Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Film microstructures”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 235 records · Page 13
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Influence of the microstructure on the resulting 18R martensitic transformation of polycrystalline Cu−Al−Zn thin films obtained by sputtering and reactive annealing

We report the influence of the microstructure on the martensitic transformation in polycrystalline Cu−Zn−Al thin films with 18R structure. The films are grown in two steps. First, Cu−Al thin films are obtained by DC sputtering. Second, the Zn is introduced in the Cu−Al thin films by the annealing them together with a bulk Cu−Zn−Al reference. The crystalline structure of the films was analyzed by X-ray diffraction and transmission electron microscopy. The martensitic transformation temperature was measured by electrical transport using conventional four probe geometry. It was observed that temperatures above 973 K are necessary for zincification of the samples to occur. The resulting martensitic transformation and its hysteresis (barrier for the transformation) depend on the grain size, topology and films thickness. - Highlights: • Polycrystalline Cu−Al−Zn thin films with nanometric grain size are sintered. • Influence of thermal annealing process on the microstructure is analyzed. • Martensitic transformation of Cu−Al−Zn thin films is strongly affected by the microstructure.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Investigation of the role of deposition rate on optical, microstructure and ethanol sensing characteristics of nanostructured Sn doped In2O3 films

Highlights: • Deposition rate can play an important role in gas sensing of In{sub 2}O{sub 3}:Sn films. • The crystallite size and linear defects of the films is estimated by eCMWP method. • The correlation between the optical, microstructure and gas sensing properties is studied. • The size distribution behavior of samples is in agreement with the results of porosity. • Optimum deposition rate for In{sub 2}O{sub 3}:Sn films is 0.2 nm/s. - Abstract: In this paper, Sn doped In{sub 2}O{sub 3} (In{sub 2}O{sub 3}:Sn) nanostructured films as metal oxide semiconductor material which is very important in optoelectronics and gas sensing industries, were prepared by thermal evaporation technique. It is discussed how different deposition rate (0.1, 0.2, 0.3 and 0.4 nm/s) affects the optical, electrical, microstructural and ethanol gas sensing characteristics of In{sub 2}O{sub 3}:Sn films and must be precisely monitored. The gas sensing performance of the films was evaluated in terms of gas concentration and operating temperature. A correlation between the crystallite size, porosity, dislocation density, outer cut-off radius of dislocation, optical band gap, activation energy and sensitivity of the films was established. The results demonstrate that the maximum sensitivity to ethanol vapors can be obtained for the sample grown at deposition rate of 0.2 nm/s. The response and recovery times of this sensor exposed to 100 ppm of ethanol vapors were determined and found to be 9.0 s and 3.9 s, respectively.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Layer-by-Layer-Processed Organic Solar Cells with 18.02% Efficiency Enabled by Regulating the Aggregation of Bottom Polymers

The fabrication of organic solar cells (OSCs) by a layer-by-layer (LBL) method has attracted growing attention in recent years. As already known, the pre-aggregates of conjugated polymers in solution have a profound impact on their microstructure morphology in films. Herein, by simply controlling the solution temperature and annealing processes, the pre-aggregation behavior of D18 polymer in solution can be fine-tuned and the microstructure of D18 bottom layer is well manipulated. The optimized D18 bottom layer can effectively regulate L8-BO upper-layer-forming suitable networks for efficient charge transportation. In addition, a vertical phase separation with a special D/D:A/A structure (P-i-N-type component distribution) is also formed. As a result, compared to the 16.43% power conversion efficiency (PCE) of the bulk heterojunction devices, such control enables bilayer OSC devices based on the polymer D18 and L8-BO to deliver an enhanced PCE of 18.02% with simultaneously improved short-circuit current density, open-circuit voltage, and fill factor. Importantly, it is also demonstrated in these results that the LBL deposition process utilizing the pre-aggregation of polymer and its fiber-network-forming ability is a very promising approach to improve charge dynamics, suppress carrier recombination, and fabricate highly efficient OSCs.

14 SOLAR ENERGY↗
DOE OSTI2018

Effect of RF Power on Structural, Magnetic, and Optical Properties of CoFe{sub 2}O{sub 4} Thin Films

The thin films of CoFe{sub 2}O{sub 4} were deposited on glass substrates by radio-frequency (RF) sputtering. The effect of RF power variation from 60–120 W on the structure, magnetic, and optical properties of the as-deposited films and films annealed at 500 °C was studied. The magnetic parameters of the film, i.e., in-plane coercivity (H{sub c}), saturation magnetization (M{sub s}), and remanence (M{sub r}) increase as RF power is increased from 60 to 80 W followed by a decreasing trend with further increase in RF power to 120 W. Annealing of the film significantly improves the magnetic properties. The largest grain size and the best crystallinity of the film are obtained for the film deposited at 80 W of RF power. The thin films exhibited 70–80% optical transmittance. Optical band gap (E{sub g}) depends on the RF power and grain size, and it varies between 2.08 and 2.16 eV for the as-deposited films and between 2.16 and 2.30 eV for the annealed films. The study shows that RF power used for depositing the film has strong effect on the microstructure and properties of the film.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS2002

The Effects of Proton Radiation on the Structure of Diamond Films

Diamond possesses many of the sought after material properties desired in present day applications and is also quite radiation resistant. These characteristics make it an ideal candidate for insertion into MicroElectroMechanical Systems (MEMS) technologies, particularly for space-based applications. Most prior radiation studies investigated single crystal, bulk diamond specimens, not polycrystalline thin films. This investigation examined the microstructural effects of irradiating polycrystalline diamond films with various proton dosages (10(exp 15) - 10(exp 17) H+/sq cm). Scanning Electron Microscopy, micro-Raman Spectroscopy, and micro-X-ray Diffraction techniques were used to examine the effects as a function of depth. Strain values were calculated. Results indicate that the diamond lattice is retained, even at maximum irradiation levels. Polycrystalline silicon was also examined for comparative purposes.

Newton, Robert Lee↗
DOE OSTI2015

Thickness and microstructure effects in the optical and electrical properties of silver thin films

The optical and electrical response of metal thin films approaching thicknesses in the range of the electron mean free path is highly affected by electronic scattering with the interfaces and defects. Here, we present a theoretical and experimental study on how thickness and microstructure affect the properties of Ag thin films. We are able to successfully model the electrical resistivity and IR optical response using a thickness dependent electronic scattering time. Remarkably, the product of electronic scattering time and resistivity remains constant regardless of the thickness (τx ρ = C), with a value of 59 ± 2 μΩ cm ⋅ fs for Ag films in the investigated range from 3 to 74 nm. Our findings enable us to develop a theoretically framework that allows calculating the optical response of metal thin films in the IR by using their measured thickness and resistivity. An excellent agreement is found between experimental measurements and predicted values. This study also shows the theoretical lower limit for emissivity in Ag thin films according to their microstructure and thickness. Application of the model presented here will allow rapid characterization of the IR optical response of metal thin films, with important application in a broad spectrum of fundamental and industrial applications, including optical coatings, low-emissivity windows and semiconductor industry.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Mechanical performance of co-deposited immiscible Cu–Ta thin films

Abstract The immiscible alloy Cu–Ta has the potential for enhanced mechanical performance in applications as a functional coating. To establish baseline mechanical properties, four Cu–Ta films were co-sputtered at the temperatures 23, 400, 600, and 800 °C and tested with nanoindentation at strain rates 5 $$\times $$ × 10 −3 s −1 to 10 s −1 . Each film had a unique microstructure morphology. The hardness and elastic modulus of the four films were insensitive to strain rate changes. Instead, the measured properties were spatially dependent, particularly in the 600 and 800 °C films. In those two films, there is a bimodal deformation behavior due to Cu-agglomeration under protruding grains and planar Ta-rich regions. Increasing the indentation depth revealed shear band suppression which is related to a homogenous distribution of flow stresses for all four microstructure morphologies. Finally, the Cu–Ta hardness appeared to follow a rule-of-mixtures when compared to extrapolated data of Cu and Ta monolithic films.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Interface-sensitive microwave loss in superconducting tantalum films sputtered on c-plane sapphire

Quantum coherence in superconducting circuits has increased steadily over the last decades because of a growing understanding of the various loss mechanisms. Recently, tantalum (Ta) emerged as a promising material to address microscopic sources of loss found on niobium (Nb) or aluminum (Al) surfaces. However, the effects of film and interface microstructure on low-temperature microwave loss are still not well understood. Here, in this study, we present a systematic study of the structural and electrical properties of Ta and Nb films sputtered on c-plane sapphire at varying growth temperatures. As growth temperature was increased, our results show that the onset of epitaxial growth of α -phase Ta correlates with lower Ta surface roughness, higher critical temperature, and higher residual resistivity ratio, but surprisingly also correlates with a significant increase in loss at microwave frequency. Notably, this high level of loss is not observed in Nb films prepared in the same way and having very similar structure. By experimentally controlling the surface on which the Ta film is nucleated, we determine that the source of loss was only present in samples having an epitaxial Ta/sapphire interface and show that it was apparently mitigated by either growing a thin, epitaxial Nb interlayer between the Ta film and the substrate or by intentionally treating, and effectively damaging, the sapphire surface with an in situ argon plasma before Ta growth. In addition to elucidating this interfacial microwave loss, this work provides adequate process details to aid reproducible growth of low-loss Ta films across fabrication facilities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Influence of inserted Mo layer on the thermal stability of perpendicularly magnetized Ta/Mo/Co{sub 20}Fe{sub 60}B{sub 20}/MgO/Ta films

We studied the thermal stability of perpendicular magnetic anisotropy (PMA) in Ta/Mo/CoFeB/MgO/Ta films with and without inserted Mo layers. In the absence of a Mo layer, the films show PMA at annealing temperatures below 300 °C. On the other hand, the insertion of a Mo layer preserves PMA at annealing temperatures of up to 500 °C; however, a higher annealing temperature leads to the collapse of PMA. X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) were used to study the microstructure of the films to understand the deterioration of PMA. The XPS results show that the segregation of Ta is partly suppressed by inserting a Mo layer. Once inserted, Mo does not remain at the interface of Ta and CoFeB but migrates to the surface of the films. The HRTEM results show that the crystallization of the MgO (001) texture is improved owing to the higher annealing temperature of the Mo inserted sample. A smooth and clear CoFeB/MgO interface is evident. The inserted Mo layer not only helps to obtain sharper and smoother interfaces but also contributes to the crystallization after the higher annealing temperature of films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Resonant x-ray reflectivity study of partial decomposed boron nitride thin films using Indus-1 synchrotron

We determined the microstructural parameters and chemical composition profile of partial decomposed boron nitride thin films using x-ray reflectivity near the respective absorption edges. The elemental specificity and optical contrast variation properties of the resonant effect are utilized to combine chemical analysis with physical microstructure of thin films from x-ray scattered intensities. We demonstrated these aspects through calculations and experiments in the soft x-ray region near the boron K-absorption edge.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Effect of sputtered titanium interlayers on the properties of nanocrystalline diamond films

Ti interlayers with different thicknesses were sputtered on Si substrates and then ultrasonically seeded in a diamond powder suspension. Nanocrystalline diamond (NCD) films were deposited using a dc arc plasma jet chemical vapor deposition system on the seeded Ti/Si substrates. Atomic force microscopy and scanning electron microscopy tests showed that the roughness of the prepared Ti interlayer increased with increasing thickness. The effects of Ti interlayers with various thicknesses on the properties of NCD films were investigated. The results show nucleation, growth, and microstructure of the NCD films are strongly influenced by the Ti interlayers. The addition of a Ti interlayer between the Si substrate and the NCD films can significantly enhance the nucleation rate and reduce the surface roughness of the NCD. The NCD film on a 120 nm Ti interlayer possesses the fastest nucleation rate and the smoothest surface. Raman spectra of the NCD films show trans-polyacetylene relevant peaks reduce with increasing Ti interlayer thickness, which can owe to the improvement of crystalline at grain boundaries. Furthermore, nanoindentation measurement results show that the NCD film on a 120 nm Ti interlayer displays a higher hardness and elastic modulus. High resolution transmission electron microscopy images of a cross-section show that C atoms diffuse into the Ti layer and Si substrate and form TiC and SiC hard phases, which can explain the enhancement of mechanical properties of NCD.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Impact of Water Ingress on Molybdenum Thin Films and Its Effect on Cu(In,Ga)Se 2 Solar Cells

Solar cell degradation can occur through many pathways and at the different stages of the fabrication process, notably because of the water condensation. In the case of Cu(In,Ga)Se 2 (CIGS) solar cells, the impact of water ingress on Mo back contact can be substantial for not only the film itself but also the device performance and reliability. Microstructural modification, change in film morphology, loss in reflectance, and increased resistivity because of the moisture ingress were observed via X-ray diffraction, transmission electron microscopy, spectroscopic ellipsometry, and four-point probe measurements, respectively. Secondary ion mass spectrometry measurements revealed drastic changes in the alkali (Na, K) profiles in both the CIGS and Mo layers, likely because of the modification of their diffusion coefficient through Mo. This, in turn, negatively impacts the solar cell efficiency by decreasing both fill factor and open-circuit voltage. Additional experiments, modifying the substrate and utilizing a NaF postdeposition treatment, highlight the mechanisms of degradation as being due to both a modification of the Mo/CIGS interface and the lack of alkali diffusion after water ingress.

14 SOLAR ENERGY↗
DOE OSTI2015

Nanocarbon-copper thin film as transparent electrode

Researchers seeking to enhance the properties of metals have long pursued incorporating carbon in the metallic host lattice in order to combine the strongly bonded electrons in the metal lattice that yield high ampacity and the free electrons available in carbon nanostructures that give rise to high conductivity. The incorporation of carbon nanostructures into the copper lattice has the potential to improve the current density of copper to meet the ever-increasing demands of nanoelectronic devices. We report on the structure and properties of carbon incorporated in concentrations up to 5 wt. % (∼22 at. %) into the crystal structure of copper. Carbon nanoparticles of 5 nm–200 nm in diameter in an interconnecting carbon matrix are formed within the bulk Cu samples. The carbon does not phase separate after subsequent melting and re-solidification despite the absence of a predicted solid solution at such concentrations in the C-Cu binary phase diagram. This material, so-called, Cu covetic, makes deposition of Cu films containing carbon with similar microstructure to the metal possible. Copper covetic films exhibit greater transparency, higher conductivity, and resistance to oxidation than pure copper films of the same thickness, making them a suitable choice for transparent conductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Prepared σ-MnO{sub 2} thin films by chemical bath deposition methods and study of its optical and microstructure properties

In this work, σ-MnO{sub 2} thin films deposited by chemical bath deposition method at three concentration of solution. The influence of concentration on thickness, micromorphology and optical parameters were investigated by XRD, SEM, UV–Vis spectrophotometer, atomic force microscopic and multifractal analyses. The optical band gap of thin films is decreased with increase in concentration. The optical parameters: refractive index and real part of dielectric constant are increased with increase in concentration, but decrease in extinction coefficient and imaginary parts of dielectric constant are observed. The micromorphology and roughness of layers surface are changed as function of concentration. The studied samples have multifractal properties and can be included in computer algorithms useful for graphical representation of 3-D microtexture surfaces of σ-MnO{sub 2} thin films.

36 MATERIALS SCIENCE↗