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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1994

Investigation of the Stability and 1.0 MeV Proton Radiation Resistance of Commercially Produced Hydrogenated Amorphous Silicon Alloy Solar Cells

The radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys is reported. A number of different device structures were irradiated with 1.0 MeV protons. The cells were insensitive to proton fluences below 1E12 sq cm. The parameters of the irradiated cells were restored with annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters for fluences below 1E14 sq cm fluences above 1E14 sq cm require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed In dark I-V measurements. The current mechanism were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.

Lord, Kenneth R., II↗
NASA NTRS1995

Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Chatterjee, B.↗
NASA NTRS1995

Low Intensity Low Temperature (LILT) Measurements and Coefficients on New Photovoltaic Structures

Past NASA missions to Mars, Jupiter and the outer planets were powered by radioisotope thermal generators (RTGs). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaics (PV) and thermophotovoltaics (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV data base for planetary mission planners and cell designers, we have compiled low intensity low temperature (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate Short Circuit Current (I(sub sc)), Open Circuit Voltage (V(sub os)), and Fill Factor (FF) as a function of temperature and intensity, an accurate prediction of cell performance under the AM0 spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GaInP/GaAs/GaAs, InP, InGaAs/InP, InP/InGaAs/InP, and GaInP. Temperatures range down to as low as -180 C and intensities range from 1 sun down to 0.02 suns. The coefficients presented in this paper represent experimental results and are intended to provide the user with approximate numbers.

Scheiman, David A.↗
NASA NTRS2000

Results of the 1999 JPL Balloon Flight Solar Cell Calibration Program

The 1999 solar cell calibration balloon flight campaign consisted of two flights, which occurred on June 14, 1999, and July 6, 1999. All objectives of the flight program were met. Fifty-seven modules were carried to an altitude of approximately equal to 120,000 ft (36.6 km). Full I-V curves were measured on five of these modules, and output at a fixed load was measured on forty-three modules (forty-five cells), with some modules repeated on the second flight. This data was corrected to 28 C and to 1 AU (1.496 x 10 (exp 8) km). The calibrated cells have been returned to their owners and can now be used as reference standards in simulator testing of cells and arrays.

Anspaugh, B. E.↗
NASA NTRS2000

The DS1 Mission and the Validation of the SCARLET Advanced Array

On October 24, 1998, the first of the NASA New Millenium Spacecraft, DS1, was successfully launched into Space. The objectives for this spacecraft are to test advanced technologies that can reduce the cost or risk of future missions. One of these technologies is the SCARLET concentrating solar array. Although part of the advanced technology validation study, the array is also the spacecraft's power source. Funded by BMDO, the SCARLET concentrator solar array is the first application of a refractive lens concentrator designed for space applications. As part of the DS1 validation process, the amount of diagnostics data that will be acquired is more extensive than would be the norm for a more conventional solar array. These data include temperature measurements at numerous locations on the 2-wing, 4-panel per wing, solar array. For each panel, one 5-cell module in one of the circuit strings is wired so that a complete I-V curve can be obtained. This data is used to verify sun pointing accuracy and array output performance. In addition, the spacecraft power load can be varied in a number of discrete steps from a small fraction of the array total power capability, up to maximum power. For each of the power loads, array operating voltage can be measured along with the current output from each wing. Preliminary in-space measurements suggest SCARLET performance is within one (1) percent of predictions made from ground data. This paper will briefly discuss the SCARLET configuration and critical features. Emphasis will be given to the results of the in-space validation, including array performance as a function of changing solar distance and array performance compared to pre-launch predictions.

Stella, Paul M.↗
NASA NTRS2000

Thin and Thick Films Materials Based Interconnection Technology for 500 C Operation

Precious metal based thick-film material was used for printed wires, wire bond pads, test lead-attach, and conductive die-attach for high temperature (up to 500 C and beyond) chip level packaging. A SiC Shottky diode with a thin-film coated backside was attached to a ceramic substrate using precious metal based thick-film material as the electrically conductive bonding layer. After a 500-hour soak test in atmospheric oxygen, these basic interconnection elements, including attached test diode survived both electrically and mechanically. The electrical resistance of these interconnections (including thick-film printed wire/pad, bonded wire, and test lead attach) were low and stable at both room and elevated temperatures. The electrical resistance of the die-attach interface estimated by I-V characterization of the attached diode, during and after high temperature heat treatment, remained desirably low over the course of a 500-hour anneal. Further durability testing of this high temperature interconnection technology is also discussed.

Chen, Liang-Yu↗
NASA NTRS2000

Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction to the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion or quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

Biegel, Bryan A.↗
NASA NTRS2001

Results of the 2000 JPL Balloon Flight Solar Cell Calibration Program

The 2000 solar cell calibration balloon flight campaign consisted of two flights, which occurred on June 27, 2000, and July 5, 2000. All objectives of the flight program were met. Sixty-two modules were carried to an altitude of approximately 120,000 ft (36.6 km). Full I-V curves were measured on sixteen of these modules, and output at a fixed load was measured on thirty-seven modules (forty-six cells), with some modules repeated on the second flight. Nine modules were flown for temperature measurement only. This data was corrected to 28 C and to 1 AU (1.496x10(exp 8) km). The calibrated cells have been returned to their owners and can now be used as reference standards in simulator testing of cells and arrays.

Anspaugh, B. E.↗
NASA NTRS2001

Arc Inception Mechanism on a Solar Array Immersed in a Low-Density Plasma

In this report, results are presented of an experimental and theoretical study of arc phenomena and snapover for two samples of solar arrays immersed in argon plasma. The effects of arcing and snapover are investigated. I-V curves are measured, and arc and snapover inception voltages and arc rates are determined within the wide range of plasma parameters. A considerable increase in arc rate due to absorption of molecules from atmospheric air has been confirmed. It is shown that increasing gas pressure causes increasing ion current collection and, consequently, arc rate even though the effect of conditioning also takes place. Arc sites have been determined by employing a video-camera. It is confirmed that keeping sample under high vacuum for a long time results in shifting arc threshold voltage well below -300 V. The results obtained seem to be important for the understanding of arc inception mechanism.

Vayner, B.↗
NASA NTRS2000

InGaP/InGaAs-on-Ge Concentrator Solar Cell for Space Power Generation

The passivating front and back window layer of the top cell has been chosen. We have chosen to use InGaAs as the tunnel junction interconnect compound since it is easily degenerately doped. All of the dual junction cell structures were grown on GaAs substrates. Time constraints prevented us from completing the development of the GaAs-on-Ge growth process. Analysis of the I-V and EQE data, and comparison with computer-modeled data, shows that the performance of the dual-junction cell is still being controlled by the bottom cell, in spite of top cell thinning. Further improvement in the dual-junction cell efficiency is possible by thinning the front window.

Sinharoy, Samar↗
NASA NTRS2001

Kinetic Alfven Wave Electron Acceleration on Auroral Field Lines

Major results of the S3-3 Langmuir sweep study are published. Studies show statistics and average density and temperature variation on auroral field lines up to 8000 km altitude. Alfven wave papers were published. Our model of Alfven wave propagation on auroral field lines was successfully extended to handle varying density and magnetic field for the inertial mode. The study showed that Alfven wave can create time-dispersed electron signatures. A study was undertaken to extend Langmuir sweep I-V curves to handle the case of an kappa electron distribution as well as Maxwellian. The manuscript is in preparation. Participated in International Space Science Institute study of Alfvenic structures which resulted in a group review paper. The proposed work was to develop an extended model of Alfven wave propagation along auroral field lines to study electron acceleration. As part of this work, a major task was to characterize density and temperature along auroral field lines by using spacecraft Langmuir sweep data. The work that was completed under this funding was successful at both tasks. Three papers have been published as part of this work and a fourth manuscript is in preparation.

Kletzing, Craig A.↗
NASA NTRS2001

Validation Report for the EO-1 Lightweight Flexible Solar Array Experiment

The controlled deployment of the Lightweight Flexible Solar Array (LFSA) experiment using the shape memory alloy release and deployment system has been demonstrated. Work remains to be done in increasing the efficiency of Copper Indium Diselinide (CIS) terminations to the flexible harness that carries current from the array to the I-V measurement electronics.

Carpenter, Bernie↗
NASA NTRS2000

Mechanisms of Protonic Nonvolatile Memory Device

A nonvolatile memory device based on protonic transport in oxides has been proposed. The mobile H+ ions are introduced into the SiO2 layer by annealing Si/SiO2/Si structures in H2 at temperatures greater than 500 deg C. This effect has only been observed for confined oxides that have been annealed at greater than or equal to 1100 C prior to the hydrogenation anneal. This includes buried oxides such as Unibond and SIMOX as well as thermal oxides annealed with a polysilicon cap. An applied field moves the charge within the oxide and the charge stops moving when the field is removed. In a memory device, the hydrogen-annealed oxide is the gate oxide and the position of the mobile charge is sensed by the shift of the I-V curve. Much is still not understood about the motion of the charge across the buried oxide. Previous work has assumed that H+ transport and the time it takes to traverse the oxide is governed by interactions within the bulk of the oxide. Based on parameters that affect the transport time, we conclude that H+ trapping and detrapping at the Si/SiO2 interface are more important than H+ interactions within the oxide bulk. These parameters include the applied field, the H+ concentration and the oxide thickness. One consequence is that projections of device write-time based on the previous assumptions of H+ transport mechanisms may be overly optimistic.

P J Macfarlane↗
NASA NTRS2002

Purification of the small mechanosensitive channel of Escherichia coli (MscS): the subunit structure, conduction, and gating characteristics in liposomes

The small mechanosensitive channel, MscS, is a part of the turgor-driven solute efflux system that protects bacteria from lysis in the event of osmotic downshift. It has been identified in Escherichia coli as a product of the orphan yggB gene, now called mscS (Levina et al., 1999, EMBO J. 18:1730). Here I show that that the isolated 31-kDa MscS protein is sufficient to form a functional mechanosensitive channel gated directly by tension in the lipid bilayer. MscS-6His complexes purified in the presence of octylglucoside and lipids migrate in a high-resolution gel-filtration column as particles of approximately 200 kDa. Consistent with that, the protein cross-linking patterns predict a hexamer. The channel reconstituted in soybean asolectin liposomes was activated by pressures of 20-60 mm Hg and displayed the same asymmetric I-V curve and slight anionic preference as in situ. At the same time, the single-channel conductance is proportional to the buffer conductivity in a wide range of salt concentrations. The rate of channel activation in response to increasing pressure gradient across the patch was slower than the rate of closure in response to decreasing steps of pressure gradient. Therefore, the open probability curves were recorded with descending series of pressures. Determination of the curvature of patches by video imaging permitted measurements of the channel activity as a function of membrane tension (gamma). Po(gamma) curves had the midpoint at 5.5 +/- 0.1 dyne/cm and gave estimates for the energy of opening DeltaG = 11.4 +/- 0.5 kT, and the transition-related area change DeltaA = 8.4 +/- 0.4 nm(2) when fitted with a two-state Boltzmann model. The correspondence between channel properties in the native and reconstituted systems is discussed.

NASA Discipline Cell Biology↗
NASA NTRS2000

Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction ot the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion of quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

Biegel, Bryan A.↗
NASA NTRS2001

Microelectromechanical Systems (MEMS) Actuator for Reconfigurable Patch Antenna Demonstrated

A microstrip patch antenna with two contact actuators along the radiating edges for frequency reconfiguration was demonstrated at K-band frequencies. The layout of the antenna is shown in the following figure. This antenna has the following advantages over conventional semiconductor varactor-diode-tuned patch antennas: 1. By eliminating the semiconductor diode and its nonlinear I-V characteristics, the antenna minimizes intermodulation signal distortion. This is particularly important in digital wireless systems, which are sensitive to intersymbol interference caused by intermodulation products. 2. Because the MEMS actuator is an electrostatic device, it does not draw any current during operation and, hence, requires a negligible amount of power for actuation. This is an important advantage for hand-held, battery-operated, portable wireless systems since the battery does not need to be charged frequently. 3. The MEMS actuator does not require any special epitaxial layers as in the case of diodes and, hence, is cost effective.

Simons, Rainee N.↗
NASA NTRS1993

High Temperature Superconductor Josephson Weak Links

High T_c edge-geometry SNS microbridges have been fabricated using ion-damaged YBa_2Cu_3O_(7-x) (YBCO) and a nonsuperconducting phase of YBCO (N-YBCO) as normal metals. Optimization of the ion milling process used for YBCO edge formation and cleaning has resulted in ion-damage barrier devices which exhibit I-V characteristics consistent with the Resistively-Shunted-Junction (RSJ) model, with typical current densities (J_c) of approximately 5 x 10^6 A/cm^2 at 4.2 K. Characterization of N-YBCO films suggests that N-YBCO is the orthorhombic YBCO phase with oxygen disorder suppressing T_c...

Hunt, B. D.↗
NASA NTRS1995

Method for fabricating semiconductor devices

A process for fabricating gold/gallium arsenide structures, in situ, on molecular beam epitaxially grown gallium arsenide. The resulting interface proves to be Ohmic, an unexpected result which is interpreted in terms of increased electrode interdiffusion. More importantly, the present invention surprisingly permits the fabrication of Ohmic contacts in a III-V semiconductor material at room temperature. Although it may be desireable to heat the Ohmic contact to a temperature of, for example, 200 degrees Centigrade if one wishes to further decrease the resistance of the contact, such low temperature annealing is much less likely to have any deleterious affect on the underlying substrate. The use of the term in situ herein, contemplates continuously maintaining an ultra-high vacuum, that is a vacuum which is at least 10.sup.-8 Torr, until after the metallization has been completed. An alternative embodiment of the present invention comprising an additional step, namely the termination of the gallium arsenide by a two monolayer thickness of epitaxial aluminum arsenide as a diffusion barrier, enables the recovery of Schottky barrier behavior, namely a rectified I-V characteristic. The present invention provides a significant breakthrough in the fabrication of III-V semiconductor devices wherein excellent Ohmic contact and Schottky barrier interfaces to such devices can be achieved simply and inexpensively and without requiring the high temperature processing of the prior art and also without requiring the use of exotic high temperature refractory materials as substitutes for those preferred contact metals such as gold, aluminum and the like.

Kaiser, William J.↗