GE Inlet+Fan Design for LTO Noise
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Supersonic↗
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FTu4G.2 Ge 2 Sb 2 Se 4 Te-Based Reconfigurable On-Chip Metasurface NIR Filter
A tunable level, phase change material-based metasurface near IR optical filter on a transmissive doped silicon-on-insulator platform is demonstrated. This type of filter is non-volatile, non-mechanical, with switching being enabled by Joule heating via current pulses.
phase change material↗
High-efficiency thermoelectric Ba 8 Cu 14 Ge 6 P 26 : bridging the gap between tetrel-based and tetrel-free clathrates
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Jian Wang↗
Determining the Metal/Silicate Partition Coefficient of Germanium: Implications for Core and Mantle Differentiation.
Currently there are several hypotheses for the thermal state of the early Earth. Some hypothesize a shallow magma ocean, or deep magma ocean, or heterogeneous accretion which requires no magma ocean at all. Previous models are unable to account for Ge depletion in Earth's mantle relative to CI chondrites. In this study, the element Ge is used to observe the way siderophile elements partition into the metallic core. The purpose of this research is to provide new data for Ge and to further test these models for Earth's early stages. The partition coefficients (D(sub Ge) = c(sub metal)/c(sub silicate), where D = partition coefficient of Ge and c = concentration of Ge in the metal and silicate, respectively) of siderophile elements were studied by performing series of high pressure, high temperature experiments. They are also dependent on oxygen fugacity, and metal and silicate composition. Ge is a moderately siderophile element found in both the mantle and core, and has yet to be studied systematically at high temperatures. Moreover, previous work has been limited by the low solubility of Ge in silicate melts (less than 100 ppm and close to detection limits for electron microprobe analysis). Reported here are results from 14 experiments studying the partitioning of Ge between silicate and metallic liquids. The Ge concentrations were then analyzed using Laser Ablation Inductively Coupled Mass Spectrometry (LA-ICP-MS) which is sensitive enough to detect ppm levels of Ge in the silicate melt.
King, C.↗
Germanium Enrichments in Sedimentary Rocks in Gale Crater, Mars: Constraining the Timing of Alteration and Character of the Protolith
Rocks enriched in Ge have been discovered in Gale Crater, Mars, by the Alpha-particle X-ray spectrometer (APXS) on the Mars Science Lab (MSL) rover, Curiosity. The Ge concentrations in Gale Crater (commonly >50 ppm) are remarkably high in comparison to Earth, where Ge ranges from 0.5-4.0 ppm in igneous rocks and 0.2-3.3 ppm in siliciclastic sediment. Primary meteoritic input is not likely the source of high Ge because Ge/Ni in chondrites (approx.0.003) and irons (<0.04) is lower than in Gale rocks (0.08-0.2). Earth studies show Ge is a useful geochemical tracer because it is coherent with Si during magmatic processes and Ge/Si varies less than 20% in basalts. Ge and Si fractionate during soil/regolith weathering, with Ge preferentially sequestered in clays. Ge is also concentrated in Cu- and Zn-rich hydrothermal sulfide deposits and Fe- and Mnrich oxide deposits. Other fluid-mobile elements (K, Zn, Cl, Br, S) are also enriched at Gale and further constrain aqueous alteration processes. Here, we interpret the sediment alteration history and present a possible model for Ge enrichments at Gale involving fluid alteration of the protolith.
Berger, J. A.↗
Germanium abundances in lunar basalts - Evidence of mantle metasomatism?
To fill in gaps in the present Ge database, mare basalts were analyzed for Ge and other elements by RNAA and INAA. Mare basalts from Apollo 11, 12, 15, and 17 landing sites are rather uniform in Ge abundance, but Apollo 14 aluminous mare basalts and KREEP are enriched in Ge by factors of up to 300 compared to typical mare basalts. These Ge enrichments are not associated with other siderophile element enrichments and thus are not due to differences in the amount of metal segregated during core formation. Based on crystal-chemical and interelement variations, it does not appear that the observed Ge enrichments are due to silicate liquid immiscibility. KREEP basalt source regions may have been metasomatized, and Apollo 14 aluminous mare basalt magmas may have become enriched in Ge by interacting with these metasomatized areas. The presence of volatile- and Ge-rich regions in the moon suggest that the moon was never totally molten.
Dickinson, T.↗
Bridgman Growth of Germanium and Germanium-Silicon Crystals under Microgravity
Four different Bridgman growth experiments on Ge:Ga and Ge(sub x)Si(sub 1-x) were performed under microgravity during the FOTON M4 flight in fall 2014 as joint German-Russian experiments. The experiments were also part of the RDGS/ICESAGE project(s) of ESA/NASA on detached growth of Ge and Ge-Si. Three experiments on Ge:Ga investigated different heat and mass transport regimes, i.e. mostly diffusive conditions, flows driven by a rotating magnetic field, and flows driven by vibration. The fourth experiment on Ge(sub 0.98)Si(0.02) investigated detached growth. All four experiments were successful and yielded crystals. Both the Ge-Si experiment and two of the Ge:Ga experiments showed stable detachment from the ampoule wall, although this was not planned for the latter two experiments. The influence of the rotating magnetic field as well as of the vibration was pronounced in the case of the microgram experiments, but dominated by buoyancy convection under 1g.
Croell, A.↗
The Contrast in Outgassing of Germanium Between Shergottites and Nakhlites
Final Paper and not the abstract is attached. Introduction: Germanium is generally thought to follow Si in its geochemical behavior, but little data has existed to rigorously understand the behavior of Ge in the Martian mantle. Germanium is known to be more siderophile than Si, and its partitioning into the martian core has been studied by. Typical abundances in igneous martian meteorites range from 0.5-3 ppm, a larger range than what is observed in terrestrial basalts (1.5 +/- 0.1 ppm). In situ measurements by the MER and MSL rovers have revealed a surprisingly large range in Ge abundances in surface rocks (30-650 ppm), but many igneous rocks and soils are shown to have greater than 30 ppm Ge (the detection limit of the APXS). Recently, reported that shergottite minerals showed a depletion of Ge with increasing fractionation, while nakhlites and chassignites exhibited Ge behavior compatible with closed system igneous differentiation. They interpreted their observations as tentatively indicating volcanic outgassing of Ge from shergottites (but not from nakhlite-chassignites) with recondensation of the Ge vapor into soils and breccias. Recent experimental studies show that Ge is significantly volatile from magmas. In this study, we followed up on those results by analyzing minerals in five nakhlites and five shergottites by laser ablation ICP-MS (LA-ICP-MS). See Attached
Yang, S.↗
A Two Gigayear History of Germanium Outgassing from Shergottites
Germanium (Ge) and Zn enrichment in martian sedimentary rocks has been reported from rocks at Gale Crater, showing concentrations of Ge from tens to hundreds ppm [1]. The Ge concentrations in martian meteorites are significantly lower (0.5-2.5 ppm) [2]. Our recent studies [3-4] have revealed that Ge is lost from shergottites due to volatility. Recent experimental studies confirm that Ge and Zn are both significantly volatile under magmatic conditions [5-7]. Further, Ge is moderately incompatible during magmatic differentiation [8] so Ge contents in olivines or pyroxenes increase during igneous fractionation in nakhlites and chassignites [4]. Shergottites for which Ge abundances had been determined included rocks with ages of 150-600 Ma, while the enrichments reported from Gale Crater rocks likely occurred over 3 Ga ago. The recent discovery of two unpaired ancient (2.4 Ga) depleted shergottites, NWA 7635 [9] and NWA 8159 [10], afforded the prospect of obtaining an extended history of martian volcanic outgassing. Both of the ancient shergottites are depleted in incompatible elements and share a similar GCR exposure age to younger depleted shergottites implying derivation from a single, long-lived (>2 Ga) volcanic center [9].
Yang, S.↗
Gallium and germanium in the metal and silicates of L- and LL-chondrites.
Concentrations of Ga and Ge in the metal of 31 L-, 8 LL- and 2 H-chondrites, and in the silicates of 12 L- and LL-chondrites have been determined by spectrophotometric methods. The ranges of Ga contents in the metal of L- and LL-chondrites are 1.1 to 36.9 ppm and 1.0 to 34.1 ppm, respectively. The Ge content in the metal is positively correlated with Ga and ranges from 89.1 to 160 ppm and from 126 to 308 ppm for L- and LL-chondrites, respectively. The Ga content in the silicates of L-chondrites varies from 4.0 to 8.9 ppm. The Ga and Ge contents in the metal are clearly lower in unequilibrated than in equilibrated L- and LL-group chondrites. Unequilibrated and equilibrated chondrites are well separated in the plots of Ga vs Ge in the metal, and the L- and LL-groups are also well resolved. The Ga and Ge in the metal are well correlated with petrologic grade. This suggests that Ga and Ge variations in the metal are related to thermal metamorphism. There is evidence of an enrichment of Ga in the metal due to shock reheating.
Chou, C.-L.↗
High-Quality, Thin-Film Germanium Single Crystals
Germanium (Ge) has crystallographic characteristics similar to GaAs and compatible with heteroepitaxial growth of GaAs. Further, since efficient heteroface cells already grown on thick Ge single crystals, Ge is excellent substrate candidate for thin-film cells. Required is single-crystal Ge thin film. Method developed for epitaxially growing highquality 10-um Ge thin films on ,100. NaCl substrates by plasma-enhanced chemical-vapor deposition (PECVD) and then separating Ge films by either melt-away or differential-thermal shear stress techniques. Free-standing films used for growth of AlxGa1-xAs/GaAs heteroface cells by similar techniques.
Outlaw, R. A.↗
High efficiency GaAs/Ge monolithic tandem solar cells
Two-terminal monolithic tandem cells consisting of a GaAs solar cell grown epitaxially on a Ge solar cell substrate are very attractive for space applications. Tandem cells of GaAs grown by metal-organic chemical vapor deposition on thin Ge were investigated to address both higher efficiency and reduced weight. Two materials growth issues associated with this heteroepitaxial system, autodoping of the GaAs layers by Ge and diffusion of Ga and As into the Ge substrate, were addressed. The latter appears to result in information of an unintentional p-n junction in the Ge. Early simulator measurements gave efficiencies as high as 21.7 percent for 4 cm2 GaAs/Ge cells, but recent high-altitude testing has given efficiencies of 18 percent. Sources of errors in simulator measurements of two-terminal tandem cells are discussed. A limiting efficiency of about 36 percent for the tandem cell at AMO was calculated. Ways to improve the performance of present cells, primarily by increasing the Isc and Voc of the Ge cell, are proposed.
Tobin, S. P.↗
Extrinsic germanium photoconductors for far-IR astronomy: Research results and works in progress
Some Ge:Ga and Ge:Sb photoconductor materials and detectors that are currently under development are reported. The best Ge:Ga devices exhibit dark currents of lower than 200 electrons/s, with a concurrent responsivity of 2 A/W and a detective quantum efficiency (DQE) of 5 percent. For higher backgrounds, an operating temperature of 3 K can be used. This increases the DQE to 7 percent and the responsivity to 4.5 A/W. Investigations were initiated into n-type Ge:Sb as an alternative photoconductive material. Two crystals of Ge:Sb were grown and a number of test detectors were fabricated and evaluated. At 2 K, the best device produced dark currents of less than 100 electrons/s with concurrent responsivity of 1 A/W and DQE of 4 percent, and at 3 K, produced currents of 10(exp 5) electrons/s with a DQE of 7 percent and a responsivity of 4 A/W. Using p-type Ge:Ga crystals, two dimensional monolithic photoconductor arrays are being constructed. Future work will focus on measuring pixel-to-pixel homogeneity, cross talk issues, overall sensitivity and suitability for photometric instruments.
Beeman, J. W.↗
Probing the galactic disk and halo. 2: Hot interstellar gas toward the inner galaxy star HD 156359
We present Goddard High Resolution Spectrograph intermediate-resolution measurements of the 1233-1256 A spectral region of HD 156396, a halo star at l = 328.7 deg, b = -14.5 deg in the inner Galaxy with a line-of sight distance of 11.1 kpc and a z-distance of -2.8 kpc. The data have a resolution of 18 km/s Full Width at Half Maximum (FWHM) and a signal-to-noise ratio of approximately 50:1. We detect interstellar lines of Mg II, S II, S II, Ge II, and N V and determine log N/(Mg II) = 15.78 +0.25, -0.27, log N(Si II) greater than 13.70, log N(S II) greater than 15.76, log N(Ge II) = 12.20 +0.09,-0.11, and log N(N v) = 14.06 +/- 0.02. Assuming solar reference abundances, the diffuse clouds containing Mg, S, and Ge along the sight line have average logarithmic depletions D(Mg) = -0.6 +/- 0.3 dex, D(S) greater than -0.2 dex, and D(Ge) = -0.2 +/- 0.2 dex. The Mg and Ge depletions are approximately 2 times smaller than is typical of diffuse clouds in the solar vicinity. Galactic rotational modeling of the N v profiles indicates that the highly ionized gas traced by this ion has a scale height of approximately 1 kpc if gas at large z-distances corotates with the underlying disk gas. Rotational modeling of the Si iv and C iv profiles measured by the IUE satellite yields similar scale height estimates. The scale height results contrast with previous studies of highly ionized gas in the outer Milky Way that reveal a more extended gas distribtion with h approximately equals 3-4 kpc. We detect a high-velocity feature in N v and Si II v(sub LSR) approximately equals + 125 km/s) that is probably created in an interface between warm and hot gas.
Sembach, Kenneth R.↗
Contact Angles and Surface Tension of Germanium-Silicon Melts
Precise knowledge of material parameters is more and more important for improving crystal growth processes. Two important parameters are the contact (wetting) angle and the surface tension, determining meniscus shapes and surface-tension driven flows in a variety of methods (Czochralski, EFG, floating-zone, detached Bridgman growth). The sessile drop technique allows the measurement of both parameters simultaneously and has been used to measure the contact angles and the surface tension of Ge(1-x)Si(x) (0 less than or equal to x less than or equal to 1.3) alloys on various substrate materials. Fused quartz, Sapphire, glassy carbon, graphite, SiC, carbon-based aerogel, pyrolytic boron nitride (pBN), AIN, Si3N4, and polycrystalline CVD diamond were used as substrate materials. In addition, the effect of different cleaning procedures and surface treatments on the wetting behavior were investigated. Measurements were performed both under dynamic vacuum and gas atmospheres (argon or forming gas), with temperatures up to 1100 C. In some experiments, the sample was processed for longer times, up to a week, to investigate any changes of the contact angle and/or surface tension due to slow reactions with the substrate. For pure Ge, stable contact angles were found for carbon-based substrates and for pBN, for Ge(1-x)Si(x) only for pBN. The highest wetting angles were found for pBN substrates with angles around 170deg. For the surface tension of Ge, the most reliable values resulted in gamma(T) = (591- 0.077 (T-T(sub m)) 10(exp -3)N/m. The temperature dependence of the surface tension showed similar values for Ge(1-x)Si(x), around -0.08 x 10(exp -3)N/m K, and a compositional dependence of 2.2 x 10(exp -3)N/m at%Si.
Croell, A.↗
High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics
III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge/GeSi/Si substrate show nearly identical I-V characteristics in both forward and reverse bias regions. External quantum efficiencies of AlGaAs/GaAs cell structures grown on Ge/GeSi/Si and Ge substrates demonstrated nearly identical photoresponse, which indicates that high lifetimes, diffusion lengths and efficient minority carrier collection is maintained after complete cell processing.
Carlin, J. A.↗
The Combined Strength of Thermodynamics and Comparative Planetology: Application of Activity Models to Core Formation in Terrestrial Bodies
Recent models for accretion of terrestrial bodies involve metal-silicate equilibrium as the metallic core formed during growth. Most elements considered are either refractory or well studied elements for which effects of pressure, temperature, oxygen fugacity, and metallic liquid composition are well known. There are a large number of elements that are both siderophile and volatile, whose fate in such models is unknown, largely due to a lack of data at comparable conditions and com-positions (FeNi core with light elements such as S, C, Si, and O). We have focused on Ge, In, As, Sb and determined the effect of Si and C on metal-silicate partitioning, and developed a thermo-dynamic model that allows application of these new data to a wide range of planetary bodies. New experiments: We have previously carried out experiments with FeSi metallic liquid at C-saturated conditions at 1600 and 1800 C [4]. In a new series of experiments we investigate the effect of Si in carbon-free systems at 1600 C for comparison. Experiments were carried out at 1 GPa in MgO capsules using the same basaltic starting composition as in previous studies. The MgO capsule reacts with the silicate melt to form more MgO-rich liquids that have 22-26 wt% MgO. Experimental met-als and silicates were analyzed using a combination of electron microprobe analysis and laser ablation ICP-MS. Results: The new results can be interpreted by considering Ge as an example, in the simple exchange equilibrium Fe + GeO = FeO + Ge, where the equilibrium constant Kd can be examined as a function of Si content of the metal. The slope of lnKd vs. (1-XSi) for this new series allows derivation of the epsilon interaction parameter for each of these four elements and Si (both C-saturated and C-free).All four elements have positive epsilon values, indicating that Si causes a decrease in the partition coefficients; values are 6.6, 6.5, 27.8 and 25.2 for In, Ge, As, and Sb, respectively, at 1 GPa and 1600 C. As an example of how large the effect of Si can be, these epsilon values correspond to activity coefficients (gamma) for As of 0.01 when XSi = 0, and up to gamma = 23 when XSi = 0.2. Combining these new results with previous determinations [5,6] of epsilon parameters for S and C for these elements allows us calculate activity of Ge, In, As, and Sb in Fe-Ni-Si-S-C-O metallic liquids. We apply this new model to sever-al terrestrial bodies such as Earth (Si-rich core), Mars (S-rich core), Moon (S-, C-, and Si-poor core), and Vesta, and examine the resulting core and mantle concentrations of these elements. Mantle concentrations of these four elements are well explained for Earth and Mars in models that call for mid-mantle equilibration between Si-bearing and S-bearing FeNi cores, respectively. Modeling results for the Moon and Vesta will also be presented.
Righter, K.↗
Turbofan Engine Power Extraction Demonstration Final Report
As GE Aerospace advances toward a revolutionary step change in propulsion efficiency, the integration and demonstration of new engine architectures and technology systems are essential. The NASA Turbofan Engine Power Extraction Demonstration (PEx), conducted through the Hybrid Thermally Efficient Core (HyTEC) project, aims to develop and demonstrate megawatt-class hybrid electric capability on a modern commercial turbofan engine. The hybrid electric system is critical to meeting the needs of the U.S. aviation industry for next-generational propulsion systems with greater efficiency, durability, and range. This supports energy independence and helps ensure the security and resilience of one of America's largest export industries. The PEx project specifically targets three key objectives: mechanically integrating hybrid electric capability into a commercial turbofan engine, integrating electric machine control with turbofan control for advanced power management, and de-risking performance modeling of future hybrid electric architectures. To mature these technologies to Technology Readiness Level (TRL) 6, a series of electric power system component tests and a baseline engine performance test campaign were conducted. These efforts culminated in an integrated hybrid electric turbofan test campaign demonstrating power extraction, power insertion, and power transfer between spools. Tests of the electric power system were completed at GE Aerospace’s Electrical Power Integrated Systems Center in Dayton, Ohio and engine tests were completed at Peebles Test Operation in Peebles, Ohio. Hybrid electric trade studies extended the demonstrated capability to altitude using the validated cycle model from the PEx test campaigns, allowing for comments on expanded mission benefits not demonstrated in the ground campaign. The knowledge gained from PEx also supports GE Aerospace’s Compact Core Demonstrator as part of HyTEC Phase 2 and ultimately informs the implementation of hybrid electric systems in the next generation of GE Aerospace commercial engine products. This report provides a summary of the program background, test campaigns, trade studies, and insights into the technical maturation required to support future commercial products.
Hybrid Electric↗