Anderson impurity model calculations, we determine the strength of the covalent interaction between the interstitial ions and the SiO{sub 2} valence band, finding it comparable to Mn and Co monoxides. Further, we find an increasing reduction in the SiO{sub 2} electronic band gap for increasing implantation concentration, due primarily to the introduction of Mn- and Co-derived conduction band states. We also observe a strong increase in a band of x-ray stimulated luminescence at 2.75 eV after implantation, attributed to oxygen deficient centers formed during implantation.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate

The interaction of Sn atoms with defects induced by Sn implantation of Ge substrates with antimony (Sb) as an n-type dopant and the impact of H{sub 2} annealing on these defects were investigated by comparison with defects induced by Ge self-implantation. In the Ge samples implanted with either Sn or Ge, and annealed at temperatures of less than 200 °C, divacancies, Sb-vacancy complexes with single or double acceptor-like states, and defects related to Sb and interstitial Ge atoms were present. On the other hand, after annealing at 500 °C in an N{sub 2} or H{sub 2} atmosphere, defects with different structures were observed in the Sn-implanted samples by deep level transition spectroscopy. The energy levels of the defects were 0.33 eV from the conduction band minimum and 0.55 eV from the valence band maximum. From the capacitance-voltage (C-V) characteristics, interaction between Sn atoms and defects after annealing at 500 °C was observed. The effect of H{sub 2} annealing at around 200 °C was observed in the C-V characteristics, which can be attributed to hydrogen passivation, and this effect was observed in both the Ge- and Sn-implanted samples. These results suggest the presence of defects that interact with Sn or hydrogen atoms. This indicates the possibility of defect control in Ge substrates by Sn or hydrogen incorporation. Such defect control could yield high-performance Ge-based devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Depth profile reconstructions of electronic transport properties in H{sup +} MeV-energy ion-implanted n-Si wafers using photocarrier radiometry

A depth profiling technique using photocarrier radiometry (PCR) is demonstrated and used for the reconstruction of continuously varying electronic transport properties (carrier lifetime and electronic diffusivity) in the interim region between the ion residence layer and the bulk crystalline layer in H{sup +} implanted semiconductor wafers with high implantation energies (∼MeV). This defect-rich region, which is normally assumed to be part of the homogeneous “substrate” in all existing two- and three-layer models, was sliced into many virtual thin layers along the depth direction so that the continuously and monotonically variable electronic properties across its thickness can be considered uniform within each virtual layer. The depth profile reconstruction of both carrier life time and diffusivity in H{sup +} implanted wafers with several implantation doses (3 × 10{sup 14}, 3 × 10{sup 15}, and 3 × 10{sup 16} cm{sup −2}) and different implantation energies (from 0.75 to 2.0 MeV) is presented. This all-optical PCR method provides a fast non-destructive way of characterizing sub-surface process-induced electronic defect profiles in devices under fabrication at any intermediate stage before final metallization and possibly lead to process correction and optimization well before electrical testing and defect diagnosis becomes possible.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

The local environment of cobalt in amorphous, polycrystalline and epitaxial anatase TiO{sub 2}:Co films produced by cobalt ion implantation

Amorphous, polycrystalline anatase and epitaxial anatase TiO{sub 2} films have been implanted with 5 at. % Co{sup +}. The magnetic and structural properties of different microstructures of TiO{sub 2}:Co, along with the local coordination of the implanted Co atoms within the host lattice are investigated. In amorphous TiO{sub 2}:Co film, Co atoms are in the (II) oxidation state with a complex coordination and exhibit a paramagnetic response. However, for the TiO{sub 2}:Co epitaxial and polycrystalline anatase films, Co atoms have a distorted octahedral (II) oxygen coordination assigned to a substitutional environment with traces of metallic Co clusters, which gives a rise to a superparamagnetic behavior. Despite the incorporation of the implanted atoms into the host lattice, high temperature ferromagnetism is absent in the films. On the other hand, it is found that the concentration and size of the implantation-induced nanoclusters and the magnetic properties of TiO{sub 2}:Co films have a strong dependency on the initial microstructure of TiO{sub 2}. Consequently, metallic nanocluster formation within ion implantation prepared transition metal doped TiO{sub 2} can be suppressed by tuning the film microstructure.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Ab initio studies on the adsorption and implantation of Al and Fe to nitride materials

The formation of transfer material products on coated cutting and forming tools is a major failure mechanism leading to various sorts of wear. To describe the atomistic processes behind the formation of transfer materials, we use ab initio to study the adsorption energy as well as the implantation barrier of Al and Fe atoms for (001)-oriented surfaces of TiN, Ti{sub 0.50}Al{sub 0.50}N, Ti{sub 0.90}Si{sub 0.10}N, CrN, and Cr{sub 0.90}Si{sub 0.10}N. The interactions between additional atoms and nitride-surfaces are described for pure adhesion, considering no additional stresses, and for the implantation barrier. The latter, we simplified to the stress required to implant Al and Fe into sub-surface regions of the nitride material. The adsorption energies exhibit pronounced extrema at high-symmetry positions and are generally highest at nitrogen sites. Here, the binary nitrides are comparable to their ternary counterparts and the average adhesive energy is higher (more negative) on CrN than TiN based systems. Contrary, the implantation barrier for Al and Fe atoms is higher for the ternary systems Ti{sub 0.50}Al{sub 0.50}N, Ti{sub 0.90}Si{sub 0.10}N, and Cr{sub 0.90}Si{sub 0.10}N than for their binary counterparts TiN and CrN. Based on our results, we can conclude that TiN based systems outperform CrN based systems with respect to pure adhesion, while the Si-containing ternaries exhibit higher implantation barriers for Al and Fe atoms. The data obtained are important to understand the atomistic interaction of metal atoms with nitride-based materials, which is valid not just for machining operations but also for any combination such as interfaces between coatings and substrates or multilayer and phase arrangements themselves.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Embedded Ge nanocrystals in SiO{sub 2} synthesized by ion implantation

200 nm thick SiO{sub 2} layers grown on Si substrates were implanted with 150 keV Ge ions at three different fluences. As-implanted samples were characterized with time-of-flight secondary ion mass spectrometry and Rutherford backscattering spectrometry to obtain depth profiles and concentration of Ge ions. As-implanted samples were annealed at 950 °C for 30 min. Crystalline quality of pristine, as-implanted, and annealed samples was investigated using Raman scattering measurements and the results were compared. Crystalline structure of as-implanted and annealed samples of embedded Ge into SiO{sub 2} matrix was studied using x-ray diffraction. No secondary phase or alloy formation of Ge was detected with x-ray diffraction or Raman measurements. Scanning transmission electron microscope measurements were done to get the nanocrystal size and localized information. The results confirmed that fluence dependent Ge nanocrystals of different sizes are formed in the annealed samples. It is also observed that Ge is slowly diffusing deeper into the substrate with annealing.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Efficacy of dalbavancin against MRSA biofilms in a rat model of orthopaedic implant-associated infection

Abstract Objectives The aim of this study was to evaluate the efficacy of dalbavancin against MRSA biofilm-related infection in orthopaedic implants in vivo. Methods One MRSA strain isolated from human osteomyelitis was used to promote biofilm formation on the surface of screws. The implants were inserted in the proximal tibia under general anaesthesia. Thirty-nine Wistar rats were divided into three groups [control group (no treatment), Group 1 (7 days of treatment) and Group 2 (14 days of treatment)]; both treatment groups were administered dalbavancin intraperitoneally and euthanized after treatment. cfu of bacteria present in both the tibia and the implant were quantified. The infection severity was assessed by histopathology and scored from 0 (no infection) to 4 (severe infection). Results The high number of cfu/g and cfu/mL present in the control group indicated a well-established infection. There was a significant reduction in cfu in rats treated with dalbavancin both in the tibia (2.8 × 105 cfu/g) and the implant (1.1 × 106 cfu/mL) in Group 1 (1.8 × 103 cfu/g and 2.4 × 105 cfu/mL, respectively) and in Group 2 (8.2 cfu/g and 8.2 × 103 cfu/mL, respectively). Most animals from the control group presented an infection scored as 3 (severe). At the end of the experiment, most rats from Groups 1 and 2 presented an infection scored as 2 (moderate) and 0 (no infection), respectively. Conclusions Although there was a marked decrease in cfu number, signs of biofilm-induced infection prevailed after 14 days of treatment. Further studies should be carried out to evaluate the potential of dalbavancin in the treatment of bone and orthopaedic implant-associated MRSA infections.

Silva, Vanessa↗
DOE OSTI2014

Optimization of a plasma immersion ion implantation process for shallow junctions in silicon

A plasma immersion ion implantation (PIII) process has been developed for realizing shallow doping profiles of phosphorus and boron in silicon using an in-house built dual chamber cluster tool. High Si etch rates observed in a 5% PH{sub 3} in H{sub 2} plasma have been ascribed to high concentration of H(α) radicals. Therefore, subsequent work was carried out with 5% PH{sub 3} in He, leading to much smaller etch rates. By optical emission spectroscopy, the radical species H(α), PH*{sub 2}, and PH* have been identified. The concentration of all three species increased with pressure. Also, ion concentrations increased with pressure as evidenced by Langmuir data, with a maximum occurring at 0.12 mbar. The duty cycle of pulsed DC bias has a significant bearing on both the implantation and the etching process as it controls the leakage of positive charge collected at the surface of the silicon wafer during pulse on-time generated primarily due to secondary electron emission. The P implant process was optimized for a duty cycle of 10% or less at a pressure of 0.12 mbar with implant times as low as 30 s. Secondary ion mass spectroscopy showed a P dopant depth of 145 nm after rapid thermal annealing (RTA) at 950 °C for 5 s, resulting in a sheet resistance of 77 Ω/◻. Si n{sup +}/p diodes fabricated with phosphorus implantation using optimized PIII and RTA conditions exhibit J{sub on}/J{sub off} > 10{sup 6} with an ideality factor of nearly 1.2. Using similar conditions, shallow doping profiles of B in silicon have also been realized.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2015

Nitrogen mass transfer models for plasma-based low-energy ion implantation

The nitrogen mass transfer process in plasma-based low-energy ion implantation (PBLEII) is theoretically and experimentally studied in order to explore the process mechanism of PBLEII and therefore to optimize the apparatus design and the process conditions. An electron cyclotron resonance (ECR) microwave discharge generates the nitrogen plasma with a high density of 10{sup 11}–10{sup 12} ions/cm{sup 3}, which diffuses downstream to the process chamber along the divergent magnetic field. The nitrogen ions in the plasma implant into the surface and transport to the matrix of an austenitic stainless steel under the low negative pulsed bias of −2 kV at a process temperature of 400 °C. A global plasma model is used to simulate the ECR microwave plasma discharge for a range of working pressures and microwave powers. The fluid models are adopted to calculate the plasma downstream diffusion, the sheath expansion and the low-energy ion implantation on the surface. A nonlinear kinetic discrete model is established to describe the nitrogen transport in the austenitic stainless steel and the results are compared with the experimental measurements. Under an average implantation current density of 0.3–0.6 mA/cm{sup 2}, the surface nitrogen concentration in the range from 18.5 to 29 at. % is a critical factor for the nitrogen transport in the AISI 304 austenitic stainless steel by PBLEII, which accelerates the implanted nitrogen diffusion inward up to 6–12 μm during a nitriding time of 4 h.

36 MATERIALS SCIENCE↗
NASA NTRS1982

Friction wear and auger analysis of iron implanted with 1.5-MeV nitrogen ions

The effect of implantation of 1.5-MeV nitrogen ions on the friction and wear characteristics of pure iron sliding against steel was studied in a pin-on disk apparatus. An implantation dose of 5 x 10 to the 17th power ions/sq cm was used. Small reductions in initial and steady-state wear rates were observed for nitrogen-implanted iron riders as compared with unimplanted controls. Auger electron spectroscopy revealed a subsurface Gaussian nitrogen distribution with a maximum concentration of 15 at. % at a depth of 8 x 10 to the -7th m. A similar analysis within the wear scar of an implanted rider after 20 microns of wear yielded only background nitrogen concentration, thus giving no evidence for diffusion of nitrogen beyond the implanted range.

Ferrante, J.↗
NASA NTRS1983

Evaluation of the ion implantation process for production of solar cells from silicon sheet materials

The objective of this program is the investigation and evaluation of the capabilities of the ion implantation process for the production of photovoltaic cells from a variety of present-day, state-of-the-art, low-cost silicon sheet materials. Task 1 of the program concerns application of ion implantation and furnace annealing to fabrication of cells made from dendritic web silicon. Task 2 comprises the application of ion implantation and pulsed electron beam annealing (PEBA) to cells made from SEMIX, SILSO, heat-exchanger-method (HEM), edge-defined film-fed growth (EFG) and Czochralski (CZ) silicon. The goals of Task 1 comprise an investigation of implantation and anneal processes applied to dendritic web. A further goal is the evaluation of surface passivation and back surface reflector formation. In this way, processes yielding the very highest efficiency can be evaluated. Task 2 seeks to evaluate the use of PEBA for various sheet materials. A comparison of PEBA to thermal annealing will be made for a variety of ion implantation processes.

Spitzer, M. B.↗
NASA NTRS1982

New implantation techniques for improved solar cell junctions

Ion implantation techniques offering improved cell performance and reduced cost have been studied. These techniques include non-mass-analyzed phosphorus implantation, argon implantation gettering, and low temperature boron annealing. It is found that cells produced by non-mass-analyzed implantation perform as well as mass-analyzed controls, and that the cell performance is largely independent of process parameters. A study of argon implantation gettering shows no improvement over non-gettered controls. Results of low temperature boron annealing experiments are presented.

Spitzer, M. B.↗