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At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
NASA NTRS1998

Results of the 1998 JPL Balloon Flight Solar Cell Calibration Program

The 1998 solar cell calibration balloon flight campaign consisted of one flight, which occurred on August 15, 1998. All objectives of the flight program were met. Thirty-one modules were carried to an altitude of = 120,000 ft (36.6 km). Full I-V curves were measured on 4 of these modules, and output at a fixed load was measured on 27 modules. This data was corrected to 28 C and to 1 AU (1.496 x 10(exp 8) km). The calibrated cells have been returned to the participants and can now be used as reference standards in simulator testing of cells and arrays.

Anspaugh, B. E.↗
NASA NTRS1998

AXAF-I Low Intensity-Low Temperature (LILT) Testing of the Development Verification Test (DVT) Solar Panel

The planned orbit of the AXAF-I spacecraft will subject the spacecraft to both short, less than 30 minutes for solar and less than 2 hours for lunar, and long earth eclipses and lunar eclipses with combined conjunctive duration of up to 3 to 4 hours. Lack of proper Electrical Power System (EPS) conditioning prior to eclipse may cause loss of mission. To avoid this problem, for short eclipses, it is necessary to off-point the solar array prior to or at the beginning of the eclipse to reduce the battery state of charge (SOC). This yields less overcharge during the high charge currents at sun entry. For long lunar eclipses, solar array pointing and load scheduling must be tailored for the profile of the eclipse. The battery SOC, loads, and solar array current-voltage (I-V) must be known or predictable to maintain the bus voltage within acceptable range. To address engineering concerns about the electrical performance of the AXAF-I solar array under Low Intensity and Low Temperature (LILT) conditions, Marshall Space Flight Center (MSFC) engineers undertook special testing of the AXAF-I Development Verification Test (DVT) solar panel in September-November 1997. In the test the DVT test panel was installed in a thermal vacuum chamber with a large view window with a mechanical "flapper door". The DVT test panel was "flash" tested with a Large Area Pulse Solar Simulator (LAPSS) at various fractional sun intensities and panel (solar cell) temperatures. The testing was unique with regards to the large size of the test article and type of testing performed. The test setup, results, and lessons learned from the testing will be presented.

Alexander, Doug↗
NASA NTRS1996

Satellite Particle Collection During Active States of the Tethered Satellite System (TSS)

The reflight of the Tethered Satellite System (TSS-1R) was carried aboard the Space Shuttle Columbia on February 22, 1996. After deploying a day later than planned, the satellite almost reached its full deployed distance before the tether broke. Data was collected for over 5 hours during deployment out to a distance of 19.7 km. Maximum emf attained during deployment was 3700 V while the maximum current achieved was just under 0.5 A. The current collected was factors of 2 to 4 greater than the predictions of the conventional Parker-Murphy theory. The microscopic view of the collection process at the satellite showed exotic behavior with the existence of 100 - 200 eV suprathermal electrons and significant spin phase modulation of the electron fluxes. Although the data set acquired from TSS- 1R was considerably less than planned, the quality of the data allows one of the main goals of the mission to be met--characterizing the system I-V response. A "quick look" assessment of the data has already shown that an understanding of the TSS-1R electrodynamic behavior will require modification of the standard picture of current collection in space plasmas

Wright, K. H., Jr.↗
NASA NTRS1999

The Conductor-Dielectric Junctions in a Low Density Plasma

A conductor-dielectric junction exposed to the space environment is a frequent spacecraft design feature. Due to spacecraft charging and/or solar array operation, the conductor can acquire a high potential with respect to the surrounding plasma. If this potential is positive the insulators adjacent to exposed conductors can collect current as if they were conductors themselves. This phenomenon, called snapover, results in a substantial increase in current collection, and may even result in a glow discharge if the potential is high enough. If a conductor has a negative potential, arcing can occur at the site of a junction. Both of these phenomena negatively affect spacecraft operation. To prevent negative consequences, the physical mechanisms of snapover and arc inception require investigation. In this paper, results are presented of an experimental and theoretical study of snapover, glow discharge, and arc phenomena for different materials immersed in argon or xenon plasmas. The effect of snapover is investigated for several metal-dielectric junctions: copper-teflon, copper-Kapton, copper-glass, aluminum-teflon, aluminum-Kapton, steel-teflon, anodized aluminum with pinholes, and copper-ceramics. I-V curves are measured and snapover inception voltages, essential parameters (increase in current and collection area due to secondary electrons), and glow discharge inception thresholds are determined. Optical spectra are obtained for glow discharges in both argon and xenon plasmas. These spectra provide information regarding atomic species entrapped in the glow region. Some spectral lines can be used to estimate plasma parameters in the discharge area. A video-camera and linear array were used to confirm that snapover inception is accompanied by very low intensity visible light emission. This result seems to be important for the estimate of the light pollution around spacecraft. Optical spectra (wavelengths 380-650 nm) of arcs are also obtained on a negatively biased chromic acid anodized aluminum plate immersed in low density argon and xenon plasmas. Analysis of these spectra confirms our earlier findings that aluminum atoms are ejected from the arc site. Moreover, it is found that chromium atoms are also quite abundant in the arc plasma. It is believed that the latter results contribute considerably to the understanding of processes of plasma contamination caused by arcing.

Vayner, Boris↗
NASA NTRS1999

Study of Bulk and Elementary Screw Dislocation Assisted Reverse Breakdown in Low-Voltage (<250 V) 4H-SiC p+n Junction Diodes - Part 1: DC Properties

Given the high density (approx. 10(exp 4)/sq cm) of elementary screw dislocations (Burgers vector = lc with no hollow core) in commercial SiC wafers and epilayers, all appreciable current (greater than 1 A) SiC power devices will likely contain elementary screw dislocations for the foreseeable future. It is therefore important to ascertain the electrical impact of these defects, particularly in high-field vertical power device topologies where SiC is expected to enable large performance improvements in solid-state high-power systems. This paper compares the DC-measured reverse-breakdown characteristics of low-voltage (less than 250 V) small-area (less than 5 x 10(exp -4) sq cm) 4H-SiC p(+)n diodes with and without elementary screw dislocations. Compared to screw dislocation-free devices, diodes containing elementary screw dislocations exhibited higher pre-breakdown reverse leakage currents, softer reverse breakdown I-V knees, and highly localized microplasmic breakdown current filaments. The observed localized 4H-SiC breakdown parallels microplasmic breakdowns observed in silicon and other semiconductors, in which space-charge effects limit current conduction through the local microplasma as reverse bias is increased.

Neudeck, Philip G.↗
NASA NTRS1998

Surface Passivation of CdZnTe Detector by Hydrogen Peroxide Solution Etching

The spectral resolution of room temperature nuclear radiation detectors such as CdZnTe is usually limited by the presence of conducting surface species that increase the surface leakage current. Studies have shown that the leakage current can be reduced by proper surface preparation. In this study, we try to optimize the performance of CdZnTe detector by etching the detector with hydrogen peroxide solution as function of concentration and etching time. The passivation effect that hydrogen peroxide introduces have been investigated by current-voltage (I-V) measurement on both parallel strips and metal-semiconductor-metal configurations. The improvements on the spectral response of Fe-55 and 241Am due to hydrogen peroxide treatment are presented and discussed.

Hayes, M.↗
NASA NTRS1998

Purification and Crystal Growth of Lead Iodide by Physical Vapor Transport Method

Lead iodide (PbI2) is a layered compound semiconductor being developed as room temperature x- and gamma-ray detector. Compared to the more studied material, mercuric iodide, PbI2 has a higher melting temperature and no phase transition until liquid phase which are indications of better mechanical properties. In this study, the source material was purified by the zone-refining process, and the purest section was extracted from center of the the zone-refined ingot to be grown by physical vapor transport (PVT) method. The zone-refined material and as-grown crystals were characterized by optical microscopy and differential scanning calorimetry (DSC) to reveal the surface morphology, purity and stoichiometry. The results shows that both materials are near-stoichiometric composition, with the purity of the as-grown crystals higher than zone-refined materials. The resistivity of the as-grown crystal (10" Omega-cm) was derived from current-voltage (I-V) measurement, and is 10 times higher than the zone-refined materials. Detail results will be presented and discussed.

Wright, G. W.↗
NASA NTRS1994

Investigation of the Stability and 1.0 MeV Proton Radiation Resistance of Commercially Produced Hydrogenated Amorphous Silicon Alloy Solar Cells

The radiation resistance of commercial solar cells fabricated from hydrogenated amorphous silicon alloys is reported. A number of different device structures were irradiated with 1.0 MeV protons. The cells were insensitive to proton fluences below 1E12 sq cm. The parameters of the irradiated cells were restored with annealing at 200 C. The annealing time was dependent on proton fluence. Annealing devices for one hour restores cell parameters for fluences below 1E14 sq cm fluences above 1E14 sq cm require longer annealing times. A parametric fitting model was used to characterize current mechanisms observed In dark I-V measurements. The current mechanism were explored with irradiation fluence, and voltage and light soaking times. The thermal generation current density and quality factor increased with proton fluence. Device simulation shows the degradation in cell characteristics may be explained by the reduction of the electric field in the intrinsic layer.

Lord, Kenneth R., II↗
NASA NTRS1995

Hydrogen Passivation of N(+)P and P(+)N Heteroepitaxial InP Solar Cell Structures

Dislocations and related point defect complexes caused by lattice mismatch currently limit the performance of heteroepitaxial InP cells by introducing shunting paths across the active junction and by the formation of deep traps within the base region. We have previously demonstrated that plasma hydrogenation is an effective and stable means to passivate the electrical activity of such defects in specially designed heteroepitaxial InP test structures to probe hydrogen passivation at typical base depths within a cell structure. In this work, we present our results on the hydrogen passivation of actual heteroepitaxial n(+)p and p(+)n InP cell structures grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). We have found that a 2 hour exposure to a 13.56 MHz hydrogen plasma at 275 C reduces the deep level concentration in the base regions of both n(+)p and p(+)n heteroepitaxial InP cell structures from as-grown values of 5 - 7 x 10(exp 14)/cc, down to 3 - 5 x 10(exp 12)/cc. All dopants were successfully reactivated by a 400 C, 5 minute anneal With no detectable activation of deep levels. I-V analysis indicated a subsequent approx. 100 fold decrease In reverse leakage current at -1 volt reverse bias, and an improved built in voltage for the p(+)n structures. ln addition to being passivated,dislocations are also shown to participate in secondary interactions during hydrogenation. We find that the presence of dislocations enhances hydrogen diffusion into the cell structure, and lowers the apparent dissociation energy of Zn-H complexes from 1.19 eV for homoepitaxial Zn-doped InP to 1.12 eV for heteroepitaxial Zn-doped InP. This is explained by additional hydrogen trapping at dislocations subsequent to the reactivation of Zn dopants after hydrogenation.

Chatterjee, B.↗
NASA NTRS1995

Low Intensity Low Temperature (LILT) Measurements and Coefficients on New Photovoltaic Structures

Past NASA missions to Mars, Jupiter and the outer planets were powered by radioisotope thermal generators (RTGs). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaics (PV) and thermophotovoltaics (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV data base for planetary mission planners and cell designers, we have compiled low intensity low temperature (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate Short Circuit Current (I(sub sc)), Open Circuit Voltage (V(sub os)), and Fill Factor (FF) as a function of temperature and intensity, an accurate prediction of cell performance under the AM0 spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GaInP/GaAs/GaAs, InP, InGaAs/InP, InP/InGaAs/InP, and GaInP. Temperatures range down to as low as -180 C and intensities range from 1 sun down to 0.02 suns. The coefficients presented in this paper represent experimental results and are intended to provide the user with approximate numbers.

Scheiman, David A.↗
NASA NTRS2000

Results of the 1999 JPL Balloon Flight Solar Cell Calibration Program

The 1999 solar cell calibration balloon flight campaign consisted of two flights, which occurred on June 14, 1999, and July 6, 1999. All objectives of the flight program were met. Fifty-seven modules were carried to an altitude of approximately equal to 120,000 ft (36.6 km). Full I-V curves were measured on five of these modules, and output at a fixed load was measured on forty-three modules (forty-five cells), with some modules repeated on the second flight. This data was corrected to 28 C and to 1 AU (1.496 x 10 (exp 8) km). The calibrated cells have been returned to their owners and can now be used as reference standards in simulator testing of cells and arrays.

Anspaugh, B. E.↗
NASA NTRS2000

The DS1 Mission and the Validation of the SCARLET Advanced Array

On October 24, 1998, the first of the NASA New Millenium Spacecraft, DS1, was successfully launched into Space. The objectives for this spacecraft are to test advanced technologies that can reduce the cost or risk of future missions. One of these technologies is the SCARLET concentrating solar array. Although part of the advanced technology validation study, the array is also the spacecraft's power source. Funded by BMDO, the SCARLET concentrator solar array is the first application of a refractive lens concentrator designed for space applications. As part of the DS1 validation process, the amount of diagnostics data that will be acquired is more extensive than would be the norm for a more conventional solar array. These data include temperature measurements at numerous locations on the 2-wing, 4-panel per wing, solar array. For each panel, one 5-cell module in one of the circuit strings is wired so that a complete I-V curve can be obtained. This data is used to verify sun pointing accuracy and array output performance. In addition, the spacecraft power load can be varied in a number of discrete steps from a small fraction of the array total power capability, up to maximum power. For each of the power loads, array operating voltage can be measured along with the current output from each wing. Preliminary in-space measurements suggest SCARLET performance is within one (1) percent of predictions made from ground data. This paper will briefly discuss the SCARLET configuration and critical features. Emphasis will be given to the results of the in-space validation, including array performance as a function of changing solar distance and array performance compared to pre-launch predictions.

Stella, Paul M.↗
NASA NTRS2000

Thin and Thick Films Materials Based Interconnection Technology for 500 C Operation

Precious metal based thick-film material was used for printed wires, wire bond pads, test lead-attach, and conductive die-attach for high temperature (up to 500 C and beyond) chip level packaging. A SiC Shottky diode with a thin-film coated backside was attached to a ceramic substrate using precious metal based thick-film material as the electrically conductive bonding layer. After a 500-hour soak test in atmospheric oxygen, these basic interconnection elements, including attached test diode survived both electrically and mechanically. The electrical resistance of these interconnections (including thick-film printed wire/pad, bonded wire, and test lead attach) were low and stable at both room and elevated temperatures. The electrical resistance of the die-attach interface estimated by I-V characterization of the attached diode, during and after high temperature heat treatment, remained desirably low over the course of a 500-hour anneal. Further durability testing of this high temperature interconnection technology is also discussed.

Chen, Liang-Yu↗
NASA NTRS2000

Efficient Multi-Dimensional Simulation of Quantum Confinement Effects in Advanced MOS Devices

We investigate the density-gradient (DG) transport model for efficient multi-dimensional simulation of quantum confinement effects in advanced MOS devices. The formulation of the DG model is described as a quantum correction to the classical drift-diffusion model. Quantum confinement effects are shown to be significant in sub-100nm MOSFETs. In thin-oxide MOS capacitors, quantum effects may reduce gate capacitance by 25% or more. As a result, the inclusion or quantum effects in simulations dramatically improves the match between C-V simulations and measurements for oxide thickness down to 2 nm. Significant quantum corrections also occur in the I-V characteristics of short-channel (30 to 100 nm) n-MOSFETs, with current drive reduced by up to 70%. This effect is shown to result from reduced inversion charge due to quantum confinement of electrons in the channel. Also, subthreshold slope is degraded by 15 to 20 mV/decade with the inclusion of quantum effects via the density-gradient model, and short channel effects (in particular, drain-induced barrier lowering) are noticeably increased.

Biegel, Bryan A.↗
NASA NTRS2000

InGaP/InGaAs-on-Ge Concentrator Solar Cell for Space Power Generation

The passivating front and back window layer of the top cell has been chosen. We have chosen to use InGaAs as the tunnel junction interconnect compound since it is easily degenerately doped. All of the dual junction cell structures were grown on GaAs substrates. Time constraints prevented us from completing the development of the GaAs-on-Ge growth process. Analysis of the I-V and EQE data, and comparison with computer-modeled data, shows that the performance of the dual-junction cell is still being controlled by the bottom cell, in spite of top cell thinning. Further improvement in the dual-junction cell efficiency is possible by thinning the front window.

Sinharoy, Samar↗
NASA NTRS2000

Mechanisms of Protonic Nonvolatile Memory Device

A nonvolatile memory device based on protonic transport in oxides has been proposed. The mobile H+ ions are introduced into the SiO2 layer by annealing Si/SiO2/Si structures in H2 at temperatures greater than 500 deg C. This effect has only been observed for confined oxides that have been annealed at greater than or equal to 1100 C prior to the hydrogenation anneal. This includes buried oxides such as Unibond and SIMOX as well as thermal oxides annealed with a polysilicon cap. An applied field moves the charge within the oxide and the charge stops moving when the field is removed. In a memory device, the hydrogen-annealed oxide is the gate oxide and the position of the mobile charge is sensed by the shift of the I-V curve. Much is still not understood about the motion of the charge across the buried oxide. Previous work has assumed that H+ transport and the time it takes to traverse the oxide is governed by interactions within the bulk of the oxide. Based on parameters that affect the transport time, we conclude that H+ trapping and detrapping at the Si/SiO2 interface are more important than H+ interactions within the oxide bulk. These parameters include the applied field, the H+ concentration and the oxide thickness. One consequence is that projections of device write-time based on the previous assumptions of H+ transport mechanisms may be overly optimistic.

P J Macfarlane↗
NASA NTRS1993

High Temperature Superconductor Josephson Weak Links

High T_c edge-geometry SNS microbridges have been fabricated using ion-damaged YBa_2Cu_3O_(7-x) (YBCO) and a nonsuperconducting phase of YBCO (N-YBCO) as normal metals. Optimization of the ion milling process used for YBCO edge formation and cleaning has resulted in ion-damage barrier devices which exhibit I-V characteristics consistent with the Resistively-Shunted-Junction (RSJ) model, with typical current densities (J_c) of approximately 5 x 10^6 A/cm^2 at 4.2 K. Characterization of N-YBCO films suggests that N-YBCO is the orthorhombic YBCO phase with oxygen disorder suppressing T_c...

Hunt, B. D.↗
NASA NTRS1995

Method for fabricating semiconductor devices

A process for fabricating gold/gallium arsenide structures, in situ, on molecular beam epitaxially grown gallium arsenide. The resulting interface proves to be Ohmic, an unexpected result which is interpreted in terms of increased electrode interdiffusion. More importantly, the present invention surprisingly permits the fabrication of Ohmic contacts in a III-V semiconductor material at room temperature. Although it may be desireable to heat the Ohmic contact to a temperature of, for example, 200 degrees Centigrade if one wishes to further decrease the resistance of the contact, such low temperature annealing is much less likely to have any deleterious affect on the underlying substrate. The use of the term in situ herein, contemplates continuously maintaining an ultra-high vacuum, that is a vacuum which is at least 10.sup.-8 Torr, until after the metallization has been completed. An alternative embodiment of the present invention comprising an additional step, namely the termination of the gallium arsenide by a two monolayer thickness of epitaxial aluminum arsenide as a diffusion barrier, enables the recovery of Schottky barrier behavior, namely a rectified I-V characteristic. The present invention provides a significant breakthrough in the fabrication of III-V semiconductor devices wherein excellent Ohmic contact and Schottky barrier interfaces to such devices can be achieved simply and inexpensively and without requiring the high temperature processing of the prior art and also without requiring the use of exotic high temperature refractory materials as substitutes for those preferred contact metals such as gold, aluminum and the like.

Kaiser, William J.↗